Liquid Crystal Display Device

ABSTRACT

A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.13/307,131, filed Nov. 30, 2011, now Allowed, which is a continuation ofU.S. application Ser. No. 12/977,556, filed Dec. 23, 2010, now Allowed,which is a divisional of U.S. application Ser. No. 11/845,415, filedAug. 27, 2007, now U.S. Pat. No. 7,859,510, which claims the benefit ofa foreign priority application filed in Japan as Serial No. 2006-236392on Aug. 31, 2006, all of which are incorporated by reference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a liquid crystal display device. Inparticular, the present invention relates to a liquid crystal displaydevice having a shift register formed by using a transistor. Inaddition, the present invention relates to a method for driving theliquid crystal display device. Further, the present invention relates toan electronic device having the liquid crystal display device in adisplay portion.

2. Description of the Related Art

In recent years, with the increase of large display devices such asliquid crystal televisions, liquid crystal display devices have beenactively developed. In particular, a technique for forming a pixelcircuit and a driver circuit including a shift register or the like(hereinafter also referred to as an internal circuit) over the sameinsulating substrate by using transistors formed of a non-crystallinesemiconductor (hereinafter also referred to as amorphous silicon) hasbeen actively developed, because the technique greatly contributes tolow power consumption and low cost. The internal circuit formed over theinsulating substrate is connected to a controller IC or the like(hereinafter also referred to as an external circuit) through an FPC orthe like, and its operation is controlled.

A shift register which is formed by using transistors formed of anon-crystalline semiconductor has been devised among the above-describedinternal circuits (for example, see Reference 1: Japanese Translation ofPCT International Application No. H10-500243). Since in a shift registerdisclosed in Reference 1, a period in which an output terminal is in afloating state is long, there has been a problem in that noise easilyoccurs in an output signal of the shift register. In order to solve theproblem of the shift register disclosed in Reference 1, a structure of ashift register in which an output terminal does not get into a floatingstate has been devised (for example, see Reference 2: 2.0 inch a-Si:HTFT-LCD with Low Noise Integrated Gate Driver SID '05 DIGEST pp. 942 to945).

SUMMARY OF THE INVENTION

In Reference 2, a transistor connected between an output terminal and anegative voltage source is turned on in a non-selection period.Therefore, the output terminal of the shift register disclosed inReference 2 does not get into a floating state, so that noise of anoutput signal in the shift register disclosed in Reference 2 can bereduced.

However, it is known that characteristics of a transistor formed of anon-crystalline semiconductor deteriorate in accordance with the amountof time for which the transistor is turned on, voltage applied, or thelike. Among causes of deterioration, a threshold voltage shift where thethreshold voltage is shifted (raised) is one of the major causes of amalfunction of a shift register. Therefore, since the transistorconnected between the output terminal and the negative voltage source isturned on in the non-selection period in the shift register disclosed inReference 2, the shift register malfunctions because of deterioration incharacteristics of the transistor.

In view of the aforementioned problems, it is an object of the presentinvention to provide a liquid crystal display device including a shiftregister where noise of an output signal is reduced in a non-selectionperiod and deterioration in characteristics of a transistor can besuppressed, and an electronic device having the liquid crystal displaydevice.

A liquid crystal display device of the present invention includes apixel portion formed over an insulating substrate and a shift registerformed over the insulating substrate. In addition, the shift registerincludes a plurality of flip-flops, and each of the plurality offlip-flops includes a transistor which is turned on at regular intervalsin a non-selection period and outputs a power supply potential to anoutput terminal (a scan line). The transistor is turned on at regularintervals and outputs the power supply potential to the scan line, sothat each of the plurality of flip-flops suppresses fluctuation in apotential of the scan line and deterioration in characteristics of thetransistor.

A liquid crystal display device of the present invention includes firstand second pixels each having a liquid crystal element, a drivercircuit, a first wiring, a second wiring, a third wiring, a fourthwiring, a fifth wiring, and a sixth wiring. The first pixel iselectrically connected to the driver circuit through the fifth wiringand the second pixel is electrically connected to the driver circuitthrough the sixth wiring. The driver circuit includes a shift register.The shift register includes a plurality of flip-flops. At least one ofthe plurality of flip-flops includes a first transistor, a secondtransistor, a third transistor, and a fourth transistor. A firstterminal of the first transistor is electrically connected to the firstwiring; a second terminal of the first transistor is electricallyconnected to a gate terminal of the second transistor; and a gateterminal of the first transistor is electrically connected to the fifthwiring. A first terminal of the second transistor is electricallyconnected to the third wiring and a second terminal of the secondtransistor is electrically connected to the sixth wiring. A firstterminal of the third transistor is electrically connected to the gateterminal of the second transistor; a second terminal of the thirdtransistor is electrically connected to the second wiring; and a gateterminal of the third transistor is electrically connected to the fourthwiring. A first terminal of the fourth transistor is electricallyconnected to the sixth wiring; a second terminal of the fourthtransistor is electrically connected to the second wiring; and a gateterminal of the fourth transistor is electrically connected to thefourth wiring.

A liquid crystal display device of the present invention includes firstand second pixels each having a liquid crystal element, a drivercircuit, a first wiring, a second wiring, a third wiring, a fourthwiring, and a fifth wiring. The first pixel is electrically connected tothe driver circuit through the fifth wiring and the second pixel iselectrically connected to the driver circuit through the first wiring.The driver circuit includes a shift register. The shift registerincludes a plurality of flip-flops. At least one of the plurality offlip-flops includes a first transistor, a second transistor, a thirdtransistor, and a fourth transistor. A first terminal of the firsttransistor is electrically connected to the fifth wiring; a secondterminal of the first transistor is electrically connected to a gateterminal of the second transistor; and a gate terminal of the firsttransistor is electrically connected to the fifth wiring. A firstterminal of the second transistor is electrically connected to the thirdwiring and a second terminal of the second transistor is electricallyconnected to the first wiring. A first terminal of the third transistoris electrically connected to the gate terminal of the second transistor;a second terminal of the third transistor is electrically connected tothe second wiring; and a gate terminal of the third transistor iselectrically connected to the fourth wiring. A first terminal of thefourth transistor is electrically connected to the first wiring; asecond terminal of the fourth transistor is electrically connected tothe second wiring; and a gate terminal of the fourth transistor iselectrically connected to the fourth wiring.

Note that in the present invention, each of the first transistor, thesecond transistor, the third transistor, and the fourth transistor maybe an N-channel transistor.

In addition, in the present invention, each of the first transistor, thesecond transistor, the third transistor, and the fourth transistor mayhave a semiconductor layer and the semiconductor layer may be amorphoussilicon.

In addition, in the present invention, a capacitor may be providedbetween the second terminal and the gate terminal of the firsttransistor.

A liquid crystal display device of the present invention includes firstand second pixels each having a liquid crystal element, a drivercircuit, a first wiring, a second wiring, a third wiring, a fourthwiring, a fifth wiring, a sixth wiring, and a seventh wiring. The firstpixel is electrically connected to the driver circuit through the fifthwiring and the second pixel is electrically connected to the drivercircuit through the sixth wiring. The driver circuit includes a shiftregister. The shift register includes a plurality of flip-flops. Atleast one of the plurality of flip-flops includes a first transistor, asecond transistor, a third transistor, a fourth transistor, and a fifthtransistor. A first terminal of the first transistor is electricallyconnected to the first wiring; a second terminal of the first transistoris electrically connected to a gate terminal of the second transistor;and a gate terminal of the first transistor is electrically connected tothe fifth wiring. A first terminal of the second transistor iselectrically connected to the third wiring and a second terminal of thesecond transistor is electrically connected to the sixth wiring. A firstterminal of the third transistor is electrically connected to the gateterminal of the second transistor; a second terminal of the thirdtransistor is electrically connected to the second wiring; and a gateterminal of the third transistor is electrically connected to the fourthwiring. A first terminal of the fourth transistor is electricallyconnected to the sixth wiring; a second terminal of the fourthtransistor is electrically connected to the second wiring; and a gateterminal of the fourth transistor is electrically connected to thefourth wiring. A first terminal of the fifth transistor is electricallyconnected to the sixth wiring; a second terminal of the fifth transistoris electrically connected to the second wiring; and a gate terminal ofthe fifth transistor is electrically connected to the seventh wiring.

A liquid crystal display device of the present invention includes firstand second pixels each having a liquid crystal element, a drivercircuit, a first wiring, a second wiring, a third wiring, a fourthwiring, a fifth wiring, and a sixth wiring. The first pixel iselectrically connected to the driver circuit through the fifth wiringand the second pixel is electrically connected to the driver circuitthrough the first wiring. The driver circuit includes a shift register.The shift register includes a plurality of flip-flops. At least one ofthe plurality of flip-flops includes a first transistor, a secondtransistor, a third transistor, a fourth transistor, and a fifthtransistor. A first terminal of the first transistor is electricallyconnected to the fifth wiring; a second terminal of the first transistoris electrically connected to a gate terminal of the second transistor;and a gate terminal of the first transistor is electrically connected tothe fifth wiring. A first terminal of the second transistor iselectrically connected to the third wiring and a second terminal of thesecond transistor is electrically connected to the sixth wiring. A firstterminal of the third transistor is electrically connected to the secondwiring; a second terminal of the third transistor is electricallyconnected to the gate terminal of the second transistor; and a gateterminal of the third transistor is electrically connected to the fourthwiring. A first terminal of the fourth transistor is electricallyconnected to the sixth wiring; a second terminal of the fourthtransistor is electrically connected to the second wiring; and a gateterminal of the fourth transistor is electrically connected to thefourth wiring. A first terminal of the fifth transistor is electricallyconnected to the sixth wiring; a second terminal of the fifth transistoris electrically connected to the second wiring; and a gate terminal ofthe fifth transistor is electrically connected to the first wiring.

Note that in the present invention, each of the first transistor, thesecond transistor, the third transistor, the fourth transistor, and thefifth transistor may be an N-channel transistor.

In addition, in the present invention, each of the first transistor, thesecond transistor, the third transistor, the fourth transistor, and thefifth transistor may have a semiconductor layer and the semiconductorlayer may be amorphous silicon.

In addition, in the present invention, a capacitor may be providedbetween the second terminal and the gate terminal of the firsttransistor.

A liquid crystal display device of the present invention includes firstto fourth pixels each having a liquid crystal element, a first drivercircuit, a second driver circuit, a first wiring, a second wiring, athird wiring, a fourth wiring, a fifth wiring, a sixth wiring, a seventhwiring, an eighth wiring, a ninth wiring, a tenth wiring, an eleventhwiring, and a twelfth wiring. The first pixel is electrically connectedto the first driver circuit through the fifth wiring; the second pixelis electrically connected to the first driver circuit through the sixthwiring; the third pixel is electrically connected to the second drivercircuit through the eleventh wiring; and the fourth pixel iselectrically connected to the second driver circuit through the twelfthwiring. The first driver circuit includes a first shift register and thesecond driver circuit includes a second shift register. The first shiftregister includes a plurality of flip-flops. At least one of theplurality of flip-flops includes a first transistor, a secondtransistor, a third transistor, and a fourth transistor. A firstterminal of the first transistor is electrically connected to the firstwiring; a second terminal of the first transistor is electricallyconnected to a gate terminal of the second transistor; and a gateterminal of the first transistor is electrically connected to the fifthwiring. A first terminal of the second transistor is electricallyconnected to the third wiring and a second terminal of the secondtransistor is electrically connected to the sixth wiring. A firstterminal of the third transistor is electrically connected to the secondwiring; a second terminal of the third transistor is electricallyconnected to the gate terminal of the second transistor; and a gateterminal of the third transistor is electrically connected to the fourthwiring. A first terminal of the fourth transistor is electricallyconnected to the second wiring; a second terminal of the fourthtransistor is electrically connected to the sixth wiring; and a gateterminal of the fourth transistor is electrically connected to thefourth wiring. The second shift register includes a plurality offlip-flops. At least one of the plurality of flip-flops includes a fifthtransistor, a sixth transistor, a seventh transistor, and an eighthtransistor. A first terminal of the fifth transistor is electricallyconnected to the seventh wiring; a second terminal of the fifthtransistor is electrically connected to a gate terminal of the sixthtransistor; and a gate terminal of the fifth transistor is electricallyconnected to the eleventh wiring. A first terminal of the sixthtransistor is electrically connected to the ninth wiring and a secondterminal of the sixth transistor is electrically connected to thetwelfth wiring. A first terminal of the seventh transistor iselectrically connected to the eighth wiring; a second terminal of theseventh transistor is electrically connected to the gate terminal of thesixth transistor; and a gate terminal of the seventh transistor iselectrically connected to the tenth wiring. A first terminal of theeighth transistor is electrically connected to the eighth wiring; asecond terminal of the eighth transistor is electrically connected tothe twelfth wiring; and a gate terminal of the eighth transistor iselectrically connected to the tenth wiring.

Note that in the present invention, the fifth wiring and the eleventhwiring may be electrically connected and the sixth wiring and thetwelfth wiring may be electrically connected.

Note that in the present invention, the fifth wiring and the eleventhwiring may be the same wiring and the sixth wiring and the twelfthwiring may be the same wiring.

Note that in the present invention, the first wiring and the seventhwiring may be electrically connected; the second wiring and the eighthwiring may be electrically connected; the third wiring and the ninthwiring may be electrically connected; and the fourth wiring and thetenth wiring may be electrically connected.

Note that in the present invention, the first wiring and the seventhwiring may be the same wiring; the second wiring and the eighth wiringmay be the same wiring; the third wiring and the ninth wiring may be thesame wiring; and the fourth wiring and the tenth wiring may be the samewiring.

Note that in the present invention, the first wiring and the seventhwiring may be electrically connected; the second wiring and the eighthwiring may be electrically connected; the third wiring and the ninthwiring may be electrically connected; the fourth wiring and the tenthwiring may be electrically connected; the fifth wiring and the eleventhwiring may be electrically connected; and the sixth wiring and thetwelfth wiring may be electrically connected.

Note that in the present invention, the first wiring and the seventhwiring may be the same wiring; the second wiring and the eighth wiringmay be the same wiring; the third wiring and the ninth wiring may be thesame wiring; the fourth wiring and the tenth wiring may be the samewiring; the fifth wiring and the eleventh wiring may be the same wiring;and the sixth wiring and the twelfth wiring may be the same wiring.

A liquid crystal display device of the present invention includes firstto fourth pixels each having a liquid crystal element, a first drivercircuit, a second driver circuit, a first wiring, a second wiring, athird wiring, a fourth wiring, a fifth wiring, a sixth wiring, a seventhwiring, an eighth wiring, a ninth wiring, and a tenth wiring. The firstpixel is electrically connected to the first driver circuit through thefifth wiring; the second pixel is electrically connected to the firstdriver circuit through the first wiring; the third pixel is electricallyconnected to the second driver circuit through the tenth wiring; and thefourth pixel is electrically connected to the second driver circuitthrough the sixth wiring. The first driver circuit includes a firstshift register and the second driver circuit includes a second shiftregister. The first shift register includes a plurality of flip-flops.At least one of the plurality of flip-flops includes a first transistor,a second transistor, a third transistor, and a fourth transistor. Afirst terminal of the first transistor is electrically connected to thefifth wiring; a second terminal of the first transistor is electricallyconnected to a gate terminal of the second transistor; and a gateterminal of the first transistor is electrically connected to the fifthwiring. A first terminal of the second transistor is electricallyconnected to the third wiring and a second terminal of the secondtransistor is electrically connected to the first wiring. A firstterminal of the third transistor is electrically connected to the gateterminal of the second transistor; a second terminal of the thirdtransistor is electrically connected to the second wiring; and a gateterminal of the third transistor is electrically connected to the fourthwiring. A first terminal of the fourth transistor is electricallyconnected to the first wiring; a second terminal of the fourthtransistor is electrically connected to the second wiring; and a gateterminal of the fourth transistor is electrically connected to thefourth wiring. The second shift register includes a plurality offlip-flops. At least one of the plurality of flip-flops includes a fifthtransistor, a sixth transistor, a seventh transistor, and an eighthtransistor. A first terminal of the fifth transistor is electricallyconnected to the tenth wiring; a second terminal of the fifth transistoris electrically connected to a gate terminal of the sixth transistor;and a gate terminal of the fifth transistor is electrically connected tothe tenth wiring. A first terminal of the sixth transistor iselectrically connected to the eighth wiring and a second terminal of thesixth transistor is electrically connected to the sixth wiring. A firstterminal of the seventh transistor is electrically connected to the gateterminal of the sixth transistor; a second terminal of the seventhtransistor is electrically connected to the seventh wiring; and a gateterminal of the seventh transistor is electrically connected to theninth wiring. A first terminal of the eighth transistor is electricallyconnected to the sixth wiring; a second terminal of the eighthtransistor is electrically connected to the seventh wiring; and a gateterminal of the eighth transistor is electrically connected to the ninthwiring.

Note that in the present invention, the first wiring and the sixthwiring may be electrically connected and the fifth wiring and the tenthwiring may be electrically connected.

Note that in the present invention, the first wiring and the sixthwiring may be the same wiring and the fifth wiring and the tenth wiringmay be the same wiring.

In addition, in the present invention, the second wiring and the seventhwiring may be electrically connected; the third wiring and the eighthwiring may be electrically connected; and the fourth wiring and theninth wiring may be electrically connected.

In addition, in the present invention, the second wiring and the seventhwiring may be the same wiring; the third wiring and the eighth wiringmay be the same wiring; and the fourth wiring and the ninth wiring maybe the same wiring.

In addition, in the present invention, the first wiring and the sixthwiring may be electrically connected; the second wiring and the seventhwiring may be electrically connected; the third wiring and the eighthwiring may be electrically connected; the fourth wiring and the ninthwiring may be electrically connected; and the fifth wiring and the tenthwiring may be electrically connected.

Note that in the present invention, the first wiring and the sixthwiring may be the same wiring; the second wiring and the seventh wiringmay be the same wiring; the third wiring and the eighth wiring may bethe same wiring; the fourth wiring and the ninth wiring may be the samewiring; and the fifth wiring and the tenth wiring may be the samewiring.

In addition, in the present invention, each of the first transistor, thesecond transistor, the third transistor, the fourth transistor, thefifth transistor, the sixth transistor, the seventh transistor, and theeighth transistor may be an N-channel transistor.

In addition, in the present invention, each of the first transistor, thesecond transistor, the third transistor, the fourth transistor, thefifth transistor, the sixth transistor, the seventh transistor, and theeighth transistor may have a semiconductor layer and the semiconductorlayer may be amorphous silicon.

In addition, in the present invention, a first capacitor may be providedbetween the second terminal and the gate terminal of the firsttransistor and a second capacitor may be provided between the secondterminal and the gate terminal of the fifth transistor.

A liquid crystal display device of the present invention includes firstto fourth pixels each having a liquid crystal element, a first drivercircuit, a second driver circuit, a first wiring, a second wiring, athird wiring, a fourth wiring, a fifth wiring, a sixth wiring, a seventhwiring, an eighth wiring, a ninth wiring, a tenth wiring, an eleventhwiring, a twelfth wiring, a thirteenth wiring, and a fourteenth wiring.The first pixel is electrically connected to the first driver circuitthrough the fifth wiring; the second pixel is electrically connected tothe first driver circuit through the sixth wiring; the third pixel iselectrically connected to the second driver circuit through the twelfthwiring; and the fourth pixel is electrically connected to the seconddriver circuit through the thirteenth wiring. The first driver circuitincludes a first shift register and the second driver circuit includes asecond shift register. The first shift register includes a plurality offlip-flops. At least one of the plurality of flip-flops includes a firsttransistor, a second transistor, a third transistor, a fourthtransistor, and a fifth transistor. A first terminal of the firsttransistor is electrically connected to the first wiring; a secondterminal of the first transistor is electrically connected to a gateterminal of the second transistor; and a gate terminal of the firsttransistor is electrically connected to the fifth wiring. A firstterminal of the second transistor is electrically connected to the thirdwiring and a second terminal of the second transistor is electricallyconnected to the sixth wiring. A first terminal of the third transistoris electrically connected to the second wiring; a second terminal of thethird transistor is electrically connected to the gate terminal of thesecond transistor; and a gate terminal of the third transistor iselectrically connected to the fourth wiring. A first terminal of thefourth transistor is electrically connected to the second wiring; asecond terminal of the fourth transistor is electrically connected tothe sixth wiring; and a gate terminal of the fourth transistor iselectrically connected to the fourth wiring. A first terminal of thefifth transistor is electrically connected to the second wiring; asecond terminal of the fifth transistor is electrically connected to thesixth wiring; and a gate terminal of the fifth transistor iselectrically connected to the seventh wiring. The second shift registerincludes a plurality of flip-flops. At least one of the plurality offlip-flops includes a sixth transistor, a seventh transistor, an eighthtransistor, a ninth transistor, and a tenth transistor. A first terminalof the sixth transistor is electrically connected to the eighth wiring;a second terminal of the sixth transistor is electrically connected to agate terminal of the seventh transistor; and a gate terminal of thesixth transistor is electrically connected to the twelfth wiring. Afirst terminal of the seventh transistor is electrically connected tothe tenth wiring and a second terminal of the seventh transistor iselectrically connected to the thirteenth wiring. A first terminal of theeighth transistor is electrically connected to the ninth wiring; asecond terminal of the eighth transistor is electrically connected tothe gate terminal of the seventh transistor; and a gate terminal of theeighth transistor is electrically connected to the eleventh wiring. Afirst terminal of the ninth transistor is electrically connected to thethirteenth wiring; a second terminal of the ninth transistor iselectrically connected to the ninth wiring; and a gate terminal of theninth transistor is electrically connected to the eleventh wiring. Afirst terminal of the tenth transistor is electrically connected to thethirteenth wiring; a second terminal of the tenth transistor iselectrically connected to the ninth wiring; and a gate terminal of thetenth transistor is electrically connected to the fourteenth wiring.

Note that in the present invention, the fifth wiring and the twelfthwiring may be electrically connected and the sixth wiring and thethirteenth wiring may be electrically connected.

Note that in the present invention, the fifth wiring and the twelfthwiring may be the same wiring and the sixth wiring and the thirteenthwiring may be the same wiring.

In addition, in the present invention, the first wiring and the eighthwiring may be electrically connected; the second wiring and the ninthwiring may be electrically connected; the third wiring and the tenthwiring may be electrically connected; the fourth wiring and the eleventhwiring may be electrically connected; and the seventh wiring and thefourteenth wiring may be electrically connected.

Note that in the present invention, the first wiring and the eighthwiring may be the same wiring; the second wiring and the ninth wiringmay be the same wiring; the third wiring and the tenth wiring may be thesame wiring; the fourth wiring and the eleventh wiring may be the samewiring; and the seventh wiring and the fourteenth wiring may be the samewiring.

In addition, in the present invention, the first wiring and the eighthwiring may be electrically connected; the second wiring and the ninthwiring may be electrically connected; the third wiring and the tenthwiring may be electrically connected; the fourth wiring and the eleventhwiring may be electrically connected; the fifth wiring and the twelfthwiring may be electrically connected; the sixth wiring and thethirteenth wiring may be electrically connected; and the seventh wiringand the fourteenth wiring may be electrically connected.

In addition, in the present invention, the first wiring and the eighthwiring may be the same wiring; the second wiring and the ninth wiringmay be the same wiring; the third wiring and the tenth wiring may be thesame wiring; the fourth wiring and the eleventh wiring may be the samewiring; the fifth wiring and the twelfth wiring may be the same wiring;the sixth wiring and the thirteenth wiring may be the same wiring; andthe seventh wiring and the fourteenth wiring may be the same wiring.

A liquid crystal display device of the present invention includes firstto fourth pixels each having a liquid crystal element, a first drivercircuit, a second driver circuit, a first wiring, a second wiring, athird wiring, a fourth wiring, a fifth wiring, a sixth wiring, a seventhwiring, an eighth wiring, a ninth wiring, a tenth wiring, an eleventhwiring, and a twelfth wiring. The first pixel is electrically connectedto the first driver circuit through the fifth wiring; the second pixelis electrically connected to the first driver circuit through the sixthwiring; the third pixel is electrically connected to the second drivercircuit through the eleventh wiring; and the fourth pixel iselectrically connected to the second driver circuit through the twelfthwiring. The first driver circuit includes a first shift register and thesecond driver circuit includes a second shift register. The first shiftregister includes a plurality of flip-flops. At least one of theplurality of flip-flops includes a first transistor, a secondtransistor, a third transistor, a fourth transistor, and a fifthtransistor. A first terminal of the first transistor is electricallyconnected to the fifth wiring; a second terminal of the first transistoris electrically connected to a gate terminal of the second transistor;and a gate terminal of the first transistor is electrically connected tothe fifth wiring. A first terminal of the second transistor iselectrically connected to the third wiring and a second terminal of thesecond transistor is electrically connected to the sixth wiring. A firstterminal of the third transistor is electrically connected to the gateterminal of the second transistor; a second terminal of the thirdtransistor is electrically connected to the second wiring; and a gateterminal of the third transistor is electrically connected to the fourthwiring. A first terminal of the fourth transistor is electricallyconnected to the sixth wiring; a second terminal of the fourthtransistor is electrically connected to the second wiring; and a gateterminal of the fourth transistor is electrically connected to thefourth wiring. A first terminal of the fifth transistor is electricallyconnected to the sixth wiring; a second terminal of the fifth transistoris electrically connected to the second wiring; and a gate terminal ofthe fifth transistor is electrically connected to the first wiring. Thesecond shift register includes a plurality of flip-flops. At least oneof the plurality of flip-flops includes a sixth transistor, a seventhtransistor, an eighth transistor, a ninth transistor, and a tenthtransistor. A first terminal of the sixth transistor is electricallyconnected to the eleventh wiring; a second terminal of the sixthtransistor is electrically connected to a gate terminal of the seventhtransistor; and a gate terminal of the sixth transistor is electricallyconnected to the eleventh wiring. A first terminal of the seventhtransistor is electrically connected to the ninth wiring and a secondterminal of the seventh transistor is electrically connected to thetwelfth wiring. A first terminal of the eighth transistor iselectrically connected to the eighth wiring; a second terminal of theeighth transistor is electrically connected to the gate terminal of theseventh transistor; and a gate terminal of the eighth transistor iselectrically connected to the tenth wiring. A first terminal of theninth transistor is electrically connected to the eighth wiring; asecond terminal of the ninth transistor is electrically connected to thetwelfth wiring; and a gate terminal of the ninth transistor iselectrically connected to the tenth wiring. A first terminal of thetenth transistor is electrically connected to the eighth wiring; asecond terminal of the tenth transistor is electrically connected to thetwelfth wiring; and a gate terminal of the tenth transistor iselectrically connected to the seventh wiring.

Note that in the present invention, the fifth wiring and the eleventhwiring may be electrically connected and the sixth wiring and thetwelfth wiring may be electrically connected.

Note that in the present invention, the fifth wiring and the eleventhwiring may be the same wiring and the sixth wiring and the twelfthwiring may be the same wiring.

In addition, in the present invention, the first wiring and the seventhwiring may be electrically connected; the second wiring and the eighthwiring may be electrically connected; the third wiring and the ninthwiring may be electrically connected; and the fourth wiring and thetenth wiring may be electrically connected.

In addition, in the present invention, the first wiring and the seventhwiring may be the same wiring; the second wiring and the eighth wiringmay be the same wiring; the third wiring and the ninth wiring may be thesame wiring; and the fourth wiring and the tenth wiring may be the samewiring.

In addition, in the present invention, the first wiring and the seventhwiring may be electrically connected; the second wiring and the eighthwiring may be electrically connected; the third wiring and the ninthwiring may be electrically connected; the fourth wiring and the tenthwiring may be electrically connected; the fifth wiring and the eleventhwiring may be electrically connected; and the sixth wiring and thetwelfth wiring may be electrically connected.

Note that in the present invention, the first wiring and the seventhwiring may be the same wiring; the second wiring and the eighth wiringmay be the same wiring; the third wiring and the ninth wiring may be thesame wiring; the fourth wiring and the tenth wiring may be the samewiring; the fifth wiring and the eleventh wiring may be the same wiring;and the sixth wiring and the twelfth wiring may be the same wiring.

Note that in the present invention, each of the first transistor, thesecond transistor, the third transistor, the fourth transistor, thefifth transistor, the sixth transistor, the seventh transistor, theeighth transistor, the ninth transistor, and the tenth transistor may bean N-channel transistor.

Note that in the present invention, each of the first transistor, thesecond transistor, the third transistor, the fourth transistor, thefifth transistor, the sixth transistor, the seventh transistor, theeighth transistor, the ninth transistor, and the tenth transistor mayhave a semiconductor layer and the semiconductor layer may be amorphoussilicon.

Note that in the present invention, a first capacitor may be providedbetween the second terminal and the gate terminal of the firsttransistor and a second capacitor may be provided between the secondterminal and the gate terminal of the sixth transistor.

An electronic device having any of the above-described liquid crystaldisplay devices is included in the present invention.

Note that various types of switches can be used as a switch shown inthis specification, and an electrical switch, a mechanical switch, andthe like are given as examples. That is, any element can be used as longas it can control a current flow, without limiting to a certain element.For example, it may be a transistor, a diode (e.g., a PN diode, a PINdiode, a Schottky diode, or a diode-connected transistor), a thyristor,or a logic circuit combining such elements. In the case of using atransistor as a switch, polarity (a conductivity type) of the transistoris not particularly limited to a certain type because it operates justas a switch. However, a transistor of polarity with smaller off-currentis preferably used when off-current is preferably small. A transistorprovided with an LDD region, a transistor with a multi-gate structure,and the like are given as examples of a transistor with smalleroff-current. In addition, it is preferable that an N-channel transistorbe used when a potential of a source terminal of the transistor which isoperated as a switch is closer to a low-potential-side power supply(e.g., Vss, GND, or 0 V), while a P-channel transistor be used when thepotential of the source terminal is closer to a high-potential-sidepower supply (e.g., Vdd). This is because the absolute value ofgate-source voltage of the transistor is increased, so that thetransistor can more accurately operate as a switch.

Note that a CMOS switch may be employed by using both N-channel andP-channel transistors. By employing the CMOS switch, the switch can moreprecisely operate as a switch because current can flow through theswitch when the P-channel switch or the N-channel switch is turned on.For example, voltage can be appropriately output regardless of whethervoltage of an input signal of the switch is high or low. In addition,since a voltage amplitude value of a signal for turning on or off theswitch can be made small, power consumption can be reduced. Note thatalso that when a transistor is employed as a switch, the switch includesan input terminal (one of a source terminal and a drain terminal), anoutput terminal (the other of the source terminal and the drainterminal), and a terminal for controlling electrical conduction (a gateterminal). On the other hand, when a diode is employed as a switch, theswitch does not have a terminal for controlling electrical conduction insome cases. Therefore, the number of wirings for controlling terminalscan be reduced.

Note that in this specification, the description “be connected” includesthe case where elements are electrically connected, the case whereelements are functionally connected, and the case where elements aredirectly connected. Accordingly, in the structures disclosed in thisspecification, another element may be interposed between elements havinga predetermined connection relation. For example, one or more elementswhich enable electrical connection (e.g., a switch, a transistor, acapacitor, an inductor, a resistor, and/or a diode) may be providedbetween a certain portion and another portion. In addition, one or morecircuits which enable functional connection may be provided between theportions, such as a logic circuit (e.g., an inverter, a NAND circuit, ora NOR circuit), a signal converter circuit (e.g., a DA convertercircuit, an AD converter circuit, or a gamma correction circuit), apotential level converter circuit (e.g., a power supply circuit such asa boosting circuit or a voltage lower control circuit, or a levelshifter circuit for changing a potential level of an H-level signal oran L-level signal), a voltage source, a current source, a switchingcircuit, or an amplifier circuit (e.g., a circuit which can increase thesignal amplitude, the amount of current, or the like, such as anoperational amplifier, a differential amplifier circuit, a sourcefollower circuit, or a buffer circuit), a signal generating circuit, amemory circuit, or a control circuit. Alternatively, the elements may bedirectly connected without interposing another element or anothercircuit therebetween.

In the case where elements are connected without interposing anotherelement or circuit therebetween, the description “be directly connected”is employed. In addition, in the case where the description “beelectrically connected” is employed, the following cases are includedtherein: the case where elements are electrically connected (that is,the case where the elements are connected by interposing another elementtherebetween), the case where elements are functionally connected (thatis, the elements are connected by interposing another circuittherebetween), and the case where elements are directly connected (thatis, the elements are connected without interposing another element oranother circuit therebetween).

Note that a display element, a display device, a light-emitting element,and a light-emitting device can employ various types and include variouselements. For example, as a display element, a display device, alight-emitting element, and a light-emitting device, a display medium,contrast of which changes by an electromagnetic action, such as an ELelement (e.g., an organic EL element, an inorganic EL element, or an ELelement including both organic and inorganic materials), an electronemitter, a liquid crystal element, electronic ink, a grating light valve(GLV), a plasma display panel (PDP), a digital micromirror device (DMD),a piezoelectric ceramic display, or a carbon nanotube can be employed.Note that display devices using an EL element include an EL display;display devices using an electron emitter include a field emissiondisplay (FED), an SED-type flat panel display (SED: Surface-conductionElectron-emitter Display), and the like; display devices using a liquidcrystal element include a liquid crystal display, a transmissive liquidcrystal display, a semi-transmissive liquid crystal display, areflective liquid crystal display, and the like; and display devicesusing electronic ink include electronic paper.

Note that in this specification, various types of transistors can beemployed as a transistor without limiting to a certain type. Thus, forexample, a thin film transistor (TFT) including a non-single crystalsemiconductor film typified by amorphous silicon or polycrystallinesilicon can be employed. Therefore, such a transistor can be formed attemperature lower than that of the case of using a single crystalsemiconductor film, can be formed at low cost, can be formed over alight-transmitting substrate as well as a large substrate, and cantransmit light. In addition, transmission of light in a display elementcan be controlled by using such a transistor. Further, a transistor canbe formed by using a semiconductor substrate, an SOI substrate, or thelike. Alternatively, a MOS transistor, a junction transistor, a bipolartransistor, or the like can be employed. Therefore, a transistor withfew variations, a transistor with high current supply capability, and asmall transistor can be formed, so that a circuit with low powerconsumption can be formed by using such a transistor. In addition, atransistor including a compound semiconductor such as ZnO, a-InGaZnO,SiGe, or GaAs, a thin film transistor or the like obtained by thinningsuch a compound semiconductor can be employed. Therefore, such atransistor can be formed at low temperature, can be formed at roomtemperature, and can be formed directly on a low heat-resistantsubstrate such as a plastic substrate or a film substrate. A transistoror the like formed by an inkjet method or a printing method may also beemployed. Accordingly, such a transistor can be formed at roomtemperature, can be formed at a low vacuum, and can be formed using alarge substrate. Further, since such a transistor can be formed withoutusing a mask (a reticle), layout of the transistor can be easilychanged. Furthermore, a transistor including an organic semiconductor ora carbon nanotube, or other transistors can be employed. Accordingly,the transistor can be formed using a substrate which can be bent. Notethat a non-single crystal semiconductor film may include hydrogen orhalogen. Moreover, a transistor can be formed using various types ofsubstrates. The type of a substrate is not limited to a certain type.Therefore, for example, a single crystal substrate, an SOI substrate, aglass substrate, a quartz substrate, a plastic substrate, a papersubstrate, a cellophane substrate, a stone substrate, a stainless steelsubstrate, a substrate including a stainless steel foil, or the like canbe used as a substrate. Furthermore, the transistor may be formed usingone substrate, and then, the transistor may be transferred to anothersubstrate. As another substrate to which the transistor is transferred,a single crystal substrate, an SOI substrate, a glass substrate, aquartz substrate, a plastic substrate, a paper substrate, a cellophanesubstrate, a stone substrate, a stainless steel substrate, a substrateincluding a stainless steel foil, or the like can be used. By using sucha substrate, a transistor with excellent properties or a transistor withlow power consumption can be formed, or a device with high durability orhigh heat resistance can be formed.

A structure of a transistor can be various modes without limiting to acertain structure. For example, a multi-gate structure having two ormore gate electrodes may be used. When the multi-gate structure is used,a structure where a plurality of transistors are connected in series isprovided because a structure where channel regions are connected inseries is provided. By using the multi-gate structure, off-current canbe reduced; the withstand voltage of the transistor can be increased toimprove reliability; or drain-source current does not fluctuate verymuch even if drain-source voltage fluctuates when the transistoroperates in a saturation region, so that flat characteristics can beobtained. In addition, a structure where gate electrodes are formedabove and below a channel may be used. By using the structure where gateelectrodes are formed above and below the channel, a channel region isenlarged to increase the amount of current flowing therethrough, or adepletion layer can be easily formed to decrease the S value. When thegate electrodes are formed above and below the channel, a structurewhere a plurality of transistors are connected in parallel is provided.

Further, a structure where a gate electrode is formed above a channel, astructure where a gate electrode is formed below a channel, a staggeredstructure, an inversely staggered structure, a structure where a channelregion is divided into a plurality of regions, or a structure where gateelectrodes are connected in parallel or in series can be employed. Asource electrode or a drain electrode may overlap with a channel (orpart of it). By using the structure where the source electrode or thedrain electrode may overlap with the channel (or part of it), the casecan be prevented in which electric charges are accumulated in part ofthe channel, which would result in an unstable operation. Moreover, astructure where an LDD region is provided can be employed. By providingthe LDD region, off-current can be reduced; the withstand voltage of thetransistor can be increased to improve reliability; or drain-sourcecurrent does not fluctuate very much even if drain-source voltagefluctuates when the transistor operates in the saturation region so thatflat characteristics can be obtained.

Note that various types of transistors can be used for a transistor inthis specification and the transistor can be formed using various typesof substrates. Accordingly, all of circuits may be formed using a glasssubstrate, a plastic substrate, a single crystal substrate, an SOIsubstrate, or any other substrate. When all of the circuits are formedusing the same substrate, the number of component parts can be reducedto cut cost and the number of connections to circuit components can bereduced to improve reliability. Alternatively, part of the circuits maybe formed using one substrate and another part of the circuits may beformed using another substrate. That is, not all of the circuits arerequired to be formed using the same substrate. For example, part of thecircuits may be formed with transistors using a glass substrate andanother part of the circuits may be formed using a single crystalsubstrate, so that the IC chip may be connected to the glass substrateby COG (Chip On Glass). Alternatively, the IC chip may be connected tothe glass substrate by TAB (Tape Automated Bonding) or a printed wiringboard. When part of the circuits are formed using the same substrate inthis manner, the number of the component parts can be reduced to cutcost and the number of connections to the circuit components can bereduced to improve reliability. In addition, by forming a portion withhigh driving voltage or a portion with high driving frequency, whichconsumes large power, over another substrate, increase in powerconsumption can be prevented.

Note also that one pixel corresponds to one element whose brightness canbe controlled in this specification. Therefore, for example, one pixelcorresponds to one color element and brightness is expressed with theone color element. Accordingly, in the case of a color display devicehaving color elements of R (Red), G (Green), and B (Blue), a minimumunit of an image is formed of three pixels of an R pixel, a G pixel, anda B pixel. Note that the color elements are not limited to three colors,and color elements of more than three colors may be used or a colorother than RGB may be added. For example, RGBW (W corresponds to white)may be used by adding white. In addition, RGB plus one or more colors ofyellow, cyan, magenta emerald green, vermilion, and the like may beused. Further, a color similar to at least one of R, G, and B may beadded. For example, R, G, B1, and B2 may be used. Although both B1 andB2 are blue, they have slightly different frequency. By using such colorelements, display which is closer to the real object can be performed orpower consumption can be reduced. Alternatively, as another example, inthe case of controlling brightness of one color element by using aplurality of regions, one region corresponds to one pixel. Therefore,for example, in the case of performing area gray scale display, aplurality of regions which control brightness are provided in each colorelement and gray scales are expressed with the whole regions. In thiscase, one region which controls brightness corresponds to one pixel.Thus, in that case, one color element includes a plurality of pixels.Further, in that case, regions which contribute to display may havedifferent area dimensions depending on pixels. Moreover, in theplurality of regions which control brightness in each color element,that is, in a plurality of pixels which form one color element, signalssupplied to a plurality of the pixels may be slightly varied so that theviewing angle can be widened. Note that the description “one pixel (forthree colors)” corresponds to the case where three pixels of R, G, and Bare considered as one pixel. Meanwhile, the description “one pixel (forone color)” corresponds to the case where a plurality of pixels areprovided in each color element and collectively considered as one pixel.

Note also that in this specification, pixels may be provided (arranged)in matrix. Here, description that pixels are provided (arranged) inmatrix includes the case where the pixels are arranged in a straightline and the case where the pixels are arranged in a jagged line, in alongitudinal direction or a lateral direction. Therefore, in the case ofperforming full color display with three color elements (e.g., RGB), thefollowing cases are included therein: the case where the pixels arearranged in stripes and the case where dots of the three color elementsare arranged in a so-called delta pattern. In addition, the case is alsoincluded therein in which dots of the three color elements are providedin Bayer arrangement. Note that the color elements are not limited tothree colors, and color elements of more than three colors may beemployed. RGBW (W corresponds to white), RGB plus one or more of yellow,cyan, magenta, and the like, or the like is given as an example.Further, the sizes of display regions may be different betweenrespective dots of color elements. Thus, power consumption can bereduced and the life of a light-emitting element can be prolonged.

Note that a transistor is an element having at least three terminals ofa gate, a drain, and a source. The transistor has a channel regionbetween a drain region and a source region, and current can flow throughthe drain region, the channel region, and the source region. Here, sincethe source and the drain of the transistor may change depending on thestructure, the operating condition, and the like of the transistor, itis difficult to define which is a source or a drain. Therefore, in thisspecification, a region functioning as a source and a drain may not becalled the source or the drain. In such a case, for example, one of thesource and the drain may be called a first terminal and the otherthereof may be called a second terminal. Note also that a transistor maybe an element having at least three terminals of a base, an emitter, anda collector. In this case also, one of the emitter and the collector maybe similarly called a first terminal and the other terminal may becalled a second terminal.

A gate corresponds to all or part of a gate electrode and a gate wiring(also referred to as a gate line, a gate signal line, or the like). Agate electrode corresponds to a conductive film which overlaps with asemiconductor film which forms a channel region, an LDD (Lightly DopedDrain) region, or the like with a gate insulating film interposedtherebetween. A gate wiring corresponds to a wiring for connecting agate electrode of each pixel to each other or a wiring for connecting agate electrode to another wiring.

However, there is a portion which functions as both a gate electrode anda gate wiring. Such a region may be called either a gate electrode or agate wiring. That is, there is a region where a gate electrode and agate wiring cannot be clearly distinguished from each other. Forexample, in the case where a channel region overlaps with an extendedgate wiring, the overlapped region functions as both a gate wiring and agate electrode. Accordingly, such a region may be called either a gateelectrode or a gate wiring.

In addition, a region formed of the same material as a gate electrodeand connected to the gate electrode may also be called a gate electrode.Similarly, a region formed of the same material as a gate wiring andconnected to the gate wiring may also be called a gate wiring. In astrict sense, such a region does not overlap with a channel region, ordoes not have a function of connecting the gate electrode to anothergate electrode in some cases. However, there is a region formed of thesame material as the gate electrode or the gate wiring and connected tothe gate electrode or the gate wiring because of provision of a marginin manufacturing. Thus, such a region may also be called either a gateelectrode or a gate wiring.

In a multi-gate transistor, for example, a gate electrode of onetransistor is often connected to a gate electrode of another transistorby using a conductive film which is formed of the same material as thegate electrode. Since such a region is a region for connecting the gateelectrode to another gate electrode, it may be called a gate wiring, andit may also be called a gate electrode because a multi-gate transistorcan be considered as one transistor. That is, a region which is formedof the same material as the gate electrode or the gate wiring andconnected thereto may be called either a gate electrode or a gatewiring. In addition, for example, part of a conductive film whichconnects the gate electrode and the gate wiring may also be calledeither a gate electrode or a gate wiring.

Note that a gate terminal corresponds to part of a gate region or a gateelectrode, or part or all of a region which is electrically connected tothe gate electrode.

Note also that a source corresponds to all or part of a source region, asource electrode, and a source wiring (also referred to as a sourceline, a source signal line, or the like). A source region corresponds toa semiconductor region containing a large amount of p-type impurities(e.g., boron or gallium) or n-type impurities (e.g., phosphorus orarsenic). Accordingly, a region containing a small amount of p-typeimpurities or n-type impurities, namely, an LDD (Lightly Doped Drain)region is not included in the source region. A source electrode is partof a conductive layer formed of a material different from that of asource region, and electrically connected to the source region. However,there is the case where a source electrode and a source region arecollectively called a source electrode. A source wiring is a wiring forconnecting a source electrode of each pixel to each other, or a wiringfor connecting a source electrode to another wiring.

However, there is a portion functioning as both a source electrode and asource wiring. Such a region may be called either a source electrode ora source wiring. That is, there is a region where a source electrode anda source wiring cannot be clearly distinguished from each other. Forexample, in the case where a source region overlaps with an extendedsource wiring, the overlapped region functions as both a source wiringand a source electrode. Accordingly, such a region may be called eithera source electrode or a source wiring.

In addition, a region formed of the same material as a source electrodeand connected to the source electrode, or a portion for connecting asource electrode to another source electrode may also be called a sourceelectrode. A portion which overlaps with a source region may also becalled a source electrode. Similarly, a region formed of the samematerial as a source wiring and connected to the source wiring may becalled a source wiring. In a strict sense, such a region does not have afunction of connecting the source electrode to another source electrodein some cases. However, there is a region formed of the same material asthe source electrode or the source wiring, and connected to the sourceelectrode or the source wiring because of provision of a margin inmanufacturing. Accordingly, such a region may also be called either asource electrode or a source wiring.

In addition, for example, part of a conductive film which connects asource electrode and a source wiring may be called either a sourceelectrode or a source wiring.

Note that a source terminal corresponds to part of a source region or asource electrode, or part or all of a region which is electricallyconnected to the source electrode.

Note also that the same can be said for a drain.

In this specification, a semiconductor device corresponds to a devicehaving a circuit including a semiconductor element (e.g., a transistoror a diode). The semiconductor device may also include all devices thatcan function by utilizing semiconductor characteristics. In addition, adisplay device corresponds to a device having a display element (e.g., aliquid crystal element or a light-emitting element). Note that thedisplay device may also corresponds to a display panel itself where aplurality of pixels including display elements such as liquid crystalelements or EL elements are formed over the same substrate as aperipheral driver circuit for driving the pixels. In addition, thedisplay device may also include a peripheral driver circuit providedover a substrate by wire bonding or bump bonding, namely, namely, an ICchip connected by chip on glass (COG) or the like. Further, the displaydevice may also include a flexible printed circuit (FPC) or a printedwiring board (PWB) to which an IC, a resistor, a capacitor, an inductor,a transistor, or the like is attached. The display device may alsoinclude an optical sheet such as a polarizing plate or a retardationplate. Moreover, the display device may include a backlight unit (whichmay include a light guide plate, a prism sheet, a diffusion sheet, areflective sheet, or a light source (e.g., an LED or a cold cathodetube)). In addition, a light-emitting device corresponds to a displaydevice having a self-luminous display element, particularly, such as anEL element or an element used for an FED. A liquid crystal displaydevice corresponds to a display device having a liquid crystal element.

In this specification, description that an object is “formed on” or“formed over” another object does not necessarily mean that the objectis formed in direct contact with another object. The descriptionincludes the case where two objects are not in direct contact with eachother, that is, the case where another object is interposedtherebetween. Accordingly, for example, when it is described that alayer B is formed on (or over) a layer A, it includes both of the casewhere the layer B is formed in direct contact with the layer A, and thecase where another layer (e.g., a layer C or a layer D) is formed indirect contact with the layer A and the layer B is formed in directcontact with the layer C or D. Similarly, when it is described that anobject is formed above another object, it does not necessarily mean thatthe object is in direct contact with another object, and another objectmay be interposed therebetween. Accordingly, for example, when it isdescribed that a layer B is formed above a layer A, it includes both ofthe case where the layer B is formed in direct contact with the layer A,and the case where another layer (e.g., a layer C or a layer D) isformed in direct contact with the layer A and the layer B is formed indirect contact with the layer C or D. Similarly, when it is describedthat an object is formed below or under another object, it includes bothof the case where the objects are in direct contact with each other, andthe case where the objects are not in contact with each other.

By using the present invention, deterioration in characteristics of atransistor can be suppressed. Therefore, a malfunction of a shiftregister caused by deterioration in characteristics of the transistorcan be prevented. In addition, a display defect of a liquid crystaldisplay device caused by a malfunction of the shift register can besuppressed.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIG. 1 illustrates Embodiment Mode 1;

FIG. 2 illustrates Embodiment Mode 1;

FIGS. 3A to 3E illustrate Embodiment Mode 1;

FIG. 4 illustrates Embodiment Mode 1;

FIG. 5 illustrates Embodiment Mode 1;

FIG. 6 illustrates Embodiment Mode 1;

FIG. 7 illustrates Embodiment Mode 1;

FIG. 8 illustrates Embodiment Mode 1;

FIG. 9 illustrates Embodiment Mode 1;

FIG. 10 illustrates Embodiment Mode 1;

FIG. 11 illustrates Embodiment Mode 1;

FIG. 12 illustrates Embodiment Mode 1;

FIG. 13 illustrates Embodiment Mode 2;

FIG. 14 illustrates Embodiment Mode 2;

FIG. 15 illustrates Embodiment Mode 2;

FIG. 16 illustrates Embodiment Mode 2;

FIG. 17 illustrates Embodiment Mode 2;

FIG. 18 illustrates Embodiment Mode 2;

FIG. 19 illustrates Embodiment Mode 3;

FIG. 20 illustrates Embodiment Mode 3;

FIG. 21 illustrates Embodiment Mode 3;

FIG. 22 illustrates Embodiment Mode 3;

FIG. 23 illustrates Embodiment Mode 4;

FIG. 24 illustrates Embodiment Mode 4;

FIG. 25 illustrates Embodiment Mode 4;

FIG. 26 illustrates Embodiment Mode 4;

FIG. 27 illustrates Embodiment Mode 5;

FIG. 28 illustrates Embodiment Mode 5;

FIGS. 29A to 29E illustrate Embodiment Mode 5;

FIG. 30 illustrates Embodiment Mode 5;

FIG. 31 illustrates Embodiment Mode 5;

FIG. 32 illustrates Embodiment Mode 6;

FIG. 33 illustrates Embodiment Mode 6;

FIG. 34 illustrates Embodiment Mode 6;

FIG. 35 illustrates Embodiment Mode 6;

FIG. 36 illustrates Embodiment Mode 7;

FIG. 37 illustrates Embodiment Mode 7;

FIG. 38 illustrates Embodiment Mode 7;

FIG. 39 illustrates Embodiment Mode 7;

FIG. 40 illustrates Embodiment Mode 8;

FIG. 41 illustrates Embodiment Mode 8;

FIG. 42 illustrates Embodiment Mode 8;

FIG. 43 illustrates Embodiment Mode 8;

FIG. 44 illustrates Embodiment Mode 1;

FIG. 45 illustrates Embodiment Mode 1;

FIGS. 46A and 46B illustrate Embodiment Mode 9;

FIGS. 47A to 47C illustrate Embodiment Mode 9;

FIGS. 48A and 48B illustrate Embodiment Mode 9;

FIGS. 49A to 49C illustrate Embodiment Mode 9;

FIGS. 50A to 50C illustrate Embodiment Mode 9;

FIGS. 51A and 51B illustrate Embodiment Mode 9;

FIGS. 52A and 52B illustrate Embodiment Mode 9;

FIGS. 53A and 53B illustrate Embodiment Mode 9;

FIGS. 54A and 54B illustrate Embodiment Mode 9;

FIGS. 55A and 55B illustrate Embodiment Mode 9;

FIG. 56 illustrates Embodiment Mode 11;

FIG. 57 illustrates Embodiment Mode 11;

FIG. 58 illustrates Embodiment Mode 11;

FIG. 59 illustrates Embodiment Mode 11;

FIG. 60 illustrates Embodiment Mode 11;

FIGS. 61A to 61C illustrate Embodiment Mode 12;

FIGS. 62A and 62B illustrate Embodiment Mode 12;

FIGS. 63A to 63C illustrate Embodiment Mode 13;

FIGS. 64A to 64C illustrate Embodiment Mode 12;

FIGS. 65A and 65B illustrate Embodiment Mode 10;

FIG. 66 illustrates Embodiment Mode 10;

FIG. 67 illustrates Embodiment Mode 10;

FIG. 68 illustrates Embodiment Mode 10;

FIGS. 69A and 69B illustrate Embodiment Mode 10;

FIGS. 70A and 70B illustrate Embodiment Mode 10;

FIGS. 71A and 71B illustrate Embodiment Mode 10;

FIGS. 72A to 72E illustrate Embodiment Mode 10;

FIG. 73 illustrates Embodiment Mode 10;

FIG. 74 illustrates Embodiment Mode 10;

FIGS. 75A and 75B illustrate Embodiment Mode 14;

FIGS. 76A and 76B illustrate Embodiment Mode 14;

FIGS. 77A to 77C illustrate Embodiment Mode 14;

FIG. 78 illustrates Embodiment Mode 14.

FIGS. 79A and 79B illustrate Embodiment Mode 14;

FIGS. 80A and 80B illustrate Embodiment Mode 14;

FIGS. 81A and 81B illustrate Embodiment Mode 14;

FIGS. 82A and 82B illustrate Embodiment Mode 14;

FIGS. 83A and 83B illustrate Embodiment Mode 14;

FIGS. 84A and 84B illustrate Embodiment Mode 14;

FIGS. 85A to 85G illustrate Embodiment Mode 15;

FIGS. 86A to 86C illustrate Embodiment Mode 17;

FIG. 87 illustrates Embodiment Mode 18;

FIG. 88 illustrates Embodiment Mode 18;

FIG. 89 illustrates Embodiment Mode 18;

FIGS. 90A and 90B illustrate Embodiment Mode 19;

FIG. 91 illustrates Embodiment Mode 20;

FIG. 92 illustrates Embodiment Mode 1;

FIGS. 93A to 93H illustrate Embodiment Mode 22;

FIGS. 94A and 94B illustrate Embodiment Mode 23;

FIG. 95 illustrates Embodiment Mode 23;

FIGS. 96A and 96B illustrate Embodiment Mode 23;

FIG. 97 illustrates Embodiment Mode 23;

FIG. 98 illustrates Embodiment Mode 23;

FIG. 99 illustrates Embodiment Mode 23;

FIGS. 100A and 100B illustrate Embodiment Mode 14;

FIGS. 101A and 101B illustrate Embodiment Mode 14;

FIGS. 102A to 102C illustrate Embodiment Mode 17;

FIG. 103 illustrates Embodiment Mode 21;

FIG. 104 illustrates Embodiment Mode 16; and

FIGS. 105A to 105E illustrate Embodiment Mode 16.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, the present invention will be described by way ofembodiment modes with reference to the drawings. However, the presentinvention can be implemented in various different ways and it will beeasily understood by those skilled in the art that various changes andmodifications are possible. Unless such changes and modifications departfrom the spirit and the scope of the present invention, they should beconstrued as being included therein. Therefore, the present inventionshould not be construed as being limited to the description of theembodiment modes.

Embodiment Mode 1

In this embodiment mode, a basic structure of a shift register of adisplay device of the present invention is described with reference todrawings. FIG. 1 shows a flip-flop of one stage (e.g., a first stage),which is one of a plurality of flip-flops included in a shift register.The flip-flop shown in FIG. 1 includes a first transistor 101, a secondtransistor 102, a third transistor 103, and a fourth transistor 104.Note that the flip-flop is connected to a first wiring 111, a secondwiring 112, a third wiring 113, a fourth wiring 114, a fifth wiring 115,and a sixth wiring 116. In this embodiment mode, each of the firsttransistor 101, the second transistor 102, the third transistor 103, andthe fourth transistor 104 is an N-channel transistor and is turned onwhen gate-source voltage (Vgs) exceeds the threshold voltage (Vth). Notethat the first wiring 111 and the second wiring 112 may be called afirst power supply line and a second power supply line, respectively. Inaddition, the third wiring 113 and the fourth wiring 114 may be called afirst signal line and a second signal line, respectively.

A first terminal (one of a source terminal and a drain terminal) of thefirst transistor 101 is connected to the first wiring 111; a secondterminal (the other thereof) of the first transistor 101 is connected toa gate terminal of the second transistor 102; and a gate terminal of thefirst transistor 101 is connected to the fifth wiring 115. A firstterminal of the third transistor 103 is connected to the second wiring112; a second terminal of the third transistor 103 is connected to thegate terminal of the second transistor 102; and a gate terminal of thethird transistor 103 is connected to the fourth wiring 114. A firstterminal of the second transistor 102 is connected to the sixth wiring116 and a second terminal of the second transistor 102 is connected tothe third wiring 113. A first terminal of the fourth transistor 104 isconnected to the sixth wiring 116; a second terminal of the fourthtransistor 104 is connected to the second wiring 112; and a gateterminal of the fourth transistor 104 is connected to the fourth wiring114. Note that a connection point of the second terminal of the firsttransistor 101, the gate terminal of the second transistor 102, and thefirst terminal of the third transistor 103 is denoted by a node 121.

Note that the second terminal of the third transistor 103 and the secondterminal of the fourth transistor 104 are not necessarily connected tothe second wiring 112 and may be connected to different wirings. Inaddition, the gate terminal of the third transistor 103 and the gateterminal of the fourth transistor 104 are not necessarily connected tothe fourth wiring 114 and may be connected to different wirings.

Next, operations of the flip-flop shown in FIG. 1 are described withreference to a timing chart shown in FIG. 2, and FIGS. 3A to 3E. Notethat a set period, a selection period, and a non-selection period inFIG. 2 are described. Note also that the non-selection period is dividedinto a first non-selection period, a second non-selection period, and athird non-selection period, and the first non-selection period, thesecond non-selection period, and the third non-selection period aresequentially repeated.

Note that a potential of V1 is supplied to the first wiring 111 and apotential of V2 is supplied to the second wiring 112. Note also thatV1>V2 is satisfied.

Note also that the potential of V1 is not necessarily supplied to thefirst wiring 111. Another potential may be supplied to the first wiring111, or a digital signal or an analog signal may be input to the firstwiring 111. Further, the potential of V2 is not necessarily supplied tothe second wiring 112. Another potential may be supplied to the secondwiring 112, or a digital signal or an analog signal may be input to thesecond wiring 112.

Note that a signal is input to each of the third wiring 113, the fourthwiring 114, and the fifth wiring 115. The signal input to the thirdwiring 113 is a first clock signal; the signal input to the fourthwiring 114 is a second clock signal; and the signal input to the fifthwiring 115 is a start signal. In addition, the signal input to each ofthe third wiring 113, the fourth wiring 114, and the fifth wiring 115 isa digital signal in which a potential of an H-level signal is at V1(hereinafter also referred to as an H level) and a potential of anL-level signal is at V2 (hereinafter also referred to as an L level).

Note also that the first clock signal is not necessarily input to thethird wiring 113. Another signal may be input to the third wiring 113,or a constant potential or current may be input to the third wiring 113.In addition, the second clock signal is not necessarily input to thefourth wiring 114. Another signal may be input to the fourth wiring 114,or a constant potential or current may be input to the fourth wiring114. Further, the start signal is not necessarily input to the fifthwiring 115. Another signal may be input to the fifth wiring 115, or aconstant potential or current may be input to the fifth wiring 115.

Further, the potential of the H-level signal of the signal input to eachof the third wiring 113, the fourth wiring 114, and the fifth wiring 115is not limited to V1 and the potential of the L-level signal thereof isnot limited to V2. The potentials are not particularly limited as longas the potential of the H-level signal is higher than the potential ofthe L-level signal.

Note that a signal is output from the sixth wiring 116. The signaloutput from the sixth wiring 116 is an output signal of the flip-flopand is also a start signal of the flip-flop of the next stage. Inaddition, the signal output from the sixth wiring 116 is input to thefifth wiring 115 of the flip-flop of the next stage. Further, the signaloutput from the sixth wiring 116 is a digital signal in which apotential of an H-level signal is at V1 (hereinafter also referred to asan H level) and a potential of an L-level signal is at V2 (hereinafteralso referred to as an L level).

In FIG. 2, a signal 213 is a signal input to the third wiring 113; asignal 214 is a signal input to the fourth wiring 114; a signal 215 is asignal input to the fifth wiring 115; and a signal 216 is a signaloutput from the sixth wiring 116. In addition, a potential 221 is apotential of the node 121 in FIG. 1.

First, in the set period shown in period A of FIG. 2 and FIG. 3A, thesignal 213 is at an L level, the signal 214 gets into an L level, andthe signal 215 is at an H level. Therefore, the third transistor 103 andthe fourth transistor 104 are turned off and the first transistor 101 isturned on. At this time, the second terminal of the first transistor 101corresponds to the source terminal and the potential of the node 121(the potential 221) becomes V1-Vth101 because it becomes a valueobtained by subtracting the threshold voltage of the first transistor101 (Vth101) from a potential of the fifth wiring 115. Thus, the secondtransistor 102 is turned on and a potential of the sixth wiring 116becomes V2 because it becomes equal to a potential of the third wiring113. In this manner, in the set period, an L level is output from thesixth wiring 116 while keeping the second transistor 102 on in theflip-flop.

In the selection period shown in period B of FIG. 2 and FIG. 3B, thesignal 213 becomes an H level, the signal 214 remains at the L level,and the signal 215 becomes an L level. Therefore, the third transistor103 and the fourth transistor 104 remain off and the first transistor101 is turned off. At this time, the second terminal of the secondtransistor 102 corresponds to the source terminal and the potential ofthe sixth wiring 116 starts to rise. Since the node 121 is in a floatingstate, the potential of the node 121 (the potential 221) rises at thesame time as the potential of the sixth wiring 116 by capacitivecoupling of parasitic capacitance between the gate terminal and thesecond terminal of the second transistor 102 (also referred to as abootstrap operation). Thus, the gate-source voltage Vgs of the secondtransistor 102 becomes Vth102+α (Vth 102 corresponds to the thresholdvoltage of the second transistor 102 and α corresponds to a givenpositive number) and the potential of the sixth wiring 116 becomes an Hlevel (V1). In this manner, in the selection period, an H level can beoutput from the sixth wiring 116 by setting the potential of the node121 to be V1+Vth102+α in the flip-flop.

In the first non-selection period shown in period C of FIG. 2 and FIG.3C, the signal 213 gets into an L level, the signal 214 gets into an Hlevel, and the signal 215 remains at an L level. Therefore, the thirdtransistor 103 and the fourth transistor 104 are turned on and the firsttransistor 101 remains off. The node 121 and the sixth wiring 116 getsinto an L level because a potential of the second wiring 112 is suppliedto the node 121 and the sixth wiring 116 through the third transistor103 and the fourth transistor 104, respectively.

In the second non-selection period shown in period D of FIG. 2 and FIG.3D, the signal 213 remains at an L level, the signal 214 gets into an Llevel, and the signal 215 remains at an L level. Therefore, the thirdtransistor 103 and the fourth transistor 104 are turned off and thefirst transistor 101 remains off. Thus, the node 121 and the sixthwiring 116 remain at an L level.

In the third non-selection period shown in period E of FIG. 2 and FIG.3E, the signal 213 gets into an H level, and the signal 214 and thesignal 215 remain at an L level. Therefore, the first transistor 101,the third transistor 103, and the fourth transistor 104 remain off.Thus, the node 121 and the sixth wiring 116 remain at an L level.

As described above, since the third transistor 103 and the fourthtransistor 104 are turned on only in the first non-selection period inthe flip-flop in FIG. 1, deterioration in characteristics (a thresholdvoltage shift) of the third transistor 103 and the fourth transistor 104can be suppressed. Note that in the flip-flop in FIG. 1, since the firsttransistor 101 is turned on only in the set period and the secondtransistor 102 is turned on only in the set period and the selectionperiod, deterioration in characteristics of the first transistor 101 andthe second transistor 102 can also be suppressed.

Further, in the flip-flop in FIG. 1, V2 is supplied to each of the node121 and the sixth wiring 116 in the first non-selection period in thenon-selection periods. Therefore, a malfunction of the flip-flop can besuppressed. This is because V2 is supplied to each of the node 121 andthe sixth wiring 116 at regular intervals (in the first non-selectionperiod) in the non-selection periods, and thus the potentials of thenode 121 and the sixth wiring 116 can be stabilized at V2.

Note that in the flip-flop in FIG. 1, the first transistor 101, thesecond transistor 102, the third transistor 103, and the fourthtransistor 104 are all N-channel transistors. Therefore, since amorphoussilicon can be used for a semiconductor layer of each transistor in theflip-flop in FIG. 1, a manufacturing process can be simplified, and thusmanufacturing cost can be reduced and a yield can be improved. Inaddition, a semiconductor device such as a large display panel can alsobe manufactured. Further, even when polysilicon or single crystalsilicon is used for the semiconductor layer of each transistor, themanufacturing process can be simplified.

Further, since deterioration in characteristics of each transistor canbe suppressed even when amorphous silicon in which characteristicseasily deteriorate (the threshold voltage is easily shifted) is used forthe semiconductor layer of each transistor in the flip-flop in FIG. 1, asemiconductor device such as a long-life display panel can bemanufactured.

Here, functions of the first transistor 101, the second transistor 102,the third transistor 103, and the fourth transistor 104 are described.The first transistor 101 has a function of selecting timing forsupplying the potential of the first wiring 111 and functions as atransistor for input. The second transistor 102 has a function ofselecting timing for supplying the potential of the third wiring 113 tothe sixth wiring 116 and raising the potential of the node 121 by thebootstrap operation and functions as a transistor for bootstrap. Thethird transistor 103 has a function of selecting timing for supplyingthe potential of the second wiring 112 to the node 121 and functions asa switching transistor. The fourth transistor 104 has a function ofsupplying the potential of the second wiring 112 to the sixth wiring 116and functions as a switching transistor.

Note that arrangement, the number and the like of the transistors arenot limited to those of FIG. 1 as long as operations which are similarto those of FIG. 1 are performed. As is apparent from FIGS. 3A to 3Ewhich show the operations of the flip-flop in FIG. 1, in this embodimentmode, it is only necessary to have electrical continuity in the setperiod, the selection period, the first non-selection period, the secondnon-selection period, and the third non-selection period, as shown by asolid line in each of FIGS. 3A to 3E. Thus, a transistor, anotherelement (e.g., a resistor or a capacitor), a diode, a switch, any logiccircuit or the like may be additionally provided as long as a structureis employed in which a transistor or the like is provided so as tosatisfy the above-described conditions and the structure can beoperated.

For example, as shown in FIG. 4, a capacitor 401 may be provided betweenthe gate terminal and the second terminal of the second transistor 102shown in FIG. 1. By providing the capacitor 401, the bootstrap operationin the selection period can be performed more stably. In addition, sincethe parasitic capacitance between the gate terminal and the secondterminal of the second transistor 102 can be reduced, each transistorcan be switched at high speed. Note that in the capacitor 401, a gateinsulating film may be used as an insulating layer and a gate electrodelayer and a wiring layer may be used as conductive layers; a gateinsulating film may be used as the insulating layer and a gate electrodelayer and a semiconductor layer to which an impurity is added may beused as the conductive layers; or an interlayer film (an insulatingfilm) may be used as the insulating layer and a wiring layer and atransparent electrode layer may be used as the conductive layers. Notethat portions which are common to those in FIG. 1 are denoted by commonreference numerals and description thereof is omitted.

Operations which are similar to those of FIG. 1 can also be performed ina flip-flop in FIG. 5. As shown in FIG. 5, the first transistor 101shown in FIG. 1 may be diode-connected. The first transistor 101 isdiode-connected, and thus the first wiring 111 is not necessary. Thus,one wiring and one power source potential (V1) can be eliminated fromthe structure. Note that portions which are common to those in FIG. 1are denoted by common reference numerals and description thereof isomitted.

Next, a shift register including the flip-flop of this embodiment modeis described with reference to FIG. 6.

The shift register includes a first wiring 611, a second wiring 612, athird wiring 613, a fourth wiring 614, a fifth wiring 615, a sixthwiring 616, wirings 622_1 to 622_n, and flip-flops 601_1 to 601_n of nstages. A flip-flop 601 of a (1+3N)th stage (N corresponds to 0 or apositive number) is connected to the first wiring 611, the second wiring612, the third wiring 613, and the fourth wiring 614. The flip-flop 601of a (2+3N)th stage is connected to the first wiring 611, the secondwiring 612, the fourth wiring 614, and the fifth wiring 615. Theflip-flop 601 of a (3+3N)th stage is connected to the first wiring 611,the second wiring 612, the fifth wiring 615, and the third wiring 613.In addition, for example, the flip-flop 601_2 to a flip-flop 601_n−1 asa flip-flop 601_i of an i-th stage (any one of the flip-flops 601_1 to601_n) are connected to a flip-flop 601_i−1 of an (i−1)th stage and aflip-flop 601_i+1 of an (i+1)th stage, and a connection point of theflip-flop 601_i of the i-th stage and the flip-flop 601_i+1 of the(i+1)th stage is connected to a wiring 622_i (any one of the wirings622_1 to 622_n). Note that the flip-flop 601_1 of the first stage isconnected to the sixth wiring 616 and the flip-flop 601_2 of the secondstage, and a connection point of the flip-flop 601_1 of the first stageand the flip-flop 601_2 of the second stage is connected to the wiring622_1. Note also that the flip-flop 601_n of the n-th stage is connectedto a flip-flop 601_n−1 of an (n−1)th stage and the wiring 622_n.

Note that in the flip-flop 601 of the (1+3N)th stage, the first wiring611, the second wiring 612, the third wiring 613, and the fourth wiring614 are connected to the first wiring 111, the second wiring 112, thethird wiring 113, and the fourth wiring 114 in FIG. 1, respectively. Inthe flip-flop 601 of the (2+3N)th stage, the first wiring 611, thesecond wiring 612, the fourth wiring 614, and the fifth wiring 615 areconnected to the first wiring 111, the second wiring 112, the thirdwiring 113, and the fourth wiring 114 in FIG. 1, respectively. In theflip-flop 601 of the (3+3N)th stage, the first wiring 611, the secondwiring 612, the fifth wiring 615, and the third wiring 613 are connectedto the first wiring 111, the second wiring 112, the third wiring 113,and the fourth wiring 114 in FIG. 1, respectively. In addition, forexample, in the flip-flop 601_i of the i-th stage, the fifth wiring 115and the sixth wiring 116 shown in FIG. 1 of each of the flip-flop 601_2to the flip-flop 601_n−1 are connected to the sixth wiring 116 shown inFIG. 1 of the flip-flop 601_i−1 of the (i−1)th stage and the fifthwiring 115 shown in FIG. 1 of the flip-flop 601_i+1 of the (i+1)thstage, respectively. Note also that the fifth wiring 115 and the sixthwiring 116 shown in FIG. 1 of the flip-flop 601_1 of the first stage areconnected to the sixth wiring 616 shown in FIG. 6 and the fifth wiring115 shown in FIG. 1 of the flip-flop 601_2 of the second stage,respectively. Note also that the fifth wiring 115 and the sixth wiring116 shown in FIG. 1 of the flip-flop 601_n of the n-th stage areconnected to the sixth wiring 116 shown in FIG. 1 of the flip-flop601_n−1 of the (n−1)th stage and the wiring 622_n shown in FIG. 6,respectively.

Next, FIG. 92 shows one mode of a top plan view of the shift registershown in FIG. 6. Note that the shift register shown in FIG. 92 is ashift register in the case of using the flip-flop in FIG. 1, and theflip-flop 601 n of the n-th stage and the flip-flop 601_n+1 of the(n+1)th stage are shown. Each of the flip-flops included in the shiftregister in FIG. 92 includes the first transistor 101, the secondtransistor 102, the third transistor 103, and the fourth transistor 104.In addition, the flip-flops included in the shift register in FIG. 92are connected to the first wiring 611, the second wiring 612, the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615. Note thateach of the first transistor 101, the second transistor 102, the thirdtransistor 103, and the fourth transistor 104 is an inversely staggeredtransistor and is described as a channel-etched type transistor. Notealso that each of the first transistor 101, the second transistor 102,the third transistor 103, and the fourth transistor 104 may be achannel-protected type. Alternatively, each of the first transistor 101,the second transistor 102, the third transistor 103, and the fourthtransistor 104 may be a top-gate transistor.

In addition, a layout diagram of the shift register shown in FIG. 92includes a first conductive film 9201, a semiconductor layer 9202, acontact 9203, and a second conductive film 9204. Note that the firstconductive film 9201 functions as a gate electrode. The semiconductorlayer 9202 is an intrinsic non-crystalline semiconductor film in whichan impurity is not included. The contact 9203 electrically connects thefirst conductive film 9201 and the second conductive film 9204.

In the shift register in FIG. 92, wiring width of the first wiring 611can be made smaller than wiring width of the third wiring 613, wiringwidth of the fourth wiring 614, and wiring width of the fifth wiring615. This is because the amount of current flowing through the firstwiring 611 is smaller than the amount of current flowing through thethird wiring 613, the fourth wiring 614, and the fifth wiring 615, sothat operations of the shift register are hardly adversely affected evenwhen the wiring width of the first wiring 611 is made smaller.Similarly, in the shift register in FIG. 92, wiring width of the secondwiring 612 can be made smaller than the wiring width of the third wiring613, the wiring width of the fourth wiring 614, and the wiring width ofthe fifth wiring 615. Note that since the amount of current flowingthrough the second wiring 612 is larger than the amount of the currentflowing through the first wiring 611, it is preferable that the wiringwidth of the second wiring 612 is larger than the wiring width of thefirst wiring 611. Therefore, in the shift register in FIG. 92, pitch ofthe flip-flop for one stage can be made small. In addition, in the shiftregister in FIG. 92, each transistor can be efficiently provided.Further, in the shift register in FIG. 92, channel width of eachtransistor can be made large.

Further, in the shift register in FIG. 92, a bootstrap operation can beeasily performed by making the channel width of the second transistor102 large. This is because when the channel width of the secondtransistor 102 is large, the parasitic capacitance between the gateterminal and the second terminal of the second transistor 102 becomeslarge. Furthermore, in the shift register in FIG. 92, high drivecapability can be obtained by making the channel width of the secondtransistor 102 large. This is because when the channel width of thesecond transistor 102 is large, current supply capability of the secondtransistor 102 becomes high. Note that as described above, in the shiftregister in FIG. 92, an area where each transistor can be provided canbe increased by making the wiring width of the first wiring 611 and thesecond wiring 612 small. In that case, in the shift register in FIG. 92,higher drive capability can be obtained by preferentially making thechannel width of the second transistor 102 large. Therefore, it ispreferable that the channel width of the second transistor 102 be madelarger than the channel width of the first transistor 101, the channelwidth of the third transistor 103, and the channel width of the fourthwiring 104.

Moreover, in the shift register in FIG. 92, the channel width of thesecond transistor 102 can be made large by forming a channel of thesecond transistor 102 with a U-shape.

Characteristics of the layout diagram shown in FIG. 92 can also beapplied to other shift registers.

Next, operations of the shift register shown in FIG. 6 are describedwith reference to a timing chart shown in FIG. 7.

Note that the potential of V1 is supplied to the first wiring 611 andthe potential of V2 is supplied to the second wiring 612. Note also thatV1>V2 is satisfied.

Note also that the potential of V1 is not necessarily supplied to thefirst wiring 611. Another potential may be supplied to the first wiring611, or a digital signal or an analog signal may be input to the firstwiring 611. Further, the potential of V2 is not necessarily supplied tothe second wiring 612. Another potential may be supplied to the secondwiring 612, or a digital signal or an analog signal may be input to thesecond wiring 612.

Note that a signal is input to each of the third wiring 613, the fourthwiring 614, the fifth wiring 615, the sixth wiring 616. The signalsinput to the third wiring 613, the fourth wiring 614, and the sixthwiring 615 are clock signals having three phases which are shifted by120 degrees. The signal input to the sixth wiring 616 is a start signal.In addition, the signal input to each of the third wiring 613, thefourth wiring 614, the fifth wiring 615, and the sixth wiring 616 is adigital signal in which a potential of an H-level signal is at V1 and apotential of an L-level signal is at V2.

Note also that the clock signals having three phases which are shiftedby 120 degrees are nut necessarily input to the third wiring 613, thefourth wiring 614, and the fifth wiring 615. Another signal may be inputto each of the third wiring 613, the fourth wiring 614, and the fifthwiring 615, or a constant potential or current may be input to each ofthe third wiring 613, the fourth wiring 614, and the fifth wiring 615.In addition, the start signal is not necessarily input to the sixthwiring 616. Another signal may be input to the sixth wiring 616, or aconstant potential or current may be input to the sixth wiring 616.

Further, the potential of the H-level signal of the signals input toeach of the third wiring 613, the fourth wiring 614, the fifth wiring615, and the sixth wiring 616 is not limited to V1 and the potential ofthe L-level signal thereof is not limited to V2. The potentials are notparticularly limited as long as the potential of the H-level signal ishigher than the potential of the L-level signal.

Note that a signal is output from the wiring 622. For example, a signaloutput from the wiring 622_i (i corresponds to a given positive number)is an output signal of the flip-flop 601_i of the i-th stage and is alsoan input signal of the flip-flop 601_i+1 of the (i+1)th stage.

In FIG. 7, a signal 716 is a signal input to the sixth wiring 616. Inaddition, a signal 722_1, a signal 722_i , a signal 722_i+1, and asignal 722_n are signals output from the wiring 622 of a first stage,the wiring 622 of an i-th stage, the wiring 622 of an (i+1)th stage, andthe wiring 622 of an n-th stage (potentials of the wiring 622),respectively.

As shown in FIG. 7, for example, when the flip-flop 601_i of the i-thstage enters a selection period, the H-level signal (722_i ) is outputto the wiring 622_i of an i-th row. At this time, the flip-flop 601_i+1of the (i+1)th stage gets into a set period and an L-level signal isoutput to the wiring 622_i+1. After that, the flip-flop 601_i of thei-th stage gets into a first non-selection period and an L-level signalis output to the wiring 622_i of the i-th row. At this time, theflip-flop 601_i+1 of the (i+1)th stage enters the selection period andan H-level signal is output to the wiring 622_i+1. After that, theflip-flop 601_i of the i-th stage enters a second non-selection periodand the wiring 622_i gets into a floating state while being kept at an Llevel. At this time, the flip-flop 601_i+1 of the (i+1)th stage entersthe first non-selection period and an L-level signal is output to thewiring 622_i+1. After that, the flip-flop 601_i of the i-th stage entersa third non-selection period and the wiring 622_i is kept in thefloating state while being kept at an L level. At this time, theflip-flop 601_i+1 of the (i+1)th stage enters the second non-selectionperiod and the wiring 622_i+1 gets into a floating state while beingkept at an L level. After that, in the flip-flop 601_i of the i-thstage, the first non-selection period, the second non-selection period,and the third non-selection period are sequentially repeated until thenext set period. Similarly, in the flip-flop 601_i+1 of the (i+1)thstage, the third non-selection period, the first non-selection period,and the second non-selection period are sequentially repeated until thenext set period (the selection period of the flip-flop 601_i of the i-thstage).

As described above, since the three-phase clock signals can be used inthe shift register in FIG. 6, the number of rises or falls can bereduced and power can be saved. In addition, since the number of stagesof the flip-flops 601 connected to each clock signal line (each of thethird wiring 613, the fourth wiring 614, and the fifth wiring 615) isreduced to two-third that of the case of using single-phase clocksignals in each of the shift registers of this embodiment mode, a loadof each clock signal line can be reduced.

Note that in the shift register in FIG. 6, an output signal of theflip-flop 601 of each stage may be output to the wiring 622 of eachstage through a buffer. FIG. 8 shows such a structure. Since theflip-flop 601 of each stage is connected to the wiring 622 of each stagethrough a buffer 801 in a shift register in FIG. 8, a wide margin at thetime of operation can be obtained. This is because operations of theshift register are not adversely affected even when a large load isconnected to the wiring 622 and delay or waveform dullness occurs in asignal of the wiring 622. Note that a logic circuit such as an inverter,a NAND, or a NOR, an operational amplifier or the like, or a circuit inwhich these are combined can be used as the buffer 801.

Next, a display device including the shift register of this embodimentmode is described with reference to FIG. 9.

The display device includes a signal line driver circuit 901, a scanline driver circuit 902, and a pixel portion 903. The pixel portion 903includes a plurality of signal lines S1 to Sm extended from the signalline driver circuit 901 in a column direction, a plurality of scan linesG1 to Gn extended from the scan line driver circuit 902 in a rowdirection, and a plurality of pixels 904 arranged in matrix inaccordance with the signal lines S1 to Sm and the scan lines G1 to Gn.In addition, each of the pixels 904 is connected to a signal line Sj(any one of the signal lines S1 to Sm) and a scan line Gi (any one ofthe scan lines G1 to Gn).

Note that the scan lines Gi to Gn correspond to the wirings 622_1 to622_n in FIGS. 6 and 8.

Note that a wiring or an electrode is formed to have one element or aplurality of elements selected from a group of aluminum (Al), tantalum(Ta), titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd),chromium (Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag),copper (Cu), magnesium (Mg), scandium (Sc), cobalt (Co), zinc (Zn),niobium (Nb), silicon (Si), phosphorus (P), boron (B), arsenic (As),gallium (Ga), indium (In), tin (Sn), and oxygen (O), or a compound or analloy material including one or a plurality of the elements selectedfrom the above-described group as a component (e.g., indium tin oxide(ITO), indium zinc oxide (IZO), indium tin oxide to which silicon oxideis added (ITSO), zinc oxide (ZnO), aluminum neodymium (Al—Nd), ormagnesium silver (Mg—Ag)), a substance in which these compounds arecombined, or the like. Alternatively, the wiring or the electrode isformed to have a compound of silicon and any one of the above-describedmaterials (silicide) (e.g., aluminum silicon, molybdenum silicon, ornickel silicide) or a compound of nitrogen and any one of theabove-described materials (e.g., titanium nitride, tantalum nitride, ormolybdenum nitride). Note also that a large amount of n-type impurities(e.g., phosphorus) or p-type impurities (e.g., boron) may be included insilicon (Si). By including the impurities, conductivity is improved andbehavior similar to a normal conductor is exhibited, so that the wiringor the electrode can be easily utilized as a wiring or an electrode.Silicon may be single crystal silicon, polycrystalline silicon(polysilicon), or amorphous silicon. When single crystal silicon orpolycrystalline silicon is used, resistance can be reduced. Whenamorphous silicon is used, the wiring or the electrode can bemanufactured with a simple manufacturing process. Since aluminum andsilver have high conductivity, signal delay can be reduced. In addition,aluminum and silver are easily etched and patterned, so that minuteprocessing can be performed. Since copper has high conductivity, signaldelay can be reduced. Molybdenum is preferable because it can bemanufactured without causing a problem such as a material defect evenwhen molybdenum is in contact with an oxide semiconductor such as ITO orIZO or silicon, patterning and etching are easily performed, and heatresistance is high. Titanium is preferable because it can bemanufactured without causing a problem such as a material defect evenwhen titanium is in contact with an oxide semiconductor such as ITO orIZO or silicon, and heat resistance is high. Tungsten is preferablebecause heat resistance is high. Neodymium is preferable because heatresistance is high. In particular, it is preferable to use an alloy ofneodymium and aluminum because heat resistance is improved and a hillockdoes not easily generated in aluminum. Silicon is preferable because itcan be formed at the same time as a semiconductor layer included in atransistor and heat resistance is high. Indium tin oxide (ITO), indiumzinc oxide (IZO), indium tin oxide to which silicon oxide is added(ITSO), zinc oxide (ZnO), and silicon (Si) are preferable because thesematerials have light-transmitting properties and can be used for aportion which transmits light. For example, these materials can be usedfor a pixel electrode or a common electrode.

Note that a wiring or an electrode may be formed of any one of theabove-described material with a single-layer structure or a multi-layerstructure. By forming the wiring or the electrode with a single-layerstructure, a manufacturing process can be simplified, processing timecan be shortened, and cost can be reduced. Alternatively, by forming thewiring or the electrode with a multi-layer structure, an advantage ofeach material is utilized and a disadvantage of one of the materials isreduced by using another material, so that a wiring or an electrode withhigh performance can be formed. For example, by including a materialwith low resistance (e.g., aluminum) in a multi-layer structure,resistance in the wiring can be reduced. In addition, by including amaterial with high heat resistance, for example, by employing astacked-layer structure in which a material with low heat resistance andhaving a different advantage is sandwiched by materials with high heatresistance, heat resistance in the wiring or the electrode as a wholecan be improved. For example, a stacked-layer structure in which a layerincluding aluminum is sandwiched with layers including molybdenum ortitanium is preferable. Further, when there is a portion which is indirect contact with a wiring, an electrode, or the like formed ofanother material, the portion and the wiring, the electrode, or the likeformed of another material may adversely affect each other. For example,in some cases, one material enters the other material and changesproperties thereof, so that an original purpose cannot be achieved, or aproblem in manufacturing may occurs, so that normal manufacturing cannotbe performed. In such a case, by sandwiching or covering a certain layerwith different layers, the problem can be solved. For example, whenindium tin oxide (ITO) is to be in contact with aluminum, it ispreferable to interpose titanium or molybdenum therebetween. Moreover,when silicon is to be in contact with aluminum, it is preferable tointerpose titanium or molybdenum therebetween.

Note that the wiring or the electrode described above can also beapplied to other display devices and shift registers.

Note also that the signal line driver circuit 901 inputs a potential orcurrent in accordance with a video signal to each of the signal lines S1to Sm. In addition, the signal line driver circuit 901 is notnecessarily formed over the same substrate as the pixel portion 903. Thesignal line driver circuit 901 may be formed on a single crystalsubstrate such as an IC. Alternatively, part of the signal line drivercircuit 901 may be formed over the same substrate as the pixel portion903 and the rest of the signal line driver circuit 901 may be formed ona single crystal substrate such as an IC.

Note that the scan line driver circuit 902 inputs a signal to each ofthe scan line G1 to Gn and sequentially selects (hereinafter alsoreferred to as scans) the scan lines G1 to Gn starting from a first row.A plurality of the pixels 904 connected to the selected scan lines areselected at the same time. Note also that a period in which one scanline is selected is called one gate selection period and a period inwhich one scan line is not selected is called a non-selection period. Inaddition, the shift register shown in FIG. 6 or FIG. 8 can be employedas the scan line driver circuit 902. Further, the scan line drivercircuit 902 is formed over the same substrate as the pixel portion 903.

Note also that a potential or current in accordance with a video signalis input to the pixel 904 from the signal line driver circuit 901through the signal line when the pixel 904 is selected. However, whenthe pixel 904 is not selected, a potential or current in accordance witha video signal is not input to the pixel 904.

Next, operations of the display device shown in FIG. 9 are describedwith reference to a timing chart in FIG. 10. Note that FIG. 10 shows oneframe period which corresponds to a period for displaying an image forone screen. Note that although one frame period is not particularlylimited, it is preferable that one frame period be 1/60 second or lessso that a person viewing an image does not perceive a flicker.

Note that the timing chart in FIG. 10 shows selection timing of each ofthe scan line G1 of a first row, the scan line Gi of an i-th row, thescan line Gi+1 of an (i+1)th row, and the scan line Gn of an n-th row.

In FIG. 10, for example, the scan line Gi of the i-th row is selectedand a plurality of the pixels 904 connected to the scan line Gi areselected. Then, a video signal is written to each of a plurality of thepixels 904 connected to the scan line Gi, and luminance ortransmittivity of each display element becomes a value which is inaccordance with the video signal. After that, when the scan line Gi ofthe i-th row is not selected, the scan line Gi+1 of the (i+1)th row isselected and a plurality of the pixels 904 connected to the scan lineGi+1 are selected. Then, a video signal is written to each of aplurality of the pixels 904 connected to the scan line Gi+1, andluminance or transmittivity of each display element becomes a valuewhich is in accordance with the video signal. Note that since each ofthe pixels 904 holds the written video signal when it is not selected,each display element keeps luminance or transmittivity in accordancewith the video signal.

As described above, each of the scan lines G1 to Gn is selected in onegate selection period in one frame period, and each of the scan lines G1to Gn enters a non-selection period in periods other than the one gateselection period and is not selected. Since length of the one gateselection period is approximately equal in length to length of the oneframe period divided by n, almost all of the one frame period is thenon-selection period. That is, in the case of employing the shiftregister shown in FIG. 6 or FIG. 8 as the scan line driver circuit 902,the first non-selection period, the second non-selection period, and thethird non-selection period are sequentially repeated in almost all ofone frame period in each of the flip-flops 601_1 to 601_i shown in FIG.6 and FIG. 8. Therefore, since the scan line driver circuit 902 cansuppress deterioration of the transistor included in each of theflip-flops 601_1 to 601_i shown in FIG. 6 or FIG. 8, the life of thescan line driver circuit 902 can be extended. Further, the life of thedisplay device in FIG. 9 in which the long-life scan line driver circuit902 and the pixel portion 903 are formed over the same substrate can beextended.

Note that the number, arrangement, and the like of each driver circuitare not limited to those of FIG. 9 as long as a pixel is selected and avideo signal can be written to the pixel as shown in FIG. 9.

For example, as shown in FIG. 11, the scan lines G1 to Gn may be scannedwith a first scan line driver circuit 1101 and a second scan line drivercircuit 1102. Note that each of the first scan line driver circuit 1101and the second scan line driver circuit 1102 has a structure which issimilar to that of the scan line driver circuit 902 shown in FIG. 9 andscans the scan lines G1 to Gn with the same timing. By scanning the scanlines G1 to Gn with the first scan line driver circuit 1101 and thesecond scan line driver circuit 1102, delay or dullness of a signaloutput to each of the scan lines G1 to Gn can be reduced and the scanlines G1 to Gn are scanned at high speed. That is, the display device inFIG. 11 can be made large because delay or dullness of a signal outputto each of the scan lines G1 to Gn is reduced even when a panel size isincreased and wiring resistance or parasitic capacitance of the scanlines G1 to Gn is increased. In addition, although it is necessary thatthe scan lines G1 to Gn be scanned at high speed due to increase in thepanel size or increase in the number of the pixels because of making thepanel high definition, the display device in FIG. 11 can be made largeand can achieve high definition because the scan lines G1 to Gn can bescanned at high speed. Further, even when a defect occurs in one of thefirst scan line driver circuit 1101 and the second scan line drivercircuit 1102, the scan lines G1 to Gn of the other thereof can bescanned. Therefore, the display device in FIG. 11 can have redundancy.Note that portions which are common to those in FIG. 9 are denoted bycommon reference numerals and description thereof is omitted. Note alsothat similarly to FIG. 9, the timing chart in FIG. 10 can be used forthe display device in FIG. 11.

A pixel is selected and a video signal can be written to the pixelsimilarly to FIG. 9 also in a display device shown in FIG. 12. As shownin FIG. 12, the scan lines G1 to Gn may be scanned row by row with afirst scan line driver circuit 1201 and a second scan line drivercircuit 1202. Note that each of the first scan line driver circuit 1201and the second scan line driver circuit 1202 has a structure which issimilar to that of the scan line driver circuit 902 shown in FIG. 9, buthas different drive timing. By scanning the scan lines of odd-numberedrows with the first scan line driver circuit 1201 and scanning the scanlines of even-numbered rows with the second scan line driver circuit1202, drive frequency of the first scan line driver circuit 1201 and thesecond scan line driver circuit 1202 can be decreased, and a pitch ofeach of the flip-flop included in the first scan line driver circuit1201 and the second scan line driver circuit 1202 for one stage can bewidened. That is, power can be saved in the display device in FIG. 12because drive frequency of the first scan line driver circuit 1201 andthe second scan line driver circuit 1202 can be decreased. In addition,since the pitch of each of the flip-flop included in the first scan linedriver circuit 1201 and the second scan line driver circuit 1202 for onestage is widened in the display device in FIG. 12, layout can beefficiently performed and a frame can be made small. Further, since thefirst scan line driver circuit 1201 and the second scan line drivercircuit 1202 are provided from side to side in the display device inFIG. 12, the frame on the left side can be made equal to the frame onthe right side. Note that portions which are common to those in FIG. 9are denoted by common reference numerals and description thereof isomitted. Note also that similarly to FIG. 9, the timing chart in FIG. 10can be used for the display device in FIG. 12.

In addition, a pixel is selected and a video signal can be written tothe pixel similarly to FIG. 9 also in a display device shown in FIG. 44.As shown in FIG. 44, the scan lines G1 to Gn may be scanned row by rowwith a first scan line driver circuit 4402 and a second scan line drivercircuit 4403. In addition, the pixels 904 are connected to right andleft signal lines row by row. For example, a plurality of the pixels 904of a j-th column are connected to a signal line Sj (any one of thesignal line S1 to a signal line Sm+1) in the i-th row; the plurality ofpixels 904 of the j-th column are connected to a signal line Sj+1 in the(i+1)th row; and the plurality of pixels 904 of the j-th column areconnected to a signal line Sj−1 in the (i−1)th row.

Next, operations of the display device shown in FIG. 44 are describedwith reference to a timing chart in FIG. 45. Note that FIG. 45 shows oneframe period which corresponds to a period for displaying an image forone screen. Note that although one frame period is not particularlylimited, it is preferable that one frame period be 1/60 second or lessso that a person viewing an image does not perceive a flicker.

Note that the timing chart in FIG. 45 shows selection timing of each ofthe scan line G1 of the first row, the scan line Gi−1 of the (i−1)throw, the scan line Gi of the i-th row, the scan line Gi+1 of the (i+1)throw, and the scan line Gn of the n-th row. In the timing chart in FIG.45, one selection period is divided into a selection period Ta and aselection period Tb.

Note that in the display device in FIG. 44, dot inversion driving can beperformed just by inputting a positive video signal and a negative videosignal to each signal line in each column in one frame period. Inaddition, in the display device in FIG. 44, frame inversion driving canbe performed by inverting polarity of each video signal input to eachsignal line in each one frame period. Note also that the timing chart inFIG. 45 shows the case where dot inversion driving and frame inversiondriving are performed in the display device.

In FIG. 45, for example, the selection period Ta of the scan line Gi ofthe i-th row overlaps with the selection period of the scan line Gi−1 ofthe (i−1)th row, and the selection period Tb of the scan line Gi of thei-th row overlaps with the selection period of the scan line Gi+1 of the(i+1)th row. Therefore, in the selection period Ta, a video signal whichis similar to a video signal input to the pixel 904 of the (i−1)th rowand a (j+1)th column is input to the pixel 904 of the i-th row and thej-th column. In the selection period Tb, a video signal which is similarto the video signal input to the pixel 904 of the i-th row and the j-thcolumn is input to the pixel 904 of the (i+1)th row and the (j−1)thcolumn. Note that the video signal input to each of the pixels 904 inthe selection period Tb is an original video signal, and the videosignal input to each of the pixels 904 in the selection period Ta is aprecharge video signal of each of the pixels 904. Therefore, each of thepixels 904 is precharged by the video signal input in the selectionperiod Ta and holds the video signal input in the selection period Tb.

As described above, since the video signal can be written to each of thepixels 904 at high speed, the display device in FIG. 44 can be easilymade large and can easily achieve high definition. In addition, since avideo signal having the same polarity is input to each signal line inone frame period, there is not much charging and discharging of eachsignal line and low power consumption can be achieved. Further, since aload of an IC for supplying the video signal can be greatly reduced inthe display device in FIG. 44, heat generation, power consumption, andthe like can be reduced. Furthermore, drive frequency of the first scanline driver circuit 4402 and the second scan line driver circuit 4403can be reduced approximately in half.

Note that another wiring or the like may be added to each of the displaydevices in FIGS. 9, 11, 12 and 44 depending on the structure of thepixels 904. For example, a constant power supply line, a scan line, acapacitor line, or the like may be added. Note also that in the case ofadding a scan line, a scan line driver circuit to which the shiftregister shown in FIGS. 6 and 8 is applied may be added.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 2

In this embodiment mode, a flip-flop having a structure which isdifferent from that of Embodiment Mode 1 is shown in FIG. 13. Note thatportions which are similar to Embodiment Mode 1 are denoted by commonreference numerals and detailed description of the portions which arethe same and portions which have similar functions is omitted.

The flip-flop shown in FIG. 13 includes the first transistor 101, thesecond transistor 102, the third transistor 103, the fourth transistor104, and a fifth transistor 1305. Note that the flip-flop is connectedto the first wiring 111, the second wiring 112, the third wiring 113,the fourth wiring 114, the fifth wiring 115, the sixth wiring 116, and aseventh wiring 1317. In this embodiment mode, the fifth transistor 1305is an N-channel transistor and is turned on when gate-source voltage(Vgs) exceeds the threshold voltage (Vth). Note that the seventh wiring1317 may be called a third signal line.

The first terminal (one of the source terminal and the drain terminal)of the first transistor 101 is connected to the first wiring 111; thesecond terminal (the other thereof) of the first transistor 101 isconnected to the gate terminal of the second transistor 102; and thegate terminal of the first transistor 101 is connected to the fifthwiring 115. The first terminal of the third transistor 103 is connectedto the gate terminal of the second transistor 102; the second terminalof the third transistor 103 is connected to the second wiring 112; andthe gate terminal of the third transistor 103 is connected to the fourthwiring 114. The first terminal of the second transistor 102 is connectedto the third wiring 113 and the second terminal of the second transistor102 is connected to the sixth wiring 116. The first terminal of thefourth transistor 104 is connected to the sixth wiring 116; the secondterminal of the fourth transistor 104 is connected to the second wiring112; and the gate terminal of the fourth transistor 104 is connected tothe fourth wiring 114. A first terminal of the fifth transistor 1305 isconnected to the sixth wiring 116; a second terminal of the fifthtransistor 1305 is connected to the second wiring 112; and a gateterminal of the fifth transistor 1305 is connected to the seventh wiring1317.

Note that the second terminal of the third transistor 103, the secondterminal of the fourth transistor 104, and the second terminal of thefifth transistor 1305 are not necessarily connected to the second wiring112 and may be connected to different wirings. In addition, the gateterminal of the third transistor 103 and the gate terminal of the fourthtransistor 104 are not necessarily connected to the fourth wiring 114and may be connected to different wirings.

Next, operations of the flip-flop shown in FIG. 13 are described withreference to a timing chart in FIG. 14. Note that FIG. 14 is a timingchart in the case where the flip-flop in FIG. 13 is operated similarlyto the flip-flop shown in FIG. 1. Note that portions which are common tothose in FIG. 2 are denoted by common reference numerals and descriptionthereof is omitted.

Note that a signal is input to the seventh wiring 1317. The signal inputto the seventh wiring 1317 is a third clock signal. In addition, thesignal input to the seventh wiring 1317 is a digital signal in which apotential of an H-level signal is at V1 (hereinafter also referred to asan H level) and a potential of an L-level signal is at V2 (hereinafteralso referred to as an L level).

Note also that the third clock signal is not necessarily input to theseventh wiring 1317. Another signal may be input to the seventh wiring1317, or a constant potential or current may be input to the seventhwiring 1317.

In FIG. 14, a signal 1417 is a signal input to the seventh wiring 1317.

In the flip-flop in FIG. 13, the fifth transistor 1305 is turned on in aset period and a second non-selection period. In addition, the sixthwiring 116 remains at an L level because a potential of the secondwiring 112 is supplied to the sixth wiring 116 through the fifthtransistor 1305.

As described above, in the flip-flop in FIG. 13, V2 is supplied to thesixth wiring 116 in a first non-selection period and the secondnon-selection period from the first non-selection period, the secondnon-selection period, and a third non-selection period. Therefore, amalfunction of the flip-flop can be further suppressed. This is becauseV2 is supplied to the sixth wiring 116 at regular intervals (in thefirst non-selection period and the second non-selection period) in thenon-selection period, and thus a potential of the sixth wiring 116 canbe stabilized at V2.

Further, since the fifth transistor 1305 of the flip-flop in FIG. 13 isturned on only in the set period and the second non-selection period,deterioration in characteristics of the fifth transistor 1305 can besuppressed.

Note that in the flip-flop in FIG. 13, the first transistor 101, thesecond transistor 102, the third transistor 103, the fourth transistor104, and the fifth transistor 1305 are all N-channel transistors.Therefore, since amorphous silicon can be used for a semiconductor layerof each transistor in the flip-flop in FIG. 13, a manufacturing processcan be simplified, and thus manufacturing cost can be reduced and ayield can be improved. In addition, a semiconductor device such as alarge display panel can also be manufactured. Further, even whenpolysilicon or single crystal silicon is used for the semiconductorlayer of each transistor, the manufacturing process can be simplified.

Further, since deterioration in characteristics of each transistor canbe suppressed even when amorphous silicon in which characteristicseasily deteriorate (the threshold voltage is easily shifted) is used forthe semiconductor layer of each transistor in the flip-flop in FIG. 13,a semiconductor device such as a long-life display panel can bemanufactured.

Here, a function of the fifth transistor 1305 is described. The fifthtransistor 1305 has a function of selecting timing for supplying thepotential of the second wiring 112 to the sixth wiring 116 and functionsas a switching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 13 as long as operations which are similarto those of FIG. 13 are performed. Thus, a transistor, another element(e.g., a resistor or a capacitor), a diode, a switch, any logic circuit,or the like may be additionally provided.

For example, as shown in FIG. 15, a capacitor 1501 may be providedbetween the gate terminal and the second terminal of the secondtransistor 102 shown in FIG. 13. By proving the capacitor 1501, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 102 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 1501, a gate insulating film may be used as an insulatinglayer, and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer, and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer, and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.13 are denoted by common reference numerals and description thereof isomitted.

Operations which are similar to those of FIG. 13 can also be performedin a flip-flop in FIG. 16. As shown in FIG. 16, the first transistor 101shown in FIG. 13 may be diode-connected. The first transistor 101 isdiode-connected, so that the first wiring 111 is not necessary. Thus,one wiring and one power source potential (V1) can be eliminated fromthe structure. Note that portions which are common to those in FIG. 13are denoted by common reference numerals and description thereof isomitted.

Subsequently, a shift register including the flip-flop of thisembodiment mode is described with reference to FIG. 17. Note thatportions which are common to those in FIG. 6 in which the shift registerincluding the flip-flop shown in FIG. 1 is described are denoted bycommon reference numerals and description thereof is omitted.

The shift register includes the first wiring 611, the second wiring 612,the third wiring 613, the fourth wiring 614, the fifth wiring 615, thesixth wiring 616, the wirings 622_1 to 622_n, and flip-flops 1701_1 to1701_n of n stages. The flip-flops 1701_1 to 1701_n of the n stages areconnected to the first wiring 611, the second wiring 612, the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615,respectively. In addition, for example, the flip-flop 1701_2 to aflip-flop 1701_n−1 in a flip-flop 1701_i of the i-th stage (any one ofthe flip-flops 1701_1 to 1701_n) are connected to a flip-flop 1701_i−1of the (i−1)th stage and a flip-flop 1701_i+1 of the (i+1)th stage, anda connection point of the flip-flop 1701_i of the i-th stage and theflip-flop 1701_i+1 of the (i+1)th stage is connected to the wiring 622_i(any one of the wirings 622_1 to 622_n). Note that the flip-flop 1701_1of the first stage is connected to the sixth wiring 616 and theflip-flop 1701_2 of the second stage, and a connection point of theflip-flop 1701_1 of the first stage and the flip-flop 1701_2 of thesecond stage is connected to the wiring 622_1. Note also that theflip-flop 1701_n of the n-th stage is connected to a flip-flop 1701_n−1of the (n−1)th stage and the wiring 622_n.

Note that in the flip-flop 1701 of the (1+3N)th stage, the first wiring611, the second wiring 612, the third wiring 613, the fourth wiring 614,and the fifth wiring 615 are connected to the first wiring 111, thesecond wiring 112, the third wiring 113, the fourth wiring 114, and theseventh wiring 1317 shown in FIG. 13, respectively. In the flip-flop1701 of the (2+3N)th stage, the first wiring 611, the second wiring 612,the fourth wiring 614, the fifth wiring 615, and the third wiring 613are connected to the first wiring 111, the second wiring 112, the thirdwiring 113, the fourth wiring 114, and the seventh wiring 1317 shown inFIG. 13, respectively. In the flip-flop 1701 of the (3+3N)th stage, thefirst wiring 611, the second wiring 612, the fifth wiring 615, the thirdwiring 613, and the fourth wiring 614 are connected to the first wiring111, the second wiring 112, the third wiring 113, the fourth wiring 114,and the seventh wiring 1317 shown in FIG. 13, respectively. In addition,for example, in the flip-flop 1701_i of the i-th stage, the fifth wiring115 and the sixth wiring 116 shown in FIG. 13 of each of the flip-flop1701_2 to the flip-flop 1701_n−1 are connected to the sixth wiring 116shown in FIG. 13 of the flip-flop 1701_i−1 of the (i−1)th stage and thefifth wiring 115 shown in FIG. 13 of the flip-flop 1701_i+1 of the(i+1)th stage, respectively. Note also that the fifth wiring 115 and thesixth wiring 116 shown in FIG. 13 of the flip-flop 1701_1 of the firststage are connected to the sixth wiring 616 shown in FIG. 17 and thefifth wiring 115 shown in FIG. 13 of the flip-flop 1701_2 of the secondstage, respectively. Note also that the fifth wiring 115 and the sixthwiring 116 shown in FIG. 13 of the flip-flop 1701_n of the n-th stageare connected to the sixth wiring 116 shown in FIG. 13 of the flip-flop1701_n−1 of the (n−1)th stage and the wiring 622_n shown in FIG. 17.

Note that the shift register shown in FIG. 17 can perform operationswhich are similar to those of the shift register shown in FIG. 6.Therefore, the timing chart in FIG. 7 can be used for the shift registershown in FIG. 17.

Therefore, since clock signals having three phases can be used in theshift register in FIG. 17 similarly to Embodiment Mode 1, power can besaved. In addition, since the number of stages of the flip-flop 1701connected to each clock signal line (each of the third wiring 613, thefourth wiring 614, and the fifth wiring 615) is reduced to two-thirdthat of the case of using single-phase clock signals in each of theshift registers of this embodiment mode, a load of each clock signalline can be reduced.

Note that in the shift register in FIG. 17, an output signal of theflip-flop 1701 of each stage may be output to the wiring 622 of eachstage through a buffer and FIG. 18 shows such a structure. Since theflip-flop 1701 of each stage is connected to the wiring 622 of eachstage through a buffer 1801 in a shift register in FIG. 18, a widemargin at the time of operation can be obtained. This is becauseoperations of the shift register are not adversely affected even when alarge load is connected to the wiring 622 and delay or waveform dullnessoccurs in a signal of the wiring 622. Note that a logic circuit such asan inverter, a NAND, or a NOR, an operational amplifier or the like, ora circuit in which these are combined can be used as the buffer 1801.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Mode 1.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 3

In this embodiment mode, a flip-flop having a structure which isdifferent from those of Embodiment Modes 1 and 2 is shown in FIG. 19.Note that portions which are similar to Embodiment Modes 1 and 2 aredenoted by common reference numerals and detailed description of theportions which are the same and portions which have similar functions isomitted.

The flip-flop shown in FIG. 19 includes the first transistor 101, thesecond transistor 102, the third transistor 103, the fourth transistor104, the fifth transistor 1305, a sixth transistor 1906, a seventhtransistor 1907, an eighth transistor 1908, and a ninth transistor 1909.Note that the flip-flop is connected to the first wiring 111, the secondwiring 112, the third wiring 113, the fourth wiring 114, the fifthwiring 115, the sixth wiring 116, and the seventh wiring 1317. In thisembodiment mode, each of the sixth transistor 1906, the seventhtransistor 1907, the eighth transistor 1908, and the ninth transistor1909 is an N-channel transistor and is turned on when gate-sourcevoltage (Vgs) exceeds the threshold voltage (Vth).

The first terminal (one of the source terminal and the drain terminal)of the first transistor 101 is connected to the first wiring 111; thesecond terminal (the other thereof) of the first transistor 101 isconnected to the gate terminal of the second transistor 102; and thegate terminal of the first transistor 101 is connected to the fifthwiring 115. The first terminal of the third transistor 103 is connectedto the gate terminal of the second transistor 102; the second terminalof the third transistor 103 is connected to the second wiring 112; andthe gate terminal of the third transistor 103 is connected to the fourthwiring 114. The first terminal of the second transistor 102 is connectedto the third wiring 113 and the second terminal of the second transistor102 is connected to the sixth wiring 116. The first terminal of thefourth transistor 104 is connected to the sixth wiring 116; the secondterminal of the fourth transistor 104 is connected to the second wiring112; and the gate terminal of the fourth transistor 104 is connected tothe fourth wiring 114. The first terminal of the fifth transistor 1305is connected to the sixth wiring 116; the second terminal of the fifthtransistor 1305 is connected to the second wiring 112; and the gateterminal of the fifth transistor 1305 is connected to the seventh wiring1317. A first terminal of the sixth transistor 1906 is connected to agate terminal of the eighth transistor 1908; a second terminal of thesixth transistor 1906 is connected to the second wiring 112; and a gateterminal of the sixth transistor 1906 is connected to the gate terminalof the second transistor 102. A first terminal of the seventh transistor1907 is connected to the first wiring 111; a second terminal of theseventh transistor 1907 is connected to the gate terminal of the eighthtransistor 1908; and a gate terminal of the seventh transistor 1907 isconnected to the first wiring 111. A first terminal of the eighthtransistor 1908 is connected to the third wiring 113 and a secondterminal of the eighth transistor 1908 is connected to a gate terminalof the ninth transistor 1909. A first terminal of the ninth transistor1909 is connected to the sixth wiring 116 and a second terminal of theninth transistor 1909 is connected to the second wiring 112. Note that aconnection point of the first terminal of the sixth transistor 1906, thesecond terminal of the seventh transistor 1907, and the gate terminal ofthe eighth transistor 1908 is denoted by a node 1922. In addition, aconnection point of the second terminal of the eighth transistor 1908and the gate terminal of the ninth transistor 1909 is denoted by a node1923.

Note that the second terminal of the third transistor 103, the secondterminal of the fourth transistor 104, the second terminal of the fifthtransistor 1305, the second terminal of the sixth transistor 1906, andthe second terminal of the ninth transistor 1909 are not necessarilyconnected to the second wiring 112 and may be connected to differentwirings. In addition, the gate terminal of the third transistor 103 andthe gate terminal of the fourth transistor 104 are not necessarilyconnected to the fourth wiring 114 and may be connected to differentwirings. Further, the first terminal of the first transistor 101, thefirst terminal of the seventh transistor 1907, and the gate terminal ofthe seventh transistor 1907 are not necessarily connected to the firstwiring 111 and may be connected to different wirings. Furthermore, thefirst terminal of the second transistor 102 and the first terminal ofthe eighth transistor 1908 are not necessarily connected to the thirdwiring 113 and may be connected to different wirings.

Next, operations of the flip-flop shown in FIG. 19 are described withreference to a timing chart shown in FIG. 20. Note that FIG. 20 is atiming chart in the case where the flip-flop in FIG. 19 is operatedsimilarly to the flip-flops shown in FIGS. 1 and 13. Note that portionswhich are common to those in the timing charts in FIGS. 2 and 14 aredenoted by common reference numerals and description thereof is omitted.

In FIG. 20, a potential 2022 is a potential of the node 1922 in FIG. 19and a potential 2023 is a potential of the node 1923 in FIG. 19.

In the flip-flop in FIG. 19, the ninth transistor 1909 is turned on in athird non-selection period. In addition, the sixth wiring 116 remains atan L level because a potential of the second wiring 112 is supplied tothe sixth wiring 116 through the ninth transistor 1909.

Control of on/off of the ninth transistor 1909 is specificallydescribed. First, the sixth transistor 1906 and the seventh transistor1907 form an inverter, and the potential of the node 1922 (the potential2022) becomes approximately V2 when an H-level signal is input to thegate terminal of the sixth transistor 1906. Note that since thepotential 2022 at this time is determined by a resistance ratio of thesixth transistor 1906 to the seventh transistor 1907, the potential 2022becomes a value which is slightly higher than V2. In addition, since thepotential of the node 1922 becomes a value obtained by subtracting thethreshold voltage of the seventh transistor 1907 (Vth1907) from thepotential of the first wiring 111 when an L-level signal is input to thegate terminal of the sixth transistor 1906, the potential of the node1922 becomes V1−Vth1907. Therefore, since the node 121 is at an L leveland the node 1922 becomes an H level in the first non-selection period,the second non-selection period, and the third non-selection period, theeighth transistor 1908 is turned on. Thus, since the ninth transistor1909 is controlled by a signal which is input to the third wiring 113,the ninth transistor 1909 is turned on in the third non-selection periodand is turned off in the first non-selection period and the secondnon-selection period. On the other hand, since the node 121 is at an Hlevel and the node 1922 becomes an L level in the set period and theselection period, the eighth transistor 1908 is turned off. Thus, sincea potential of the gate terminal of the ninth transistor 1909 remains ata potential of the first non-selection period which is a period previousto the set period, namely, an L level, the ninth transistor 1909 isturned off.

As described above, in the flip-flop in FIG. 19, V2 is supplied to thesixth wiring 116 in the first non-selection period, the secondnon-selection period, and the third non-selection period. Therefore, amalfunction of the flip-flop can be further suppressed. This is becauseV2 can be supplied to the sixth wiring 116 in the non-selection period.In addition, since V2 is supplied to the sixth wiring 116 in thenon-selection period in the flip-flop in FIG. 19, noise of the sixthwiring 116 can be reduced.

In addition, deterioration in characteristics of the sixth transistor1906, the seventh transistor 1907, the eighth transistor 1908, and theninth transistor 1909 can be suppressed in the flip-flop in FIG. 19.This is because the sixth transistor 1906 is turned on only in the setperiod and the selection period; the seventh transistor 1907 is turnedon only in a period in which the potential of the node 1922 rises toV1−Vth1907 in the first non-selection period which is after theselection period; the eighth transistor 1908 is turned on only in aperiod in which the potential of the node 1923 rises to V1−β (βcorresponds to Vth1907+Vth1908) of the first non-selection period, thesecond non-selection period, and the third non-selection period; and theninth transistor 1909 is turned on only in the third non-selectionperiod.

Note that in the flip-flop in FIG. 19, the first transistor 101, thesecond transistor 102, the third transistor 103, the fourth transistor104, the fifth transistor 1305, the sixth transistor 1906, the seventhtransistor 1907, the eighth transistor 1908, and the ninth transistor1909 are all N-channel transistors. Therefore, since amorphous siliconcan be used for a semiconductor layer of each transistor in theflip-flop in FIG. 19, a manufacturing process can be simplified, andthus manufacturing cost can be reduced and a yield can be improved. Inaddition, a semiconductor device such as a large display panel can alsobe manufactured. Further, even when polysilicon or single crystalsilicon is used for the semiconductor layer of each transistor, themanufacturing process can be simplified.

Further, since deterioration in characteristics of each transistor canbe suppressed even when amorphous silicon in which characteristicseasily deteriorate (the threshold voltage is easily shifted) is used forthe semiconductor layer of each transistor in the flip-flop in FIG. 19,a semiconductor device such as a long-life display panel can bemanufactured.

Here, functions of the sixth transistor 1906, the seventh transistor1907, the eighth transistor 1908, and the ninth transistor 1909 aredescribed. The sixth transistor 1906 has a function of selecting timingfor supplying the potential of the second wiring 112 to the node 1922and functions as a switching transistor. The seventh transistor 1907 hasa function of selecting timing for supplying the potential of the firstwiring 111 to the node 1922 and functions as a diode. The eighthtransistor 1908 has a function of selecting timing for supplying thepotential of the third wiring 113 to the node 1923 and functions as aswitching transistor. The ninth transistor 1909 has a function ofselecting timing for supplying the potential of the second wiring 112 tothe sixth wiring 116 and functions as a switching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 19 as long as operations which are similarto those of FIG. 19 are performed. Thus, a transistor, another element(e.g., a resistor or a capacitor), a diode, a switch, any logic circuit,or the like may be additionally provided.

For example, as shown in FIG. 21, a capacitor 2101 may be providedbetween the gate terminal and the second terminal of the secondtransistor 102 shown in FIG. 19. By proving the capacitor 2101, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 102 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 2101, a gate insulating film may be used as an insulatinglayer and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.19 are denoted by common reference numerals and description thereof isomitted.

Operations which are similar to those of FIG. 19 can also be performedin a flip-flop in FIG. 22. As shown in FIG. 22, the first transistor 101shown in FIG. 19 may be diode-connected. The first transistor 101 isdiode-connected, so that current flowing through the first wiring 111 ismade small. Thus, the wiring width of the first wiring 111 can be madesmall. Note that portions which are common to those in FIG. 19 aredenoted by common reference numerals and description thereof is omitted.

In addition, each of the flip-flops shown in this embodiment mode can beapplied to each of the shift registers in FIGS. 17 and 18. Since clocksignals having three phases can be used similarly to Embodiment Modes 1and 2, power can be saved. Further, since the number of stages of theflip-flop 1701 connected to each clock signal line (each of the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615) is reducedto two-third that of the case of using single-phase clock signals ineach of the shift registers of this embodiment mode, a load of eachclock signal line can be reduced.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Modes 1 and 2.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 4

In this embodiment mode, a flip-flop having a structure which isdifferent from those of Embodiment Modes 1 to 3 is shown in FIG. 23.Note that portions which are similar to Embodiment Modes 1 to 3 aredenoted by common reference numerals and detailed description of theportions which are the same and portions which have similar functions isomitted.

The flip-flop shown in FIG. 23 includes the first transistor 101, thesecond transistor 102, the third transistor 103, the fourth transistor104, the fifth transistor 1305, the sixth transistor 1906, the seventhtransistor 1907, the eighth transistor 1908, the ninth transistor 1909,a tenth transistor 2310, an eleventh transistor 2311, and a twelfthtransistor 2312. Note that the flip-flop is connected to the firstwiring 111, the second wiring 112, the third wiring 113, the fourthwiring 114, the fifth wiring 115, the sixth wiring 116, and the seventhwiring 1317. In this embodiment mode, each of the tenth transistor 2310,the eleventh transistor 2311, and the twelfth transistor 2312 is anN-channel transistor and is turned on when gate-source voltage (Vgs)exceeds the threshold voltage (Vth).

The first terminal (one of the source terminal and the drain terminal)of the first transistor 101 is connected to the first wiring 111; thesecond terminal (the other thereof) of the first transistor 101 isconnected to the gate terminal of the second transistor 102; and thegate terminal of the first transistor 101 is connected to the fifthwiring 115. The first terminal of the third transistor 103 is connectedto the second wiring 112; the second terminal of the third transistor103 is connected to the gate terminal of the second transistor 102; andthe gate terminal of the third transistor 103 is connected to the fourthwiring 114. The first terminal of the second transistor 102 is connectedto the third wiring 113 and the second terminal of the second transistor102 is connected to the sixth wiring 116. The first terminal of thefourth transistor 104 is connected to the second wiring 112; the secondterminal of the fourth transistor 104 is connected to the sixth wiring116; and the gate terminal of the fourth transistor 104 is connected tothe fourth wiring 114. The first terminal of the fifth transistor 1305is connected to the second wiring 112; the second terminal of the fifthtransistor 1305 is connected to the sixth wiring 116; and the gateterminal of the fifth transistor 1305 is connected to the seventh wiring1317. The first terminal of the sixth transistor 1906 is connected tothe second wiring 112; the second terminal of the sixth transistor 1906is connected to the gate terminal of the eighth transistor 1908 and agate terminal of the eleventh transistor 2311; and the gate terminal ofthe sixth transistor 1906 is connected to the gate terminal of thesecond transistor 102. The first terminal of the seventh transistor 1907is connected to the first wiring 111; the second terminal of the seventhtransistor 1907 is connected to the gate terminal of the eighthtransistor 1908 and the gate terminal of the eleventh transistor 2311;and the gate terminal of the seventh transistor 1907 is connected to thefirst wiring 111. The first terminal of the eighth transistor 1908 isconnected to the third wiring 113 and the second terminal of the eighthtransistor 1908 is connected to the gate terminal of the ninthtransistor 1909 and a gate terminal of the tenth transistor 2310. Thefirst terminal of the ninth transistor 1909 is connected to the secondwiring 112 and the second terminal of the ninth transistor 1909 isconnected to the sixth wiring 116. A first terminal of the tenthtransistor 2310 is connected to the second wiring 112 and a secondterminal of the tenth transistor 2310 is connected to the gate terminalof the second transistor 102. A first terminal of the eleventhtransistor 2311 is connected to the seventh wiring 1317 and a secondterminal of the eleventh transistor 2311 is connected to a gate terminalof the twelfth transistor 2312. A first terminal of the twelfthtransistor 2312 is connected to the second wiring 112 and a secondterminal of the twelfth transistor 2312 is connected to the gateterminal of the second transistor 102. Note that a connection point ofthe second terminal of the eleventh transistor 2311 and the gateterminal of the twelfth transistor 2312 is denoted by a node 2324.

Note that the first terminal of the third transistor 103, the firstterminal of the fourth transistor 104, the first terminal of the fifthtransistor 1305, the first terminal of the sixth transistor 1906, thefirst terminal of the ninth transistor 1909, the first terminal of thetenth transistor 2310, and the first terminal of the twelfth transistor2312 are not necessarily connected to the second wiring 112 and may beconnected to different wirings. In addition, the gate terminal of thethird transistor 103 and the gate terminal of the fourth transistor 104are not necessarily connected to the fourth wiring 114 and may beconnected to different wirings. Further, the first terminal of the firsttransistor 101, the first terminal of the seventh transistor 1907, andthe gate terminal of the seventh transistor 1907 are not necessarilyconnected to the first wiring 111 and may be connected to differentwirings. Furthermore, the first terminal of the second transistor 102and the first terminal of the eighth transistor 1908 are not necessarilyconnected to the third wiring 113 and may be connected to differentwirings. Moreover, the gate terminal of the fifth transistor 1305 andthe first terminal of the eleventh transistor 2311 are not necessarilyconnected to the seventh wiring 1317 and may be connected to differentwirings.

Next, operations of the flip-flop shown in FIG. 23 are described withreference to a timing chart shown in FIG. 24. Note that FIG. 24 is atiming chart in the case where the flip-flop in FIG. 23 is operatedsimilarly to the flip-flops shown in FIGS. 1, 13, and 19. Note thatportions which are common to those in FIGS. 2, 14, and 20 are denoted bycommon reference numerals and description thereof is omitted.

In FIG. 24, a potential 2424 is a potential of the node 2324 in FIG. 23.

In the flip-flop in FIG. 23, the tenth transistor 2310 is turned on in athird non-selection period. In addition, the node 121 can be more stablykept at an L level because a potential of the second wiring 112 issupplied to the node 121 through the tenth transistor 2310. Further, inthe flip-flop in FIG. 23, the twelfth transistor 2312 is turned on in afirst non-selection period. Furthermore, the node 121 can be more stablykept at an L level because the potential of the second wiring 112 issupplied to the node 121 through the twelfth transistor 2312.

Control of on/off of the twelfth transistor 2312 is specificallydescribed. Note that control of on/off of the tenth transistor 2310 issimilar to control of on/off of the ninth transistor 1909, which isdescribed in Embodiment Mode 3. First, the sixth transistor 1906 and theseventh transistor 1907 form an inverter, similarly to the flip-flop inFIG. 19. Therefore, since the node 121 is at an L level and the node1922 becomes an H level in the first non-selection period, the secondnon-selection period, and the third non-selection period, the eleventhtransistor 2311 is turned on. Thus, since the twelfth transistor 2312 iscontrolled by a signal which is input to the seventh wiring 1317, thetwelfth transistor 2312 is turned on in the second non-selection periodand is turned off in the first non-selection period and the thirdnon-selection period. On the other hand, since the node 121 is at an Hlevel and the node 1922 gets in an L level in the set period and theselection period, the eleventh transistor 2311 is turned off. Thus,since a potential of the gate terminal of the twelfth transistor 2312remains at a potential of the first non-selection period which is aperiod previous to the set period, namely, an L level, the twelfthtransistor 2312 is turned off.

As described above, in the flip-flop in FIG. 23, V2 is supplied to eachof the sixth wiring 116 and the node 121 in the first non-selectionperiod, the second non-selection period, and the third non-selectionperiod. Therefore, a malfunction of the flip-flop can be furthersuppressed. This is because V2 can be supplied to each of the sixthwiring 116 and the node 121 in the non-selection period. In addition,since V2 is supplied to each of the sixth wiring 116 and the node 121 inthe non-selection period in the flip-flop in FIG. 23, noise of the sixthwiring 116 and the node 121 can be reduced.

In addition, deterioration in characteristics of the tenth transistor2310, the eleventh transistor 2311, and the twelfth transistor 2312 canbe suppressed in the flip-flop in FIG. 23. This is because the tenthtransistor 2310 is turned on only in the third non-selection period; theeleventh transistor 2311 is turned on only in a period in which thepotential of the node 2324 rises to V1−γ (γ corresponds toVth1907+Vth2311) of the first non-selection period, the secondnon-selection period, and the third non-selection period; and thetwelfth transistor 2312 is turned on only in the second non-selectionperiod.

Note that in the flip-flop in FIG. 23, the first transistor 101, thesecond transistor 102, the third transistor 103, the fourth transistor104, the fifth transistor 1305, the sixth transistor 1906, the seventhtransistor 1907, the eighth transistor 1908, the ninth transistor 1909,the tenth transistor 2310, the eleventh transistor 2311, and the twelfthtransistor 2312 are all N-channel transistors. Therefore, sinceamorphous silicon can be used for a semiconductor layer of eachtransistor in the flip-flop in FIG. 23, a manufacturing process can besimplified, and thus manufacturing cost can be reduced and a yield canbe improved. In addition, a semiconductor device such as a large displaypanel can also be manufactured. Further, even when polysilicon or singlecrystal silicon is used for the semiconductor layer of each transistor,the manufacturing process can be simplified.

Further, since deterioration in characteristics of each transistor canbe suppressed even when amorphous silicon in which characteristicseasily deteriorate (the threshold voltage is easily shifted) is used forthe semiconductor layer of each transistor in the flip-flop in FIG. 23,a semiconductor device such as a long-life display panel can bemanufactured.

Here, functions of the tenth transistor 2310, the eleventh transistor2311, and the twelfth transistor 2312 are described. The tenthtransistor 2310 has a function of selecting timing for supplying thepotential of the second wiring 112 to the node 121 and functions as aswitching transistor. The eleventh transistor 2311 has a function ofselecting timing for supplying a potential of the seventh wiring 1317 tothe node 2324 and functions as a switching transistor. The twelfthtransistor 2312 has a function of selecting timing for supplying thepotential of the second wiring 112 to the node 121 and functions as aswitching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 23 as long as operations which are similarto those of FIG. 23 are performed. Thus, a transistor, another element(e.g., a resistor or a capacitor), a diode, a switch, any logic circuit,or the like may be additionally provided.

For example, as shown in FIG. 25, a capacitor 2501 may be providedbetween the gate terminal and the second terminal of the secondtransistor 102 shown in FIG. 23. By proving the capacitor 2501, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 102 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 2501, a gate insulating film may be used as an insulatinglayer and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.23 are denoted by common reference numerals and description thereof isomitted.

Operations which are similar to those of FIG. 23 can also be performedin a flip-flop in FIG. 26. As shown in FIG. 26, the first transistor 101shown in FIG. 23 may be diode-connected. The first transistor 101 isdiode-connected, so that current flowing through the first wiring 111 ismade small. Thus, the wiring width of the first wiring 111 can be madesmall.

In addition, each of the flip-flops shown in this embodiment mode can beapplied to each of the shift registers in FIGS. 17 and 18. Since clocksignals having three phases can be used similarly to Embodiment Modes 1to 3, power can be saved. Further, since the number of stages of theflip-flops 1701 connected to each clock signal line (each of the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615) is reducedto two-third that of the case of using single-phase clock signals ineach of the shift registers of this embodiment mode, a load of eachclock signal line can be reduced.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Modes 1 to 3.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 5

In this embodiment mode, the case is described in which a P-channeltransistor is employed as a transistor included in a flip-flop withreference to FIG. 27. Note that a flip-flop formed by using a P-channeltransistor has a basic structure which is similar to that of a flip-flopformed by using an N-channel transistor. Note that a power supplypotential, and H level and L level of a signal, are inverted.

FIG. 27 shows a flip-flop of one stage (e.g., a first stage) that is oneof a plurality of flip-flops included in a shift register. The flip-flopshown in FIG. 27 includes a first transistor 2701, a second transistor2702, a third transistor 2703, and a fourth transistor 2704. Note thatthe flip-flop is connected to a first wiring 2711, a second wiring 2712,a third wiring 2713, a fourth wiring 2714, a fifth wiring 2715, and asixth wiring 2716. In this embodiment mode, each of the first transistor2701, the second transistor 2702, the third transistor 2703, and thefourth transistor 2704 is a P-channel transistor and is turned on whenthe absolute value of gate-source voltage (|Vgs|) exceeds the thresholdvoltage (|Vth|) (when Vgs becomes lower than Vth). Note that the firstwiring 2711 and the second wiring 2712 may be called a first powersupply line and a second power supply line, respectively. In addition,the third wiring 2713 and the fourth wiring 2714 may be called a firstsignal line and a second signal line, respectively.

Note that the first transistor 2701, the second transistor 2702, thethird transistor 2703, and the fourth transistor 2704 correspond to thefirst transistor 101, the second transistor 102, the third transistor103, and the fourth transistor 104 in FIG. 1, respectively. In addition,the first wiring 2711, the second wiring 2712, the third wiring 2713,the fourth wiring 2714, the fifth wiring 2715, and the sixth wiring 2716correspond to the first wiring 111, the second wiring 112, the thirdwiring 113, the fourth wiring 114, the fifth wiring 115, and the sixthwiring 116 in FIG. 1, respectively.

A first terminal (one of a source terminal and a drain terminal) of thefirst transistor 2701 is connected to the first wiring 2711; a secondterminal (the other thereof) of the first transistor 2701 is connectedto a gate terminal of the second transistor 2702; and a gate terminal ofthe first transistor 2701 is connected to the fifth wiring 2715. A firstterminal of the third transistor 2703 is connected to the second wiring2712; a second terminal of the third transistor 2703 is connected to thegate terminal of the second transistor 2702; and a gate terminal of thethird transistor 2703 is connected to the fourth wiring 2714. A firstterminal of the second transistor 2702 is connected to the third wiring2713 and a second terminal of the second transistor 2702 is connected tothe sixth wiring 2716. A first terminal of the fourth transistor 2704 isconnected to the second wiring 2712; a second terminal of the fourthtransistor 2704 is connected to the sixth wiring 2716; and a gateterminal of the fourth transistor 2704 is connected to the fourth wiring2714. Note that a connection point of the second terminal of the firsttransistor 2701, the gate terminal of the second transistor 2702, andthe second terminal of the third transistor 2703 is denoted by a node2721.

Note that the second terminal of the third transistor 2703 and thesecond terminal of the fourth transistor 2704 are not necessarilyconnected to the second wiring 2712 and may be connected to differentwirings. In addition, the gate terminal of the third transistor 2703 andthe gate terminal of the fourth transistor 2704 are not necessarilyconnected to the fourth wiring 2714 and may be connected to differentwirings.

Next, operations of the flip-flop shown in FIG. 27 are described withreference to a timing chart shown in FIG. 28, and FIGS. 29A to 29E. Notethat a set period, a selection period, and a non-selection period inFIG. 28 are described. Note also that the non-selection period isdivided into a first non-selection period, a second non-selectionperiod, and a third non-selection period, and the first non-selectionperiod, the second non-selection period, and the third non-selectionperiod are sequentially repeated.

Note that a potential of V2 is supplied to the first wiring 2711 and apotential of V1 is supplied to the second wiring 2712. Note also thatV1>V2 is satisfied.

Note also that the potential of V2 is not necessarily supplied to thefirst wiring 2711. Another potential may be supplied to the first wiring2711, or a digital signal or an analog signal may be input to the firstwiring 2711. Further, the potential of V1 is not necessarily supplied tothe second wiring 2712. Another potential may be supplied to the secondwiring 2712, or a digital signal or an analog signal may be input to thesecond wiring 2712.

Note that a signal is input to each of the third wiring 2713, the fourthwiring 2714, and the fifth wiring 2715. The signal input to the thirdwiring 2713 is a first clock signal; the signal input to the fourthwiring 2714 is a second clock signal; and the signal input to the fifthwiring 2715 is a start signal. In addition, the signal input to each ofthe third wiring 2713, the fourth wiring 2714, and the fifth wiring 2715is a digital signal in which a potential of an H-level signal is at V1(hereinafter also referred to as an H level) and a potential of anL-level signal is at V2 (hereinafter also referred to as an L level).

Note also that the first clock signal is not necessarily input to thethird wiring 2713. Another signal may be input to the third wiring 2713,or a constant potential or current may be input to the third wiring2713. In addition, the second clock signal is not necessarily input tothe fourth wiring 2714. Another signal may be input to the fourth wiring2714, or a constant potential or current may be input to the fourthwiring 2714. Further, the start signal is not necessarily input to thefifth wiring 2715. Another signal may be input to the fifth wiring 2715,or a constant potential or current may be input to the fifth wiring2715.

Further, the potential of the H-level signal of the signal input to eachof the third wiring 2713, the fourth wiring 2714, and the fifth wiring2715 is not limited to V1 and the potential of the L-level signalthereof is not limited to V2. The potentials are not particularlylimited as long as the potential of the H-level signal is higher thanthe potential of the L-level signal.

Note that a signal is output from the sixth wiring 2716. The signaloutput from the sixth wiring 2716 is an output signal of the flip-flopand is also a start signal of the flip-flop of the next stage. Inaddition, the signal output from the sixth wiring 2716 is input to thefifth wiring 2715 of the flip-flop of the next stage. Further, thesignal output from the sixth wiring 2716 is a digital signal in which apotential of an H-level signal is at V1 (hereinafter also referred to asan H level) and a potential of an L-level signal is at V2 (hereinafteralso referred to as an L level).

In FIG. 28, a signal 2813 is a signal input to the third wiring 2713; asignal 2814 is a signal input to the fourth wiring 2714; a signal 2815is a signal input to the fifth wiring 2815; and a signal 2816 is asignal output from the sixth wiring 2716. In addition, a potential 2821is a potential of the node 2721 in FIG. 27.

First, in the set period shown in period A of FIG. 28 and FIG. 29A, thesignal 2813 and the signal 2814 are at an H level and the signal 2815becomes an L level. Therefore, the third transistor 2703 and the fourthtransistor 2704 are turned off and the first transistor 2701 is turnedon. At this time, the second terminal of the first transistor 2701corresponds to the source terminal and the potential of the node 2721(the potential 2821) becomes V2+|Vth2701| because it becomes the sum ofa potential of the fifth wiring 2715 and the absolute value of thethreshold voltage of the first transistor 2701. Thus, the secondtransistor 2702 is turned on and a potential of the sixth wiring 2716becomes V1 because it becomes equal to a potential of the third wiring2713. In this manner, in the set period, an H level is output from thesixth wiring 2716 while keeping the second transistor 2702 on in theflip-flop.

In the selection period shown in period B of FIG. 28 and FIG. 29B, thesignal 2813 becomes an L level, the signal 2814 remains at an H level,and the signal 2815 becomes an H level. Therefore, the third transistor2703 and the fourth transistor 2704 remain off and the first transistor2701 is turned off. At this time, the second terminal of the secondtransistor 2702 corresponds to the source terminal and the potential ofthe sixth wiring 2716 starts to decrease. Since the node 2721 is in afloating state, the potential of the node 2721 (the potential 2821)decreases at the same time as the potential of the sixth wiring 2716 bycapacitive coupling of parasitic capacitance between the gate terminaland the second terminal of the second transistor 2702 (also referred toas a bootstrap operation). Thus, the gate-source voltage Vgs of thesecond transistor 2702 becomes −|Vth2702|−α (Vth 2702 corresponds to thethreshold voltage of the second transistor 2702 and α corresponds to agiven positive number) and the potential of the sixth wiring 2716becomes an L level (V2). In this manner, in the selection period, an Llevel can be output from the sixth wiring 2716 by setting the potentialof the node 2721 to be V2−|Vth2702|−α in the flip-flop.

In the first non-selection period shown in period C of FIG. 28 and FIG.29C, the signal 2813 becomes an H level, the signal 2814 becomes an Llevel, and the signal 2815 remains an H level. Therefore, the thirdtransistor 2703 and the fourth transistor 2704 are turned on and thefirst transistor 2701 remains off. The node 2721 and the sixth wiring2716 become an H level because a potential of the second wiring 2712 issupplied to the node 2721 and the sixth wiring 2716 through the thirdtransistor 2703 and the fourth transistor 2704, respectively.

In the second non-selection period shown in period D of FIG. 28 and FIG.29D, the signal 2813 remains an H level, the signal 2814 becomes an Hlevel, and the signal 2815 remains an H level. Therefore, the thirdtransistor 2703 and the fourth transistor 2704 are turned off and thefirst transistor 2701 remains off. Thus, the node 2721 and the sixthwiring 2716 remain an H level.

In the third non-selection period shown in period E of FIG. 28 and FIG.29E, the signal 2813 becomes an L level, and the signal 2814 and thesignal 2815 remain an H level. Therefore, the first transistor 2701, thethird transistor 2703, and the fourth transistor 2704 remain off. Thus,the node 2721 and the sixth wiring 2716 remain an H level.

As described above, since the third transistor 2703 and the fourthtransistor 2704 are turned on only in the first non-selection period inthe flip-flop in FIG. 27, deterioration in characteristics (a thresholdvoltage shift) of the third transistor 2703 and the fourth transistor2704 can be suppressed. Note that in the flip-flop in FIG. 27, since thefirst transistor 2701 is turned on only in the set period and the secondtransistor 2702 is turned on only in the set period and the selectionperiod, deterioration in characteristics of the first transistor 2701and the second transistor 2702 can also be suppressed.

Further, in the flip-flop in FIG. 27, V1 is supplied to each of the node2721 and the sixth wiring 2716 in the first non-selection period in thenon-selection period. Therefore, a malfunction of the flip-flop can besuppressed. This is because V1 is supplied to each of the node 2721 andthe sixth wiring 2716 at regular intervals (in the first non-selectionperiod) in the non-selection period, and thus the potentials of the node2721 and the sixth wiring 2716 can be stabilized at V1.

Note that in the flip-flop in FIG. 27, the first transistor 2701, thesecond transistor 2702, the third transistor 2703, and the fourthtransistor 2704 are all P-channel transistors. Therefore, amanufacturing process can be simplified, and thus manufacturing cost canbe reduced and a yield can be improved in the flip-flop in FIG. 27. Inaddition, even when polysilicon or single crystal silicon is used for asemiconductor layer of each transistor, the manufacturing process can besimplified.

Here, functions of the first transistor 2701, the second transistor2702, the third transistor 2703, and the fourth transistor 2704 aredescribed. The first transistor 2701 has a function of selecting timingfor supplying the potential of the first wiring 2711 and functions as atransistor for input. The second transistor 2702 has a function ofselecting timing for supplying the potential of the third wiring 2713 tothe sixth wiring 2716 and decreasing the potential of the node 2721 bythe bootstrap operation and functions as a transistor for bootstrap. Thethird transistor 2703 has a function of selecting timing for supplyingthe potential of the second wiring 2712 to the node 2721 and functionsas a switching transistor. The fourth transistor 2704 has a function ofsupplying the potential of the second wiring 2712 to the sixth wiring2716 and functions as a switching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 27 as long as operations which are similarto those of FIG. 27 are performed. As is apparent from FIGS. 29A to 29Ewhich show the operations of the flip-flop in FIG. 27, in thisembodiment mode, it is only necessary to have electrical continuity inthe set period, the selection period, the first non-selection period,the second non-selection period, and the third non-selection period, asshown by a solid line in each of FIGS. 29A to 29E. Thus, a transistor,another element (e.g., a resistor or a capacitor), a diode, a switch,any logic circuit, or the like may be additionally provided as long as astructure is employed in which a transistor or the like is provided soas to satisfy the above-described condition and the structure can beoperated.

For example, as shown in FIG. 30, a capacitor 3001 may be providedbetween the gate terminal and the second terminal of the secondtransistor 2702 shown in FIG. 27. By proving the capacitor 3001, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 2702 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 3001, a gate insulating film may be used as an insulatinglayer and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.27 are denoted by common reference numerals and description thereof isomitted.

Note that the capacitor 3001 corresponds to the capacitor 401 in FIG. 4.

Operations which are similar to those of FIG. 27 can also be performedin a flip-flop in FIG. 31. As shown in FIG. 31, the first transistor2701 shown in FIG. 27 may be diode-connected. The first transistor 2701is diode-connected, so that the first wiring 2711 is not necessary.Thus, one wiring and one power source potential (V2) can be eliminatedfrom the structure. Note that portions which are common to those in FIG.27 are denoted by common reference numerals and description thereof isomitted.

In addition, each of the flip-flops shown in this embodiment mode can beapplied to each of the shift registers in FIGS. 6 and 8. Sincethree-phase clock signals can be used similarly to Embodiment Modes 1 to4, power can be saved. Further, since the number of stages of theflip-flop 601 connected to each clock signal line (each of the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615) is reducedto two-third compared with the case of using single-phase clock signalsin each of the shift registers of this embodiment mode, a load of eachclock signal line can be reduced. Note that in each of a potentialsupplied to each of the first wiring 611 and the second wiring 612, asignal input to each of the third wiring 613, the fourth wiring 614, thefifth wiring 615, and the sixth wiring 616, and a signal output to thewiring 622, an H level and an L level are inverted compared with thecase where the flip-flop formed by using the N-channel transistor isapplied to each of the shift registers in FIGS. 6 and 8.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Modes 1 to 4.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 6

In this embodiment mode, a flip-flop formed by using a P-channeltransistor having a structure which is different from that of EmbodimentMode 5 is shown in FIG. 32. Note that portions which are similar toEmbodiment Mode 5 are denoted by common reference numerals and detaileddescription of the portions which are the same and portions which havesimilar functions is omitted.

The flip-flop shown in FIG. 32 includes the first transistor 2701, thesecond transistor 2702, the third transistor 2703, the fourth transistor2704, and a fifth transistor 3205. Note that the flip-flop is connectedto the first wiring 2711, the second wiring 2712, the third wiring 2713,the fourth wiring 2714, the fifth wiring 2715, the sixth wiring 2716,and a seventh wiring 3217. In this embodiment mode, the fifth transistor3205 is a P-channel transistor and is turned on when the absolute valueof gate-source voltage (|Vgs|) exceeds the threshold voltage (|Vth|)(when Vgs becomes lower than Vth). Note that the seventh wiring 3217 maybe called a third signal line.

Note that the fifth transistor 3205 corresponds to the fifth transistor1305 in FIG. 13. In addition, the seventh wiring 3217 corresponds to theseventh wiring 1317 in FIG. 13.

The first terminal (one of the source terminal and the drain terminal)of the first transistor 2701 is connected to the first wiring 2711; thesecond terminal (the other thereof) of the first transistor 2701 isconnected to the gate terminal of the second transistor 2702; and thegate terminal of the first transistor 2701 is connected to the fifthwiring 2715. The first terminal of the third transistor 2703 isconnected to the second wiring 2712; the second terminal of the thirdtransistor 2703 is connected to the gate terminal of the secondtransistor 2702; and the gate terminal of the third transistor 2703 isconnected to the fourth wiring 2714. The first terminal of the secondtransistor 2702 is connected to the third wiring 2713 and the secondterminal of the second transistor 2702 is connected to the sixth wiring2716. The first terminal of the fourth transistor 2704 is connected tothe second wiring 2712; the second terminal of the fourth transistor2704 is connected to the sixth wiring 2716; and the gate terminal of thefourth transistor 2704 is connected to the fourth wiring 2714. A firstterminal of the fifth transistor 3205 is connected to the second wiring2712; a second terminal of the fifth transistor 3205 is connected to thesixth wiring 2716; and a gate terminal of the fifth transistor 3205 isconnected to the seventh wiring 3217.

Note that the first terminal of the third transistor 2703, the firstterminal of the fourth transistor 2704, and the first terminal of thefifth transistor 3205 are not necessarily connected to the second wiring2712 and may be connected to different wirings. In addition, the gateterminal of the third transistor 2703 and the gate terminal of thefourth transistor 2704 are not necessarily connected to the fourthwiring 2714 and may be connected to different wirings.

Next, operations of the flip-flop shown in FIG. 32 are described withreference to a timing chart shown in FIG. 33. Note that FIG. 33 is atiming chart in the case where the flip-flop in FIG. 32 is operatedsimilarly to the flip-flop shown in FIG. 27. Note that portions whichare common to those in the timing chart in FIG. 28 are denoted by commonreference numerals and description thereof is omitted.

Note that a signal is input to the seventh wiring 3217. The signal inputto the seventh wiring 3217 is a third clock signal. In addition, thesignal input to the seventh wiring 3217 is a digital signal in which apotential of an H-level signal is at V1 (hereinafter also referred to asan H level) and a potential of an L-level signal is at V2 (hereinafteralso referred to as an L level).

Note also that the third clock signal is not necessarily input to theseventh wiring 3217. Another signal may be input to the seventh wiring3217, or a constant potential or current may be input to the seventhwiring 3217.

In FIG. 33, a signal 3317 is a signal input to the seventh wiring 3217.

In the flip-flop in FIG. 32, the fifth transistor 3205 is turned on in aset period and a second non-selection period. In addition, the sixthwiring 2716 remains an H level because a potential of the second wiring2712 is supplied to the sixth wiring 2716 through the fifth transistor3205.

As described above, in the flip-flop in FIG. 32, V1 is supplied to thesixth wiring 2716 in a first non-selection period and the secondnon-selection period from the first non-selection period, the secondnon-selection period, and a third non-selection period. Therefore, amalfunction of the flip-flop can be further suppressed. This is becauseV1 is supplied to the sixth wiring 2716 at regular intervals (in thefirst non-selection period and the second non-selection period) in thenon-selection period, and thus a potential of the sixth wiring 2716 canbe stabilized at V1.

Further, since the fifth transistor 3205 of the flip-flop in FIG. 32 isturned on only in the set period and the second non-selection period,deterioration in characteristics of the fifth transistor 3205 can besuppressed.

Note that in the flip-flop in FIG. 32, the first transistor 2701, thesecond transistor 2702, the third transistor 2703, the fourth transistor2704, and the fifth transistor 3205 are all P-channel transistors.Therefore, a manufacturing process can be simplified, and thusmanufacturing cost can be reduced and a yield can be improved in theflip-flop in FIG. 32. In addition, even when polysilicon or singlecrystal silicon is used for a semiconductor layer of each transistor,the manufacturing process can be simplified.

Here, a function of the fifth transistor 3205 is described. The fifthtransistor 3205 has a function of selecting timing for supplying thepotential of the second wiring 2712 to the sixth wiring 2716 andfunctions as a switching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 32 as long as operations which are similarto those of FIG. 32 are performed. Thus, a transistor, another element(e.g., a resistor or a capacitor), a diode, a switch, any logic circuit,or the like may be additionally provided.

For example, as shown in FIG. 34, a capacitor 3401 may be providedbetween the gate terminal and the second terminal of the secondtransistor 2702 shown in FIG. 32. By proving the capacitor 3401, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 2702 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 3401, a gate insulating film may be used as an insulatinglayer and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.32 are denoted by common reference numerals and description thereof isomitted.

Note that the capacitor 3401 corresponds to the capacitor 1501 in FIG.15.

Operations which are similar to those of FIG. 32 can also be performedin a flip-flop in FIG. 35. As shown in FIG. 35, the first transistor2701 shown in FIG. 32 may be diode-connected. The first transistor 2701is diode-connected, so that the first wiring 2711 is not necessary.Thus, one wiring and one power source potential (V2) can be eliminatedfrom the structure. Note that portions which are common to those in FIG.32 are denoted by common reference numerals and description thereof isomitted.

In addition, each of the flip-flops shown in this embodiment mode can beapplied to each of the shift registers in FIGS. 17 and 18. Sincethree-phase clock signals can be used similarly to Embodiment Modes 1 to5, power can be saved. Further, since the number of stages of theflip-flop 1701 connected to each clock signal line (each of the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615) is reducedto two-third that of the case of using single-phase clock signals ineach of the shift registers of this embodiment mode, a load of eachclock signal line can be reduced. Note that in each of a potentialsupplied to each of the first wiring 611 and the second wiring 612, asignal input to each of the third wiring 613, the fourth wiring 614, thefifth wiring 615, and the sixth wiring 616, and a signal output to thewiring 622, an H level and an L level are inverted compared with thecase where the flip-flop formed by using the N-channel transistor isapplied to each of the shift registers in FIGS. 17 and 18.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Modes 1 to 5.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 7

In this embodiment mode, a flip-flop having a structure which isdifferent from those of Embodiment Modes 5 and 6 is shown in FIG. 36.Note that portions which are similar to Embodiment Modes 5 and 6 aredenoted by common reference numerals and detailed description of theportions which are the same and portions which have similar functions isomitted.

The flip-flop shown in FIG. 36 includes the first transistor 2701, thesecond transistor 2702, the third transistor 2703, the fourth transistor2704, the fifth transistor 3205, a sixth transistor 3606, a seventhtransistor 3607, an eighth transistor 3608, and a ninth transistor 3609.Note that the flip-flop is connected to the first wiring 2711, thesecond wiring 2712, the third wiring 2713, the fourth wiring 2714, thefifth wiring 2715, the sixth wiring 2716, and the seventh wiring 3217.In this embodiment mode, each of the sixth transistor 3606, the seventhtransistor 3607, the eighth transistor 3608, and the ninth transistor3609 is a P-channel transistor and is turned on when the absolute valueof gate-source voltage (|Vgs|) exceeds the threshold voltage (|Vth|)(when Vgs becomes lower than Vth).

The first terminal (one of the source terminal and the drain terminal)of the first transistor 2701 is connected to the first wiring 2711; thesecond terminal (the other thereof) of the first transistor 2701 isconnected to the gate terminal of the second transistor 2702; and thegate terminal of the first transistor 2701 is connected to the fifthwiring 2715. The first terminal of the third transistor 2703 isconnected to the second wiring 2712; the second terminal of the thirdtransistor 2703 is connected to the gate terminal of the secondtransistor 2702; and the gate terminal of the third transistor 2703 isconnected to the fourth wiring 2714. The first terminal of the secondtransistor 2702 is connected to the third wiring 2713 and the secondterminal of the second transistor 2702 is connected to the sixth wiring2716. The first terminal of the fourth transistor 2704 is connected tothe second wiring 2712; the second terminal of the fourth transistor2704 is connected to the sixth wiring 2716; and the gate terminal of thefourth transistor 2704 is connected to the fourth wiring 2714. The firstterminal of the fifth transistor 3205 is connected to the second wiring2712; the second terminal of the fifth transistor 3205 is connected tothe sixth wiring 2716; and the gate terminal of the fifth transistor3205 is connected to the seventh wiring 3217. A first terminal of thesixth transistor 3606 is connected to the second wiring 2712; a secondterminal of the sixth transistor 3606 is connected to a gate terminal ofthe eighth transistor 3608; and a gate terminal of the sixth transistor3606 is connected to the gate terminal of the second transistor 2702. Afirst terminal of the seventh transistor 3607 is connected to the firstwiring 2711; a second terminal of the seventh transistor 3607 isconnected to the gate terminal of the eighth transistor 3608; and a gateterminal of the seventh transistor 3607 is connected to the first wiring2711. A first terminal of the eighth transistor 3608 is connected to thethird wiring 2713 and a second terminal of the eighth transistor 3608 isconnected to a gate terminal of the ninth transistor 3609. A firstterminal of the ninth transistor 3609 is connected to the second wiring2712 and a second terminal of the ninth transistor 3609 is connected tothe sixth wiring 2716. Note that a connection point of the secondterminal of the sixth transistor 3606, the second terminal of theseventh transistor 3607, and the gate terminal of the eighth transistor3608 is denoted by a node 3622. In addition, a connection point of thesecond terminal of the eighth transistor 3608 and the gate terminal ofthe ninth transistor 3609 is denoted by a node 3623.

Note that the first terminal of the third transistor 2703, the firstterminal of the fourth transistor 2704, the first terminal of the fifthtransistor 3205, the first terminal of the sixth transistor 3606, andthe first terminal of the ninth transistor 3609 are not necessarilyconnected to the second wiring 2712 and may be connected to differentwirings. In addition, the gate terminal of the third transistor 2703 andthe gate terminal of the fourth transistor 2704 are not necessarilyconnected to the fourth wiring 2714 and may be connected to differentwirings. Further, the first terminal of the first transistor 2701, thefirst terminal of the seventh transistor 3607, and the gate terminal ofthe seventh transistor 3607 are not necessarily connected to the firstwiring 2711 and may be connected to different wirings. Furthermore, thefirst terminal of the second transistor 2702 and the first terminal ofthe eighth transistor 3608 are not necessarily connected to the thirdwiring 2713 and may be connected to different wirings.

Next, operations of the flip-flop shown in FIG. 36 are described withreference to a timing chart shown in FIG. 37. Note that FIG. 37 is atiming chart in the case where the flip-flop in FIG. 36 is operatedsimilarly to the flip-flops shown in FIGS. 27 and 32. Note that portionswhich are common to those in the timing charts in FIGS. 28 and 33 aredenoted by common reference numerals and description thereof is omitted.

In FIG. 37, a potential 3722 is a potential of the node 3622 in FIG. 36and a potential 3723 is a potential of the node 3623 in FIG. 36.

In the flip-flop in FIG. 36, the ninth transistor 3609 is turned on in athird non-selection period. In addition, the sixth wiring 2716 remainsan H level because a potential of the second wiring 2712 is supplied tothe sixth wiring 2716 through the ninth transistor 3609.

Control of on/off of the ninth transistor 3609 is specificallydescribed. First, each of the sixth transistor 3606 and the seventhtransistor 3607 forms an inverter, and the potential of the node 3622(the potential 3722) becomes approximately V1 when an L-level signal isinput to the gate terminal of the sixth transistor 3606. Note that sincethe potential 3722 at this time is determined by a resistance ratio ofthe sixth transistor 3606 to the seventh transistor 3607, the potential3722 becomes a value which is slightly lower than V1. In addition, sincethe potential of the node 3622 becomes the sum of a potential of thefirst wiring 2711 and the absolute value of the threshold voltage of theseventh transistor 3607 when an H-level signal is input to the gateterminal of the sixth transistor 3606, the potential of the node 3622becomes V2+|Vth3607|. Therefore, since the node 2721 is at an H leveland the node 3622 becomes an L level in the first non-selection period,the second non-selection period, and the third non-selection period, theeighth transistor 3608 is turned on. Thus, since the ninth transistor3609 is controlled by a signal which is input to the third wiring 2713,the ninth transistor 3609 is turned on in the third non-selection periodand is turned off in the first non-selection period and the secondnon-selection period. On the other hand, since the node 2721 is at an Llevel and the node 3622 becomes an H level in the set period and theselection period, the eighth transistor 3608 is turned off. Thus, sincea potential of the gate terminal of the ninth transistor 3609 remains apotential of the first non-selection period which is a previous periodof the set period, namely, an H level, the ninth transistor 3609 isturned off.

As described above, in the flip-flop in FIG. 36, V1 is supplied to thesixth wiring 2716 in the first non-selection period, the secondnon-selection period, and the third non-selection period. Therefore, amalfunction of the flip-flop can be further suppressed. This is becauseV1 can be supplied to the sixth wiring 2716 in the non-selection period.In addition, since V1 is supplied to the sixth wiring 2716 in thenon-selection period in the flip-flop in FIG. 36, noise of the sixthwiring 2716 can be reduced.

In addition, deterioration in characteristics of the sixth transistor3606, the seventh transistor 3607, the eighth transistor 3608, and theninth transistor 3609 can be suppressed in the flip-flop in FIG. 36.This is because the sixth transistor 3606 is turned on only in the setperiod and the selection period; the seventh transistor 3607 is turnedon only in a period in which the potential of the node 3622 decreases toV2+|Vth3607| in the first non-selection period which is after theselection period; the eighth transistor 3608 is turned on only in aperiod in which the potential of the node 3623 decreases to V2+δ (δcorresponds to |Vth3607|+|Vth3608|) in the first non-selection period,the second non-selection period, and the third non-selection period; andthe ninth transistor 3609 is turned on only in the third non-selectionperiod.

Note that in the flip-flop in FIG. 36, the first transistor 2701, thesecond transistor 2702, the third transistor 2703, the fourth transistor2704, the fifth transistor 3205, the sixth transistor 3606, the seventhtransistor 3607, the eighth transistor 3608, and the ninth transistor3609 are all P-channel transistors. Therefore, even when polysilicon orsingle crystal silicon is used for a semiconductor layer of eachtransistor in the flip-flop in FIG. 36, a manufacturing process can besimplified.

Here, functions of the sixth transistor 3606, the seventh transistor3607, the eighth transistor 3608, and the ninth transistor 3609 aredescribed. The sixth transistor 3606 has a function of selecting timingfor supplying the potential of the second wiring 2712 to the node 3622and functions as a switching transistor. The seventh transistor 3607 hasa function of selecting timing for supplying the potential of the firstwiring 2711 to the node 3622 and functions as a diode. The eighthtransistor 3608 has a function of selecting timing for supplying thepotential of the third wiring 2713 to the node 3623 and functions as aswitching transistor. The ninth transistor 3609 has a function ofselecting timing for supplying the potential of the second wiring 2712to the sixth wiring 2716 and functions as a switching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 36 as long as operations which are similarto those of FIG. 36 are performed. Thus, a transistor, another element(e.g., a resistor or a capacitor), a diode, a switch, any logic circuit,or the like may be additionally provided.

For example, as shown in FIG. 38, a capacitor 3801 may be providedbetween the gate terminal and the second terminal of the secondtransistor 2702 shown in FIG. 36. By proving the capacitor 3801, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 2702 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 3801, a gate insulating film may be used as an insulatinglayer and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.36 are denoted by common reference numerals and description thereof isomitted.

Operations which are similar to those of FIG. 36 can also be performedin a flip-flop in FIG. 39. As shown in FIG. 39, the first transistor2701 shown in FIG. 36 may be diode-connected. The first transistor 2701is diode-connected, so that current flowing through the first wiring2711 is made small. Thus, wiring width of the first wiring 2711 can bemade small. Note that portions which are common to those in FIG. 36 aredenoted by common reference numerals and description thereof is omitted.

In addition, each of the flip-flops shown in this embodiment mode can beapplied to each of the shift registers in FIGS. 17 and 18. Sincethree-phase clock signals can be used similarly to Embodiment Modes 1 to6, power can be saved. Further, since the number of stages of theflip-flop 1701 connected to each clock signal line (each of the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615) is reducedto two-third that of the case of using single-phase clock signals ineach of the shift registers of this embodiment mode, a load of eachclock signal line can be reduced. Note that in each of a potentialsupplied to each of the first wiring 611 and the second wiring 612, asignal input to each of the third wiring 613, the fourth wiring 614, thefifth wiring 615, and the sixth wiring 616, and a signal output to thewiring 622, an H level and an L level are inverted compared with thecase where the flip-flop formed by using the N-channel transistor isapplied to each of the shift registers in FIGS. 17 and 18.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Modes 1 and 6.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 8

In this embodiment mode, a flip-flop having a structure which isdifferent from those of Embodiment Modes 5 to 7 is shown in FIG. 40.Note that portions which are similar to Embodiment Modes 5 to 7 aredenoted by common reference numerals and detailed description of theportions which are the same and portions which have similar functions isomitted.

The flip-flop shown in FIG. 40 includes the first transistor 2701, thesecond transistor 2702, the third transistor 2703, the fourth transistor2704, the fifth transistor 3205, the sixth transistor 3606, the seventhtransistor 3607, the eighth transistor 3608, the ninth transistor 3609,a tenth transistor 4010, an eleventh transistor 4011, and a twelfthtransistor 4012. Note that the flip-flop is connected to the firstwiring 2711, the second wiring 2712, the third wiring 2713, the fourthwiring 2714, the fifth wiring 2715, the sixth wiring 2716, and theseventh wiring 3217. In this embodiment mode, each of the tenthtransistor 4010, the eleventh transistor 4011, and the twelfthtransistor 4012 is a P-channel transistor and is turned on when theabsolute value of gate-source voltage (|Vgs|) exceeds the thresholdvoltage (|Vth|) (when Vgs becomes lower than Vth).

The first terminal (one of the source terminal and the drain terminal)of the first transistor 2701 is connected to the first wiring 2711; thesecond terminal (the other thereof) of the first transistor 2701 isconnected to the gate terminal of the second transistor 2702; and thegate terminal of the first transistor 2701 is connected to the fifthwiring 2715. The first terminal of the third transistor 2703 isconnected to the second wiring 2712; the second terminal of the thirdtransistor 2703 is connected to the gate terminal of the secondtransistor 2702; and the gate terminal of the third transistor 2703 isconnected to the fourth wiring 2714. The first terminal of the secondtransistor 2702 is connected to the third wiring 2713 and the secondterminal of the second transistor 2702 is connected to the sixth wiring2716. The first terminal of the fourth transistor 2704 is connected tothe second wiring 2712; the second terminal of the fourth transistor2704 is connected to the sixth wiring 2716; and the gate terminal of thefourth transistor 2704 is connected to the fourth wiring 2714. The firstterminal of the fifth transistor 3205 is connected to the second wiring2712; the second terminal of the fifth transistor 3205 is connected tothe sixth wiring 2716; and the gate terminal of the fifth transistor3205 is connected to the seventh wiring 3217. The first terminal of thesixth transistor 3606 is connected to the second wiring 2712; the secondterminal of the sixth transistor 3606 is connected to the gate terminalof the eighth transistor 3608 and a gate terminal of the eleventhtransistor 4011; and the gate terminal of the sixth transistor 3606 isconnected to the gate terminal of the second transistor 2702. The firstterminal of the seventh transistor 3607 is connected to the first wiring2711; the second terminal of the seventh transistor 3607 is connected tothe gate terminal of the eighth transistor 3608 and the gate terminal ofthe eleventh transistor 4011; and the gate terminal of the seventhtransistor 3607 is connected to the first wiring 2711. The firstterminal of the eighth transistor 3608 is connected to the third wiring2713 and the second terminal of the eighth transistor 3608 is connectedto the gate terminal of the ninth transistor 3609 and a gate terminal ofthe tenth transistor 4010. The first terminal of the ninth transistor3609 is connected to the second wiring 2712 and the second terminal ofthe ninth transistor 3609 is connected to the sixth wiring 2716. A firstterminal of the tenth transistor 4010 is connected to the second wiring2712 and a second terminal of the tenth transistor 4010 is connected tothe gate terminal of the second transistor 2702. A first terminal of theeleventh transistor 4011 is connected to the seventh wiring 3217 and asecond terminal of the eleventh transistor 4011 is connected to a gateterminal of the twelfth transistor 4012. A first terminal of the twelfthtransistor 4012 is connected to the second wiring 2712 and a secondterminal of the twelfth transistor 4012 is connected to the gateterminal of the second transistor 2702. Note that a connection point ofthe second terminal of the eleventh transistor 4011 and the gateterminal of the twelfth transistor 4012 is denoted by a node 4024.

Note that the second terminal of the third transistor 2703, the secondterminal of the fourth transistor 2704, the second terminal of the fifthtransistor 3205, the second terminal of the sixth transistor 3606, thesecond terminal of the ninth transistor 3609, the second terminal of thetenth transistor 4010, and the second terminal of the twelfth transistor4012 are not necessarily connected to the second wiring 2712 and may beconnected to different wirings. In addition, the gate terminal of thethird transistor 2703 and the gate terminal of the fourth transistor2704 are not necessarily connected to the fourth wiring 2714 and may beconnected to different wirings. Further, the first terminal of the firsttransistor 2701, the first terminal of the seventh transistor 3607, andthe gate terminal of the seventh transistor 3607 are not necessarilyconnected to the first wiring 2711 and may be connected to differentwirings. Furthermore, the first terminal of the second transistor 2702and the first terminal of the eighth transistor 3608 are not necessarilyconnected to the third wiring 2713 and may be connected to differentwirings. Moreover, the gate terminal of the fifth transistor 3205 andthe first terminal of the eleventh transistor 4011 are not necessarilyconnected to the seventh wiring 3217 and may be connected to differentwirings.

Next, operations of the flip-flop shown in FIG. 40 are described withreference to a timing chart shown in FIG. 41. Note that FIG. 41 is atiming chart in the case where the flip-flop in FIG. 40 is operatedsimilarly to the flip-flops shown in FIGS. 27, 32, and 36. Note thatportions which are common to those in the timing charts in FIGS. 28, 33,and 37 are denoted by common reference numerals and description thereofis omitted.

In FIG. 41, a potential 4124 is a potential of the node 4024 in FIG. 40.

In the flip-flop in FIG. 40, the tenth transistor 4010 is turned on in athird non-selection period. In addition, the node 2721 can be morestably kept at an H level because a potential of the second wiring 2712is supplied to the node 2721 through the tenth transistor 4010. Further,in the flip-flop in FIG. 40, the twelfth transistor 4012 is turned on ina first non-selection period. Furthermore, the node 2721 can be morestably kept at an H level because the potential of the second wiring2712 is supplied to the node 2721 through the twelfth transistor 4012.

Control of on/off of the twelfth transistor 4012 is specificallydescribed. Note that control of on/off of the tenth transistor 4010 issimilar to control of on/off of the ninth transistor 3609, which isdescribed in Embodiment Mode 7. First, each of the sixth transistor 3606and the seventh transistor 3607 forms an inverter, similarly to theflip-flop in FIG. 36. Therefore, since the node 2721 is at an H leveland the node 3622 becomes an L level in the first non-selection period,the second non-selection period, and the third non-selection period, theeleventh transistor 4011 is turned on. Thus, since the twelfthtransistor 4012 is controlled by a signal which is input to the seventhwiring 3217, the twelfth transistor 4012 is turned on in the secondnon-selection period and is turned off in the first non-selection periodand the third non-selection period. On the other hand, since the node2721 is at an L level and the node 3622 becomes an H level in the setperiod and the selection period, the eleventh transistor 4011 is turnedoff. Thus, since a potential of the gate terminal of the twelfthtransistor 4012 remains a potential of the first non-selection periodwhich is a period previous to the set period, namely, an H level, thetwelfth transistor 4012 is turned off.

As described above, in the flip-flop in FIG. 40, V1 is supplied to eachof the sixth wiring 2716 and the node 2721 in the first non-selectionperiod, the second non-selection period, and the third non-selectionperiod. Therefore, a malfunction of the flip-flop can be furthersuppressed. This is because V1 can be supplied to each of the sixthwiring 2716 and the node 2721 in the non-selection period. In addition,since V1 is supplied to each of the sixth wiring 2716 and the node 2721in the non-selection period in the flip-flop in FIG. 40, noise of thesixth wiring 2716 and the node 2721 can be reduced.

In addition, deterioration in characteristics of the tenth transistor4010, the eleventh transistor 4011, and the twelfth transistor 4012 canbe suppressed in the flip-flop in FIG. 40. This is because the tenthtransistor 4010 is turned on only in the third non-selection period; theeleventh transistor 4011 is turned on only in a period in which thepotential of the node 4024 decreases to V12+∈ (∈ corresponds to|Vth3607|+|Vth4011|) in the first non-selection period, the secondnon-selection period, and the third non-selection period; and thetwelfth transistor 4012 is turned on only in the second non-selectionperiod.

Note that in the flip-flop in FIG. 40, the first transistor 2701, thesecond transistor 2702, the third transistor 2703, the fourth transistor2704, the fifth transistor 3205, the sixth transistor 3606, the seventhtransistor 3607, the eighth transistor 3608, the ninth transistor 3609,the tenth transistor 4010, the eleventh transistor 4011, and the twelfthtransistor 4012 are all P-channel transistors. Therefore, even whenpolysilicon or single crystal silicon is used for a semiconductor layerof each transistor in the flip-flop in FIG. 40, a manufacturing processcan be simplified.

Here, functions of the tenth transistor 4010, the eleventh transistor4011, and the twelfth transistor 4012 are described. The tenthtransistor 4010 has a function of supplying the potential of the secondwiring 2712 to the node 2721 and functions as a switching transistor.The eleventh transistor 4011 has a function of supplying a potential ofthe seventh wiring 3217 to the node 4024 and functions as a switchingtransistor. The twelfth transistor 4012 has a function of supplying thepotential of the second wiring 2712 to the node 2721 and functions as aswitching transistor.

Note that arrangement, the number, and the like of the transistors arenot limited to those of FIG. 40 as long as operations which are similarto those of FIG. 40 are performed. Thus, a transistor, another element(e.g., a resistor or a capacitor), a diode, a switch, any logic circuit,or the like may be additionally provided.

For example, as shown in FIG. 42, a capacitor 4201 may be providedbetween the gate terminal and the second terminal of the secondtransistor 2702 shown in FIG. 40. By proving the capacitor 4201, thebootstrap operation in the selection period can be performed morestably. In addition, since the parasitic capacitance between the gateterminal and the second terminal of the second transistor 2702 can bereduced, each transistor can be switched at high speed. Note that in thecapacitor 4201, a gate insulating film may be used as an insulatinglayer and a gate electrode layer and a wiring layer may be used asconductive layers; a gate insulating film may be used as the insulatinglayer and a gate electrode layer and a semiconductor layer to which animpurity is added may be used as the conductive layers; or an interlayerfilm (an insulating film) may be used as the insulating layer and awiring layer and a transparent electrode layer may be used as theconductive layers. Note that portions which are common to those in FIG.40 are denoted by common reference numerals and description thereof isomitted.

Operations which are similar to those of FIG. 40 can also be performedin a flip-flop in FIG. 43. As shown in FIG. 43, the first transistor2701 shown in FIG. 40 may be diode-connected. The first transistor 2701is diode-connected, so that current flowing through the first wiring2711 is made small. Thus, the wiring width of the first wiring 2711 canbe made small.

In addition, each of the flip-flops shown in this embodiment mode can beapplied to each of the shift registers in FIGS. 17 and 18. Sincethree-phase clock signals can be used similarly to Embodiment Modes 1 to7, power can be saved. Further, since the number of stages of theflip-flop 1701 connected to each clock signal line (each of the thirdwiring 613, the fourth wiring 614, and the fifth wiring 615) is reducedto two-third that of the case of using single-phase clock signals ineach of the shift registers of this embodiment mode, a load of eachclock signal line can be reduced. Note that in each of a potentialsupplied to each of the first wiring 611 and the second wiring 612, asignal input to each of the third wiring 613, the fourth wiring 614, thefifth wiring 615, and the sixth wiring 616, and a signal output to thewiring 622, an H level and an L level are inverted compared with thecase where the flip-flop formed by using the N-channel transistor isapplied to each of the shift registers in FIGS. 17 and 18.

Further, each of the shift registers shown in this embodiment mode canbe applied to each of the display devices in FIGS. 9, 11, 12, and 44.The life of each of the display devices can be extended by applying thisembodiment mode to a scan line driver circuit formed over the samesubstrate as a pixel portion, similarly to Embodiment Modes 1 to 7.

Note that each of the shift registers and the flip-flops shown in thisembodiment mode can be freely combined with structures of displaydevices shown in other embodiment modes in this specification. Inaddition, the structures of each of the shift registers and theflip-flops shown in this embodiment mode can be freely combined.

Embodiment Mode 9

In this embodiment mode, an example of a pixel included in each of thedisplay devices shown in Embodiment Modes 1 to 8 is described withreference to FIGS. 46A and 46B.

A pixel structure in each of FIGS. 46A and 46B is described. A pixelshown in FIG. 46A includes a transistor 4601, a capacitor 4602, and adisplay element 4621. Note that the pixel is connected to a first wiring4611, a second wiring 4612, and a third wiring 4613. In addition, thecase is described in which a liquid crystal element 4631, lighttransmittivity of which is changed by an electric field between a pixelelectrode 4623 and an opposite electrode 4622 is used for the displayelement 4621 as shown in FIG. 46B. Note that the first wiring 4611 maybe called a signal line. In addition, the second wiring 4612 may becalled a scan line. Further, the third wiring 4613 may be called astorage capacitor line.

Note that although the transistor 4601 is an N-channel transistor, itmay be a P-channel transistor. In Embodiment Modes 1 to 4, it ispreferable that an N-channel transistor be used as the transistor 4601.This is because since amorphous silicon can be used for a semiconductorlayer of the transistor, a manufacturing process can be simplified, andthus manufacturing cost can be reduced and a yield can be improved, anda semiconductor device such as a large display panel can also bemanufactured. Further, even when polysilicon or single crystal siliconis used for the semiconductor layer of the transistor, the manufacturingprocess can be simplified. In Embodiment Modes 5 to 8, it is preferablethat a P-channel transistor be used as the transistor 4601. This isbecause a manufacturing process can be simplified, so that manufacturingcost can be reduced and the yield can be improved.

Note that the first wiring 4611 corresponds to any one of the signallines S1 to Sm shown in the display devices in FIGS. 9, 11, 12, and 44.Note that the second wiring 4612 corresponds to any one of the scanlines G1 to Gn shown in the display devices in FIGS. 9, 11, 12, and 44.

Note that although the third wiring 4613 is not shown in FIGS. 9, 11,12, and 44, it is preferable that the third wiring 4613 be added toFIGS. 9, 11, 12, and 44 if necessary as described above.

Note that the capacitor 4602 has a function of holding a potential ofthe pixel electrode 4623 of the display element 4621. Thus, thecapacitor 4602 is connected between the pixel electrode 4623 and thethird wiring 4613; however, the present invention is not limited tothis. It is only necessary that the capacitor 4602 be provided so thatit can hold the potential of the pixel electrode 4623. The capacitor4602 may be connected to the second wiring 4612 of another pixel (e.g.,a pixel of a previous row) or may be connected to the opposite electrode4622 or an electrode corresponding to the opposite electrode 4622. Inaddition, when the display element 4621 has capacitive properties, thecapacitor 4602 and the third wiring 4613 are not necessarily provided.

As for an operating method, the first wiring 4611 is selected to turn onthe transistor 4601 and a video signal is input to each of the pixelelectrode 4623 and the capacitor 4602 from the first wiring 4611. Then,the display element 4621 has transmittivity in accordance with the videosignal.

Here, a driving method which enables a display device to have high imagequality is described. Note that as the driving method which enables thedisplay device to have high image quality, an overdriving method, adriving method which controls a common line (a storage capacitor line),backlight scanning, a high frequency driving method, and the like aredescribed. In addition, these driving methods can be freely combined.

First, an overdriving method is described with reference to FIGS. 47A to47C. FIG. 47A shows time change of output luminance with respect toinput voltage of a display element. Time change of output luminance ofthe display element with respect to input voltage 1 shown by a brokenline is like output luminance 1 also shown by a broken line. That is,although voltage for obtaining intended output luminance Low is Vi, timecorresponding to response speed of the element is necessary to achievethe intended output luminance Low when Vi is directly input as the inputvoltage.

Overdriving is a technique to increase the response speed. Specifically,overdriving is a method in which the input voltage is brought back to Viafter response speed of the element is increased by applying Vo which isvoltage higher than Vi to the element for a certain period so that theelement has output luminance which is close to the intended outputluminance Low. At this time, the input voltage is represented by inputvoltage 2 and the output luminance is represented by output luminance 2.Time to the intended luminance Low represented by a graph of the outputluminance 2 is shorter than that represented by a graph of the outputluminance 1.

Note that although the case is described in FIG. 47A in which the outputluminance is changed positively with respect to the input voltage, thepresent invention also includes the case in which the output luminanceis changed negatively with respect to the input voltage.

A circuit for achieving such driving is described with reference toFIGS. 47B and 47C. First, the case is described with reference to FIG.47B in which an input video signal Gi is a signal having an analog value(may be a discrete value) and an output video signal Go is also a signalhaving an analog value. An overdriving circuit shown in FIG. 47Bincludes an encoding circuit 4701, a frame memory 4702, a correctioncircuit 4703, and a DA converter circuit 4704.

First, the input video signal Gi is input to the encoding circuit 4701and is encoded. That is, the input video signal Gi is converted from ananalog signal to a digital signal having the appropriate number of bits.After that, the converted digital signal is input to each of the framememory 4702 and the correction circuit 4703. A video signal of aprevious frame held in the frame memory 4702 is also input to thecorrection circuit 4703 at the same time. Then, the correction circuit4703 outputs a corrected video signal in accordance with a numericalvalue table which is prepared in advance from the video signal of theframe and the video signal of the previous frame. At this time, anoutput switching signal may be input to the correction circuit 4703 sothat the corrected video signal and the video signal of the frame areswitched and output. Next, the corrected video signal or the videosignal of the frame is input to the DA converter circuit 4704. Then, theoutput video signal Go which is an analog signal in accordance with thecorrected video signal or the video signal of the frame is output. Inthis manner, overdriving can be achieved.

Subsequently, the case is described with reference to FIG. 47C in whichthe input video signal Gi is a signal having a digital value and theoutput video signal Go is also a signal having a digital value. Anoverdriving circuit shown in FIG. 47C includes a frame memory 4712 and acorrection circuit 4713.

The input video signal Gi is a digital signal and is input to the framememory 4712 and the correction circuit 4713. A video signal of aprevious frame held in the frame memory 4712 is also input to thecorrection circuit 4713 at the same time. Then, the correction circuit4713 outputs a corrected video signal in accordance with a numericalvalue table which is prepared in advance from the video signal of theframe and the video signal of the previous frame. At this time, anoutput switching signal may be input to the correction circuit 4713 sothat the corrected video signal and the video signal of the frame areswitched and output. In this manner, overdriving can be achieved.

Note that a combination of the numeric value table for obtaining thecorrected video signal is a product of the number of gray scales which1SF can have and the number of gray scales which 2SF can have. Thesmaller the number of this combination becomes, the more preferable,because data amount which is stored in the correction circuit 4713becomes small. In this embodiment mode, luminance of a dark image is 0in a halftone until a subframe which displays a bright image reaches thehighest luminance, and luminance of the bright image is constant afterthe subframe which displays the bright image reaches the highestluminance and until a maximum gray scale is displayed, so that thenumber of this combination can be made extremely small.

Note also that the overdriving circuit in the present invention alsoincludes the case in which the input video signal Gi is an analog signaland the output video signal Go is a digital signal. At this time, it isonly necessary that the DA converter circuit 4704 be removed from thecircuit shown in FIG. 47B. In addition, the overdriving circuit in thepresent invention also includes the case in which the input video signalGi is a digital signal and the output video signal Go is an analogsignal. At this time, it is only necessary that the encoding circuit4701 be removed from the circuit shown in FIG. 47B.

Driving which controls a potential of a common line is described withreference to FIGS. 48A and 48B. FIG. 48A is a diagram showing aplurality of pixel circuits in which one common line is provided withrespect to one scan line in a display device using a display elementwhich has capacitive properties like a liquid crystal element. Each ofthe pixel circuits shown in FIG. 48A includes a transistor 4801, anauxiliary capacitor 4802, a display element 4803, a video signal line4804, a scan line 4805, and a common line 4806.

Note that the transistor 4801, the auxiliary capacitor 4802, the displayelement 4803, the video signal line 4804, the scan line 4805, and thecommon line 4806 correspond to the transistor 4601, the capacitor 4602,the display element 4621, the first wiring 4611, the second wiring 4612,and the third wiring 4613 shown in FIG. 46A, respectively.

A gate terminal of the transistor 4801 is electrically connected to thescan line 4805; one of a source terminal and a drain terminal of thetransistor 4801 is electrically connected to the video signal line 4804;and the other of the source terminal and the drain terminal of thetransistor 4801 is electrically connected to one of terminals of theauxiliary capacitor 4802 and one of terminals of the display element4803. In addition, the other of the terminals of the auxiliary capacitor4802 is electrically connected to the common line 4806.

First, in each of pixels selected by the scan line 4805, voltagecorresponding to a video signal is applied to the display element 4803and the auxiliary capacitor 4802 through the video signal line 4804because the transistor 4801 is turned on. At this time, when the videosignal is a signal which makes all of pixels connected to the commonline 4806 display a minimum gray scale or when the video signal is asignal which makes all of the pixels connected to the common line 4806display a maximum gray scale, it is not necessary that the video signalbe written to each of the pixels through the video signal line 4804.Instead of writing the video signal through the video signal line 4804,voltage applied to the display element 4803 can be changed by changing apotential of the common line 4806.

Subsequently, FIG. 48B is a diagram showing a plurality of pixelcircuits in which two common lines are provided with respect to one scanline in a display device using a display element which has capacitiveproperties like a liquid crystal element. Each of the pixel circuitsshown in FIG. 48B includes a transistor 4811, an auxiliary capacitor4812, a display element 4813, a video signal line 4814, a scan line4815, a first common line 4816, and a second common line 4817.

A gate terminal of the transistor 4811 is electrically connected to thescan line 4815; one of a source terminal and a drain terminal of thetransistor 4811 is electrically connected to the video signal line 4814;and the other of the source terminal and the drain terminal of thetransistor 4811 is electrically connected to one of terminals of theauxiliary capacitor 4812 and one of terminals of the display element4813. In addition, the other of the terminals of the auxiliary capacitor4812 is electrically connected to the first common line 4816. Further,in a pixel which is adjacent to the pixel, the other of the terminals ofthe auxiliary capacitor 4812 is electrically connected to the secondcommon line 4817.

In the pixel circuits shown in FIG. 48B, the number of pixels which areelectrically connected to one common line is small. Therefore, bychanging a potential of the first common line 4816 or the second commonline 4817 instead of writing a video signal through the video signalline 4814, frequency of changing voltage applied to the display element4813 is significantly increased. In addition, source inversion drivingor dot inversion driving can be performed. By performing sourceinversion driving or dot inversion driving, reliability of the elementcan be improved and a flicker can be suppressed.

A scanning backlight is described with reference to FIGS. 49A to 49C.FIG. 49A is a view showing a scanning backlight in which cold cathodefluorescent lamps are arranged. The scanning backlight shown in FIG. 49Aincludes a diffusing plate 4901 and N pieces of cold cathode fluorescentlamps 4902-1 to 4902-N. The N pieces of the cold cathode fluorescentlamps 4902-1 to 4902-N are arranged on the back side of the diffusingplate 4901, so that the N pieces of the cold cathode fluorescent lamps4902-1 to 4902-N can be scanned while luminance thereof is changed.

Change in luminance of each of the cold cathode fluorescent lamps inscanning is described with reference to FIG. 49C. First, luminance ofthe cold cathode fluorescent lamp 4902-1 is changed for a certainperiod. After that, luminance of the cold cathode fluorescent lamp4902-2 which is provided adjacent to the cold cathode fluorescent lamp4902-1 is changed for the same period. In this manner, luminance ischanged sequentially from the cold cathode fluorescent lamp 4902-1 tothe cold cathode fluorescent lamp 4902-N. Although luminance which ischanged for a certain period is set to be lower than original luminancein FIG. 49C, it may also be higher than original luminance. In addition,although scanning is performed from the cold cathode fluorescent lamps4902-1 to 4902-N, scanning may also be performed from the cold cathodefluorescent lamps 4902-N to 4902-1, which is in a reversed order.

It is preferable that backlight luminance in a period with low luminancebe approximately the same as the highest luminance of a subframe inwhich a dark image is inserted. Specifically, the backlight luminance ispreferably the highest luminance Lmax 1 of 1SF when a dark image isinserted in 1SF, and the backlight luminance is preferably the highestluminance Lmax 2 of 2SF when a dark image is inserted in 2SF.

Note that an LED may be used as a light source of the scanningbacklight. The scanning backlight in that case is as shown in FIG. 49B.The scanning backlight shown in FIG. 49B includes a diffusing plate 4911and light sources 4912-1 to 4912-N, in each of which LEDs are arranged.When the LED is used as the light source of the scanning backlight,there is an advantage in that the backlight can be thin and lightweight.In addition, there is also an advantage that a color reproduction areacan be widened. Further, since the LEDs which are arranged in each ofthe light sources 4912-1 to 4912-N can be similarly scanned, a dotscanning backlight can also be obtained. By using the dot scanningbacklight, image quality of a moving image can be further improved.

A high frequency driving method is described with reference to FIGS. 50Ato 50C. FIG. 50A is a view in which driving is performed by inserting adark image at a frame frequency of 60 Hz. A reference numeral 5001denotes a bright image of the frame; a reference numeral 5002 denotes adark image of the frame; a reference numeral 5003 denotes a bright imageof the next frame; and a reference numeral 5004 denotes a dark image ofthe next frame. In the case of performing driving at 60 Hz, there is anadvantage in that consistency with a frame rate of a video signal can beeasily obtained and an image processing circuit does not becomecomplicated.

FIG. 50B is a view in which driving is performed by inserting a darkimage at a frame frequency of 90 Hz. A reference numeral 5011 denotes abright image of the frame; a reference numeral 5012 denotes a dark imageof the frame; a reference numeral 5013 denotes a bright image of a firstimage which is formed from the frame, the next frame, and a frame afternext; a reference numeral 5014 denotes a dark image of the first imagewhich is formed from the frame, the next frame, and the frame afternext; a reference numeral 5015 denotes a bright image of a second imagewhich is formed from the frame, the next frame, and the frame afternext; and a reference numeral 5016 denotes a dark image of the secondimage which is formed from the frame, the next frame, and the frameafter next. In the case of performing driving at 90 Hz, there is anadvantage in that operating frequency of a peripheral driver circuit ismade not so high and image quality of a moving image can be effectivelyimproved.

FIG. 50C is a view in which driving is performed by inserting a darkimage at a frame frequency of 120 Hz. A reference numeral 5021 denotes abright image of the frame; a reference numeral 5022 denotes a dark imageof the frame; reference numeral 5023 denotes a bright image of an imagewhich is formed from the frame and the next frame; a reference numeral5024 denotes a dark image of the image which is formed from the frameand the next frame; a reference numeral 5025 denotes a bright image ofthe next frame; a reference numeral 5026 denotes a dark image of thenext frame; a reference numeral 5027 denotes a bright image of an imagewhich is formed from the next frame and a frame after next; and areference numeral 5028 denotes a dark image of the image which is formedform the next frame and the frame after next. In the case of performingdriving at 120 Hz, there is an advantage in that an advantageous effectof improving image quality of a moving image is remarkable and an afterimage is hardly perceived.

FIGS. 51A to 55B show top plan views and cross-sectional views of eachof the pixels shown in FIGS. 46A and 46B. FIGS. 51A to 55B havedifferent operation modes of a liquid crystal.

First, FIGS. 51A and 51B are a cross-sectional view and a top plan viewof a pixel in which a so-called TN mode which is one of pixel structuresof a liquid crystal display device is combined with a thin filmtransistor (a TFT). FIG. 51A is a cross-sectional view of the pixel andFIG. 51B is a top plan view of the pixel. Further, the cross-sectionalview of the pixel shown in FIG. 51A corresponds to a line a-a′ in thetop plan view of the pixel shown in FIG. 51B. By applying the presentinvention to a liquid crystal display device having the pixel structureshown in FIGS. 51A and 51B, the liquid crystal display device can bemanufactured at low cost.

A pixel structure of a TN-mode liquid crystal display device isdescribed with reference to FIG. 51A. The liquid crystal display deviceincludes a basic portion which displays an image, which is called aliquid crystal panel. The liquid crystal panel is manufactured asfollows: two processed substrates are attached to each other with a gapof several μm therebetween and a liquid crystal material is injectedbetween the two substrates. In FIG. 51A, the two substrates correspondto a first substrate 5101 and a second substrate 5116. A TFT and a pixelelectrode may be formed over the first substrate, and a light shieldingfilm 5114, a color filter 5115, a fourth conductive layer 5113, a spacer5117, and a second alignment film 5112 may be formed on the secondsubstrate.

Note that the present invention can also be implemented without formingthe TFT over the first substrate 5101. When the present invention isimplemented without forming the TFT, the number of steps is reduced, sothat manufacturing cost can be reduced. In addition, since the structureis simple, a yield can be improved. On the other hand, when the presentinvention is implemented by forming the TFT, a larger display device canbe obtained.

The TFT shown in FIGS. 51A and 51B is a bottom-gate TFT using anamorphous semiconductor, which has an advantage that it can bemanufactured at low cost by using a large substrate. However, thepresent invention is not limited to this. As a structure of a TFT whichcan be used, there are a channel-etched type, a channel-protective type,and the like as for a bottom-gate TFT. Alternatively, a top-gate typemay be used. Further, not only an amorphous semiconductor but also apolycrystalline semiconductor may be used.

Note that the present invention can also be implemented without formingthe light shielding film 5114 on the second substrate 5116. When thepresent invention is implemented without forming the light shieldingfilm 5114, the number of steps is reduced, so that manufacturing costcan be reduced. In addition, since the structure is simple, the yieldcan be improved. On the other hand, when the present invention isimplemented by forming the light shielding film 5114, a display devicewith little light leakage at the time of black display can be obtained.

Note that the present invention can also be implemented without formingthe color filter 5115 on the second substrate 5116. When the presentinvention is implemented without forming the color filter 5115, thenumber of steps is reduced, so that manufacturing cost can be reduced.In addition, since the structure is simple, the yield can be improved.On the other hand, when the present invention is implemented by formingthe color filter 5115, a display device which can perform color displaycan be obtained.

Note that the present invention can also be implemented by dispersingspherical spacers instead of providing the spacer 5117 on the secondsubstrate 5116. When the present invention is implemented by dispersingthe spherical spacers, the number of steps is reduced, so thatmanufacturing cost can be reduced. In addition, since the structure issimple, the yield can be improved. On the other hand, when the presentinvention is implemented by forming the spacer 5117, a position of thespacer is not varied, so that a distance between the two substrates canbe uniformed and a display device with little display unevenness can beobtained.

Next, a process to be performed to the first substrate 5101 isdescribed. A substrate having light-transmitting properties ispreferably used for the first substrate 5101. For example, a quartzsubstrate, a glass substrate, or a plastic substrate may be used.Alternatively, the first substrate 5101 may be a light shieldingsubstrate, a semiconductor substrate, or an SOI (Silicon On Insulator)substrate.

First, a first insulating film 5102 may be formed over the firstsubstrate 5101. The first insulating film 5102 may be an insulating filmsuch as a silicon oxide film, a silicon nitride film, or a siliconoxynitride film (SiO_(x)N_(y)) film. Alternatively, an insulating filmhaving a stacked-layer structure in which at least two of these filmsare combined may be used. When the present invention is implemented byforming the first insulating film 5102, change in characteristics of theTFT due to an impurity from the substrate which adversely affects asemiconductor layer can be prevented, so that a display device havinghigh reliability can be obtained. On the other hand, when the presentinvention is implemented without forming the first insulating film 5102,the number of steps is reduced, so that manufacturing cost can bereduced. In addition, since the structure is simple, the yield can beimproved.

Next, a first conductive layer 5103 is formed over the first substrate5101 or the first insulating film 5102. A shape of the first conductivelayer 5103 may be processed. A step of processing the shape ispreferably as follows. First, the first conductive layer 5103 is formedover the entire surface. At this time, a film formation apparatus suchas a sputtering apparatus or a CVD apparatus may be used. Next, aphotosensitive resist material is formed over the entire surface of thefirst conductive layer 5103 formed over the entire surface. Then, theresist material is exposed to light in accordance with an intended shapeby photolithography, a laser direct drawing method, or the like. Next,either the resist material which is exposed to light or the resistmaterial which is not exposed to light is removed by etching, so that amask for processing the shape of the first conductive layer 5103 can beobtained. After that, the first conductive layer 5103 is removed byetching in accordance with a formed mask pattern, so that the shape ofthe first conductive layer 5103 can be processed into a desired pattern.Note that there are a chemical method (e.g., wet etching) and a physicalmethod (e.g., dry etching) as a method for etching the first conductivelayer 5103, and the method is appropriately selected consideringproperties or the like of a material of the first conductive layer 5103and a material used for a portion below the first conductive layer 5103.As a material used for the first conductive layer 5103, Mo, Ti, Al, Nd,Cr, or the like is preferable. Alternatively, a stacked-layer structureof these materials may be used. Further alternatively, the firstconductive layer 5103 may be formed as a single layer or a stacked-layerstructure of an alloy of these materials.

Next, a second insulating film 5104 is formed. At this time, a filmformation apparatus such as a sputtering apparatus or a CVD apparatusmay be used. As a material used for the second insulating film 5104, athermal oxide film, a silicon oxide film, a silicon nitride film, asilicon oxynitride film, or the like is preferable. Alternatively, astacked-layer structure of these films may be used. It is particularlypreferable that part of the second insulating film 5104 which is incontact with a first semiconductor layer 5105 be a silicon oxide film.This is because a trap level at an interface between the semiconductorfilm 5105 and the second insulating film 5104 is decreased when asilicon oxide film is used. When the first conductive layer 5103 isformed of Mo, it is preferable that part of the second insulating film5104 which is in contact with the first conductive layer 5103 be asilicon nitride film. This is because a silicon nitride film does notoxidize Mo.

Next, the first semiconductor layer 5105 is formed. After that, it ispreferable that a second semiconductor layer 5106 be formedsequentially. Shapes of the first semiconductor layer 5105 and thesecond semiconductor layer 5106 may be processed. A method forprocessing the shapes is preferably a method such as photolithography asdescribed above. As a material used for the first semiconductor layer5105, silicon, silicon germanium (SiGe), or the like is preferable.Further, as a material used for the second semiconductor layer 5106,silicon or the like including phosphorus or the like is preferable.

Next, a second conductive layer 5107 is formed. At this time, it ispreferable to use sputtering or a printing method. A material used forthe second conductive layer 5107 may have light-transmitting propertiesor reflectiveness. In the case where the material used for the secondconductive layer has light-transmitting properties, for example, anindium tin oxide (ITO) film formed by mixing tin oxide into indiumoxide, an indium tin silicon oxide (ITSO) film formed by mixing siliconoxide into indium tin oxide (ITO), an indium zinc oxide (IZO) filmformed by mixing zinc oxide into indium oxide, a zinc oxide film, or atin oxide film can be used. Note that IZO is a transparent conductivematerial formed by sputtering using a target in which 2 to 20 wt % ofzinc oxide (ZnO) is mixed into ITO. On the other hand, in the case ofhaving reflectiveness, Ti, Mo, Ta, Cr, W, Al, or the like can be used.In addition, a two-layer structure in which Al and Ti, Mo, Ta, Cr, or Ware stacked, or a three-layer structure in which Al is interposedbetween metals such as Ti, Mo, Ta, Cr, and W may be employed. Note thata shape of the second conductive layer 5107 may be processed. A methodfor processing the shape is preferably a method such as photolithographyas described above. Note also that it is preferable that etching beperformed by dry etching. Dry etching may be performed by a dry etchingapparatus using a high-density plasma source such as ECR (ElectronCycrotron Resonance) or ICP (Inductive Coupled Plasma).

Next, a channel region of the TFT is formed. At this time, etching ofthe second semiconductor layer 5106 may be performed by using the secondconductive layer 5107 as a mask. Thus, the number of masks can bereduced, so that manufacturing cost can be reduced. By performingetching of the second semiconductor layer 5106 having conductivity, aportion which is removed serves as the channel region of the TFT. Notethat without sequentially forming the first semiconductor layer 5105 andthe second semiconductor layer 5106, a film serving as a stopper may beformed and patterned in a portion serving as the channel region of theTFT after formation of the first semiconductor layer 5105, and then, thesecond semiconductor layer 5106 may be formed. Thus, since the channelregion of the TFT can be formed without using the second conductivelayer 5107 as a mask, a degree of freedom of a layout pattern isincreased, which is an advantage. In addition, since the firstsemiconductor layer 5105 is not etched when the second semiconductorlayer 5106 is etched, the channel region of the TFT can be surely formedwithout causing an etching defect, which is also an advantage.

Next, a third insulating film 5108 is formed. It is preferable that thethird insulating film 5108 have light-transmitting properties. Note thatas a material used for the third insulating film 5108, an inorganicmaterial (e.g., silicon oxide, silicon nitride, or silicon oxynitride),an organic compound material having a low dielectric constant (e.g., aphotosensitive or nonphotosensitive organic resin material), or the likeis preferable. Alternatively, a material including siloxane may be used.Siloxane is a material in which a skeleton structure is formed by a bondof silicon (Si) and oxygen (O). As a substituent, an organic groupincluding at least hydrogen (e.g., an alkyl group or aromatichydrocarbon) is used. As the substituent, a fluoro group can also beused. Alternatively, the organic group including at least hydrogen andthe fluoro group may be used as the substituent. The third insulatingfilm 5108 may have a stacked-layer structure. Note that a shape of thethird insulating film 5108 may be processed. A method for processing theshape is preferably a method such as photolithography as describedabove. At this time, by etching the second insulating film 5104 at thesame time, a contact hole reaching not only the third insulating film5108 but also the first conductive layer 5103 can be formed. It ispreferable that a surface of the third insulating film 5108 be as flatas possible. This is because alignment of liquid crystal molecules isadversely affected by unevenness of a surface which is in contact with aliquid crystal.

Next, a third conductive layer 5109 is formed. At this time, it ispreferable to use sputtering or a printing method. Note that a materialused for the third conductive layer 5109 may have light-transmittingproperties or reflectiveness, similarly to the second conductive layer5107. Note also that a material which can be used for the thirdconductive layer 5109 may be similar to that of the second conductivelayer 5107. In addition, a shape of the third conductive layer 5109 maybe processed. A method for processing the shape may be similar to thatof the second conductive layer 5107.

Next, a first alignment film 5110 is formed. As the first alignment film5110, a film of a polymer such as polyimide can be used. After formingthe first alignment film 5110, rubbing may be performed in order tocontrol alignment of the liquid crystal molecules. Rubbing is a step forforming lines in an alignment film by rubbing the alignment film with acloth. By performing rubbing, the alignment film can have alignmentproperties.

The first substrate 5101 formed as described above is attached to thesecond substrate 5116 provided with the light shielding film 5114, thecolor filter 5115, the fourth conductive layer 5113, the spacer 5117,and the second alignment film 5112 with a sealant with a gap of severalμm therebetween, and then, a liquid crystal material is injected betweenthe two substrates, so that the liquid crystal panel can bemanufactured. Note that in the TN-mode liquid crystal panel as shown inFIGS. 51A and 51B, the fourth conductive layer 5113 may be formed on theentire surface of the second substrate 5116.

Next, a feature of a pixel structure of the TN-mode liquid crystal panelshown in FIGS. 51A and 51B is described. Liquid crystal molecules 5118shown in FIG. 51A are long and thin molecules each having a major axisand a minor axis. In FIG. 51A, each of the liquid crystal molecules 5118is expressed by its length to show a direction of each of the liquidcrystal molecules. That is, the direction of the major axis of theliquid crystal molecule 5118 which is expressed to be long is parallelto the paper, and the direction of the major axis becomes closer to anormal direction of the paper as the liquid crystal molecule 5118 isexpressed to be shorter. That is, among the liquid crystal molecules5118 shown in FIG. 51A, the direction of the major axis of the liquidcrystal molecule which is close to the first substrate 5101 and thedirection of the major axis of the liquid crystal molecule which isclose to the second substrate 5116 are different from each other by 90degrees, and the directions of the major axes of the liquid crystalmolecules 5118 located therebetween are arranged so as to smoothlyconnect the two directions. That is, the liquid crystal molecules 5118shown in FIG. 51A are aligned to be twisted by 90 degrees between thefirst substrate 5101 and the second substrate 5116.

Next, an example of pixel layout of a TN-mode liquid crystal displaydevice to which the present invention is applied is described withreference to FIG. 51B. A pixel of the TN-mode liquid crystal displaydevice to which the present invention is applied may include a scan line5121, a video signal line 5122, a capacitor line 5123, a TFT 5124, apixel electrode 5125, and a pixel capacitor 5126.

Since the scan line 5121 is electrically connected to a gate terminal ofthe TFT 5124, it is preferable that the scan line 5121 be formed of thefirst conductive layer 5103.

Since the video signal line 5122 is electrically connected to a sourceterminal or a drain terminal of the TFT 5124, it is preferable that thevideo signal line 5122 be formed of the second conductive layer 5107.Further, since the scan line 5121 and the video signal line 5122 arearranged in matrix, it is preferable that the scan line 5121 and thevideo signal line 5122 be at least formed of conductive layers indifferent layers.

The capacitor line 5123 is a wiring for forming the pixel capacitor 5126by being provided to be parallel to the pixel electrode 5125, and it ispreferable that the capacitor line 5123 be formed of the firstconductive layer 5103. Note that the capacitor line 5123 may be extendedalong the video signal line 5122 so as to surround the video signal line5122 as shown in FIG. 51B. Thus, a phenomenon in which a potential of anelectrode, which is supposed to be held, is changed in accordance withpotential change in the video signal line 5122, namely, a so-calledcross talk can be reduced. Note also that in order to reduce crosscapacitance with the video signal line 5122, the first semiconductorlayer 5105 may be provided in a cross region of the capacitor line 5123and the video signal line 5122 as shown in FIG. 51B.

The TFT 5124 operates as a switch which electrically connects the videosignal line 5122 and the pixel electrode 5125. Note that as shown inFIG. 51B, one of a source region and a drain region of the TFT 5124 maybe provided so as to surround the other of the source region and thedrain region. Thus, wide channel width can be obtained in a small areaand switching capability can be increased. Note also that as shown inFIG. 51B, the gate terminal of the TFT 5124 may be provided so as tosurround the first semiconductor layer 5105.

The pixel electrode 5125 is electrically connected to one of the sourceterminal and the drain terminal of the TFT 5124. The pixel electrode5125 is an electrode for applying signal voltage which is transmittedthrough the video signal line 5122 to the liquid crystal element. Inaddition, the pixel electrode 5125 and the capacitor line 5123 may formthe pixel capacitor 5126. Thus, the pixel electrode 5125 can also have afunction of holding the signal voltage which is transmitted through thevideo signal line 5122. Note that the pixel electrode 5125 may berectangular as shown in FIG. 51B. Thus, an aperture ratio of the pixelcan be increased, so that efficiency of the liquid crystal displaydevice can be improved. In addition, in the case where the pixelelectrode 5125 is formed using a material having light-transmittingproperties, a transmissive liquid crystal display device can beobtained. A transmissive liquid crystal display device has high colorreproductivity and can display an image with high image quality.Alternatively, in the case where the pixel electrode 5125 is formedusing a material having reflectiveness, a reflective liquid crystaldisplay device can be obtained. A reflective liquid crystal displaydevice has high visibility in a bright environment such as outside, andcan extremely reduce power consumption because a backlight is notnecessary. Note that in the case where the pixel electrode 5125 isformed using both a material having light-transmitting properties and amaterial having reflectiveness, a semi-transmissive liquid crystaldisplay device which has advantages of both of the above can beobtained. Note also that in the case where the pixel electrode 5125 isformed using a material having reflectiveness, a surface of the pixelelectrode 5125 may have unevenness. Thus, since reflected light isreflected diffusely, an advantage that angular dependency of intensitydistribution of reflected light is decreased can be obtained. That is, areflective liquid crystal display device, brightness of which is uniformat any angle, can be obtained.

Next, a VA (Vertical Alignment)-mode liquid crystal display device towhich the present invention is applied is described with reference toFIGS. 52A and 52B. FIGS. 52A and 52B are a cross-sectional view and atop plan view of a pixel in which the present invention is applied toone of pixel structures of a VA-mode liquid crystal display device inwhich an alignment control projection is used so that liquid crystalmolecules are controlled to have various directions and a viewing angleis widened, namely, a so-called MVA (Multi-domain Vertical Alignment)mode. FIG. 52A is a cross-sectional view of a pixel and FIG. 52B is atop plan view of the pixel. In addition, the cross-sectional view of thepixel shown in FIG. 52A corresponds to a line a-a′ in the top plan viewof the pixel shown in FIG. 52B. By applying the present invention to aliquid crystal display device having the pixel structure shown in FIGS.52A and 52B, a liquid crystal display device having a wide viewingangle, high response speed, and high contrast can be obtained.

A pixel structure of an MVA-mode liquid crystal display device isdescribed with reference to FIG. 52A. The liquid crystal display deviceincludes a basic portion which displays an image, which is called aliquid crystal panel. The liquid crystal panel is manufactured asfollows: two processed substrates are attached to each other with a gapof several μm therebetween, and a liquid crystal material is injectedbetween the two substrates. In FIG. 52A, the two substrates correspondto a first substrate 5201 and a second substrate 5216. A TFT and a pixelelectrode may be formed over the first substrate, and a light shieldingfilm 5214, a color filter 5215, a fourth conductive layer 5213, a spacer5217, a second alignment film 5212, and an alignment control projection5219 may be formed on the second substrate.

Note that the present invention can also be implemented without formingthe TFT over the first substrate 5201. When the present invention isimplemented without forming the TFT, the number of steps is reduced, sothat manufacturing cost can be reduced. In addition, since the structureis simple, a yield can be improved. On the other hand, when the presentinvention is implemented by forming the TFT, a larger display device canbe obtained.

The TFT shown in FIGS. 52A and 52B is a bottom-gate TFT using anamorphous semiconductor, which has an advantage that it can bemanufactured at low cost by using a large substrate. However, thepresent invention is not limited to this. As a structure of a TFT whichcan be used, there are a channel-etched type, a channel-protective type,and the like as for a bottom-gate TFT. Alternatively, a top-gate typemay be used. Further, not only an amorphous semiconductor but also apolycrystalline semiconductor may be used.

Note that the present invention can also be implemented without formingthe light shielding film 5214 on the second substrate 5216. When thepresent invention is implemented without forming the light shieldingfilm 5214, the number of steps is reduced, so that manufacturing costcan be reduced. In addition, since the structure is simple, the yieldcan be improved. On the other hand, when the present invention isimplemented by forming the light shielding film 5214, a display devicewith little light leakage at the time of black display can be obtained.

Note that the present invention can also be implemented without formingthe color filter 5215 on the second substrate 5216. When the presentinvention is implemented without forming the color filter 5215, thenumber of steps is reduced, so that manufacturing cost can be reduced.In addition, since the structure is simple, the yield can be improved.On the other hand, when the present invention is implemented by formingthe color filter 5215, a display device which can perform color displaycan be obtained.

Note that the present invention can also be implemented by dispersingspherical spacers instead of providing the spacer 5217 on the secondsubstrate 5216. When the present invention is implemented by dispersingthe spherical spacers, the number of steps is reduced, so thatmanufacturing cost can be reduced. In addition, since the structure issimple, the yield can be improved. On the other hand, when the presentinvention is implemented by forming the spacer 5217, a position of thespacer is not varied, so that a distance between the two substrates canbe uniformed and a display device with little display unevenness can beobtained.

Next, as for a process to be performed to the first substrate 5201, themethod described in FIGS. 51A and 51B may be used; therefore,description is omitted. Here, the first substrate 5201, a firstinsulating film 5202, a first conductive layer 5203, a second insulatingfilm 5204, a first semiconductor layer 5205, a second semiconductorlayer 5206, a second conductive layer 5207, a third insulating film5208, a third conductive layer 5209, and a first alignment film 5210correspond to the first substrate 5101, the first insulating film 5102,the first conductive layer 5103, the second insulating film 5104, thefirst semiconductor layer 5105, the second semiconductor layer 5106, thesecond conductive layer 5107, the third insulating film 5108, the thirdconductive layer 5109, and the first alignment film 5110 in FIG. 51A,respectively. Note that although not shown in the drawings, an alignmentcontrol projection may also be provided on the first substrate side.Thus, alignment of liquid crystal molecules can be controlled moresurely. In addition, the first alignment film 5210 and the secondalignment film 5212 may be vertical alignment films. Therefore, liquidcrystal molecules 5218 can be aligned vertically.

The first substrate 5201 formed as described above is attached to thesecond substrate 5216 provided with the light shielding film 5214, thecolor filter 5215, the fourth conductive layer 5213, the spacer 5217,and the second alignment film 5212 with a sealant with a gap of severalμm therebetween, and then, a liquid crystal material is injected betweenthe two substrates, so that the liquid crystal panel can bemanufactured. Note that in the MVA-mode liquid crystal panel as shown inFIGS. 52A and 52B, the fourth conductive layer 5213 may be formed on theentire surface of the second substrate 5216. Further, the alignmentcontrol projection 5219 may be formed so as to be in contact with thefourth conductive layer 5213. Although a shape of the alignment controlprojection 5219 is not limited, a shape with a smooth curve ispreferable. Thus, since alignment of adjacent liquid crystal molecules5218 becomes extremely similar, an alignment defect can be reduced.Furthermore, a defect of the alignment film in which the secondalignment film 5212 is disconnected by the alignment control projection5219 can be reduced.

Next, a feature of the pixel structure of the MVA-mode liquid crystalpanel shown in FIGS. 52A and 52B is described. The liquid crystalmolecules 5218 shown in FIG. 52A are long and thin molecules each havinga major axis and a minor axis. In FIG. 52A, each of the liquid crystalmolecules 5218 is expressed by its length to show a direction of each ofthe liquid crystal molecules. That is, a direction of the major axis ofthe liquid crystal molecule 5218 which is expressed to be long isparallel to the paper, and the direction of the major axis becomescloser to a normal direction of the paper as the liquid crystal molecule5218 is expressed to be shorter. That is, each of the liquid crystalmolecules 5218 shown in FIG. 52A is aligned so that the direction of themajor axis is normal to the alignment film. Thus, the liquid crystalmolecules 5218 in a portion where the alignment control projection 5219is provided are aligned radially with the alignment control projection5219 as a center. With this state, a liquid crystal display devicehaving a wide viewing angle can be obtained.

Next, an example of pixel layout of the MVA-mode liquid crystal displaydevice to which the present invention is applied is described withreference to FIG. 52B. The pixel of the MVA-mode liquid crystal displaydevice to which the present invention is applied may include a scan line5221, a video signal line 5222, a capacitor line 5223, a TFT 5224, apixel electrode 5225, a pixel capacitor 5226, and an alignment controlprojection 5219.

Since the scan line 5221 is electrically connected to a gate terminal ofthe TFT 5224, it is preferable that the scan line 5221 be formed of thefirst conductive layer 5203.

Since the video signal line 5222 is electrically connected to a sourceterminal or a drain terminal of the TFT 5224, it is preferable that thevideo signal line 5222 be formed of the second conductive layer 5207.Further, since the scan line 5221 and the video signal line 5222 arearranged in matrix, it is preferable that the scan line 5221 and thevideo signal line 5222 be at least formed of conductive layers indifferent layers.

The capacitor line 5223 is a wiring for forming the pixel capacitor 5226by being provided to be parallel to the pixel electrode 5225, and it ispreferable that the capacitor line 5223 be formed of the firstconductive layer 5203. Note that the capacitor line 5223 may be extendedalong the video signal line 5222 so as to surround the video signal line5222 as shown in FIG. 52B. Thus, a phenomenon in which a potential of anelectrode, which is supposed to be held, is changed in accordance withpotential change in the video signal line 5222, namely, a so-calledcross talk can be reduced. Note also that in order to reduce crosscapacitance with the video signal line 5222, the first semiconductorlayer 5205 may be provided in a cross region of the capacitor line 5223and the video signal line 5222 as shown in FIG. 52B.

The TFT 5224 operates as a switch which electrically connects the videosignal line 5222 and the pixel electrode 5225. Note that as shown inFIG. 52B, one of a source region and a drain region of the TFT 5224 maybe provided so as to surround the other of the source region and thedrain region. Thus, wide channel width can be obtained in a small areaand switching capability can be increased. Note also that as shown inFIG. 52B, the gate terminal of the TFT 5224 may be provided so as tosurround the first semiconductor layer 5205.

The pixel electrode 5225 is electrically connected to one of the sourceterminal and the drain terminal of the TFT 5224. The pixel electrode5225 is an electrode for applying signal voltage which is transmittedthrough the video signal line 5222 to the liquid crystal element. Inaddition, the pixel electrode 5225 and the capacitor line 5223 may formthe pixel capacitor 5226. Thus, the pixel electrode 5225 can also have afunction of holding the signal voltage which is transmitted through thevideo signal line 5222. Note that the pixel electrode 5225 may berectangular as shown in FIG. 52B. Thus, an aperture ratio of the pixelcan be increased, so that efficiency of the liquid crystal displaydevice can be improved. In addition, in the case where the pixelelectrode 5225 is formed using a material having light-transmittingproperties, a transmissive liquid crystal display device can beobtained. A transmissive liquid crystal display device has high colorreproductivity and can display an image with high image quality.Alternatively, in the case where the pixel electrode 5225 is formedusing a material having reflectiveness, a reflective liquid crystaldisplay device can be obtained. A reflective liquid crystal displaydevice has high visibility in a bright environment such as outside, andcan extremely reduce power consumption because a backlight is notnecessary. Note that in the case where the pixel electrode 5225 isformed using both a material having light-transmitting properties and amaterial having reflectiveness, a semi-transmissive liquid crystaldisplay device which has advantages of both of the above can beobtained. Note also that in the case where the pixel electrode 5225 isformed using a material having reflectiveness, a surface of the pixelelectrode 5225 may have unevenness. Thus, since reflected light isreflected diffusely, an advantage that angular dependency of intensitydistribution of reflected light is decreased can be obtained. That is, areflective liquid crystal display device, brightness of which is uniformat any angle, can be obtained.

Next, another example of a VA (vertical alignment)-mode liquid crystaldisplay device to which the present invention is applied is describedwith reference to FIGS. 53A and 53B. FIGS. 53A and 53B are across-sectional view and a top plan view of a pixel in which the presentinvention is applied to one of pixel structures of a VA-mode liquidcrystal display device in which a fourth conductive layer 5313 ispatterned so that liquid crystal molecules are controlled to havevarious directions and a viewing angle is widened, namely, a so-calledPVA (Patterned Vertical Alignment) mode. FIG. 53A is a cross-sectionalview of a pixel and FIG. 53B is a top plan view of the pixel. Further,the cross-sectional view of the pixel shown in FIG. 53A corresponds to aline a-a′ in the top plan view of the pixel shown in FIG. 53B. Byapplying the present invention to a liquid crystal display device havingthe pixel structure shown in FIGS. 53A and 53B, a liquid crystal displaydevice having a wide viewing angle, high response speed, and highcontrast can be obtained.

A pixel structure of a PVA-mode liquid crystal display device isdescribed with reference to FIG. 53A. The liquid crystal display deviceincludes a basic portion which displays an image, which is called aliquid crystal panel. The liquid crystal panel is manufactured asfollows: two processed substrates are attached to each other with a gapof several μm therebetween and a liquid crystal material is injectedbetween the two substrates. In FIG. 53A, the two substrates correspondto a first substrate 5301 and a second substrate 5316. A TFT and a pixelelectrode may be formed over the first substrate, and a light shieldingfilm 5314, a color filter 5315, a fourth conductive layer 5313, a spacer5317, and a second alignment film 5312 may be formed on the secondsubstrate.

Note that the present invention can also be implemented without formingthe TFT over the first substrate 5301. When the present invention isimplemented without forming the TFT, the number of steps is reduced, sothat manufacturing cost can be reduced. In addition, since the structureis simple, the yield can be improved. On the other hand, when thepresent invention is implemented by forming the TFT, a larger displaydevice can be obtained.

The TFT shown in FIGS. 53A and 53B is a bottom-gate TFT using anamorphous semiconductor, which has an advantage that it can bemanufactured at low cost by using a large substrate. However, thepresent invention is not limited to this. As a structure of a TFT whichcan be used, there are a channel-etched type, a channel-protective type,and the like as for a bottom-gate TFT. Alternatively, a top-gate typemay be used. Further, not only an amorphous semiconductor but also apolycrystalline semiconductor may be used.

Note that the present invention can also be implemented without formingthe light shielding film 5314 on the second substrate 5316. When thepresent invention is implemented without forming the light shieldingfilm 5314, the number of steps is reduced, so that manufacturing costcan be reduced. In addition, since the structure is simple, the yieldcan be improved. On the other hand, when the present invention isimplemented by forming the light shielding film 5314, a display devicewith little light leakage at the time of black display can be obtained.

Note that the present invention can also be implemented without formingthe color filter 5315 on the second substrate 5316. When the presentinvention is implemented without forming the color filter 5315, thenumber of steps is reduced, so that manufacturing cost can be reduced.In addition, since the structure is simple, the yield can be improved.On the other hand, when the present invention is implemented by formingthe color filter 5315, a display device which can perform color displaycan be obtained.

Note that the present invention can also be implemented by dispersingspherical spacers instead of providing the spacer 5317 on the secondsubstrate 5316. When the present invention is implemented by dispersingthe spherical spacers, the number of steps is reduced, so thatmanufacturing cost can be reduced. In addition, since the structure issimple, the yield can be improved. On the other hand, when the presentinvention is implemented by forming the spacer 5317, a position of thespacer is not varied, so that a distance between the two substrates canbe uniformed and a display device with little display unevenness can beobtained.

Next, as for a process to be performed to the first substrate 5301, themethod described in FIGS. 51A and 51B may be used; therefore,description is omitted. Here, the first substrate 5301, a firstinsulating film 5302, a first conductive layer 5303, a second insulatingfilm 5304, a first semiconductor layer 5305, a second semiconductorlayer 5306, a second conductive layer 5307, a third insulating film5308, a third conductive layer 5309, and a first alignment film 5310correspond to the first substrate 5101, the first insulating film 5102,the first conductive layer 5103, the second insulating film 5104, thefirst semiconductor layer 5105, the second semiconductor layer 5106, thesecond conductive layer 5107, the third insulating film 5108, the thirdconductive layer 5109, and the first alignment film 5110 in FIG. 51A,respectively. Note that an electrode notch portion may be provided tothe third conductive layer 5309 on the first substrate 5301 side. Thus,alignment of liquid crystal molecules can be controlled more surely. Inaddition, the first alignment film 5310 and the second alignment film5312 may be vertical alignment films. Therefore, liquid crystalmolecules 5318 can be aligned vertically.

The first substrate 5301 formed as described above is attached to thesecond substrate 5316 provided with the light shielding film 5314, thecolor filter 5315, the fourth conductive layer 5313, the spacer 5317,and the second alignment film 5312 with a sealant with a gap of severalμm therebetween, and then, a liquid crystal material is injected betweenthe two substrates, so that the liquid crystal panel can bemanufactured. Note that in the PVA-mode liquid crystal panel as shown inFIGS. 53A and 53B, the fourth conductive layer 5313 may be patterned toform an electrode notch portion 5319. Note also that although a shape ofthe electrode notch portion 5319 is not limited, a shape in which aplurality of rectangles having different directions are combined ispreferable. Thus, since a plurality of regions having differentalignment can be formed, a liquid crystal display device having a wideviewing angle can be obtained. Further, it is preferable that a shape ofthe fourth conductive layer 5313 at a boundary between the electrodenotch portion 5319 and the fourth conductive layer 5313 be a smoothcurve. Thus, since alignment of the adjacent liquid crystal molecules5318 is extremely similar, an alignment defect can be reduced.Furthermore, a defect of the alignment film in which the secondalignment film 5312 is disconnected by the electrode notch portion 5319can be reduced.

Next, a feature of the pixel structure of the PVA-mode liquid crystalpanel shown in FIGS. 53A and 53B is described. The liquid crystalmolecules 5318 shown in FIG. 53A are long and thin molecules each havinga major axis and a minor axis. In FIG. 53A, each of the liquid crystalmolecules 5318 is expressed by its length to show a direction of each ofthe liquid crystal molecules. That is, a direction of the major axis ofthe liquid crystal molecule 5318 which is expressed to be long isparallel to the paper, and the direction of the major axis becomescloser to a normal direction of the paper as the liquid crystal molecule5318 is expressed to be shorter. That is, each of the liquid crystalmolecules 5318 shown in FIG. 53A is aligned so that the direction of themajor axis is normal to the alignment film. Thus, the liquid crystalmolecules 5318 in a portion where the electrode notch portion isprovided are aligned radially with the boundary between the electrodenotch portion 5319 and the fourth conductive layer 5313 as a center.With this state, a liquid crystal display device having a wide viewingangle can be obtained.

Next, an example of pixel layout of the PVA-mode liquid crystal displaydevice to which the present invention is applied is described withreference to FIG. 53B. The pixel of the PVA-mode liquid crystal displaydevice to which the present invention is applied may include a scan line5321, a video signal line 5322, a capacitor line 5323, a TFT 5324, apixel electrode 5325, a pixel capacitor 5326, and an electrode notchportion 5319.

Since the scan line 5321 is electrically connected to a gate terminal ofthe TFT 5324, it is preferable that the scan line 5321 be formed of thefirst conductive layer 5303.

Since the video signal line 5322 is electrically connected to a sourceterminal or a drain terminal of the TFT 5324, it is preferable that thevideo signal line 5322 be formed of the second conductive layer 5307.Further, since the scan line 5321 and the video signal line 5322 arearranged in matrix, it is preferable that the scan line 5321 and thevideo signal line 5322 be at least formed of conductive layers indifferent layers.

The capacitor line 5323 is a wiring for forming the pixel capacitor 5326by being provided to be parallel to the pixel electrode 5325, and it ispreferable that the capacitor line 5323 be formed of the firstconductive layer 5303. Note that the capacitor line 5323 may be extendedalong the video signal line 5322 so as to surround the video signal line5322 as shown in FIG. 53B. Thus, a phenomenon in which a potential of anelectrode, which is supposed to be held, is changed in accordance withpotential change in the video signal line 5322, namely, a so-calledcross talk can be reduced. Note also that in order to reduce crosscapacitance with the video signal line 5322, the first semiconductorlayer 5305 may be provided in a cross region of the capacitor line 5323and the video signal line 5322 as shown in FIG. 53B.

The TFT 5324 operates as a switch which electrically connects the videosignal line 5322 and the pixel electrode 5325. Note that as shown inFIG. 53B, one of a source region and a drain region of the TFT 5324 maybe provided so as to surround the other of the source region and thedrain region. Thus, wide channel width can be obtained in a small areaand switching capability can be increased. Note also that as shown inFIG. 53B, the gate terminal of the TFT 5324 may be provided so as tosurround the first semiconductor layer 5305.

The pixel electrode 5325 is electrically connected to one of the sourceterminal and the drain terminal of the TFT 5324. The pixel electrode5325 is an electrode for applying signal voltage which is transmittedthrough the video signal line 5322 to the liquid crystal element. Inaddition, the pixel electrode 5325 and the capacitor line 5323 may formthe pixel capacitor 5326. Thus, the pixel electrode 5325 can also have afunction of holding the signal voltage which is transmitted through thevideo signal line 5322. It is preferable that the pixel electrode 5325have a notched portion in a portion where the electrode notch portion5319 does not exist in accordance with the shape of the electrode notchportion 5319 provided to the fourth conductive layer 5313 as shown inFIG. 53B. Thus, since a plurality of regions having different alignmentof the liquid crystal molecules 5318 can be formed, a liquid crystaldisplay device having a wide viewing angle can be obtained. Further, inthe case where the pixel electrode 5325 is formed using a materialhaving light-transmitting properties, a transmissive liquid crystaldisplay device can be obtained. A transmissive liquid crystal displaydevice has high color reproductivity and can display an image with highimage quality. Alternatively, in the case where the pixel electrode 5325is formed using a material having reflectiveness, a reflective liquidcrystal display device can be obtained. A reflective liquid crystaldisplay device has high visibility in a bright environment such asoutside, and can extremely reduce power consumption because a backlightis not necessary. Note that in the case where the pixel electrode 5325is formed using both a material having light-transmitting properties anda material having reflectiveness, a semi-transmissive liquid crystaldisplay device which has advantages of both of the above can beobtained. Note also that in the case where the pixel electrode 5325 isformed using a material having reflectiveness, a surface of the pixelelectrode 5325 may have unevenness. Thus, reflected light is reflecteddiffusely and an advantage that angular dependency of intensitydistribution of reflected light is decreased can be obtained. That is, areflective liquid crystal display device, brightness of which is uniformat any angle, can be obtained.

Next, a lateral electric field-mode liquid crystal display device towhich the present invention is applied is described with reference toFIGS. 54A and 54B. FIGS. 54A and 54B are a cross-sectional view and atop plan view of a pixel in which the present invention is applied toone of pixel structures of a lateral electric field-mode liquid crystaldisplay device which performs switching so that alignment of liquidcrystal molecules is always horizontal to a substrate, in which anelectric field is applied laterally by patterning a pixel electrode 5425and a common electrode 5423 into comb shapes, namely, a so-called IPS(In-Plane-Switching) mode. FIG. 54A is a cross-sectional view of a pixeland FIG. 54B is a top plan view of the pixel. Further, thecross-sectional view of the pixel shown in FIG. 54A corresponds to aline a-a′ in the top plan view of the pixel shown in FIG. 54B. Byapplying the present invention to a liquid crystal display device havingthe pixel structure shown in FIGS. 54A and 54B, a liquid crystal displaydevice having a theoretically wide viewing angle and response speedwhich has small dependency on a gray scale can be obtained.

A pixel structure of an IPS-mode liquid crystal display device isdescribed with reference to FIG. 54A. The liquid crystal display deviceincludes a basic portion which displays an image, which is called aliquid crystal panel. The liquid crystal panel is manufactured asfollows: two processed substrates are attached to each other with a gapof several μm therebetween and a liquid crystal material is injectedbetween the two substrates. In FIG. 54A, the two substrates correspondto a first substrate 5401 and a second substrate 5416. A TFT and a pixelelectrode may be formed over the first substrate; and a light shieldingfilm 5414, a color filter 5415, a spacer 5417, and a second alignmentfilm 5412 may be formed on the second substrate.

Note that the present invention can also be implemented without formingthe TFT over the first substrate 5401. When the present invention isimplemented without forming the TFT, the number of steps is reduced andmanufacturing cost can be reduced. In addition, since the structure issimple, the yield can be improved. On the other hand, when the presentinvention is implemented by forming the TFT, a larger display device canbe obtained.

The TFT shown in FIGS. 54A and 54B is a bottom-gate TFT using anamorphous semiconductor, which has an advantage that it can bemanufactured at low cost by using a large substrate. However, thepresent invention is not limited to this. As a structure of a TFT whichcan be used, there are a channel-etched type, a channel-protective type,and the like as for a bottom-gate TFT. Alternatively, a top-gate typemay be used. Further, not only an amorphous semiconductor but also apolycrystalline semiconductor may be used.

Note that the present invention can also be implemented without formingthe light shielding film 5414 on the second substrate 5416. When thepresent invention is implemented without forming the light shieldingfilm 5414, the number of steps is reduced, so that manufacturing costcan be reduced. In addition, since the structure is simple, the yieldcan be improved. On the other hand, when the present invention isimplemented by forming the light shielding film 5414, a display devicewith little light leakage at the time of black display can be obtained.

Note that the present invention can also be implemented without formingthe color filter 5415 on the second substrate 5416. When the presentinvention is implemented without forming the color filter 5415, thenumber of steps is reduced, so that manufacturing cost can be reduced.In addition, since the structure is simple, the yield can be improved.On the other hand, when the present invention is implemented by formingthe color filter 5415, a display device which can perform color displaycan be obtained.

Note that the present invention can also be implemented by dispersingspherical spacers instead of providing the spacer 5417 on the secondsubstrate 5416. When the present invention is implemented by dispersingthe spherical spacers, the number of steps is reduced, so thatmanufacturing cost can be reduced. In addition, since the structure issimple, the yield can be improved. On the other hand, when the presentinvention is implemented by forming the spacer 5417, a position of thespacer is not varied, so that a distance between the two substrates canbe uniformed and a display device with little display unevenness can beobtained.

Next, as for a process to be performed to the first substrate 5401, themethod described in FIGS. 51A and 51B may be used; therefore,description is omitted. Here, the first substrate 5401, a firstinsulating film 5402, a first conductive layer 5403, a second insulatingfilm 5404, a first semiconductor layer 5405, a second semiconductorlayer 5406, a second conductive layer 5407, a third insulating film5408, a third conductive layer 5409, and a first alignment film 5410correspond to the first substrate 5101, the first insulating film 5102,the first conductive layer 5103, the second insulating film 5104, thefirst semiconductor layer 5105, the second semiconductor layer 5106, thesecond conductive layer 5107, the third insulating film 5108, the thirdconductive layer 5109, and the first alignment film 5110 in FIG. 51A,respectively. Note that the third conductive layer 5409 on the firstsubstrate 5401 side may be patterned into two comb-shapes which engagewith each other. In addition, one of the comb-shaped electrodes may beelectrically connected to one of a source terminal and a drain terminalof the TFT 5424, and the other of the comb-shaped electrodes may beelectrically connected to the common electrode 5423. Thus, a lateralelectric field can be effectively applied to liquid crystal molecules5418.

The first substrate 5401 formed as described above is attached to thesecond substrate 5416 provided with the light shielding film 5414, thecolor filter 5415, the spacer 5417, and the second alignment film 5412with a sealant with a gap of several μm therebetween, and then, a liquidcrystal material is injected between the two substrates, so that theliquid crystal panel can be manufactured. Note that although not shownin the drawings, a conductive layer may be formed on the secondsubstrate 5416 side. By forming the conductive layer on the secondsubstrate 5416 side, an adverse effect of electromagnetic wave noisefrom outside can be reduced.

Next, a feature of the pixel structure of the IPS-mode liquid crystalpanel shown in FIGS. 54A and 54B is described. The liquid crystalmolecules 5418 shown in FIG. 54A are long and thin molecules each havinga major axis and a minor axis. In FIG. 54A, each of the liquid crystalmolecules 5418 is expressed by its length to show a direction of each ofthe liquid crystal molecules. That is, a direction of the major axis ofthe liquid crystal molecule 5418 which is expressed to be long isparallel to the paper, and the direction of the major axis becomescloser to a normal direction of the paper as the liquid crystal molecule5418 is expressed to be shorter. That is, each of the liquid crystalmolecules 5418 shown in FIG. 54A is aligned so that the direction of themajor axis is always horizontal to the substrate. Although FIG. 54Ashows alignment in a condition where an electric field is not applied,when an electric field is applied to each of the liquid crystalmolecules 5418, each of the liquid crystal molecules rotates in ahorizontal plane while the direction of the major axis is kept alwayshorizontal to the substrate. With this state, a liquid crystal displaydevice having a wide viewing angle can be obtained.

Next, an example of pixel layout of an IPS-mode liquid crystal displaydevice to which the present invention is applied is described withreference to FIG. 54B. The pixel of the IPS-mode liquid crystal displaydevice to which the present invention is applied may include a scan line5421, a video signal line 5422, the common electrode 5423, the TFT 5424,and the pixel electrode 5425.

Since the scan line 5421 is electrically connected to a gate terminal ofthe TFT 5424, it is preferable that the scan line 5421 be formed of thefirst conductive layer 5403.

Since the video signal line 5422 is electrically connected to the sourceterminal or the drain terminal of the TFT 5424, it is preferable thatthe video signal line 5422 be formed of the second conductive layer5407. Further, since the scan line 5421 and the video signal line 5422are arranged in matrix, it is preferable that the scan line 5421 and thevideo signal line 5422 be at least formed of conductive layers indifferent layers. Note that as shown in FIG. 54B, the video signal line5422 may be formed so as to be bent along with the shapes of the pixelelectrode 5425 and the common electrode 5423 in the pixel. Thus, anaperture ratio of the pixel can be increased, so that efficiency of theliquid crystal display device can be improved.

The common electrode 5423 is an electrode for generating a lateralelectric field by being provided to be parallel to the pixel electrode5425, and it is preferable that the common electrode 5423 be formed ofthe first conductive layer 5403 and the third conductive layer 5409.Note that the common electrode 5423 may be extended along the videosignal line 5422 so as to surround the video signal line 5422 as shownin FIG. 54B. Thus, a phenomenon in which a potential of an electrode,which is supposed to be held, is changed in accordance with potentialchange in the video signal line 5422, namely, a so-called cross talk canbe reduced. Note also that in order to reduce cross capacitance with thevideo signal line 5422, the first semiconductor layer 5405 may beprovided in a cross region of the common electrode 5423 and the videosignal line 5422 as shown in FIG. 54B.

The TFT 5424 operates as a switch which electrically connects the videosignal line 5422 and the pixel electrode 5425. Note that as shown inFIG. 54B, one of a source region and a drain region of the TFT 5424 maybe provided so as to surround the other of the source region and thedrain region. Thus, wide channel width can be obtained in a small areaand switching capability can be increased. Note also that as shown inFIG. 54B, the gate terminal of the TFT 5424 may be provided so as tosurround the first semiconductor layer 5405.

The pixel electrode 5425 is electrically connected to one of the sourceterminal and the drain terminal of the TFT 5424. The pixel electrode5425 is an electrode for applying signal voltage which is transmittedthrough the video signal line 5422 to the liquid crystal element. Inaddition, the pixel electrode 5425 and the common electrode 5423 mayform a pixel capacitor. Thus, the pixel electrode 5425 can also have afunction of holding the signal voltage which is transmitted through thevideo signal line 5422. Note that each of the pixel electrode 5425 andthe comb-shaped common electrode 5423 may have a bent comb-shape asshown in FIG. 54B. Thus, since a plurality of regions having differentalignment of the liquid crystal molecules 5418 can be formed, a liquidcrystal display device having a wide viewing angle can be obtained. Inaddition, in the case where each of the pixel electrode 5425 and thecomb-shaped common electrode 5423 is formed using a material havinglight-transmitting properties, a transmissive liquid crystal displaydevice can be obtained. A transmissive liquid crystal display device hashigh color reproductivity and can display an image with high imagequality. Alternatively, in the case where each of the pixel electrode5425 and the comb-shaped common electrode 5423 is formed using amaterial having reflectiveness, a reflective liquid crystal displaydevice can be obtained. A reflective liquid crystal display device hashigh visibility in a bright environment such as outside, and canextremely reduce power consumption because a backlight is not necessary.Note that in the case where each of the pixel electrode 5425 and thecomb-shaped common electrode 5423 is formed using both a material havinglight-transmitting properties and a material having reflectiveness, asemi-transmissive liquid crystal display device which has advantages ofboth of the above can be obtained. Note also that in the case where eachof the pixel electrode 5425 and the comb-shaped common electrode 5423 isformed using a material having reflectiveness, a surface of each of thepixel electrode 5425 and the comb-shaped electrode 5423 may haveunevenness. Thus, since reflected light is reflected diffusely, anadvantage that angular dependency of intensity distribution of reflectedlight is decreased can be obtained. That is, a reflective liquid crystaldisplay device, brightness of which is uniform at any angle, can beobtained.

Although the comb-shaped pixel electrode 5425 and the comb-shaped commonelectrode 5423 are both formed of the third conductive layer 5409, apixel structure to which the present invention can apply is not limitedto this and can be selected appropriately. For example, the comb-shapedpixel electrode 5425 and the comb-shaped common electrode 5423 may beboth formed of the second conductive layer 5407; the comb-shaped pixelelectrode 5425 and the comb-shaped common electrode 5423 may be bothformed of the first conductive layer 5403; one of them may be formed ofthe third conductive layer 5409 and the other thereof may be formed ofthe second conductive layer 5407; one of them may be formed of the thirdconductive layer 5409 and the other thereof may be formed of the firstconductive layer 5403; or one of them may be formed of the secondconductive layer 5407 and the other thereof may be formed of the firstconductive layer 5403.

Next, another lateral electric field-mode liquid crystal display deviceto which the present invention is applied is described with reference toFIGS. 55A and 55B. FIGS. 55A and 55B are views of another pixelstructure of a lateral electric field-mode liquid crystal display devicewhich performs switching so that alignment of liquid crystal moleculesis always horizontal to a substrate. More specifically, FIGS. 55A and55B are a cross-sectional view and a top plan view of a pixel of a modein which one of a pixel electrode 5525 and a common electrode 5523 ispatterned into a comb-shape and the other thereof is formed into aplanar-shape in a region overlapping with the comp shape, so that anelectric field is applied laterally, a so-called FFS (Fringe FieldSwitching) mode to which the present invention is applied. FIG. 55A is across-sectional view of a pixel and FIG. 55B is a top plan view of thepixel. Further, the cross-sectional view of the pixel shown in FIG. 55Acorresponds to a line a-a′ in the top plan view of the pixel shown inFIG. 55B. By applying the present invention to a liquid crystal displaydevice having the pixel structure shown in FIGS. 55A and 55B, a liquidcrystal display device having a theoretically wide viewing angle andresponse speed which has small dependency on a gray scale can beobtained.

A pixel structure of an FFS-mode liquid crystal display device isdescribed with reference to FIG. 55A. The liquid crystal display deviceincludes a basic portion which displays an image, which is called aliquid crystal panel. The liquid crystal panel is manufactured asfollows: two processed substrates are attached to each other with a gapof several μm therebetween and a liquid crystal material is injectedbetween the two substrates. In FIG. 55A, the two substrates correspondto a first substrate 5501 and a second substrate 5516. A TFT and a pixelelectrode may be formed over the first substrate, and a light shieldingfilm 5514, a color filter 5515, a spacer 5517, and a second alignmentfilm 5512 may be formed on the second substrate.

Note that the present invention can also be implemented without formingthe TFT over the first substrate 5501. When the present invention isimplemented without forming the TFT, the number of steps is reduced, sothat manufacturing cost can be reduced. In addition, since the structureis simple, a yield can be improved. On the other hand, when the presentinvention is implemented by forming the TFT, a larger display device canbe obtained.

The TFT shown in FIGS. 55A and 55B is a bottom-gate TFT using anamorphous semiconductor, which has an advantage that it can bemanufactured at low cost by using a large substrate. However, thepresent invention is not limited to this. As a structure of a TFT whichcan be used, there are a channel-etched type, a channel-protective type,and the like as for a bottom-gate TFT. Alternatively, a top-gate typemay be used. Further, not only an amorphous semiconductor but also apolycrystalline semiconductor may be used.

Note that the present invention can also be implemented without formingthe light shielding film 5514 on the second substrate 5516. When thepresent invention is implemented without forming the light shieldingfilm 5514, the number of steps is reduced, so that manufacturing costcan be reduced. In addition, since the structure is simple, the yieldcan be improved. On the other hand, when the present invention isimplemented by forming the light shielding film 5514, a display devicewith little light leakage at the time of black display can be obtained.

Note that the present invention can also be implemented without formingthe color filter 5515 on the second substrate 5516. When the presentinvention is implemented without forming the color filter 5515, thenumber of steps is reduced, so that manufacturing cost can be reduced.In addition, since the structure is simple, the yield can be improved.On the other hand, when the present invention is implemented by formingthe color filter 5515, a display device which can perform color displaycan be obtained.

Note that the present invention can also be implemented by dispersingspherical spacers instead of providing the spacer 5517 on the secondsubstrate 5516. When the present invention is implemented by dispersingthe spherical spacers, the number of steps is reduced, so thatmanufacturing cost can be reduced. In addition, since the structure issimple, the yield can be improved. On the other hand, when the presentinvention is implemented by forming the spacer 5517, a position of thespacer is not varied, so that a distance between the two substrates canbe uniformed and a display device with little display unevenness can beobtained.

Next, as for a process to be performed to the first substrate 5501, themethod described in FIGS. 55A and 55B may be used; therefore,description is omitted. Here, the first substrate 5501, a firstinsulating film 5502, a first conductive layer 5503, a second insulatingfilm 5504, a first semiconductor layer 5505, a second semiconductorlayer 5506, a second conductive layer 5507, a third insulating film5508, a third conductive layer 5509, and a first alignment film 5510correspond to the first substrate 5101, the first insulating film 5102,the first conductive layer 5103, the second insulating film 5104, thefirst semiconductor layer 5105, the second semiconductor layer 5106, thesecond conductive layer 5107, the third insulating film 5108, the thirdconductive layer 5109, and the first alignment film 5110 in FIG. 51A,respectively.

However, a fourth insulating film 5519 and a fourth conductive layer5513 may be formed on the first substrate 5501 side, which is differentfrom FIGS. 51A and 51B. More specifically, the fourth insulating film5519 may be formed after the third conductive layer 5509 is patterned;the fourth conductive layer 5513 may be formed after the fourthinsulating film 5519 is patterned so as to form a contact hole; and thefirst alignment film 5510 may be formed after the fourth conductivelayer 5513 is similarly patterned. As materials and processing methodsof the fourth insulating film 5519 and the fourth conductive layer 5513,materials and processing methods which are similar to those of the thirdinsulating film 5508 and the third conductive layer 5509 can be used.Further, the comb-shaped electrode may be electrically connected to oneof a source terminal and a drain terminal of the TFT 5524 and the planarelectrode may be electrically connected to the common electrode 5523.Thus, a lateral electric field can be effectively applied to the liquidcrystal molecules 5518.

The first substrate 5501 formed as described above is attached to thesecond substrate 5516 provided with the light shielding film 5514, thecolor filter 5515, the spacer 5517, and the second alignment film 5512with a sealant with a gap of several μm therebetween, and then, a liquidcrystal material is injected between the two substrates, so that theliquid crystal panel can be manufactured. Note that although not shownin the drawings, a conductive layer may be formed on the secondsubstrate 5516 side. By forming the conductive layer on the secondsubstrate 5516 side, an adverse effect of electromagnetic wave noisefrom outside can be reduced.

Next, a feature of the pixel structure of the FFS-mode liquid crystalpanel shown in FIGS. 55A and 55B is described. The liquid crystalmolecules 5518 shown in FIG. 55A are long and thin molecules each havinga major axis and a minor axis. In FIG. 55A, each of the liquid crystalmolecules 5518 is expressed by its length to show a direction of each ofthe liquid crystal molecules. That is, a direction of the major axis ofthe liquid crystal molecule 5518 which is expressed to be long isparallel to the paper, and the direction of the major axis becomescloser to a normal direction of the paper as the liquid crystal molecule5518 is expressed to be shorter. That is, each of the liquid crystalmolecules 5518 shown in FIG. 55A is aligned so that the direction of themajor axis is always horizontal to the substrate. Although FIG. 55Ashows alignment in a condition where an electric field is not applied,when an electric field is applied to each of the liquid crystalmolecules 5518, each of the liquid crystal molecules rotates in ahorizontal plane while the direction of the major axis is kept alwayshorizontal to the substrate. With this state, a liquid crystal displaydevice having a wide viewing angle can be obtained.

Next, an example of pixel layout of an FFS-mode liquid crystal displaydevice to which the present invention is applied is described withreference to FIG. 55B. The pixel of the FFS-mode liquid crystal displaydevice to which the present invention is applied may include a scan line5521, a video signal line 5522, the common electrode 5523, the TFT 5524,and the pixel electrode 5525.

Since the scan line 5521 is electrically connected to a gate terminal ofthe TFT 5524, it is preferable that the scan line 5521 be formed of thefirst conductive layer 5503.

Since the video signal line 5522 is electrically connected to the sourceterminal or the drain terminal of the TFT 5524, it is preferable thatthe video signal line 5522 be formed of the second conductive layer5507. Further, since the scan line 5521 and the video signal line 5522are arranged in matrix, it is preferable that the scan line 5521 and thevideo signal line 5522 be at least formed of conductive layers indifferent layers. Note that as shown in FIG. 55B, the video signal line5522 may be formed so as to be bent along with the shape of the pixelelectrode 5525 in the pixel. Thus, an aperture ratio of the pixel can beincreased, so that efficiency of the liquid crystal display device canbe improved.

The common electrode 5523 is an electrode for generating a lateralelectric field by being provided to be parallel to the pixel electrode5525, and it is preferable that the common electrode 5523 be formed ofthe first conductive layer 5503 and the third conductive layer 5509.Note that the common electrode 5523 may be formed along the video signalline 5522 as shown in FIG. 55B. Thus, a phenomenon in which a potentialof an electrode, which is supposed to be held, is changed in accordancewith potential change in the video signal line 5522, namely, a so-calledcross talk can be reduced. Note also that in order to reduce crosscapacitance with the video signal line 5522, the first semiconductorlayer 5505 may be provided in a cross region of the common electrode5523 and the video signal line 5522 as shown in FIG. 55B.

The TFT 5524 operates as a switch which electrically connects the videosignal line 5522 and the pixel electrode 5525. Note that as shown inFIG. 55B, one of a source region and a drain region of the TFT 5524 maybe provided so as to surround the other of the source region and thedrain region. Thus, wide channel width can be obtained in a small areaand switching capability can be increased. Note also that as shown inFIG. 55B, the gate terminal of the TFT 5524 may be provided so as tosurround the first semiconductor layer 5505.

The pixel electrode 5525 is electrically connected to one of the sourceterminal and the drain terminal of the TFT 5524. The pixel electrode5525 is an electrode for applying signal voltage which is transmittedthrough the video signal line 5522 to the liquid crystal element. Inaddition, the pixel electrode 5525 and the common electrode 5523 mayform a pixel capacitor. Thus, the pixel electrode 5525 can also have afunction of holding the signal voltage which is transmitted through thevideo signal line 5522. Note that it is preferable that the pixelelectrode 5525 be formed with a bent comb-shape as shown in FIG. 55B.Thus, since a plurality of regions having different alignment of theliquid crystal molecules 5518 can be formed, a liquid crystal displaydevice having a wide viewing angle can be obtained. In addition, in thecase where each of the pixel electrode 5525 and the comb-shaped commonelectrode 5523 is formed using a material having light-transmittingproperties, a transmissive liquid crystal display device can beobtained. A transmissive liquid crystal display device has high colorreproductivity and can display an image with high image quality.Alternatively, in the case where each of the pixel electrode 5525 andthe comb-shaped common electrode 5523 is formed using a material havingreflectiveness, a reflective liquid crystal display device can beobtained. A reflective liquid crystal display device has high visibilityin a bright environment such as outside, and can extremely reduce powerconsumption because a backlight is not necessary. Note that in the casewhere each of the pixel electrode 5525 and the comb-shaped commonelectrode 5523 is formed using both a material having light-transmittingproperties and a material having reflectiveness, a semi-transmissiveliquid crystal display device which has advantages of both of the abovecan be obtained. Note also that in the case where each of the pixelelectrode 5525 and the comb-shaped common electrode 5523 is formed usinga material having reflectiveness, a surface of each of the pixelelectrode 5525 and the comb-shaped electrode 5523 may have unevenness.Thus, since reflected light is reflected diffusely, an advantage thatangular dependency of intensity distribution of reflected light isdecreased can be obtained. That is, a reflective liquid crystal displaydevice, brightness of which is uniform at any angle, can be obtained.

Although the comb-shaped pixel electrode 5525 is formed of the fourthconductive layer 5513 and the planar common electrode 5523 is formed ofthe third conductive layer 5509, a pixel structure to which the presentinvention can apply is not limited to this and can be appropriatelyselected as long as the structure satisfies a certain condition. Morespecifically, the comb-shaped electrode may be located closer to theliquid crystal than the planar electrode seeing from the first substrate5501. This is because a lateral electric field is always generated onthe side opposite to the planar electrode seeing from the comb-shapedelectrode. That is, this is because the comb-shaped electrode isnecessary to be located closer to the liquid crystal than the planarelectrode in order to apply the lateral electric field to the liquidcrystal.

In order to satisfy this condition, for example, the comb-shapedelectrode may be formed of the fourth conductive layer 5513 and theplanar electrode may be formed of the third conductive layer 5509; thecomb-shaped electrode may be formed of the fourth conductive layer 5513and the planar electrode may be formed of the second conductive layer5507; the comb-shaped electrode may be formed of the fourth conductivelayer 5513 and the planar electrode may be formed of the firstconductive layer 5503; the comb-shaped electrode may be formed of thethird conductive layer 5509 and the planar electrode may be formed ofthe second conductive layer 5507; the comb-shaped electrode may beformed of the third conductive layer 5509 and the planar electrode maybe formed of the first conductive layer 5503; or the comb-shapedelectrode may be formed of the second conductive layer 5507 and theplanar electrode may be formed of the first conductive layer 5503.Although the comb-shaped electrode is electrically connected to one ofthe source region and the drain region of the TFT 5524 and the planarelectrode is electrically connected to the common electrode 5523, theconnections may be reversed. In that case, the planar electrode may beformed individually for each pixel.

Note that as an operation mode of a liquid crystal element included in aliquid crystal display device of the present invention, a TN (TwistedNematic) mode, an IPS (In-Plane-Switching) mode, an FFS (Fringe FieldSwitching) mode, an MVA (Multi-domain Vertical Alignment) mode, a PVA(Patterned Vertical Alignment) mode, an ASM (Axially Symmetric alignedMicro-cell) mode, an OCB (Optical Compensated Bend) mode, an FLC(Ferroelectric Liquid Crystal) mode, an AFLC (AntiFerroelectric LiquidCrystal) mode, a PDLC (Polymer Dispersed Liquid Crystal) mode, or thelike can be freely used.

By applying the structure of the display device shown in theaforementioned embodiment mode to a liquid crystal display device,deterioration in characteristics of a transistor can be suppressed.Therefore, a malfunction of a shift register caused by deterioration incharacteristics of the transistor can be prevented. In addition, adisplay defect of the liquid crystal display device caused by themalfunction of the shift register can be suppressed.

Note that the pixel structure shown in this embodiment mode can befreely combined with the structures of the display devices shown inother embodiment modes in this specification. In addition, the pixelstructure shown in this embodiment mode can be freely combined.

Embodiment Mode 10

In this embodiment mode, an example of a pixel included in the displaydevice shown in Embodiment Modes 1 to 8 is described, which is differentfrom Embodiment Mode 9.

A pixel structure of FIG. 65A is described. A pixel circuit shown inFIG. 65A includes a capacitor 6500, a first transistor 6501, a secondtransistor 6502, and a display element 6521. A pixel is connected to afirst wiring 6511, a second wiring 6512, and a third wiring 6513. In thedisplay element 6521, a light-emitting layer is interposed between apixel electrode and an opposite electrode 6522. For the display element6521, an EL element in which a current flows from the pixel electrode tothe opposite electrode 6522 can be used. Note that the first wiring 6511may be called a signal line; the second wiring 6512 may be called apower supply line; and the third wiring 6513 may be called a scan line.The first transistor 6501 may be called a driving transistor; and thesecond transistor 6502 may be called a selection transistor.

The case where a light-emitting element such as an EL element is used asthe display element 6521 is described.

Note that the transistors 6501 and 6502 are N-channel transistors in thedrawing; however, they may be P-channel transistors. In Embodiment Modes1 to 4, N-channel transistors are preferably used as the transistors6501 and 6502. It is because simplification of a manufacturing process,reduction in manufacturing cost, and improvement in yield can berealized since amorphous silicon can be used as a semiconductor layer ofa transistor. Further, it is because a semiconductor device such as alarge display panel can be formed. Even when polysilicon or singlecrystalline silicon is used as a semiconductor layer of a transistor,simplification of a manufacturing process can be realized. In addition,in Embodiment Modes 5 to 8, P-channel transistors are preferably used asthe transistors 6501 and 6502. It is because simplification of amanufacturing process, reduction in manufacturing cost, and improvementin yield can be realized.

Note that the first wiring 6511 corresponds to any one of the signallines S1 to Sm shown in each display device in FIGS. 9, 11, 12, and 44.The third wiring 6513 corresponds to any one of the scan lines G1 to Gnshown in each display device in FIGS. 9, 11, 12, and 44.

Note also that the second wiring 6512 is not shown in FIGS. 9, 11, 12,and 44; however, as described above, it may be added to FIGS. 9, 11, 12,and 44 if needed.

A first terminal of the first transistor 6501 is connected to the secondwiring 6512, and a second terminal of the first transistor 6501 isconnected to the pixel electrode of the display element 6521. A firstterminal of the second transistor 6502 is connected to the first wiring6511, a second terminal of the second transistor 6502 is connected to agate terminal of the first transistor 6501, and a gate terminal of thesecond transistor 6502 is connected to the third wiring 6513. A firstelectrode of the capacitor 6500 is connected to the second wiring 6512,and a second electrode of the capacitor 6500 is connected to the gateterminal of the first transistor 6501.

The capacitor 6500 has a function to hold a gate terminal voltage of thefirst transistor 6501. Accordingly, although the capacitor 6500 isconnected between the first transistor 6501 and the second wiring 6512,the invention is not limited thereto. It is acceptable as long as thecapacitor 6500 is provided to hold the gate terminal voltage of thefirst transistor 6501, and it may be connected to the third wiring 6513of another pixel (e.g., a pixel of a previous row). Further, thecapacitor 6500 may be omitted when gate capacitance of the firsttransistor 6501 is used.

As an operation method, the third wiring 6513 is selected, the secondtransistor 6502 is turned on, and video signals are input from the firstwiring 6511 to the capacitor 6500 and the gate terminal of the firsttransistor 6501. Thus, the first transistor 6501 supplies a current inaccordance with a gate-source voltage thereof to the display element6521, so that the display element 6521 emits light.

As a driving method of the display device for expressing a gray scale,there are an analog gray scale method and a digital gray scale method.The analog gray scale method includes a method which controls emissionintensity of a display element in an analog manner and a method whichcontrols a light-emitting period of a display element in an analogmanner. In the analog gray scale method, the method which controlsemission intensity of a display element in an analog manner is oftenused. On the other hand, in the digital gray scale method, a gray scaleis expressed by controlling on/off of a display element in a digitalmanner. In the case of the digital gray scale method, there is anadvantage of high noise resistance since data can be processed with adigital signal; however, since the digital driving method has only twostates of a light-emitting state and a non-light-emitting state, thedigital driving method can display only two gray scales alone.Accordingly, multi-gray scale display has been realized by combiningwith another method. As a technique for multi-gray scale display, thereare an area gray scale method in which a light-emitting area of a pixelis weighted and selected to perform gray scale display and a time grayscale method in which a light-emitting period is weighted and selectedto perform gray scale display.

When the digital gray scale method and the time gray scale method arecombined, one frame period is divided into a plurality of subframeperiods (SFn) as shown in FIG. 68. Each subframe period includes anaddress period (Ta) having an initialization period, a threshold voltagewriting period, and a data writing period, and a light-emitting period(Ts). Note that the number of the subframe periods provided in one frameperiod corresponds to the number of display bits n. In addition, in oneframe period, a ratio of length of light-emitting periods in respectivesubframe period is set to 2(n−1):2(n−2): . . . :2:1. Light emission ornon-light emission of a display element is selected in eachlight-emitting period, and a gray scale is expressed by utilizingdifference in total time in one frame period in which the displayelement emits light. In one frame period, luminance is high when thetotal light-emitting time is long, and luminance is low when the totallight-emitting time is short. FIG. 68 shows an example of a 4-bit grayscale, in which one frame period is divided into four subframe periodsand 2⁴=16 gray scale levels can be expressed by combining light-emittingperiods. Note that a gray scale can be expressed even when the ratio oflength of the light-emitting periods is not a power-of-two ratio.Further, a subframe period may be further divided.

Note that when multi-gray scale display is realized by using the timegray scale method as described above, length of the light-emittingperiod of a lower-order bit is short; therefore, when data writingoperation of the next subframe period is started immediately aftertermination of the light-emitting period, it overlaps with data writingoperation of a previous subframe period, so that normal operation cannotbe performed. Accordingly, a third transistor 6503 is provided betweenthe gate terminal of the first transistor 6501 and the third wiring 6513as shown in FIG. 65B; and the third transistor 6503 is tuned on in partof the light-emitting period and the first transistor 6501 is forced toturn off, so that an erasing period that forcibly makes anon-light-emitting state is provided, and thus, light emission havingshorter length than data writing periods necessary for all rows can beexpressed. Note that on/off of the third transistor 6503 is controlledby a fourth wiring 6514. Accordingly, it is needless to say that thestructure shown in FIG. 65B is particularly effective in the analog grayscale method, but is also effective in the method combining the digitalgray scale method and the time gray scale method. Note that since it isonly necessary that a current do not flow to the display element inorder to obtain the non-light-emitting state, the non-light-emittingstate can be obtained by, for example, lowering a potential of thesecond wiring 6512 as well as by turning off the first transistor 6501as described above. Alternatively, a switch may further be providedbetween the first transistor 6501 and the second wiring 6512, and thefirst transistor 6501 and the second wiring 6512 may be made not to beelectrically connected by using the switch, so that a non-light-emittingstate can be obtained. Further, a switch may further be provided betweenthe first transistor 6501 and the pixel electrode of the display element6521 and a current stops flowing to the display element 6521 by usingthe switch, so that a non-light-emitting state can be obtained.

Next, a structure of a pixel, which is different from FIGS. 65A and 65Bis described with reference to FIG. 66.

The pixel structure of FIG. 66 is described. A pixel circuit shown inFIG. 66 includes a capacitor 6600, a first transistor 6601, a secondtransistor 6602, a third transistor 6603, and a display element 6621. Apixel is connected to a first wiring 6611, a second wiring 6612, a thirdwiring 6613, and a fourth wiring 6614. The display element 6621 isinterposed between a pixel electrode and an opposite electrode 6622. Forthe display element 6621, an EL element in which a current flows fromthe pixel electrode to the opposite electrode 6622 can be used. Notethat the first wiring 6611 may be called a signal line; the secondwiring 6612 may be called a power supply line; and the third wiring 6613and the fourth wiring 6614 may be called first and second scan lines.The first transistor 6601 may be called a driving transistor; and thesecond transistor 6602 and the third transistor 6603 may be called firstand second switching transistors.

The case where a light-emitting element such as an EL element is used asthe display element 6621 is described.

Note that the first, second, and third transistors 6601, 6602, and 6603are N-channel transistors in the drawing; however, they may be P-channeltransistors. In Embodiment Modes 1 to 4, N-channel transistors arepreferably used as the first, second, and third transistors 6601, 6602,and 6603. It is because simplification of a manufacturing process,reduction in manufacturing cost, and improvement in yield can berealized since amorphous silicon can be used as a semiconductor layer ofa transistor. Further, it is because a semiconductor device such as alarge display panel can be formed. Even when polysilicon or singlecrystalline silicon is used as a semiconductor layer of a transistor,simplification of a manufacturing process can be realized. In addition,in Embodiment Modes 5 to 8, P-channel transistors are preferably used asthe first, second, and third transistors 6601, 6602, and 6603. It isbecause simplification of a manufacturing process, reduction inmanufacturing cost, and improvement in yield can be realized.

Note that the first wiring 6611 corresponds to any one of the signallines S1 to Sm shown in each display device in FIGS. 9, 11, 12, and 44.The third wiring 6613 corresponds to any one of the scan lines G1 to Gnshown in each display device in FIGS. 9, 11, 12, and 44.

Note that the second and fourth wirings 6612 and 6614 are not shown inFIGS. 9, 11, 12, and 44; however, as described above, they may be addedto FIGS. 9, 11, 12, and 44 if needed.

A first terminal of the first transistor 6601 is connected to the secondwiring 6612, and a second terminal of the first transistor 6601 isconnected to the pixel electrode of the display element 6621. A firstterminal of the second transistor 6602 is connected to the first wiring6611, a second terminal of the second transistor 6602 is connected tothe pixel electrode of the display element 6621, and a gate terminal ofthe second transistor 6602 is connected to the third wiring 6613. Afirst terminal of the third transistor 6603 is connected to the secondwiring 6612, a second terminal of the third transistor 6603 is connectedto the gate terminal of the first transistor 6601, and a gate terminalof the third transistor 6603 is connected to the fourth wiring 6614. Afirst electrode of the capacitor 6600 is connected to the gate terminalof the first transistor 6601, and a second electrode of the capacitor6600 is connected to the pixel electrode of the display element 6621.

As a driving method, the third wiring 6613 and the fourth wiring 6614are selected, the second transistor 6602 and the third transistor 6603are turned on, and a potential of the second wiring 6612 is lowered toapproximately the same potential as the opposite electrode 6622.Thereafter, a current corresponding to a video signal is supplied (thevideo signal is input) from the second wiring 6612 to the first wiring6611. Thus, a gate terminal voltage of the first transistor 6601 becomesa value corresponding to the video signal, and at this time, agate-source voltage (potential difference between the gate terminal andthe second terminal) of the first transistor 6601 is held in thecapacitor 6600. Thereafter, the second transistor 6602 and the thirdtransistor 6603 are turned off, and the potential of the second wiring6612 is increased, so that a current starts flowing to the displayelement 6621. At this time, the gate-source voltage of the firsttransistor 6601 is held at the potential corresponding to the videosignal by the capacitor 6600; therefore, a current of the video signaland the current flowing to the display element 6621 become the samevalue. Thus, the display element 6621 emits light with a luminancecorresponding to the video signal.

Next, a structure of a pixel, which is different from FIG. 66 isdescribed with reference to FIG. 67.

The pixel structure of FIG. 67 is described. A pixel circuit shown inFIG. 67 includes a capacitor 6700, a first transistor 6701, a secondtransistor 6702, a third transistor 6703, a fourth transistor 6704, anda display element 6721. A pixel is connected to a first wiring 6711, asecond wiring 6712, a third wiring 6713, a fourth wiring 6714, and afifth wiring 6715. In the display element 6721, a light-emitting layeris interposed between a pixel electrode and an opposite electrode 6722.For the display element 6621, an EL element in which a current flowsfrom the pixel electrode to the opposite electrode 6722 can be used.Note that the first wiring 6711 may be called a signal line; the secondwiring 6712 may be called a power supply line; the third wiring 6713 andthe fourth wiring 6714 may be called first and second scan lines; andthe fifth wiring 6715 may be called a storage capacitor line. The firsttransistor 6701 and the second transistor 6702 may be called first andsecond driving transistors; and the third transistor 6703 and the fourthtransistor 6704 may be called first and second switching transistors.Note that the first transistor 6701 and the second transistor 6702 arecoupled to each other, so that a so-called current mirror structure isprovided.

The case where a light-emitting element such as an EL element is used asthe display element 6621 is described.

Note that the first, second, third, and fourth transistors 6701, 6702,6703, and 6704 are N-channel transistors in the drawing; however, theymay be P-channel transistors. In Embodiment Modes 1 to 4, N-channeltransistors are preferably used as the first, second, third, and fourthtransistors 6701, 6702, 6703, and 6704. It is because simplification ofa manufacturing process, reduction in manufacturing cost, andimprovement in yield can be realized since amorphous silicon can be usedas a semiconductor layer of a transistor. Further, it is because asemiconductor device such as a large display panel can be formed. Evenwhen polysilicon or single crystalline silicon is used as asemiconductor layer of a transistor, simplification of a manufacturingprocess can be realized. In addition, in Embodiment Modes 5 to 8,P-channel transistors are preferably used as the first, second, third,and fourth transistors 6701, 6702, 6703, and 6704. It is becausesimplification of a manufacturing process, reduction in manufacturingcost, and improvement in yield can be realized.

Note that the first wiring 6711 corresponds to any one of the signallines S1 to Sm shown in each display device in FIGS. 9, 11, 12, and 44.The third wiring 6713 corresponds to any one of the scan lines G1 to Gnshown in each display device in FIGS. 9, 11, 12, and 44.

Note that the second, fourth, and fifth wirings 6712, 6714, and 6715 arenot shown in FIGS. 9, 11, 12, and 44; however, as described above, theymay be added to FIGS. 9, 11, 12, and 44 if needed.

A first terminal of the first transistor 6701 is connected to the secondwiring 6712, and a second terminal of the first transistor 6701 isconnected to the pixel electrode of the display element 6721. A firstterminal of the second transistor 6702 is connected to a second terminalof the third transistor 6703, and a second terminal of the secondtransistor 6702 is connected to the pixel electrode of the displayelement 6721. A first terminal of the third transistor 6703 is connectedto a gate terminal of the first transistor 6701 and a gate terminal ofthe second transistor 6702, and a gate terminal of the third transistor6703 is connected to the fourth wiring 6714. A first terminal of thefourth transistor 6704 is connected to the first wiring 6711, a secondterminal of the fourth transistor 6704 is connected to the gate terminalof the first transistor 6701 and the gate terminal of the secondtransistor 6702, and a gate terminal of the fourth transistor 6704 isconnected to the third wiring 6713. A first electrode of the capacitor6700 is connected to the fifth wiring 6715, and a second electrode ofthe capacitor 6700 is connected to the gate terminal of the firsttransistor 6701 and the gate terminal of the second transistor 6702.

Note that the capacitor 6700 has a function to hold gate terminalvoltages of the first transistor 6701 and the second transistor 6702.Accordingly, although the capacitor 6700 is connected between the fifthwiring 6715 and the gate terminals of the first transistor 6701 and thesecond transistor 6702; the invention is not limited thereto. It isacceptable as long as the capacitor 6700 is provided to hold the gateterminal voltages of the first transistor 6701 and the second transistor6702, and it may be connected to the third wiring 6713 of another pixel(e.g., a pixel of a previous row). Further, the capacitor 6700 may beomitted when gate capacitance of the first transistor 6701 and thesecond transistor 6702 is used.

As a driving method, the third wiring 6713 and the fourth wiring 6714are selected, and the third transistor 6703 and the fourth transistor6704 are turned on. Thereafter, a current corresponding to a videosignal is supplied (the video signal is input) from the first wiring6711 to the display element 6721. Thus, the gate terminal voltages ofthe first transistor 6701 and the second transistor 6702 become a valuecorresponding to the video signal and are held in the capacitor 6700.Thereafter, the third transistor 6703 and the fourth transistor 6704 areturned off. Then, the first transistor 6701 supplies the currentcorresponding to the video signal to the display element 6721, and thedisplay element 6721 emits light with a luminance corresponding to thevideo signal.

Next, a cross-sectional view of each pixel shown in FIGS. 65A and 65B isdescribed.

FIG. 69A shows a layout example of elements in a pixel including twoTFTs. FIG. 69B is a cross-sectional view along X-X′ in FIG. 69A. Notethat the layout example in FIG. 69A can be applied to the pixel shown inFIG. 65A.

As shown in FIG. 69A, the pixel in the invention may include a first TFT6905, a first wiring 6906, a second wiring 6907, a second TFT 6908, athird wiring 6911, an opposite electrode 6912, a capacitor 6913, a pixelelectrode 6915, a partition wall 6916, an organic conductive film 6917,an organic thin film 6918, and a substrate 6919. Note that it ispreferable that the first TFT 6905 be used as a switching TFT, the firstwiring 6906 as a gate signal line, the second wiring 6907 as a sourcesignal line, the second TFT 6908 as a driving and the third wiring 6911as a current supply line.

As shown in FIG. 69A, it is preferable that a gate electrode of thefirst TFT 6905 be electrically connected to the first wiring 6906, oneof a source terminal or a drain terminal of the first TFT 6905 beelectrically connected to the second wiring 6907, and the other of thesource terminal or the drain terminal of the first TFT 6905 beelectrically connected to a gate electrode of the second TFT 6908 andone electrode of the capacitor 6913. Note that the gate electrode of thefirst TFT 6905 may include a plurality of gate electrodes as shown inFIG. 69A. Accordingly, a leakage current in the off state of the firstTFT 6905 can be reduced.

It is preferable that one of a source terminal or a drain terminal ofthe second TFT 6908 be electrically connected to the third wiring 6911,and the other of the source terminal or the drain terminal of the secondTFT 6908 be electrically connected to the pixel electrode 6915.Accordingly, a current flowing to the pixel electrode 6915 can becontrolled by the second TFT 6908.

The organic conductive film 6917 may be provided over the pixelelectrode 6915, and the organic thin film (organic compound layer) 6918may be further provided thereover. The opposite electrode 6912 may beprovided over the organic thin film (organic compound layer) 6918. Notethat the opposite electrode 6912 may be formed over an entire surface ofall pixels to be commonly connected to all the pixels, or may bepatterned using a shadow mask or the like.

Light emitted from the organic thin film (organic compound layer) 6918is transmitted through either the pixel electrode 6915 or the oppositeelectrode 6912. In this case, in FIG. 69B, the case where light isemitted to the pixel electrode side, that is, a side on which the TFTand the like are formed is referred to as bottom emission; and the casewhere light is emitted to the opposite electrode side is referred to astop emission.

In the case of bottom emission, it is preferable that the pixelelectrode 6915 be formed of a light-transmitting conductive film. In thecase of top emission, it is preferable that the opposite electrode 6912be formed of a light-transmitting conductive film.

In a light-emitting device for color display, EL elements havingrespective light emission colors of RGB may be separately formed, or anEL element with a single color may be formed over an entire surface andlight emission of RGB can be obtained by using a color filter.

Note that the structure shown in FIGS. 69A and 69B are examples, andvarious structures can be employed for a pixel layout, a cross-sectionalstructure, a stacking order of electrodes of an EL element, and thelike, as well as the structures shown in FIGS. 69A and 69B. Further, asa light-emitting layer, various elements such as a crystalline elementsuch as an LED, and an element formed of an inorganic thin film can beused as well as the element formed of the organic thin film shown in thedrawing.

Next, a layout example of elements in a pixel including three TFTs isdescribed with reference to FIG. 70A. FIG. 70B is a cross-sectional viewalong X-X′ in FIG. 70A. Note that the layout example in FIG. 70A can beapplied to the pixel shown in FIG. 65B.

As shown in FIG. 70A, the pixel in the invention may include a substrate7000, a first wiring 7001, a second wiring 7002, a third wiring 7003, afourth wiring 7004, a first TFT 7005, a second TFT 7006, a third TFT7007, a pixel electrode 7008, a partition wall 7011, an organicconductive film 7012, an organic thin film 7013, and an oppositeelectrode 7014. Note that it is preferable that the first wiring 7001 beused as a source signal line, the second wiring 7002 as a gate signalline for writing, the third wiring 7003 as a gate signal line forerasing, the fourth wiring 7004 as a current supply line, the first TFT7005 as a switching TFT, the second TFT 7006 as an erasing TFT, and thethird TFT 7007 as a driving TFT.

As shown in FIG. 70A, it is preferable that a gate electrode of thefirst TFT 7005 be electrically connected to the second wiring 7002, oneof a source terminal or a drain terminal of the first TFT 7005 beelectrically connected to the first wiring 7001, and the other of thesource terminal or the drain terminal of the first TFT 7005 beelectrically connected to a gate electrode of the third TFT 7007. Notethat the gate electrode of the first TFT 7005 may include a plurality ofgate electrodes as shown in FIG. 70A. Accordingly, a leakage current inthe off state of the first TFT 7005 can be reduced.

It is preferable that a gate electrode of the second TFT 7006 beelectrically connected to the third wiring 7003, one of a sourceterminal or a drain terminal of the second TFT 7006 be electricallyconnected to the fourth wiring 7004, and the other of the sourceterminal or the drain terminal of the second TFT 7006 be electricallyconnected to the gate electrode of the third TFT 7007. Note that thegate electrode of the second TFT 7006 may include a plurality of gateelectrodes as shown in FIG. 70A. Accordingly, a leakage current in theoff state of the second TFT 7006 can be reduced.

It is preferable that one of a source terminal or a drain terminal ofthe third TFT 7007 be electrically connected to the fourth wiring 7004,and the other of the source terminal or the drain terminal of the thirdTFT 7007 be electrically connected to the pixel electrode 7008.Accordingly, a current flowing to the pixel electrode 7008 can becontrolled by the third TFT 7007.

The organic conductive film 7012 may be provided over the pixelelectrode 7008, and the organic thin film (organic compound layer) 7013may be further provided thereover. The opposite electrode 7014 may beprovided over the organic thin film (organic compound layer) 7013. Notethat the opposite electrode 7014 may be formed over an entire surface ofall pixels to be commonly connected to all the pixels, or may bepatterned using a shadow mask or the like.

Light emitted from the organic thin film (organic compound layer) 7013is transmitted through either the pixel electrode 7008 or the oppositeelectrode 7014. In this case, in FIG. 70B, the case where light isemitted to the pixel electrode side, that is, a side on which the TFTand the like are formed is referred to as bottom emission; and the casewhere light is emitted to the opposite electrode side is referred to astop emission.

In the case of bottom emission, it is preferable that the pixelelectrode 7008 be formed of a light-transmitting conductive film. In thecase of top emission, it is preferable that the opposite electrode 7014be formed of a light-transmitting conductive film.

In a light-emitting device for color display, EL elements havingrespective light emission colors of RGB may be separately formed, or anEL element with a single color may be formed over an entire surface andlight emission of RGB can be obtained by using a color filter.

Note that the structure shown in FIGS. 70A and 70B are examples, andvarious structures can be employed for a pixel layout, a cross-sectionalstructure, a stacking order of electrodes of an EL element, and thelike, as well as the structure shown in FIGS. 70A and 70B. Further, as alight-emitting layer, various elements such as a crystalline elementsuch as an LED, and an element formed of an inorganic thin film can beused as well as the element formed of the organic thin film shown in thedrawing.

Next, a layout example of elements in a pixel including four TFTs isdescribed with reference to FIG. 71A. FIG. 71B is a cross-sectional viewalong X-X′ in FIG. 71A.

As shown in FIG. 71A, the pixel in the invention may include a substrate7100, a first wiring 7101, a second wiring 7102, a third wiring 7103, afourth wiring 7104, a first TFT 7105, a second TFT 7106, a third TFT7107, a fourth TFT 7108, a pixel electrode 7109, a fifth wiring 7111, asixth wiring 7112, a partition wall 7121, an organic conductive film7122, an organic thin film 7123, and an opposite electrode 7124. Notethat it is preferable that the first wiring 7101 be used as a sourcesignal line, the second wiring 7102 as a gate signal line for writing,the third wiring 7103 as a gate signal line for erasing, the fourthwiring 7104 as a signal line for reverse biasing, the first TFT 7105 asa switching TFT, the second TFT 7106 as an erasing TFT, the third TFT7107 as a driving TFT, the fourth TFT 7108 as a TFT for reverse bias,the fifth wiring 7111 as a current supply line, and the sixth wiring7112 as a power supply line for reverse biasing.

As shown in FIG. 71A, it is preferable that a gate electrode of thefirst TFT 7105 be electrically connected to the second wiring 7102, oneof a source terminal or a drain terminal of the first TFT 7105 beelectrically connected to the first wiring 7101, and the other of thesource terminal or the drain terminal of the first TFT 7105 beelectrically connected to a gate electrode of the third TFT 7107. Notethat the gate electrode of the first TFT 7105 may include a plurality ofgate electrodes as shown in FIG. 71A. Accordingly, a leakage current inthe off state of the first TFT 7105 can be reduced.

It is preferable that a gate electrode of the second TFT 7106 beelectrically connected to the third wiring 7103, one of a sourceterminal or a drain terminal of the second TFT 7106 be electricallyconnected to the fifth wiring 7111, and the other of the source terminalor the drain terminal of the second TFT 7106 be electrically connectedto the gate electrode of the third TFT 7107. Note that the gateelectrode of the second TFT 7106 may include a plurality of gateelectrodes as shown in FIG. 71A. Accordingly, a leakage current in theoff state of the second TFT 7106 can be reduced.

It is preferable that one of a source terminal or a drain terminal ofthe third TFT 7107 be electrically connected to the fifth wiring 7111,and the other of the source terminal or the drain terminal of the thirdTFT 7107 be electrically connected to the pixel electrode 7109.Accordingly, a current flowing to the pixel electrode 7109 can becontrolled by the third TFT 7107.

It is preferable that a gate electrode of the fourth TFT 7108 beelectrically connected to the fourth wiring 7104, one of a sourceterminal or a drain terminal of the fourth TFT 7108 be electricallyconnected to the sixth wiring 7112, and the other of the source terminalor the drain terminal of the fourth TFT 7108 be electrically connectedto the pixel electrode 7109. Accordingly, a potential of the pixelelectrode 7109 can be controlled by the fourth TFT 7108, so that areverse bias can be applied to a light-emitting element including theorganic conductive film 7122, the organic thin film 7123 and the like.When a reverse bias is applied to a light-emitting element including theorganic conductive film 7122, the organic thin film 7123, and the like,reliability of the light-emitting element can be significantly improved.

For example, it is known that when a light-emitting element of whichluminance half-decay time is approximately 400 hours in the case ofdriving with a direct-current voltage (3.65 V) is driven with analternating current voltage (forward bias: 3.7 V, reverse bias: 1.7 V, aduty ratio of 50%, and an alternating current frequency of 60 Hz),luminance half-decay time becomes 700 hours or more.

The organic conductive film 7122 may be provided over the pixelelectrode 7109, and the organic thin film (organic compound layer) 7123may be further provided thereover. The opposite electrode 7124 may beprovided over the organic thin film (organic compound layer) 7123. Notethat the opposite electrode 7124 may be formed over an entire surface ofall pixels to be commonly connected to all the pixels, or may bepatterned using a shadow mask or the like.

Light emitted from the organic thin film (organic compound layer) 7123is transmitted through either the pixel electrode 7109 or the oppositeelectrode 7124. In this case, in FIG. 71B, the case where light isemitted to the pixel electrode side, that is, a side on which the TFTand the like are formed is referred to as bottom emission; and the casewhere light is emitted to the opposite electrode side is referred to astop emission.

In the case of bottom emission, it is preferable that the pixelelectrode 7109 be formed of a light-transmitting conductive film. In thecase of top emission, it is preferable that the opposite electrode 7124be formed of a light-transmitting conductive film.

In a light-emitting device for color display, EL elements havingrespective light emission colors of RGB may be separately formed, or anEL element with a single color may be formed over an entire surface andlight emission of RGB can be obtained by using a color filter.

Note that the structure shown in FIGS. 71A and 71B are examples, andvarious structures can be employed for a pixel layout, a cross-sectionalstructure, a stacking order of electrodes of an EL element, and thelike, as well as the structure shown in FIGS. 71A and 71B. Further, as alight-emitting layer, various elements such as a crystalline elementsuch as an LED, and an element formed of an inorganic thin film can beused as well as the element formed of the organic thin film shown in thedrawing.

Next, a structure of an EL element which can be applied to the inventionis described.

An EL element which can be applied to the invention may have a structureincluding a layer (mixed layer) in which a plurality of materials amonga hole injecting material, a hole transporting material, alight-emitting material, an electron transporting material, an electroninjecting material, and the like are mixed (hereinafter referred to as amixed junction type EL element) as well as a stacked-layer structurewhere a hole injecting layer formed of a hole injecting material, a holetransporting layer formed of a hole transporting material, alight-emitting layer formed of a light-emitting material, an electrontransporting layer formed of an electron transporting material, anelectron injecting layer formed of an electron injecting material, andthe like are clearly distinguished.

FIGS. 72A to 72E are schematic views each showing a structure of a mixedjunction type EL element. In FIGS. 72A to 72E, reference numeral 7201indicates an anode of the EL element; 7202 indicates a cathode of the ELelement; and a layer interposed between the anode 7201 and the cathode7202 corresponds to an EL layer.

In FIG. 72A, the EL layer can have a structure where the EL layerincludes a hole transporting region 7203 formed of a hole transportingmaterial and an electron transporting region 7204 formed of an electrontransporting material, the hole transporting region 7203 is closer tothe anode than the electron transporting region 7204, and a mixed region7205 including both the hole transporting material and the electrontransporting material is provided between the hole transporting region7203 and the electron transporting region 7204.

In this case, in the direction from the anode 7201 to the cathode 7202,a concentration of the hole transporting material in the mixed region7205 may be decreased and a concentration of the electron transportingmaterial in the mixed region 7205 may be increased.

Note that in the aforementioned structure, a ratio of concentrations ofeach functional material may be changed (a concentration gradient may beformed) in the mixed region 7205 including both the hole transportingmaterial and the electron transporting material, without including thehole transporting layer 7203 formed of only the hole transportingmaterial. Alternatively, a ratio of concentrations of each functionalmaterial may be changed (a concentration gradient may be formed) in themixed region 7205 including both the hole transporting material and theelectron transporting material, without including the hole transportinglayer 7203 formed of only the hole transporting material and theelectron transporting layer 7204 formed of only the electrontransporting material. A ratio of concentrations may be changeddepending on a distance from the anode or the cathode. Further, theratio of concentrations may be changed continuously. The concentrationgradient can be freely set.

A region 7206 to which a light-emitting material is added is included inthe mixed region 7205. A light emission color of the EL element can becontrolled by the light-emitting material. Further, carriers can betrapped by the light-emitting material. As the light-emitting material,various fluorescent dyes as well as a metal complex having a quinolineskeleton, a benzooxazole skeleton, or a benzothiazole skeleton can beused. The light emission color of the EL element can be controlled byadding the light-emitting material.

As the anode 7201, an electrode material having a high work function ispreferably used in order to inject holes efficiently. For example, atransparent electrode formed of indium tin oxide (ITO), indium zincoxide (IZO), ZnO, SnO₂, In₂O₃, or the like can be used. When alight-emitting property is not needed, the anode 7201 may be formed ofan opaque metal material.

As the hole transporting material, an aromatic amine compound or thelike can be used.

As the electron transporting material, a metal complex having aquinoline derivative, 8-quinolinol, or a derivative thereof as a ligand(especially tris(8-quinolinolato)aluminum (Alq₃)), or the like can beused.

As the cathode 7202, an electrode material having a low work function ispreferably used in order to inject electrons efficiently. A metal suchas aluminum, indium, magnesium, silver, calcium, barium, or lithium canbe used by itself. Alternatively, an alloy of the aforementioned metalor an alloy of the aforementioned metal and another metal may be used.

FIG. 72B is a schematic view of a structure of an EL element, which isdifferent from that of FIG. 72A. Note that the same portions as those inFIG. 72A are denoted by the same reference numerals, and descriptionthereof is omitted.

In FIG. 72B, a region to which a light-emitting material is added is notincluded. However, as a material added to the electron transportingregion 7204, a material (electron-transporting and light-emittingmaterial) having both an electron transporting property and alight-emitting property, for example, tris(8-quinolinolato)aluminum(Alq₃) is used; thus, light emission can be performed.

Alternatively, as a material added to the hole transporting region 7203,a material (hole-transporting and light-emitting material) having both ahole transporting property and a light-emitting property may be used.

FIG. 72C is a schematic view of a structure of an EL element, which isdifferent from those of FIGS. 72A and 72B. Note that the same portionsas those in FIGS. 72A and 72B are described by the same referencenumerals, and description thereof is omitted.

In FIG. 72C, a region 7207 including the mixed region 7205 is provided,to which a hole blocking material having a larger energy differencebetween the highest occupied molecular orbital and the lowest unoccupiedmolecular orbital than the hole transporting material is added. Theregion 7207 to which the hole blocking material is added is providedcloser to the cathode 7202 than the region 7206 to which thelight-emitting material is added in the mixed region 7205; thus, arecombination rate of carriers and light emission efficiency can beincreased. The aforementioned structure provided with the region 7207 towhich the hole blocking material is added is especially effective in anEL element which utilizes light emission (phosphorescence) by a tripletexciton.

FIG. 72D is a schematic view of a structure of an EL element, which isdifferent from those of FIGS. 72A to 72C. Note that the same portions asthose in FIGS. 72A to 72C are described by the same reference numerals,and description thereof is omitted.

In FIG. 72D, a region 7208 including the mixed region 7205 is provided,to which an electron blocking material having a larger energy differencebetween the highest occupied molecular orbital and the lowest unoccupiedmolecular orbital than the electron transporting material is added. Theregion 7208 to which the electron blocking material is added is providedcloser to the anode 7201 than the region 7206 to which thelight-emitting material is added in the mixed region 7205; thus, arecombination rate of carriers and light emission efficiency can beincreased. The aforementioned structure provided with the region 7208 towhich the electron blocking material is added is especially effective inan EL element which utilizes light emission (phosphorescence) by atriplet exciton.

FIG. 72E is a schematic view of a structure of a mixed junction type ELelement, which is different from those of FIGS. 72A to 72D. FIG. 72Eshows an example of a structure where a region 7209 to which a metalmaterial is added is included in part of an EL layer in contact with anelectrode of the EL element. In FIG. 72E, the same portions as those inFIGS. 72A to 72D are described by the same reference numerals, anddescription thereof is omitted. In FIG. 72E, MgAg (Mg—Ag alloy) may beused as the cathode 7202, and the region 7209 to which Al (aluminum)alloy is added may be included in a region which is in contact with thecathode 7202 of the region 7204 to which the electron transportingmaterial is added, for example. By the aforementioned structure,oxidation of the cathode can be prevented, and electron injectionefficiency from the cathode can be increased. Therefore, the lifetime ofthe mixed junction type EL element can be extended, and a drivingvoltage can be lowered.

As a method of forming the aforementioned mixed junction type ELelement, a co-evaporation method or the like can be used.

In the mixed junction type EL elements as shown in FIGS. 72A to 72E, aclear interface between the layers does not exist, and chargeaccumulation can be reduced. Thus, the lifetime of the EL element can beextended, and a driving voltage can be lowered.

Note that the structures shown in FIGS. 72A to 72E can be implemented infree combination with each other.

Note that a structure of the mixed junction type EL element is notlimited to those described above. A known structure may be freely used.

Note that an organic material which forms an EL layer of an EL elementmay be a low molecular material or a high molecular material, and bothof the materials may be used. When a low molecular material is used asan organic compound material, a film can be formed by an evaporationmethod. On the other hand, when a high molecular material is used as theEL layer, the high molecular material is dissolved in a solvent and afilm can be formed by a spin coating method or an ink-jet method.

In addition, the EL layer may be formed of a middle molecular material.In this specification, a middle molecule organic light-emitting materialdenotes an organic light-emitting material without a sublimationproperty and with a polymerization degree of approximately 20 or less.When a middle molecular material is used as the EL layer, a film can beformed by an ink-jet method or the like.

Note that a low molecular material, a high molecular material, and amiddle molecular material may be used in combination.

In addition, an EL element may utilize either light emission(fluorescence) by a singlet exciton or light emission (phosphorescence)by a triplet exciton.

Next, an evaporation device for forming a display device to which theinvention can be applied is described with reference to the drawing.

A display device to which the invention can be applied may bemanufactured by forming an EL layer. The EL layer is formed so that amaterial which exhibits electroluminescence is included in at least partthereof. The EL layer may be formed of a plurality of layers havingdifferent functions. In this case, the EL layer may be formed of acombination of layers having different functions, which are also calleda hole injecting and transporting layer, a light-emitting layer, anelectron injecting and transporting layer, and the like.

FIG. 73 shows a structure of an evaporation device for forming an ELlayer over an element substrate provided with a transistor. In theevaporation device, a plurality of treatment chambers are connected totransfer chambers 7360 and 7361. Each treatment chamber includes aloading chamber 7362 for supplying a substrate, an unloading chamber7363 for collecting the substrate, a heat treatment chamber 7368, aplasma treatment chamber 7372, deposition treatment chambers 7369, 7370,7371, 7373, 7374, and 7375 for depositing an EL material, and adeposition treatment chamber 7376 for forming a conductive film formedof aluminum or formed using aluminum as its main component as oneelectrode of an EL element. Further, gate valves 7377 a to 7377 l areprovided between the transfer chambers and the treatment chambers, sothat the pressure in each treatment chamber can be controlledindependently, and cross contamination between the treatment chambers isprevented.

A substrate introduced into the transfer chamber 7360 from the loadingchamber 7362 is transferred to a predetermined treatment chamber by anarm type transfer means 7366 capable of rotating. Further, the substrateis transferred from a certain treatment chamber to another treatmentchamber by the transfer means 7366. The transfer chambers 7360 and 7361are connected by the deposition treatment chamber 7370 at which thesubstrate is delivered by the transfer means 7366 and a transfer means7367.

Each treatment chamber connected to the transfer chambers 7360 and 7361is maintained in a reduced pressure state. Therefore, in the evaporationdevice, deposition treatment of an EL layer is continuously performedwithout exposing the substrate to the room air. A display panel in whichthe formation of the EL layer is completed might be deteriorated due tomoisture or the like; therefore, in the evaporation device, a sealingtreatment chamber 7365 for performing a sealing treatment beforeexposure to the room air in order to maintain quality is connected tothe transfer chamber 7361. Since the sealing treatment chamber 7365 isunder atmospheric pressure or reduced pressure similar thereto, anintermediate treatment chamber 7364 is also provided between thetransfer chamber 7361 and the sealing treatment chamber 7365. Theintermediate treatment chamber 7364 is provided for delivering thesubstrate and buffering the pressure between the chambers.

An exhaust means is provided in the loading chamber, the unloadingchamber, the transfer chamber, and the deposition treatment chamber inorder to maintain reduced pressure in the chamber. As the exhaust means,various vacuum pumps such as a dry pump, a turbo-molecular pump, and adiffusion pump can be used.

In the evaporation device of FIG. 73, the number of treatment chambersconnected to the transfer chambers 7360 and 7361 and a structure thereofcan be combined in accordance with a stacked-layer structure of the ELelement as appropriate. An example of the combination is describedbelow.

The heat treatment chamber 7368 performs a degasification treatment byheating a substrate over which a lower electrode, an insulatingpartition wall, and the like are formed first. In the plasma treatmentchamber 7372, a surface of the lower electrode is treated with a raregas or oxygen plasma. The plasma treatment is performed for cleaning thesurface, stabilizing a surface state, and stabilizing a physical orchemical state (e.g., a work function) of the surface.

The deposition treatment chamber 7369 is for forming an electrode bufferlayer which is in contact with one electrode of the EL element. Theelectrode buffer layer has a carrier injection property (hole injectionor electron injection) and suppresses generation of a short-circuit anda black spot defect of the EL element. Typically, the electrode bufferlayer is formed of an organic-inorganic hybrid material, has aresistivity of 5×10⁴ to 1×10⁶ Ωcm, and is formed having a thickness of30 to 300 nm. The deposition treatment chamber 7371 is for forming ahole transporting layer.

A light-emitting layer in an EL element has a different structurebetween the case of emitting single color light and the case of emittingwhite light. A deposition treatment chamber in the evaporation device ispreferably provided in accordance with the structure. For example, whenthree kinds of EL elements each having a different light emission colorare formed in a display panel, it is necessary to form a light-emittinglayer corresponding to each light emission color. In this case, thedeposition treatment chamber 7370 can be used for forming a firstlight-emitting layer, a deposition treatment chamber 7373 can be usedfor forming a second light-emitting layer, and a deposition treatmentchamber 7374 can be used for forming a third light-emitting layer. Byusing a different deposition treatment chamber for each light-emittinglayer, cross contamination due to different light-emitting materials canbe prevented, and throughput of the deposition treatment can beimproved.

Alternatively, three kinds of EL elements each having a different lightemission color may be sequentially deposited in each of the depositiontreatment chambers 7370, 7373 and 7374. In this case, evaporation isperformed by moving a shadow mask in accordance with a region to bedeposited.

When an EL element which emits white light is formed, the EL element isformed by vertically stacking light-emitting layers of different lightemission colors. Also in this case, the element substrate can betransferred through the deposition treatment chambers sequentially toform each light-emitting layer. Alternatively, different light-emittinglayers can be formed continuously in the same deposition treatmentchamber.

In the deposition treatment chamber 7376, an electrode is formed overthe EL layer. The electrode can be formed by an electron beamevaporation method or a sputtering method, and preferably by aresistance heating evaporation method.

The element substrate in which the formation of the electrode isfinished is transferred to the sealing treatment chamber 7365 throughthe intermediate treatment chamber 7364. The sealing treatment chamber7365 is filled with an inert gas such as helium, argon, neon, ornitrogen, and a sealing substrate is attached and sealed to a side ofthe element substrate where the EL layer is formed under the atmosphere.In a sealed state, a space between the element substrate and the sealingsubstrate may be filled with the inert gas or a resin material. Thesealing treatment chamber 7365 is provided with a dispenser whichprovides a sealing material, a mechanical element such as an arm and afixing stage which fixes the sealing substrate to face the elementsubstrate, a dispenser or a spin coater which fills the chamber with aresin material, and the like.

FIG. 74 shows an internal structure of a deposition treatment chamber.The deposition treatment chamber is maintained in a reduced pressurestate. In FIG. 74, a space interposed between a top plate 7491 and abottom plate 7492 is an inner chamber, which is maintained in a reducedpressure state.

One or a plurality of evaporation sources are provided in the treatmentchamber. This is because a plurality of evaporation sources arepreferably provided when a plurality of layers having differentcompositions are formed or when different materials are co-evaporated.In FIG. 74, evaporation sources 7481 a, 7481 b, and 7481 c are attachedto an evaporation source holder 7480. The evaporation source holder 7480is held by a multi-joint arm 7483. The multi-joint arm 7483 allows theevaporation source holder 7480 to move within its movable range bystretching the joint. In addition, the evaporation source holder 7480may be provided with a distance sensor 7482 to monitor a distancebetween the evaporation sources 7481 a to 7481 c and a substrate 7489,so that an optimum distance for evaporation may be controlled. In thiscase, the multi-joint arm may be capable of moving toward upper andlower directions (Z direction) as well.

The substrate 7489 is fixed by using a substrate stage 7486 and asubstrate chuck 7487 together. The substrate stage 7486 may have astructure where a heater is incorporated so that the substrate 7489 canbe heated. The substrate 7489 is fixed to the substrate stage 7486 andtransferred by the substrate chuck 7487. At the time of evaporation, ashadow mask 7490 provided with an opening corresponding to a depositionpattern can be used if needed. In this case, the shadow mask 7490 isprovided between the substrate 7489 and the evaporation sources 7481 ato 7481 c. The shadow mask 7490 is fixed to the substrate 7489 in closecontact with each other or with a certain interval therebetween by amask chuck 7488. When an alignment of the shadow mask 7490 is needed,the alignment is performed by arranging a camera in the treatmentchamber and providing the mask chuck 7488 with a positioning means whichslightly moves in X-Y-θ directions.

The evaporation sources 7481 a to 7481 c include an evaporation materialsupply means which continuously supplies an evaporation material to theevaporation source. The evaporation material supply means includesmaterial supply sources 7485 a, 7485 b, and 7485 c, which are providedapart from the evaporation sources 7481 a to 7481 c, and a materialsupply pipe 7484 which connects therebetween. Typically, the materialsupply sources 7485 a to 7485 c are provided corresponding to theevaporation sources 7481 a to 7481 c. In FIG. 74, the material supplysource 7485 a corresponds to the evaporation source 7481 a; the materialsupply source 7485 b corresponds to the evaporation source 7481 b; andthe material supply source 7485 c corresponds to the evaporation source7481 c.

As a method for supplying an evaporation material, an airflow transfermethod, an aerosol method, or the like can be used. In an airflowtransfer method, impalpable powder of an evaporation material istransferred in airflow to the evaporation sources 7481 a to 7481 c, byusing an inert gas or the like. In an aerosol method, evaporation isperformed while material liquid in which an evaporation material isdissolved or dispersed in a solvent is transferred and aerosolized by anatomizer, and the solvent in the aerosol is vaporized. In each case, theevaporation sources 7481 a to 7481 c are provided with a heating means,and a film is formed over the substrate 7489 by vaporizing theevaporation material transferred thereto. In FIG. 74, the materialsupply pipe 7484 can be bent flexibly and is formed of a thin pipe whichhas enough rigidity not to be transformed even under reduced pressure.

When an airflow transfer method or an aerosol method is used, depositionmay be performed under atmospheric pressure or lower pressure in thedeposition treatment chamber, and preferably performed under a reducedpressure of 133 to 13300 Pa. An inert gas such as helium, argon, neon,krypton, xenon, or nitrogen fills the deposition treatment chamber or issupplied (and exhausted at the same time) to the deposition treatmentchamber, so that the pressure can be adjusted. In addition, an oxidizingatmosphere may be employed by introducing a gas such as oxygen ornitrous oxide in the deposition treatment chamber where an oxide film isformed. Further, a reducing atmosphere may be employed by introducing agas such as hydrogen in the deposition treatment chamber where anorganic material is deposited.

As another method for supplying an evaporation material, a screw may beprovided in the material supply pipe 7484 to continuously push theevaporation material toward the evaporation source.

With this evaporation device, a film can be formed continuously withhigh uniformity even in the case of a large display panel. Further,since it is not necessary to supply an evaporation material to theevaporation source every time the evaporation material is run out in theevaporation source, throughput can be improved.

When the structure of each display device shown in the aforementionedembodiment modes is used for driving a pixel, deterioration incharacteristics of a transistor can be suppressed. Thus, malfunction ofa shift register due to deterioration in characteristics of thetransistor can be prevented. Further, a display defect of the pixel dueto malfunction of the shift register can be suppressed.

Note that each pixel structure shown in this embodiment mode can beimplemented in free combination with the structure of each displaydevice shown in other embodiment modes in this specification. Further,the pixel structures shown in this embodiment mode can be implemented infree combination with each other.

Embodiment Mode 11

In this embodiment mode, a signal line driver circuit included in eachdisplay device shown in Embodiment Modes 1 to 8 is described.

A signal line driver circuit in FIG. 56 is described. The signal linedriver circuit in FIG. 56 includes a driver IC 5601, switch groups5602_1 to 5602_M, a first wiring 5611, a second wiring 5612, a thirdwiring 5613, and wirings 5621_1 to 5621_M. Each of the switch groups5602_1 to 5602_M includes a first switch 5603 a, a second switch 5603 b,and a third switch 5603 c.

The driver IC 5601 is connected to the first wiring 5611, the secondwiring 5612, the third wiring 5613, and the wirings 5621_1 to 5621_M.Each of the switch groups 5602_1 to 5602_M is connected to the firstwiring 5611, the second wiring 5612, the third wiring 5613, and each oneof the wirings 5621_1 to 5621_M corresponding to each of the switchgroups 5602_1 to 5602_M. Each of the wirings 5621_1 to 5621_M isconnected to three signal lines through the first switch 5603 a, thesecond switch 5603 b, and the third switch 5603 c. For example, thewiring 5621_J in the J-th column (one of the wirings 5621_1 to 5621_M)is connected to a signal line Sj−1, a signal line Sj, and a signal lineSj+1 through the first switch 5603 a, the second switch 5603 b, and thethird switch 5603 c included in the switch group 5602_J.

Note that the driver IC 5601 is preferably formed using a singlecrystalline substrate or a glass substrate using a polycrystallinesemiconductor. The switch groups 5602_1 to 5602_M are preferably formedover the same substrate as each pixel portion shown in Embodiment Modes1 to 8. Therefore, the driver IC 5601 and the switch groups 5602_1 to5602_M are preferably connected through an FPC or the like.

Next, operation of the signal line driver circuit in FIG. 56 isdescribed with reference to a timing chart of FIG. 57. The timing chartof FIG. 57 shows the case where a scan line Gi in the i-th row isselected. A selection period of the scan line Gi in the i-th row isdivided into a first sub-selection period T1, a second sub-selectionperiod T2, and a third sub-selection period T3. Note that the signalline driver circuit in FIG. 56 operates similarly to FIG. 57 even when ascan line in another row is selected.

Signals are input to the first wiring 5611, the second wiring 5612, andthe third wiring 5613. On/off of the first switch 5603 a is controlledby the signal input to the first wiring 5611. On/off of the secondswitch 5603 b is controlled by the signal input to the second wiring5612. On/off of the third switch 5603 c is controlled by the signalinput to the third wiring 5613.

Note that the timing chart of FIG. 57 shows the case where the wiring5621_J in the J-th column is connected to the signal line Sj−1, thesignal line Sj, and the signal line Sj+1 through the first switch 5603a, the second switch 5603 b, and the third switch 5603 c.

The timing chart of FIG. 57 shows timing when the scan line Gi in thei-th row is selected, timing 5703 a of on/off of the first switch 5603a, timing 5703 b of on/off of the second switch 5603 b, timing 5703 c ofon/off of the third switch 5603 c, and a signal 5721_J input to thewiring 5621_J in the J-th column.

In the first sub-selection period T1, the second sub-selection periodT2, and the third sub-selection period T3, different video signals areinput to the wirings 5621_1 to 5621_M. For example, a video signal inputto the wiring 5621_J in the first sub-selection period T1 is input tothe signal line Sj−1, a video signal input to the wiring 5621_J in thesecond sub-selection period T2 is input to the signal line Sj, and avideo signal input to the wiring 5621_J in the third sub-selectionperiod T3 is input to the signal line Sj+1. In the first sub-selectionperiod T1, the second sub-selection period T2, and the thirdsub-selection period T3, the video signals input to the wiring 5621_Jare denoted by Dataj−1, Dataj, and Dataj+1.

As shown in FIG. 57, in the first sub-selection period T1, the firstswitch 5603 a is turned on, and the second switch 5603 b and the thirdswitch 5603 c are turned off. At this time, Dataj−1 input to the wiring5621_J is input to the signal line Sj−1 through the first switch 5603 a.In the second sub-selection period T2, the second switch 5603 b isturned on, and the first switch 5603 a and the third switch 5603 c areturned off. At this time, Dataj input to the wiring 5621_J is input tothe signal line Sj through the second switch 5603 b. In the thirdsub-selection period T3, the third switch 5603 c is turned on, and thefirst switch 5603 a and the second switch 5603 b are turned off. At thistime, Dataj+1 input to the wiring 5621_J is input to the signal lineSj+1 through the third switch 5603 c.

As described above, in the signal line driver circuit of FIG. 56, onegate selection period is divided into three; thus, video signals can beinput to three signal lines from one wiring 5621 in one gate selectionperiod. Therefore, in the signal line driver circuit in FIG. 56, thenumber of connections in which the substrate provided with the driver IC5601 and the substrate provided with the pixel portion are connected canbe approximately one third of the number of signal lines. The number ofconnections is reduced to approximately one third of the number ofsignal lines; therefore, reliability, yield, and the like of the signalline driver circuit in FIG. 56 can be improved.

By applying the signal line driver circuit in this embodiment mode toeach display device shown in Embodiment Modes 1 to 8, the number ofconnections in which the substrate provided with the pixel portion andan external substrate are connected can be further reduced. Therefore,reliability and yield of the display device in the invention can beimproved.

Next, the case where N-channel transistors are used for the first switch5603 a, the second switch 5603 b, and the third switch 5603 c isdescribed with reference to FIG. 59. Note that portions similar to FIG.56 are denoted by the same reference numerals, and detailed descriptionof the same portions and portions having similar functions is omitted.

A first transistor 5903 a corresponds to the first switch 5603 a. Asecond transistor 5903 b corresponds to the second switch 5603 b. Athird transistor 5903 c corresponds to the third switch 5603 c.

For example, in the case of the switch group 5602_J, a first terminal ofthe first transistor 5903 a is connected to the wiring 5621_J, a secondterminal of the first transistor 5903 a is connected to the signal lineSj−1, and a gate electrode of the first transistor 5903 a is connectedto the first wiring 5611. A first terminal of the second transistor 5903b is connected to the wiring 5621_J, a second terminal of the secondtransistor 59036 is connected to the signal line Sj, and a gateelectrode of the second transistor 5903 b is connected to the secondwiring 5612. A first terminal of the third transistor 5903 c isconnected to the wiring 5621_J, a second terminal of the thirdtransistor 5903 c is connected to the signal line Sj+1, and a gateelectrode of the third transistor 5903 c is connected to the thirdwiring 5613.

Note that the first transistor 5903 a, the second transistor 5903 b, andthe third transistor 5903 c each function as a switching transistor.Further, each of the first transistor 5903 a, the second transistor 5903b, and the third transistor 5903 c is turned on when a signal input toeach gate electrode is at an H level, and is turned off when a signalinput to each gate electrode is at an L level.

When N-channel transistors are used for the first switch 5603 a, thesecond switch 5603 b, and the third switch 5603 c, amorphous silicon canbe used for a semiconductor layer of a transistor; thus, simplificationof a manufacturing process, reduction in manufacturing cost, andimprovement in yield can be realized. Further, a semiconductor devicesuch as a large display panel can be formed. Even when polysilicon orsingle crystalline silicon is used for the semiconductor layer of thetransistor, simplification of a manufacturing process can also berealized. Therefore, the signal line driver circuit in FIG. 59 ispreferably applied to each display device shown in Embodiment Modes 1 to4.

In the signal line driver circuit in FIG. 59, N-channel transistors areused for the first transistor 5903 a, the second transistor 5903 b, andthe third transistor 5903 c; however, P-channel transistors may be usedfor the first transistor 5903 a, the second transistor 5903 b, and thethird transistor 5903 c. In the latter case, each transistor is turnedon when a signal input to the gate electrode is at an L level, and isturned off when a signal input to the gate electrode is at an H level.When P-channel transistors are used for the first transistor 5903 a, thesecond transistor 5903 b, and the third transistor 5903 c, the signalline driver circuit is preferably applied to each display device shownin Embodiment Modes 5 to 8.

Note that arrangement, the number, a driving method, and the like of aswitch are not limited as long as one gate selection period is dividedinto a plurality of sub-selection periods and video signals are input toa plurality of signal lines from one wiring in each of the plurality ofsub-selection periods as shown in FIG. 56. For example, when videosignals are input to three or more signal lines from one wiring in eachof three or more sub-selection periods, a switch and a wiring forcontrolling the switch may be added. Note that when one selection periodis divided into four or more sub-selection periods, one sub-selectionperiod becomes short. Therefore, one selection period is preferablydivided into two or three sub-selection periods.

For example, as shown in a timing chart of FIG. 58, one selection periodmay be divided into a precharge period Tp, the first sub-selectionperiod T1, the second sub-selection period T2, and the thirdsub-selection period T3. The timing chart of FIG. 58 shows timing whenthe scan line Gi in the i-th row is selected, timing 5803 a of on/off ofthe first switch 5603 a, timing 5803 b of on/off of the second switch5603 b, timing 5803 c of on/off of the third switch 5603 c, and a signal5821_J input to the wiring 5621_J in the J-th column. As shown in FIG.58, the first switch 5603 a, the second switch 5603 b, and the thirdswitch 5603 c are tuned on in the precharge period Tp. At this time, aprecharge voltage Vp input to the wiring 5621_J is input to each of thesignal line Sj−1, the signal line Sj, and the signal line Sj+1 throughthe first switch 5603 a, the second switch 5603 b, and the third switch5603 c. In the first sub-selection period T1, the first switch 5603 a isturned on, and the second switch 5603 b and the third switch 5603 c areturned off. At this time, Dataj−1 input to the wiring 5621_J is input tothe signal line Sj−1 through the first switch 5603 a. In the secondsub-selection period T2, the second switch 5603 b is turned on, and thefirst switch 5603 a and the third switch 5603 c are turned off. At thistime, Dataj input to the wiring 5621_J is input to the signal line Sjthrough the second switch 5603 b. In the third sub-selection period T3,the third switch 5603 c is turned on, and the first switch 5603 a andthe second switch 5603 b are turned off. At this time, Dataj+1 input tothe wiring 5621_J is input to the signal line Sj+1 through the thirdswitch 5603 c.

As described above, in the signal line driver circuit of FIG. 56, whichoperates in accordance with the timing chart of FIG. 58, since aprecharge selection period is provided before a sub-selection period, asignal line can be precharged; thus, a video signal can be written to apixel with high speed. Further, since the signal line is precharged, thepixel can held a correct video signal. It is needless to say that in thesignal line driver circuit of FIG. 56, which operates in accordance withthe timing chart of FIG. 58, the number of connections in which thesubstrate provided with the driver IC 5601 and the substrate providedwith the pixel portion are connected can be approximately one third ofthe number of signal lines, similarly to the signal line driver circuitin FIG. 56, which operates in accordance with the timing chart of FIG.57. Accordingly, reliability, yield, and the like can be improved. Notethat portions similar to FIG. 57 are denoted by the same referencenumerals, and detailed description of the same portions and portionshaving similar functions is omitted.

Also in FIG. 60, one gate selection period can be divided into aplurality of sub-selection periods and video signals can be input to aplurality of signal lines from one wiring in each of the plurality ofsub-selection periods as shown in FIG. 56. Note that FIG. 60 shows onlya switch group 6022_J in the J-th column in a signal line drivercircuit. The switch group 6022_J includes a first transistor 6001, asecond transistor 6002, a third transistor 6003, a fourth transistor6004, a fifth transistor 6005, and a sixth transistor 6006. The firsttransistor 6001, the second transistor 6002, the third transistor 6003,the fourth transistor 6004, the fifth transistor 6005, and the sixthtransistor 6006 are N-channel transistors. The switch group 6022_J isconnected to a first wiring 6011, a second wiring 6012, a third wiring6013, a fourth wiring 6014, a fifth wiring 6015, a sixth wiring 6016,the wiring 5621_J, the signal line Sj−1, the signal line Sj, and thesignal line Sj+1.

A first terminal of the first transistor 6001 is connected to the wiring5621_J, a second terminal of the first transistor 6001 is connected tothe signal line Sj−1, and a gate terminal of the first transistor 6001is connected to the first wiring 6011. A first terminal of the secondtransistor 6002 is connected to the wiring 5621_J, a second terminal ofthe second transistor 6002 is connected to the signal line Sj−1, and agate terminal of the second transistor 6002 is connected to the secondwiring 6012. A first terminal of the third transistor 6003 is connectedto the wiring 5621_J, a second terminal of the third transistor 6003 isconnected to the signal line Sj, and a gate terminal of the thirdtransistor 6003 is connected to the third wiring 6013. A first terminalof the fourth transistor 6004 is connected to the wiring 5621_J, asecond terminal of the fourth transistor 6004 is connected to the signalline Sj, and a gate terminal of the fourth transistor 6004 is connectedto the fourth wiring 6014. A first terminal of the fifth transistor 6005is connected to the wiring 5621_J, a second terminal of the fifthtransistor 6005 is connected to the signal line Sj+1, and a gateterminal of the fifth transistor 6005 is connected to the fifth wiring6015. A first terminal of the sixth transistor 6006 is connected to thewiring 5621_J, a second terminal of the sixth transistor 6006 isconnected to the signal line Sj+1, and a gate terminal of the sixthtransistor 6006 is connected to the sixth wiring 6016.

Note that the first transistor 6001, the second transistor 6002, thethird transistor 6003, the fourth transistor 6004, the fifth transistor6005, and the sixth transistor 6006 each function as a switchingtransistor. Further, each of first transistor 6001, the secondtransistor 6002, the third transistor 6003, the fourth transistor 6004,the fifth transistor 6005, and the sixth transistor 6006 is turned onwhen a signal input to each gate electrode is at an H level, and isturned off when a signal input to each gate electrode is at an L level.

Note that the first wiring 6011 and the second wiring 6012 correspond toa first wiring 5911 in FIG. 59. The third wiring 6013 and the fourthwiring 6014 correspond to a second wiring 5912 in FIG. 59. The fifthwiring 6015 and the sixth wiring 6016 correspond to a third wiring 5913in FIG. 59. The first transistor 6001 and the second transistor 6002correspond to the first transistor 5903 a in FIG. 59. The thirdtransistor 6003 and the fourth transistor 6004 correspond to the secondtransistor 5903 b in FIG. 59. The fifth transistor 6005 and the sixthtransistor 6006 correspond to the third transistor 5903 c in FIG. 59.

In FIG. 60, in the first sub-selection period T1 shown in FIG. 57, oneof the first transistor 6001 or the second transistor 6002 is turned on.In the second sub-selection period T2, one of the third transistor 6003or the fourth transistor 6004 is turned on. In the third sub-selectionperiod T3, one of the fifth transistor 6005 or the sixth transistor 6006is turned on. Further, in the precharge period Tp shown in FIG. 58,either the first transistor 6001, the third transistor 6003, and thefifth transistor 6005; or the second transistor 6002, the fourthtransistor 6004, and the sixth transistor 6006 are turned on.

Thus, in FIG. 60, since the on time of each transistor can be reduced,deterioration in characteristics of the transistor can be suppressed. Itis because in the first sub-selection period T1 shown in FIG. 57, forexample, the video signal can be input to the signal line Sj−1 when oneof the first transistor 6001 or the second transistor 6002 is turned on.Note that in the first sub-selection period T1 shown in FIG. 57, forexample, when both the first transistor 6001 and the second transistor6002 are turned on at the same time, the video signal can be input tothe signal line Sj−1 with high speed.

Note that when N-channel transistors are used for the first transistor6001, the third transistor 6003, the fifth transistor 6005, the secondtransistor 6002, the fourth transistor 6004, and the sixth transistor6006, amorphous silicon can be used for semiconductor layers of thetransistors. Therefore, simplification of a manufacturing process,reduction in manufacturing cost, and improvement in yield can berealized. Further, a semiconductor device such as a large display panelcan be formed. Even when polysilicon or single crystalline silicon isused for the semiconductor layer of the transistor, simplification of amanufacturing process can also be realized. Therefore, the signal linedriver circuit in FIG. 60 is preferably applied to each display deviceshown in Embodiment Modes 1 to 4.

Note that two transistors are connected in parallel between the wiring5621 and the signal line in FIG. 60; however, the invention is notlimited thereto, and three or more transistors may be connected inparallel between the wiring 5621 and the signal line. Thus,deterioration in characteristics of each transistor can be furthersuppressed.

Note that each signal line driver circuit shown in this embodiment modecan be implemented in free combination with the structure of eachdisplay device shown in other embodiment modes in this specification.Further, the structures of the signal line driver circuit shown in thisembodiment mode can be implemented in free combination with each other.

Embodiment Mode 12

In this embodiment mode, a structure for preventing a defect due toelectrostatic discharge damage in the display device shown in EmbodimentModes 1 to 8 is described.

Note that electrostatic discharge damage means instant discharge throughan input/output terminal of a semiconductor device when positive ornegative charges stored in the human body or the object touch thesemiconductor device, and damage caused by supplying a large currentflowing within the semiconductor device.

FIG. 61A shows a structure for preventing electrostatic discharge damagecaused in a scan line by a protective diode. FIG. 61A shows a structurewhere the protective diode is provided between a wiring 6111 and thescan line. Although not shown, a plurality of pixels are connected tothe scan line Gi in the i-th row. Note that a transistor 6101 is used asthe protective diode. The transistor 6101 is an N-channel transistor;however, a P-channel transistor may be used, and polarity of thetransistor 6101 may be the same as that of a transistor included in ascan line driver circuit or a pixel.

Note that one protective diode is arranged here; however, a plurality ofprotective diodes may be arranged in series, in parallel, or inseries-parallel.

A first terminal of the transistor 6101 is connected to the scan line Giin the i-th row, a second terminal of the transistor 6101 is connectedto the wiring 6111, and a gate terminal of the transistor 6101 isconnected to the scan line Gi in the i-th row.

Operation of FIG. 61A is described. A certain potential is input to thewiring 6111, which is lower than an L level of a signal input to thescan line Gi in the i-th row. When positive or negative charges are notdischarged to the scan line Gi in the i-th row, a potential of the scanline Gi in the i-th row is at an H level or an L level, so that thetransistor 6101 is turned off. On the other hand, when negative chargesare discharged to the scan line Gi in the i-th row, the potential of thescan line Gi in the i-th row decreases instantaneously. At this time,the potential of the scan line Gi in the i-th row is lower than a valueobtained by subtracting a threshold voltage of the transistor 6101 froma potential of the wiring 6111, so that the transistor 6101 is turnedon, and a current flows to the wiring 6111 through the transistor 6101.Therefore, the structure shown in FIG. 61A can prevent a large currentfrom flowing to the pixel, so that electrostatic discharge damage of thepixel can be prevented.

FIG. 61B shows a structure for preventing electrostatic discharge damagewhen positive charges are discharged to the scan line Gi in the i-throw. A transistor 6102 functioning as a protective diode is providedbetween a scan line and a wiring 6112. Note that one protective diode isarranged here; however, a plurality of protective diodes may be arrangedin series, in parallel, or in series-parallel. The transistor 6102 is anN-channel transistor; however, a P-channel transistor may be used, andpolarity of the transistor 6102 may be the same as that of thetransistor included in the scan line driver circuit or the pixel. Afirst terminal of the transistor 6102 is connected to the scan line Giin the i-th row, a second terminal of the transistor 6102 is connectedto the wiring 6112, and a gate terminal of the transistor 6102 isconnected to the wiring 6112. Note that a potential higher than an Hlevel of the signal input to the scan line Gi in the i-th row is inputto the wiring 6112. Therefore, when charges are not discharged to thescan line Gi in the i-th row, the transistor 6102 is turned off. On theother hand, when positive charges are discharged to the scan line Gi inthe i-th row, the potential of the scan line Gi in the i-th rowincreases instantaneously. At this time, the potential of the scan lineGi in the i-th row is higher than the sum of a potential of the wiring6112 and a threshold voltage of the transistor 6102, so that thetransistor 6102 is turned on, and a current flows to the wiring 6112through the transistor 6102. Therefore, the structure shown in FIG. 61Bcan prevent a large current from flowing to the pixel, so thatelectrostatic discharge damage of the pixel can be prevented.

As shown in FIG. 61C, with a structure which combines FIGS. 61A and 61B,electrostatic discharge damage of the pixel can be prevented whenpositive or negative charges are discharged to the scan line Gi in thei-th row. Note that portions similar to FIGS. 61A and 61B are denoted bythe same reference numerals, and detailed description of the sameportions and portions having similar functions is omitted.

FIG. 62A shows a structure where a transistor 6201 functioning as aprotective diode is connected between a scan line and a storagecapacitor line. Note that one protective diode is arranged here;however, a plurality of protective diodes may be arranged in series, inparallel, or in series-parallel. The transistor 6201 is an N-channeltransistor; however, a P-channel transistor may be used, and polarity ofthe transistor 6201 may be the same as that of the transistor includedin the scan line driver circuit or the pixel. A wiring 6211 functions asa storage capacitor line. A first terminal of the transistor 6201 isconnected to the scan line Gi in the i-th row, a second terminal of thetransistor 6201 is connected to the wiring 6211, and a gate terminal ofthe transistor 6201 is connected to the scan line Gi in the i-th row.Note that a potential lower than an L level of the signal input to thescan line Gi in the i-th row is input to the wiring 6211. Therefore,when charges are not discharged to the scan line Gi in the i-th row, thetransistor 6210 is turned off. On the other hand, when negative chargesare discharged to the scan line Gi in the i-th row, the potential of thescan line Gi in the i-th row decreases instantaneously. At this time,the potential of the scan line Gi in the i-th row is lower than a valueobtained by subtracting a threshold voltage of the transistor 6201 froma potential of the wiring 6211, so that the transistor 6201 is turnedon, and a current flows to the wiring 6211 through the transistor 6201.Therefore, the structure shown in FIG. 62A can prevent a large currentfrom flowing to the pixel, so that electrostatic discharge damage of thepixel can be prevented. Further, since the storage capacitor line isutilized for discharging charges in the structure shown in FIG. 62A, awiring is not required to be added.

FIG. 62B shows a structure for preventing electrostatic discharge damagewhen positive charges are discharged to the scan line Gi in the i-throw. Here, a potential higher than an H level of the signal input to thescan line Gi in the i-th row is input to the wiring 6211. Therefore,when charges are not discharged to the scan line Gi in the i-th row, thetransistor 6202 is turned off. On the other hand, when positive chargesare discharged to the scan line Gi in the i-th row, the potential of thescan line Gi in the i-th row increases instantaneously. At this time,the potential of the scan line Gi in the i-th row is higher than the sumof a potential of the wiring 6211 and a threshold voltage of thetransistor 6202, so that the transistor 6202 is turned on, and a currentflows to the wiring 6211 through the transistor 6202. Therefore, thestructure shown in FIG. 62B can prevent a large current from flowing tothe pixel, so that electrostatic discharge damage of the pixel can beprevented. Further, since the storage capacitor line is utilized fordischarging charges in the structure shown in FIG. 62B, a wiring is notneeded to be added. Note that portions similar to FIG. 62A are denotedby the same reference numerals, and detailed description of the sameportions and portions having similar functions is omitted.

Next, FIG. 64A shows a structure for preventing electrostatic dischargedamage caused in a signal line by a protective diode. FIG. 64A shows astructure where the protective diode is provided between a wiring 6411and the signal line. Although not shown, a plurality of pixels areconnected to the signal line Sj in the j-th column. A transistor 6401 isused as the protective diode. Note that the transistor 6401 is anN-channel transistor; however, a P-channel transistor may be used, andpolarity of the transistor 6401 may be the same as that of a transistorincluded in a signal line driver circuit or the pixel.

Note that one protective diode is arranged here; however, a plurality ofprotective diodes may be arranged in series, in parallel, or inseries-parallel.

A first terminal of the transistor 6401 is connected to the signal lineSj in the j-th column, a second terminal of the transistor 6401 isconnected to the wiring 6411, and a gate terminal of the transistor 6401is connected to the signal line Sj in the j-th column.

Operation of FIG. 64A is described. A certain potential is input to thewiring 6411, which is lower than the smallest value of a video signalinput to the signal line Sj in the j-th column. When positive ornegative charges are not discharged to the signal line Sj in the j-thcolumn, a potential of the signal line Sj in the j-th column is the sameas the video signal, so that the transistor 6401 is turned off. On theother hand, when negative charges are discharged to the signal line Sjin the j-th column, the potential of the signal line Sj in the j-thcolumn decreases instantaneously. At this time, the potential of thesignal line Sj in the j-th column is lower than a value obtained bysubtracting a threshold voltage of the transistor 6401 from a potentialof the wiring 6411, so that the transistor 6401 is turned on, and acurrent flows to the wiring 6411 through the transistor 6401. Therefore,the structure shown in FIG. 64A can prevent a large current from flowingto the pixel, so that electrostatic discharge damage of the pixel can beprevented.

FIG. 64B shows a structure for preventing electrostatic discharge damagewhen positive charges are discharged to the signal line Sj in the j-thcolumn. A transistor 6402 functioning as a protective diode is providedbetween the signal line and a wiring 6412. Note that one protectivediode is arranged here; however, a plurality of protective diodes may bearranged in series, in parallel, or in series-parallel. The transistor6402 is an N-channel transistor; however, a P-channel transistor may beused, and polarity of the transistor 6402 may be the same as that of thetransistor included in the signal line driver circuit or the pixel. Afirst terminal of the transistor 6402 is connected to the signal line Sjin the j-th column, a second terminal of the transistor 6402 isconnected to the wiring 6412, and a gate terminal of the transistor 6402is connected to the wiring 6412. Note that a potential higher than thelargest value of a video signal input to the signal line Sj in the j-thcolumn is input to the wiring 6412. Therefore, when charges are notdischarged to the signal line Sj in the j-th column, the transistor 6402is turned off. On the other hand, when positive charges are dischargedto the signal line Sj in the j-th column, the potential of the signalline Sj in the j-th column increases instantaneously. At this time, thepotential of the signal line Sj in the j-th column is higher than thesum of a potential of the wiring 6412 and a threshold voltage of thetransistor 6402, so that the transistor 6402 is turned on, and a currentflows to the wiring 6412 through the transistor 6402. Therefore, thestructure shown in FIG. 64B can prevent a large current from flowing tothe pixel, so that electrostatic discharge damage of the pixel can beprevented.

As shown in FIG. 64C, with a structure which combines FIGS. 64A and 64B,electrostatic discharge damage of the pixel can be prevented whenpositive or negative charges are discharged to the signal line Sj in thej-th column. Note that portions similar to FIGS. 64A and 64B are denotedby the same reference numerals, and detailed description of the sameportions and portions having similar functions is omitted.

In this embodiment mode, the structures for preventing electrostaticdischarge damage of the pixel connected to the scan line and the signalline are described. However, the structure in this embodiment mode isnot only used for preventing electrostatic discharge damage of the pixelconnected to the scan line and the signal line. For example, when thisembodiment mode is used for the wiring to which a signal or a potentialis input, connected to the scan line driver circuit and the signal linedriver circuit shown in Embodiment Modes 1 to 8, electrostatic dischargedamage of the scan line driver circuit and the signal line drivercircuit can be prevented.

Note that each display device shown in this embodiment mode can beimplemented in free combination with the structure of each displaydevice shown in other embodiment modes in this specification. Further,the structures of the display device shown in this embodiment mode canbe implemented in free combination with each other.

Embodiment Mode 13

In this embodiment mode, another structure of a display device which canbe applied to each display device shown in Embodiment Modes 1 to 8 isdescribed.

FIG. 63A shows a structure where a diode-connected transistor isprovided between a scan line and another scan line. FIG. 63A shows astructure where a diode-connected transistor 6301 a is provided betweenthe scan line Gi−1 in the (i−1)th row and the scan line Gi in i-th row,and a diode-connected transistor 6301 b is provided between the scanline Gi in i-th row and the scan line Gi+1 in the (i+1)th row. Note thatthe transistors 6301 a and 6301 b are N-channel transistors; however,P-channel transistors may be used, and polarity of the transistors 6301a and 6301 b may be the same as that of a transistor included in a scanline driver circuit or a pixel.

Note that in FIG. 63A, the scan line Gi−1 in the (i−1)th row, the scanline Gi in i-th row, and the scan line Gi+1 in the (i+1)th row aretypically shown, and a diode-connected transistor is similarly providedbetween other scan lines.

A first terminal of the transistor 6301 a is connected to the scan lineGi in i-th row, a second terminal of the transistor 6301 a is connectedto the scan line Gi−1 in the (i−1)th row, and a gate terminal of thetransistor 6301 a is connected to the scan line Gi−1 in the (i−1)th row.A first terminal of the transistor 6301 b is connected to the scan lineGi+1 in (i+1)th row, a second terminal of the transistor 6301 b isconnected to the scan line Gi in the i-th row, and a gate terminal ofthe transistor 6301 b is connected to the scan line Gi in the i-th row.

Operation of FIG. 63A is described. In each scan line driver circuitshown in Embodiment Modes 1 to 4, the scan line Gi−1 in the (i−1)th row,the scan line Gi in i-th row, and the scan line Gi+1 in the (i+1)th rowmaintain at an L level in the non-selection period. Therefore, thetransistors 6301 a and 6301 b are turned off. However, when thepotential of the scan line Gi in i-th row is increased due to noise orthe like, for example, a pixel is selected by the scan line Gi in i-throw and a wrong video signal is written to the pixel. Accordingly, byproviding the diode-connected transistor between the scan lines as shownin FIG. 63A, writing of a wrong video signal to the pixel can beprevented. It is because when the potential of the scan line Gi in i-throw is increased to more than the sum of a potential of the scan lineGi−1 in the (i−1)th row and a threshold voltage of the transistor 6301a, the transistor 6301 a is turned on and the potential of the scan lineGi in i-th row is decreased; thus, a pixel is not selected by the scanline Gi in i-th row.

The structure of FIG. 63A is particularly advantageous when a scan linedriver circuit and a pixel portion are formed over the same substrate,since in the scan line driver circuit including only N-channeltransistors or only P-channel transistors, a scan line is sometimes in afloating state and noise is easily caused in the scan line.

FIG. 63B shows a structure where a direction of a diode-connectedtransistor provided between the scan lines is reversed to that in FIG.63A. Note that transistors 6302 a and 6302 b are N-channel transistors;however, P-channel transistors may be used, and polarity of thetransistors 6302 a and 6302 b may be the same as that of the transistorincluded in the scan line driver circuit or the pixel. In FIG. 63B, afirst terminal of the transistor 6302 a is connected to the scan line Giin i-th row, a second terminal of the transistor 6302 a is connected tothe scan line Gi−1 in the (i−1)th row, and a gate terminal of thetransistor 6302 a is connected to the scan line Gi in i-th row. A firstterminal of the transistor 6302 b is connected to the scan line Gi+1 in(i+1)th row, a second terminal of the transistor 63026 is connected tothe scan line Gi in the i-th row, and a gate terminal of the transistor6302 b is connected to the scan line Gi+1 in (i+1)th row. In FIG. 63B,similarly to FIG. 64A, when the potential of the scan line Gi in thei-th row is increased to more than the sum of the potential of the scanline Gi+1 in (i+1)th row and a threshold voltage of the transistor 6302b, the transistor 6302 b is turned on and the potential of the scan lineGi in the i-th row is decreased. Thus, a pixel is not selected by thescan line Gi in the i-th row, and writing of a wrong video signal to thepixel can be prevented.

As shown in FIG. 63C, with a structure which combines FIGS. 63A and 63B,even when the potential of the scan line Gi in the i-th row isincreased, the transistors 6301 a and 6301 b are tuned on, so that thepotential of the scan line Gi in the i-th row is decreased. Note that inFIG. 63C, since a current flows through two transistors, larger noisecan be removed. Note that portions similar to FIGS. 63A and 63B aredenoted by the same reference numerals, and detailed description of thesame portions and portions having similar functions is omitted.

Note that as shown in FIGS. 62A and 62B, when a diode-connectedtransistor is provided between the scan line and the storage capacitorline, effects similar to FIGS. 63A, 63B, and 63C can be obtained.

Note that each display device shown in this embodiment mode can beimplemented in free combination with the structure of each displaydevice shown in other embodiment modes in this specification. Further,the structures of the display device shown in this embodiment mode canbe implemented in free combination with each other.

Embodiment Mode 14

In this embodiment mode, a structure of a display panel including thepixel structure shown in the aforementioned embodiment modes isdescribed with reference to FIGS. 100A and 100B.

FIG. 100A is a top plan view showing a display panel and FIG. 100B is across-sectional view along A-A′ of FIG. 100A. The display panel includesa signal control circuit 10001, a pixel portion 10002, a first gatedriver 10003, and a second gate driver 10006, which are shown by dottedlines. The display panel also includes a sealing substrate 10004 and asealing material 10005. A portion surrounded by the sealing material10005 is a space 10007.

Note that a wiring 10008 is for transmitting signals input to the firstgate driver 10003, the second gate driver 10006, and the signal controlcircuit 10001 and receives a video signal, a clock signal, a startsignal, and the like from an FPC (Flexible Printed Circuit) 10009 to bean external input terminal. An IC chip (a semiconductor chip including amemory circuit, a buffer circuit, and the like) 10019 is mounted on aconnection portion of the FPC 10009 and the display panel by COG (ChipOn Glass) or the like. Note that although only the FPC 10009 is shownhere, a printed wiring board (PWB) may be attached to the FPC. A displaydevice in this specification includes not only a main body of thedisplay panel but also a display panel with an FPC or a PWB attachedthereto and a display panel on which an IC chip or the like is mounted.

Next, a cross-sectional structure is described with reference with FIG.100B. The pixel portion 10002 and peripheral driver circuits (the firstgate driver 10003, the second gate driver 10006, and the signal controlcircuit 10001) are formed over a substrate 10010. Here, the signalcontrol circuit 10001 and the pixel portion 10002 are shown.

Note that the signal control circuit 10001 is formed using unipolartransistors such as a transistor 10020 and a transistor 10021 which areN-channel transistors. A pixel can be formed using a unipolar transistorby using the pixel structure of any of FIGS. 46A, 46B, 65A, 65B, 66, and67. Accordingly, when the peripheral driver circuits are formed usingN-channel transistors, a unipolar display panel can be formed. It isneedless to say that a CMOS circuit may be formed using a P-channeltransistor as well as the unipolar transistor.

Note that in the case where the transistors 10020 and 10021 areP-channel transistors, when the peripheral driver circuits are formedusing P-channel transistors, a unipolar display panel can be formed. Itis needless to say that a CMOS circuit may be formed using an N-channeltransistor as well as the unipolar transistor.

In this embodiment mode, a display panel in which the peripheral drivercircuits are formed over the same substrate is shown; however, it is notalways necessary, and all or part of the peripheral driver circuits maybe formed over an IC chip or the like and the IC chip may be mounted byCOG or the like. In this case, the driver circuit is not needed to beunipolar, and an N-channel transistor and a P-channel transistor can beused in combination.

The pixel portion 10002 includes a transistor 10011 and a transistor10012. Note that a source terminal of the transistor 10012 is connectedto a first electrode (pixel electrode) 10013. An insulator 10014 isformed to cover end portions of the first electrode 10013. Here, apositive photosensitive acrylic resin film is used for the insulator10014.

For good coverage, the insulator 10014 is formed to have a curvedsurface having a curvature at an upper end portion or a lower endportion of the insulator 10014. For example, when a positivephotosensitive acrylic is used as a material for the insulator 10014, itis preferable that only the upper end portion of the insulator 10014have a curved surface having a curvature radius (0.2 to 3 μm). Further,as the insulator 10014, either a negative photosensitive acrylic to beinsoluble in an etchant by light irradiation or a positivephotosensitive acrylic to be soluble in an etchant by light irradiationcan be used.

A layer 10016 containing an organic compound and a second electrode(opposite electrode) 10017 are formed over the first electrode 10013.Here, as a material for the first electrode 10013 functioning as ananode, a material having a high work function is preferably used. Forexample, a single-layer film of an ITO (Indium Tin Oxide) film, anindium zinc oxide (IZO) film, a titanium nitride film, a chromium film,a tungsten film, a Zn film, a Pt film, or the like, a stacked-layerstructure of a titanium nitride film and a film containing aluminum asits main component, a three-layer structure of a titanium nitride film,a film containing aluminum as its main component, and a titanium nitridefilm, or the like can be used. Note that in the case of a stacked-layerstructure, resistance as a wiring is low, good ohmic contact can beobtained, and a function as an anode can be obtained.

The layer 10016 containing the organic compound is formed by anevaporation method using an evaporation mask or by an ink-jet method. Ametal complex using a metal from group 4 of the periodic table is usedfor part of the layer 10016 containing the organic compound, and a lowmolecular material or a high molecular material can be used incombination. Further, for a material used for the layer containing theorganic compound, a single layer or a stacked layer of an organiccompound is often used; in this embodiment mode, an inorganic compoundmay be included in part of a film formed of an organic compound.Moreover, a known triplet material can also be used.

Further, as a material used for the second electrode 10017 formed overthe layer 10016 containing the organic compound, a material with a lowwork function (Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn,AlLi, CaF₂, or calcium nitride) may be used. Note that when lightgenerated in the layer 10016 containing the organic compound istransmitted through the second electrode 10017, a stacked-layerstructure of a metal thin film and a light-emitting conductive film (ITO(Indium Tin Oxide), an indium oxide-zinc oxide alloy (In₂O₃—ZnO), zincoxide (ZnO), or the like) is preferably used as the second electrode(cathode) 10017.

In addition, the sealing substrate 10004 is attached to the substrate10010 by the sealing material 10005 to have a structure where alight-emitting element 10018 is provided in the space 10007 surroundedby the substrate 10010, the sealing substrate 10004, and the sealingmaterial 10005. Note that the space 10007 may be filled with the sealingmaterial 10005 or with an inert gas (such as nitrogen or argon).

Note that an epoxy-based resin is preferably used for the sealingmaterial 10005. Further, it is preferable that these materials transmitas little moisture or oxygen as possible. In addition, as a materialused for the sealing substrate 10004, a plastic substrate formed usingFRP (Fiberglass-Reinforced Plastics), PVF (polyvinyl fluoride),polyester, acrylic, or the like can be used as well as a glass substrateor a quartz substrate.

As described above, a display panel including a pixel structure of thedisplay device in the invention can be obtained. Note that theaforementioned structure is an example, and a structure of a displaypanel of the display device in the invention is not limited thereto.

As shown in FIGS. 100A and 100B, the signal control circuit 10001, thepixel portion 10002, the first gate driver 10003, and the second gatedriver 10006 are formed over the same substrate; thus, cost reduction ofthe display device can be realized. Further, in this case, when unipolartransistors are used for the signal control circuit 10001, the pixelportion 10002, the first gate driver 10003, and the second gate driver10006, simplification of a manufacturing process can be realized, andthus, further cost reduction can be realized.

Note that the structure of the display panel is not limited to thestructure shown in FIG. 100A, in which the signal control circuit 10001,the pixel portion 10002, the first gate driver 10003, and the secondgate driver 10006 are formed over the same substrate, and a signalcontrol circuit 10101 in FIG. 101A, which corresponds to the signalcontrol circuit 10001, may be formed over an IC chip and mounted on thedisplay panel by COG or the like. Note also that a substrate 10100, apixel portion 10102, a first gate driver 10103, a second gate driver10104, an FPC 10105, an IC chip 10106, an IC chip 10107, a sealingsubstrate 10108, and a sealing material 10109 in FIG. 101A correspond tothe substrate 10010, the pixel portion 10002, the first gate driver10003, the second gate driver 10006, the FPC 10009, the IC chip 10019,the sealing substrate 10004, and the sealing material 10005 in FIG.100A.

That is, only the signal driver circuit of which high speed operation isrequired is formed into an IC chip using a CMOS or the like, and thus,lower power consumption is realized. Further, when a semiconductor chipformed using a silicon wafer or the like is used as the IC chip, higherspeed operation and lower power consumption can be realized.

Cost reduction can be realized by forming the second driver 10103 andthe first gate driver 10104 over the same substrate as the pixel portion10102. Note that when unipolar transistors are used for the seconddriver 10103, the first gate driver 10104, and the pixel portion 10102,further cost reduction can be realized. As a structure of a pixelincluded in the pixel portion 10102, the pixel shown in Embodiment Mode10 can be employed.

As described above, cost reduction of a high-definition display devicecan be realized. Further, by mounting an IC chip including a functionalcircuit (memory or buffer) on a connection portion of the FPC 10105 andthe substrate 10100, a substrate area can be effectively utilized.

Further, a signal control circuit 10111, a first gate driver 10114, anda second gate driver 10113 in FIG. 101B corresponding to, the signalcontrol circuit 10001, the first gate driver 10003, and the second gatedriver 10006 in FIG. 100A may be formed over an IC chip and mounted on adisplay panel by COG or the like. In this case, reduction in powerconsumption of a high-definition display device can be realized.Accordingly, in order to obtain a display device with lower powerconsumption, amorphous silicon is preferably used for a semiconductorlayer of a transistor used in the pixel portion. Note that a substrate10110, a pixel portion 10112, an FPC 10115, an IC chip 10116, an IC chip10117, a sealing substrate 10118, and a sealing material 10119 in FIG.101B correspond to the substrate 10010, the pixel portion 10002, the FPC10009, the IC chip 10019, an IC chip 10022, the sealing substrate 10004,and the sealing material 10005 in FIG. 100A.

Further cost reduction can be realized by using amorphous silicon for asemiconductor layer of a transistor in the pixel portion 10112.Moreover, a large display panel can be manufactured as well.

Further, the second gate driver, the first gate driver, and the signalline control circuit are not always provided in a row direction and acolumn direction of the pixels. For example, a peripheral driver circuit7501 formed over an IC chip as shown in FIG. 75A may have functions ofthe first gate driver 10114, the second gate driver 10113, and thesignal control circuit 10111 in FIG. 101B. Note that a substrate 7500, apixel portion 7502, an FPC 7504, an IC chip 7505, an IC chip 7506, asealing substrate 7507, and a sealing material 7508 in FIG. 75Acorrespond to the substrate 10010, the pixel portion 10002, the FPC10009, the IC chip 10019, the IC chip 10022, the sealing substrate10004, and the sealing material 10005 in FIG. 100A.

FIG. 75B is a schematic diagram showing connections of wirings of thedisplay device shown in FIG. 75A. The display device includes asubstrate 7510, a peripheral driver circuit 7511, a pixel portion 7512,an FPC 7513, and an FPC 7514. A signal and a power supply potential areexternally input from the FPC 7513 to the peripheral driver circuit7511. An output from the peripheral driver circuit 7511 is input towirings in the row direction and the column direction, which areconnected to the pixels included in the pixel portion 7512.

FIGS. 76A and 76B show examples of light-emitting elements which can beapplied to the light-emitting element 10018. That is, a structure of alight-emitting element which can be applied to the pixels shown in theaforementioned embodiment modes is described with reference to FIGS. 76Aand 76B.

A light-emitting element in FIG. 76A has an element structure where ananode 7602, a hole injecting layer 7603 formed of a hole injectingmaterial, a hole transporting layer 7604 formed of a hole transportingmaterial, a light-emitting layer 7605, an electron transporting layer7606 formed of an electron transporting material, an electron injectinglayer 7607 formed of an electron injecting material, and a cathode 7608are stacked over a substrate 7601. Here, the light-emitting layer 7605is formed of only one kind of a light-emitting material in some casesand formed of two or more kinds of materials in other cases. Note that astructure of the element is not limited thereto.

In addition to a stacked-layer structure shown in FIG. 76A, in whichfunctional layers are stacked, there are wide variations such as anelement formed using a high molecular compound and a high efficiencyelement utilizing a triplet light-emitting material which emits light inreturning from a triplet excitation state in a light-emitting layer.These variations can also be applied to a white light-emitting elementwhich can be obtained by dividing a light-emitting region into tworegions by controlling a recombination region of carriers using a holeblocking layer, and the like.

As an element forming method of this embodiment mode shown in FIG. 76A,a hole injecting material, a hole transporting material, and alight-emitting material are sequentially deposited over the substrate7601 including the anode 7602 (ITO). Next, an electron transportingmaterial and an electron injecting material are deposited, and finallythe cathode 7608 is formed by evaporation.

Next, materials preferable for the hole injecting material, the holetransporting material, the electron transporting material, the electroninjecting material, and the light-emitting material are described asfollows.

As the hole injecting material, an organic compound such as aporphyrin-based compound, phthalocyanine (hereinafter referred to asH₂Pc), copper phthalocyanine (hereinafter referred to as CuPc), or thelike is effective. A material which has a lower ionization potentialthan that of the hole transporting material to be used and has a holetransporting function can also be used as the hole injecting material.Further, a material obtained by chemically doping a conductive highmolecular compound, such as polyaniline and polyethylene dioxythiophene(hereinafter referred to as PEDOT) doped with polystyrene sulfonate(hereinafter referred to as PSS), may also employed. Further, aninsulating high molecular compound is effective in planarization of theanode, and polyimide (hereinafter referred to as PI) is often used.Further, an inorganic compound is also used, such as an ultrathin filmof aluminum oxide (hereinafter referred to as alumina) as well as a thinfilm of a metal such as gold or platinum.

As the hole transporting material, an aromatic amine-based compound(that is, a compound having a benzene ring-nitrogen bond) is most widelyused. A material widely used as the hole transporting material includes4,4′-bis(diphenylamino)-biphenyl (hereinafter referred to as TAD),derivatives thereof such as4,4′-bis[N-(3-methylphenyl)-N-phenyl-amino]-biphenyl (hereinafterreferred to as TPD) and 4,4′-bis[N-(1-naphthyl)-N-phenyl-amino]-biphenyl(hereinafter referred to as α-NPD), and starburst aromatic aminecompounds such as 4,4′,4″-tris(N,N-diphenyl-amino)-triphenylamine(hereinafter referred to as TDATA) and4,4′,4″-tris[N-(3-methylphenyl)-N-phenyl-amino]-triphenylamine(hereinafter referred to as MTDATA).

As the electron transporting material, a metal complex is often used,which includes a metal complex having a quinoline skeleton or abenzoquinoline skeleton, such as Alq, BAlq,tris(4-methyl-8-quinolinolato)aluminum (hereinafter referred to asAlmq), and bis(10-hydroxybenzo[h]-quinolinato)beryllium (hereinafterreferred to as Bebq). In addition, a metal complex having anoxazole-based or thiazole-based ligand such asbis[2-(2-hydroxyphenyl)-benzoxazolato]zinc (hereinafter referred to asZn(BOX)₂) and bis[2-(2-hydroxyphenyl)-benzothiazolato]zinc (hereinafterreferred to as Zn(BTZ)₂) may be employed. Further, in addition to themetal complexes, oxadiazole derivatives such as2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (hereinafterreferred to as PBD) and OXD-7, triazole derivatives such as TAZ and3-(4-tert-butylphenyl)-4-(4-ethylphenyl)-5-(4-biphenylyl)-1,2,4-triazole(hereinafter referred to as p-EtTAZ), and phenanthroline derivativessuch as bathophenanthroline (hereinafter referred to as BPhen) and BCPhave electron transporting properties.

As the electron injecting material, the above-mentioned electrontransporting materials can be used. In addition, an ultrathin film of aninsulator, for example, metal halide such as calcium fluoride, lithiumfluoride, or cesium fluoride or alkali metal oxide such as lithium oxideis often used. Further, an alkali metal complex such as lithium acetylacetonate (hereinafter referred to as Li(acac)) or8-quinolinolato-lithium (hereinafter referred to as Liq) is alsoeffective.

As the light-emitting material, in addition to the above-mentioned metalcomplexes such as Alq, Almq, BeBq, BAlq, Zn(BOX)₂, and Zn(BTZ)₂, variousfluorescent pigments are effective. The fluorescent pigments include4,4′-bis(2,2-diphenyl-vinyl)-biphenyl, which is blue, and4-(dicyanomethylene)-2-methyl-64-dimethylaminostyryl)-4H-pyran, which isred-orange, and the like. In addition, a triplet light-emittingmaterial, which mainly includes a complex with platinum or iridium as acentral metal, may also be employed. As the triplet light-emittingmaterial, tris(2-phenylpyridine)iridium,bis(2-(4′-tolyl)pyridinato-N,C^(2′))acetylacetonato iridium (hereinafterreferred to as acaclr(tpy)₂),2,3,7,8,12,13,17,18-octaethyl-21H,23Hporphyrin-platinum, and the likeare known.

By using the materials having each function as described above incombination, a light-emitting element with high reliability can beformed.

A light-emitting element in which layers are formed in reverse order ofthat in FIG. 76A can also be used for the display element 6521 inEmbodiment Mode 10. That is, a cathode 7618, an electron injecting layer7617 formed of an electron injecting material, an electron transportinglayer 7616 formed of an electron transporting material, a light-emittinglayer 7615, a hole transporting layer 7614 formed of a hole transportingmaterial, a hole injecting layer 7613 formed of a hole injectingmaterial, and an anode 7612 are sequentially stacked over a substrate7611.

In addition, at least one of the anode and the cathode of thelight-emitting element is needed to be transparent in order to extractlight emission. A transistor and a light-emitting element are formedover a substrate. A pixel structure of a display device of the inventioncan be applied to a light-emitting element having any light emissionstructure as follows: a top emission structure where light emission isextracted from a surface on the side opposite to a substrate a bottomemission structure where light emission is extracted from a surface onthe substrate side, and a dual emission structure where light emissionis extracted from both the surface on the substrate side and the surfaceon the side opposite to the substrate. A pixel structure of the displaydevice in the invention can be applied to a light-emitting elementhaving any emission structure.

A light-emitting element having a top emission structure is describedwith reference to FIG. 77A.

A driving transistor 7701 is formed over a substrate 7700. A firstelectrode 7702 is formed in contact with a source terminal of thedriving transistor 7701, and a layer 7703 containing an organic compoundand a second electrode 7704 are formed thereover.

The first electrode 7702 is an anode of the light-emitting element. Thesecond electrode 7704 is a cathode of the light-emitting element. Thatis, a region where the layer 7703 containing the organic compound isinterposed between the first electrode 7702 and the second electrode7704 functions as the light-emitting element.

As a material used for the first electrode 7702 functioning as theanode, a material having a high work function is preferably used. Forexample, a single-layer film of a titanium nitride film, a chromiumfilm, a tungsten film, a Zn film, a Pt film, or the like, astacked-layer structure of a titanium nitride film and a film containingaluminum as its main component, a three-layer structure of a titaniumnitride film, a film containing aluminum as its main component, and atitanium nitride film, or the like can be used. Note that in the case ofa stacked-layer structure, the resistance as a wiring is low, a goodohmic contact can be obtained, and further, a function as an anode canbe obtained. By using a metal film which reflects light, an anode whichdoes not transmit light can be formed.

As a material used for the second electrode 7704 functioning as thecathode, a stacked-layer structure of a thin metal film formed of amaterial having a low work function (Al, Ag, Li, Ca, or an alloy thereofsuch as MgAg, MgIn, AlLi, CaF₂, or calcium nitride) and a transparentconductive film (ITO (Indium Tin Oxide), indium zinc oxide (IZO), zincoxide (ZnO), or the like) is preferably used. By using a thin metal filmand a transparent conductive film having light-transmitting properties,a cathode which can transmit light can be formed.

As described above, light from the light-emitting element can beextracted from a top surface as shown by an arrow in FIG. 77A. That is,when the display panel shown in FIGS. 100A and 100B is employed, lightis emitted toward the sealing substrate 10004 side. Therefore, when alight-emitting element having a top emission structure is employed in adisplay device, a substrate having light-transmitting properties is usedas the sealing substrate 10004.

When an optical film is provided, the sealing substrate 10004 isprovided with an optical film.

Note that a metal film formed of a material having a low work function,such as MgAg, MgIn, or AlLi, which functions as a cathode, can be usedfor the first electrode 7702. In this case, a light-emitting conductivefilm such as an ITO (Indium Tin Oxide) film or an indium zinc oxide(IZO) film can be used for the second electrode 7704. Therefore, thetransmittance of the top light emission can be improved with thisstructure.

Next, a light-emitting element having a bottom emission structure isdescribed with reference to FIG. 77B. The same reference numerals asthose in FIG. 77A are used since the structure of the light-emittingelement is the same except for the light emission structure.

Here, as a material used for the first electrode 7702 functioning as theanode, a material having a high work function is preferably used. Forexample, a transparent conductive film such as an ITO (Indium Tin Oxide)film or an indium zinc oxide (IZO) film can be used. By using atransparent conductive film having light-transmitting properties, ananode which can transmit light can be formed.

As a material used for the second electrode 7704 functioning as thecathode, a metal film formed of a material having a low work function(Al, Ag, Li, Ca, or an alloy thereof such as MgAg, MgIn, AlLi, CaF₂, orCa₃N₂) can be used. By using a metal film which reflects light, acathode which does not transmit light can be formed.

As described above, light from the light-emitting element can beextracted from a bottom surface as shown by an arrow in FIG. 77B. Thatis, when the display panel shown in FIGS. 100A and 100B is employed,light is emitted toward the substrate 10010 side. Therefore, when alight-emitting element having a bottom emission structure is employed ina display device, a substrate having light-transmitting properties isused as the substrate 10010.

When an optical film is provided, the substrate 10010 is provided withan optical film.

Next, a light-emitting element having a dual emission structure isdescribed with reference to FIG. 77C. The same reference numerals asthose in FIG. 77A are used since the structure of the light-emittingelement is the same except for the light emission structure.

Here, as a material used for the first electrode 7702 functioning as theanode, a material having a high work function is preferably used. Forexample, a transparent conductive film such as an ITO (Indium Tin Oxide)film or an indium zinc oxide (IZO) film can be used. By using atransparent conductive film having light-transmitting properties, ananode which can transmit light can be formed.

As a material used for the second electrode 7704 functioning as thecathode, a stacked-layer structure of a thin metal film formed of amaterial having a low work function (Al, Ag, Li, Ca, or an alloy thereofsuch as MgAg, MgIn, AlLi, CaF₂, or calcium nitride) and a transparentconductive film (ITO (Indium Tin Oxide), indium oxide zinc-oxide alloy(In₂O₃—ZnO), zinc oxide (ZnO), or the like) can be used. By using a thinmetal film and a transparent conductive film having light-transmittingproperties, a cathode which can transmit light can be formed.

As described above, light from the light-emitting element can beextracted from both sides as shown by arrows in FIG. 77C. That is, whenthe display panel shown in FIGS. 100A and 100B is employed, light isemitted toward the substrate 10010 side and the sealing substrate 10004side. Therefore, when a light-emitting element having a dual emissionstructure is employed in a display device, substrates havinglight-transmitting properties are used for both the substrate 10010 andthe sealing substrate 10004.

When an optical film is provided, both the substrate 10010 and thesealing substrate 10004 are provided with optical films.

In addition, the invention can be applied to a display device in whichfull color display is realized by using a white light-emitting elementand a color filter.

As shown in FIG. 78, a base film 7802 is formed over a substrate 7800,and a driving transistor 7801 is formed thereover. A first electrode7803 is formed in contact with a source terminal of the drivingtransistor 7801, and a layer 7804 containing an organic compound and asecond electrode 7805 are formed thereover.

The first electrode 7803 is an anode of a light-emitting element. Thesecond electrode 7805 is a cathode of the light-emitting element. Thatis, a region where the layer 7804 containing the organic compound isinterposed between the first electrode 7803 and the second electrode7805 functions as the light-emitting element. In the structure shown inFIG. 78, white light is emitted. A red color filter 7806R, a green colorfilter 7806G, and a blue color filter 7806B are provided over thelight-emitting element; thus, full color display can be performed.Further, a black matrix (also referred to as a BM) 7807 which separatesthese color filters is provided.

The aforementioned structures of the light-emitting element can be usedin combination and can be applied to the display device of the inventionas appropriate. The structures of the display panel and thelight-emitting element described above are examples, and the pixelstructure can also be applied to a display device having anotherstructure.

Next, a partial cross-sectional view of a pixel portion in a displaypanel is shown.

First, the case where a crystalline semiconductor film (polysilicon(p-Si:H) film) is used as a semiconductor layer of a transistor isdescribed with reference to FIGS. 79A, 79B, 80A, and 80B.

Here, the semiconductor layer is obtained by forming an amorphoussilicon (a-Si) film over a substrate by a known film formation method,for example. Note that it is not limited to the amorphous silicon film,and any semiconductor film having an amorphous structure (including amicrocrystalline semiconductor film) may be used. Further, a compoundsemiconductor film having an amorphous structure, such as an amorphoussilicon germanium film, may be used.

Then, the amorphous silicon film is crystallized by a lasercrystallization method, a thermal crystallization method using RTA or anannealing furnace, a thermal crystallization method using a metalelement which promotes crystallization, or the like. It is needless tosay that such crystallization methods may be performed in combination.

As a result of the aforementioned crystallization, a crystallized regionis formed in part of the amorphous semiconductor film.

Further, the crystalline semiconductor film in which part is made morecrystallized is patterned into a desired shape, and an island-shapedsemiconductor film is formed of the crystallized region. Thissemiconductor film is used as the semiconductor layer of the transistor.

As shown in FIG. 79A, a base film 7902 is formed over a substrate 7901,and a semiconductor layer is formed thereover. The semiconductor layerincludes a channel formation region 7903, an impurity region 7905 to bea source region or a drain region of a driving transistor 7918; and achannel formation region 7906, an LDD region 7907, and an impurityregion 7908 to be a lower electrode of a capacitor 7919. Note thatchannel doping may be performed on the channel formation regions 7903and 7906.

As the substrate, a glass substrate, a quartz substrate, a ceramicsubstrate, a plastic substrate, or the like can be used. As the basefilm 7902, a single layer of aluminum nitride, silicon oxide, siliconoxynitride, or the like, or stacked layers thereof can be used.

A gate electrode 7910 and an upper electrode 7911 of the capacitor areformed over the semiconductor layer with a gate insulating film 7909interposed therebetween.

An interlayer insulator 7912 is formed to cover the driving transistor7918 and the capacitor 7919. A wiring 7913 is in contact with theimpurity region 7905 over the interlayer insulator 7912 through acontact hole. A pixel electrode 7914 is formed in contact with thewiring 7913. A second interlayer insulator 7915 is formed to cover endportions of the pixel electrode 7914 and the wiring 7913. Here, thesecond interlayer insulator 7915 is formed using a positivephotosensitive acrylic resin film. Then, a layer 7916 containing anorganic compound and an opposite electrode 7917 are formed over thepixel electrode 7914. A light-emitting element 7920 is formed in aregion where the layer 7916 containing the organic compound isinterposed between the pixel electrode 7914 and the opposite electrode7917.

Alternatively, as shown in FIG. 79B, a region 7921 may be provided sothat the LDD region which forms part of the lower electrode of thecapacitor 7919 overlaps with the upper electrode 7911. Note thatportions in common with those in FIG. 79A are denoted by the samereference numerals, and description thereof is omitted.

Alternatively, as shown in FIG. 80A, a second upper electrode 8091 whichis formed in the same layer as the wiring 7913 in contact with theimpurity region 7905 of the driving transistor 7918 may be included.Note that portions in common with those in FIG. 79A are denoted by thesame reference numerals, and description thereof is omitted. Theinterlayer insulator 7912 is interposed between the second upperelectrode 8091 and the upper electrode 7911 to form a second capacitor.Since the second upper electrode 8091 is in contact with the impurityregion 7908, a first capacitor having a structure where the base film7902 is interposed between the upper electrode 7911 and the channelformation region 7906, and the second capacitor having a structure wherethe interlayer insulator 7912 is interposed between the upper electrode7911 and the second upper electrode 8091 are connected in parallel, sothat a capacitor 8092 including the first capacitor and the secondcapacitor is formed. Since the capacitor 8092 has the total capacitanceof the first capacitor and the second capacitor, the capacitor having alarge capacitance can be formed in a small area. That is, when it isused for the capacitor in the pixel structure of the display device inthe invention, an aperture ratio can be further improved.

Alternatively, a capacitor may have a structure shown in FIG. 80B. Abase film 8002 is formed over a substrate 8001, and a semiconductorlayer is formed thereover. The semiconductor layer includes a channelformation region 8003 and an impurity region 8005 to be a source regionor a drain region of a driving transistor 8018. Note that channel dopingmay be performed on the channel formation region 8003.

As the substrate, a glass substrate, a quartz substrate, a ceramicsubstrate, a plastic substrate, or the like can be used. As the basefilm 8002, a single layer of aluminum nitride, silicon oxide, siliconoxynitride, or the like, or stacked layers thereof can be used.

A gate electrode 8007 and a first electrode 8008 are formed over thesemiconductor layer with a gate insulating film 8006 interposedtherebetween.

A first interlayer insulator 8009 is formed to cover the drivingtransistor 8018 and the first electrode 8008. A wiring 8010 is incontact with the impurity region 8005 over the first interlayerinsulator 8009 through a contact hole. A second electrode 8011 is formedof the same material and in the same layer as the wiring 8010.

Further, a second interlayer insulator 8012 is formed to cover thewiring 8010 and the second electrode 8011. A pixel electrode 8013 isformed in contact with the wiring 8010 over the second interlayerinsulator 8012 through a contact hole. A third electrode 8014 is formedof the same material and in the same layer as the pixel electrode 8013.Here, a capacitor 8019 including the first electrode 8008, the secondelectrode 8011, and the third electrode 8014 is formed.

A third interlayer insulator 8015 is formed to cover the pixel electrode8013 and the third electrode 8014. Then, a layer 8016 containing anorganic compound and an opposite electrode 8017 are formed over thethird interlayer insulator 8015 and the third electrode 8014. Alight-emitting element 8020 is formed in a region where the layer 8016containing the organic compound is interposed between the pixelelectrode 8013 and the opposite electrode 8017.

As described above, the structures shown in FIGS. 79A, 79B, 80A, and 80Bare examples of a structure of a transistor in which a crystallinesemiconductor film is used for its semiconductor layer. Note that thestructures of the transistor shown in FIGS. 79A, 79B, 80A, and 80B areexamples of a top gate transistor. That is, the transistor may be aP-channel transistor or an N-channel transistor. In the case of anN-channel transistor, the LDD region may overlap with the gate electrodeor not, or part of the LDD region may overlap with the gate electrode.Further, the gate electrode may have a tapered shape, and the LDD regionmay be provided below the tapered portion of the gate electrode in aself-aligned manner. In addition, the number of gate electrodes is notlimited to two, and a multigate structure with three or more gateelectrodes may be employed, or a single gate structure may also beemployed.

By using a crystalline semiconductor film for a semiconductor layer(such as a channel formation region, a source region, and a drainregion) of a transistor included in the pixel of the display device inthe invention, for example, the first gate driver 10003, the second gatedriver 10006, and the signal control circuit 10001 are easily formedover the same substrate as the pixel portion 10002 in FIG. 100A.

As a structure of a transistor which uses polysilicon for itssemiconductor layer, FIGS. 81A and 81B each show a partial cross sectionof a display panel using a transistor having a structure where a gateelectrode is interposed between a substrate and a semiconductor layer,that is, a bottom gate structure where a gate electrode is located belowa semiconductor layer.

A base film 8102 is formed over a substrate 8101. Then, a gate electrode8103 is formed over the base film 8102. A first electrode 8104 is formedin the same layer and of the same material as the gate electrode 8103.As a material for the gate electrode 8103, polycrystalline silicon towhich phosphorus is added can be used. In addition to polycrystallinesilicon, silicide which is a compound of metal and silicon may be used.

Then, a gate insulating film 8105 is formed to cover the gate electrode8103 and the first electrode 8104. As the gate insulating film 8105, asilicon oxide film, a silicon nitride film, or the like is used.

A semiconductor layer is formed over the gate insulating film 8105. Thesemiconductor layer includes a channel formation region 8106, an LDDregion 8107, and an impurity region 8108 to be a source region or adrain region of a driving transistor 8122; and a channel formationregion 8109, an LDD region 8110, and an impurity region 8111 which areto be as a second electrode of a capacitor 8123. Note that channeldoping may be performed to the channel formation regions 8106 and 8109.

As the substrate, a glass substrate, a quartz substrate, a ceramicsubstrate, a plastic substrate, or the like can be used. As the basefilm 8102, a single layer of aluminum nitride, silicon oxide, siliconoxynitride, or the like, or stacked layers thereof can be used.

A first interlayer insulator 8112 is formed to cover the semiconductorlayer. A wiring 8113 is in contact with the impurity region 8108 overthe first interlayer insulator 8112 through a contact hole. A thirdelectrode 8114 is formed in the same layer and of the same material asthe wiring 8113. The capacitor 8123 including the first electrode 8104,the second electrode, and the third electrode 8114 is formed.

In addition, an opening 8115 is formed in the first interlayer insulator8112. A second interlayer insulator 8116 is formed to cover the drivingtransistor 8122, the capacitor 8123, and the opening 8115. A pixelelectrode 8117 is formed over the second interlayer insulator 8116through a contact hole. Then, an insulator 8118 is formed to cover anend portion of the pixel electrode 8117 by using a positivephotosensitive acrylic resin film, for example. A layer 8119 containingan organic compound and an opposite electrode 8120 are formed over thepixel electrode 8117. A light-emitting element 8121 is formed in aregion where the layer 8119 containing the organic compound isinterposed between the pixel electrode 8117 and the opposite electrode8120. The opening 8115 is located below the light-emitting element 8121.That is, when light emitted from the light-emitting element 8121 isextracted from the substrate side, the transmittance can be improvedsince the opening 8115 is provided.

Further, a structure as shown in FIG. 81B may be employed, in which afourth electrode 8124 is formed in the same layer and of the samematerial as the pixel electrode 8117 in FIG. 81A. Thus, the capacitor8123 including the first electrode 8104, the second electrode, the thirdelectrode 8114, and the fourth electrode 8124 can be formed.

Next, the case where an amorphous silicon (a-Si:H) film is used for thesemiconductor layer of the transistor is described. FIGS. 82A and 82Bshow the case of a top gate transistor. FIGS. 83A, 83B, 84A, and 84Bshow the case of a bottom gate transistor.

FIG. 82A shows a cross section of a top gate transistor in whichamorphous silicon is used for its semiconductor layer. A base film 8202is formed over a substrate 8201. A pixel electrode 8203 is formed overthe base film 8202. A first electrode 8204 is formed in the same layerand of the same material as the pixel electrode 8203.

As the substrate, a glass substrate, a quartz substrate, a ceramicsubstrate, or the like can be used. As the base film 8202, a singlelayer of aluminum nitride, silicon oxide, silicon oxynitride, or thelike, or stacked layers thereof can be used.

A wiring 8205 and a wiring 8206 are formed over the base film 8202, andan end portion of the pixel electrode 8203 is covered with the wiring8205. An n-type semiconductor layer 8207 and an n-type semiconductorlayer 8208 having n-type conductivity are formed over the wiring 8205and the wiring 8206. In addition, a semiconductor layer 8209 is formedbetween the wiring 8205 and the wiring 8206 and over the base film 8202.Part of the semiconductor layer 8209 is extended over the n-typesemiconductor layers 8207 and 8208. Note that this semiconductor layeris formed of a non-crystalline semiconductor film such as an amorphoussilicon (a-Si:H) film or a microcrystalline semiconductor (μ-Si:H) film.Further, a gate insulating film 8210 is formed over the semiconductorlayer 8209. An insulating film 8211 formed in the same layer and of thesame material as the gate insulating film 8210 is also formed over thefirst electrode 8204. Note that as the gate insulating film 8210, asilicon oxide film, a silicon nitride film, or the like is used.

A gate electrode 8212 is formed over the gate insulating film 8210. Asecond electrode 8213 formed in the same layer and of the same materialas the gate electrode is formed over the first electrode 8204 with theinsulating film 8211 interposed therebetween. A capacitor 8219 in whichthe insulating film 8211 is interposed between the first electrode 8204and the second electrode 8213 is formed. An interlayer insulating film8214 is formed to cover an end portion of the pixel electrode 8203, adriving transistor 8218, and the capacitor 8219.

A layer 8215 containing an organic compound and an opposite electrode8216 are formed over the interlayer insulating layer 8214 and the pixelelectrode 8203 located in an opening of the interlayer insulating film8214. A light-emitting element 8217 is formed in a region where thelayer 8215 containing the organic compound is interposed between thepixel electrode 8203 and the opposite electrode 8216.

As shown in FIG. 82B, a first electrode 8220 may be formed instead ofthe first electrode 8204 in FIG. 82A. The first electrode 8220 is formedin the same layer and of the same material as the wirings 8205 and 8206.

FIGS. 83A and 83B each show a partial cross-sectional view of a panel ina display device using a bottom gate transistor in which amorphoussilicon is used for its semiconductor layer.

A base film 8302 is formed over a substrate 8301. A gate electrode 8303is formed over the base film 8302. A first electrode 8304 is formed inthe same layer and of the same material as the gate electrode. As amaterial for the gate electrode 8303, polycrystalline silicon to whichphosphorus is added can be used. In addition to polycrystalline silicon,silicide which is a compound of a metal and silicon may be employed.

A gate insulating film 8305 is formed to cover the gate electrode 8303and the first electrode 8304. As the gate insulating film 8305, asilicon oxide film, a silicon nitride film, or the like is used.

A semiconductor layer 8306 is formed over the gate insulating film 8305.A semiconductor layer 8307 is formed in the same layer and of the samematerial as the semiconductor layer 8306.

As the substrate, a glass substrate, a quartz substrate, a ceramicsubstrate, or the like can be used. As the base film 8302, a singlelayer of aluminum nitride, silicon oxide, silicon oxynitride, or thelike, or stacked layers thereof can be used.

N-type semiconductor layers 8308 and 8309 having n-type conductivity areformed over the semiconductor layer 8306. A n-type semiconductor layer8310 is formed over the semiconductor layer 8307.

Wirings 8311 and 8312 are formed over the n-type semiconductor layers8308 and 8309 respectively. A conductive layer 8313 formed in the samelayer and of the same material as the wirings 8311 and 8312 is formedover the n-type semiconductor layer 8310.

A second electrode including the semiconductor layer 8307, the n-typesemiconductor layer 8310, and the conductive layer 8313 is formed. Notethat a capacitor 8320 in which the base film 8302 is interposed betweenthe second electrode and the first electrode 8304 is formed.

One end portion of the wiring 8311 is extended, and a pixel electrode8314 is formed on and in contact with the extended wiring 8311.

An insulator 8315 is formed to cover an end portion of the pixelelectrode 8314, a driving transistor 8319, and the capacitor 8320.

A layer 8316 containing an organic compound and an opposite electrode8317 are formed over the pixel electrode 8314 and the insulator 8315. Alight-emitting element 8318 is formed in a region where the layer 8316containing the organic compound is interposed between the pixelelectrode 8314 and the opposite electrode 8317.

Note that the semiconductor layer 8307 and the n-type semiconductorlayer 8310 to be part of a second electrode of the capacitor 8320 arenot always formed. That is, the second electrode of the capacitor 8320may be the conductive layer 8313 so that the capacitor 8320 has astructure where the gate insulating film is interposed between the firstelectrode 8304 and the conductive layer 8313.

Note that in FIG. 83A, when the pixel electrode 8314 is formed beforethe wiring 8311 is formed, a capacitor 8322 can be formed, as shown inFIG. 83B, in which the gate insulating film 8305 is interposed between asecond electrode 8321 formed of the pixel electrode 8314 and the firstelectrode 8304.

Note that although FIGS. 83A and 83B show examples of an invertedstaggered channel-etched transistor, a channel protective transistor mayalso be used. The case of a channel protective transistor is describedwith reference to FIGS. 84 A and 84B.

A channel protective transistor in FIG. 84A is different from thedriving transistor 8319 having a channel-etched structure shown in FIG.83A in that an insulator 8401 to be an etching mask is provided over aregion where a channel of the semiconductor layer 8306 is formed. Commonportions except that point are denoted by the same reference numerals.

Similarly, a channel protective transistor shown in FIG. 84B isdifferent from the driving transistor 8319 having a channel-etchedstructure shown in FIG. 83B in that the insulator 8401 to be an etchingmask is provided over the region where a channel of the semiconductorlayer 8306 is formed. Common portions except that point are denoted bythe same reference numerals.

When an amorphous semiconductor film is used for a semiconductor layer(such as a channel forming region, a source region, and a drain region)of a transistor included in the pixel of the display device in theinvention, manufacturing cost can be reduced. For example, when thepixel structure shown in FIGS. 66 and 67 is used, an amorphoussemiconductor film can be employed.

Note that the structures of the transistor and the capacitor which canbe applied to the pixel structure of the display device in the inventionare not limited to the aforementioned structure, and various structuresof a transistor and a capacitor can be employed.

When the structure of each display device shown in the aforementionedembodiment modes is used for driving a display panel, deterioration incharacteristics of a transistor can be suppressed. Thus, malfunction ofa shift register due to deterioration in characteristics of thetransistor can be prevented. Further, a display defect of the displaypanel due to malfunction of the shift register can be suppressed.

Note that each structure of the display panel shown in this embodimentmode can be implemented in free combination with the structure of eachdisplay device shown in other embodiment modes in this specification.Further, the structures of the display panel shown in this embodimentmode can be implemented in free combination with each other.

Embodiment Mode 15

In this embodiment mode, a method of forming a semiconductor device towhich the invention can be applied and which includes a thin filmtransistor (TFT) is described with reference to drawings.

FIGS. 85A to 85G are diagrams showing examples of a structure and amanufacturing process of a TFT included in the semiconductor device towhich the invention can be applied. FIG. 85A is a diagram showing anexample of a structure of the TFT included in the semiconductor deviceto which the invention can be applied. FIGS. 85B to 85G are diagramsshowing an example of a manufacturing process of the TFT included in thesemiconductor device to which the invention can be applied. Note that astructure and a manufacturing process of a TFT included in thesemiconductor device to which the invention can be applied are notlimited to those in FIGS. 85A to 85G, and various structures andmanufacturing processes can be used.

First, an example of a structure of the TFT included in thesemiconductor device to which the invention can be applied is describedwith reference to FIG. 85A. FIG. 85A is a cross-sectional view of aplurality of TFTs each having a different structure. Here, in FIG. 85A,the plurality of TFTs each having a different structure are juxtaposed,which is for describing structures of TFTs included in the semiconductordevice to which the invention can be applied. Therefore, the TFTsincluded in the semiconductor device to which the invention can beapplied are not needed to be actually juxtaposed as shown in FIG. 85Aand can be separately formed if needed.

Next, characteristics of each layer forming the TFT included in thesemiconductor device to which the invention can be applied aredescribed.

A substrate 8511 can be a glass substrate using barium borosilicateglass, alumino borosilicate glass, or the like, a quartz substrate, aceramic substrate, a metal substrate containing stainless steel, or thelike. In addition, a substrate formed of plastics typified bypolyethylene terephthalate (PET), polyethylene naphthalate (PEN), orpolyethersulfone (PES), or a substrate formed of a flexible syntheticresin such as acrylic can also be used. By using a flexible substrate, asemiconductor device capable of being bent can be formed. In addition,such a substrate has no strict limitations on an area or a shapethereof. Therefore, for example, when a substrate having a rectangularshape, each side of which is 1 meter or more, is used as the substrate8511, productivity can be significantly improved. Such an advantage ishighly favorable as compared with the case where a circular siliconsubstrate is used.

An insulating film 8512 functions as a base film and is provided toprevent alkali metal such as Na or alkaline earth metal from thesubstrate 8511 from adversely affecting characteristics of asemiconductor element. The insulating film 8512 can have a single-layerstructure or a stacked-layer structure of an insulating film containingoxygen or nitrogen, such as silicon oxide, silicon nitride, siliconoxynitride, or silicon nitride oxide. For example, when the insulatingfilm 8512 is provided to have a two-layer structure, it is preferablethat a silicon nitride oxide film be used as a first insulating film anda silicon oxynitride film be used as a second insulating film. When theinsulating film 8512 is provided to have a three-layer structure, it ispreferable that a silicon oxynitride film be used as a first insulatingfilm, a silicon nitride film be used as a second insulating film, and asilicon oxynitride film be used as a third insulating film.

Semiconductor films 8513, 8514, and 8515 can be formed using anamorphous semiconductor or a semi-amorphous semiconductor (SAS).Alternatively, a polycrystalline semiconductor film may be used. SAS isa semiconductor having an intermediate structure between amorphous andcrystalline (including single crystal and polycrystalline) structuresand having a third state which is stable in free energy. Moreover, SASincludes a crystalline region with a short range order and latticedistortion. A crystalline region of 0.5 to 20 nm can be observed atleast in part of a film. When silicon is contained as a main component,Raman spectrum shifts to a wave number side lower than 520 cm⁻¹. Thediffraction peaks of (111) and (220) which are thought to be derivedfrom a silicon crystalline lattice are observed by X-ray diffraction.SAS contains hydrogen or halogen of at least 1 atomic % or more toterminate dangling bonds. SAS is formed by glow discharge decomposition(plasma CVD) of a gas containing silicon. As the gas containing silicon,Si₂H₆, SiH₂Cl₂, SiHCl₃, SiCl₄, SiF₄, or the like can be used in additionto SiH₄. Further, GeF₄ may be mixed. Alternatively, the gas containingsilicon may be diluted with H₂, or H₂ and one or more kinds of rare gaselements selected from He, Ar, Kr, and Ne. A dilution ratio may be inthe range of 2 to 1000 times, pressure may be in the range ofapproximately 0.1 to 133 Pa, a power supply frequency may be 1 to 120MHz and preferably 13 to 60 MHz, and a substrate heating temperature maybe 300° C. or lower. A concentration of impurities in atmosphericcomponents such as oxygen, nitrogen, and carbon is preferably 1×10²⁰cm⁻¹ or less as impurity elements in the film. In particular, an oxygenconcentration is 5×10¹⁹/cm³ or less, and preferably 1×10¹⁹/cm³ or less.Here, an amorphous silicon film is formed using a material containingsilicon (Si) as its main component (e.g., Si_(x)Ge_(1-x)) by a knownmethod (such as a sputtering method, an LPCVD method, or a plasma CVDmethod). Then, the amorphous silicon film is crystallized by a knowncrystallization method such as a laser crystallization method, a thermalcrystallization method using RTA or an annealing furnace, or a thermalcrystallization method using a metal element which promotescrystallization.

An insulating film 8516 can have a single-layer structure or astacked-layer structure of an insulating film containing oxygen ornitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, orsilicon nitride oxide.

A gate electrode 8517 can have a single-layer structure of a conductivefilm or a stacked-layer structure of two or three conductive films. As amaterial for the gate electrode 8517, a known conductive film can beused. For example, a single film of an element such as tantalum (Ta),titanium (Ti), molybdenum (Mo), tungsten (W), chromium (Cr), silicon(Si), or the like; a nitride film containing the element (typically, atantalum nitride film, a tungsten nitride film, or a titanium nitridefilm); an alloy film in which the elements are combined (typically, aMo—W alloy or a Mo—Ta alloy); a silicide film containing the element(typically, a tungsten silicide film or a titanium silicide film); andthe like can be used. Note that the aforementioned single film, nitridefilm, alloy film, silicide film, and the like can have a single-layerstructure or a stacked-layer structure.

An insulating film 8518 can have a single-layer structure or astacked-layer structure of an insulating film containing oxygen ornitrogen, such as silicon oxide, silicon nitride, silicon oxynitride, orsilicon nitride oxide; or a film containing carbon, such as a DLC(Diamond-Like Carbon), by a known method (such as a sputtering method ora plasma CVD method).

An insulating film 8519 can have a single-layer structure or astacked-layer structure of an organic material such as epoxy, polyimide,polyamide, polyvinyl phenol, benzocyclobutene, or acrylic; or a siloxaneresin, in addition to an insulating film containing oxygen or nitrogen,such as silicon oxide, silicon nitride, silicon oxynitride, or siliconnitride oxide; or a film containing carbon, such as a DLC (Diamond-LikeCarbon). Note that a siloxane resin corresponds to a resin havingSi—O—Si bonds. Siloxane includes a skeleton structure of a bond ofsilicon (Si) and oxygen (O). As a substituent, an organic groupcontaining at least hydrogen (such as an alkyl group or aromatichydrocarbon) is used. Alternatively, a fluoro group, or a fluoro groupand an organic group containing at least hydrogen can be used as asubstituent. Note that in the semiconductor device of the invention, theinsulating film 8519 can be provided to cover the gate electrode 8517directly without provision of the insulating film 8518.

As a conductive film 8523, a single film of an element such as Al, Ni,C, W, Mo, Ti, Pt, Cu, Ta, Au, Mn, or the like, a nitride film containingthe element, an alloy film in which the elements are combined, asilicide film containing the element, or the like can be used. Forexample, as an alloy containing a plurality of elements, an Al alloycontaining C and Ti, an Al alloy containing Ni, an Al alloy containing Cand Ni, an Al alloy containing C and Mn, or the like can be used. In thecase of a stacked-layer structure, a structure can be such that Al isinterposed between Mo, Ti, or the like; thus, resistance of Al to heatand chemical reaction can be improved.

Next, characteristics of each structure is described with reference tothe cross-sectional view of the plurality of TFTs each having adifferent structure in FIG. 85A.

Reference numeral 8501 denotes a single drain TFT. Since it can beformed by a simple method, it is advantageous in low manufacturing costand high yield. Here, the conductive films 8513 and 8515 each havedifferent concentration of impurities, and the semiconductor film 8513is used as a channel region and the semiconductor films 8515 are used asa source region and a drain region. By controlling the amount ofimpurities in this manner, resistivity of the semiconductor film can becontrolled. Further, an electrical connection state of the semiconductorfilm and the conductive film 8523 can be closer to ohmic contact. Notethat as a method of separately forming the semiconductor films eachincluding different amount of impurities, a method where impurities aredoped in the semiconductor film using the gate electrode 8517 as a maskcan be used.

Reference numeral 8502 denotes a TFT in which the gate electrode 8517has a certain tapered angle or more. Since it can be formed by a simplemethod, it is advantageous in low manufacturing cost and high yield.Here, the conductive films 8513, 8514, and 8515 each have differentconcentration of impurities. The semiconductor film 8513 is used as achannel region, the semiconductor films 8514 as lightly doped drain(LDD) regions, and the semiconductor films 8515 as a source region and adrain region. By controlling the amount of impurities in this manner,resistivity of the semiconductor film can be controlled. Further, anelectrical connection state of the semiconductor film and the conductivefilm 8523 can be closer to ohmic contact. Moreover, since the TFTincludes the LDD region, high electric field is hardly applied to theTFT, so that deterioration of the element due to hot carriers can besuppressed. Note that as a method of separately forming thesemiconductor films each including different amount of impurities, amethod where impurities are doped in the semiconductor film using thegate electrode 8517 as a mask can be used. In the TFT 8502, since thegate electrode 8517 has a certain tapered angle or more, gradient of theconcentration of impurities doped in the semiconductor film through thegate electrode 8517 can be provided, and the LDD region can be easilyformed.

Reference numeral 8503 denotes a TFT in which the gate electrode 8517includes at least two layers and a lower gate electrode is longer thanan upper gate electrode. When the gate electrode 8517 has such a shape,an LDD region can be formed without addition of a photomask. Note that astructure where the LDD region overlaps with the gate electrode 8517,like the TFT 8503, is particularly called a GOLD (Gate Overlapped LDD)structure. As a method of forming the gate electrode 8517 with such ashape, the following method may be used. First, when the gate electrode8517 is patterned, the lower and upper gate electrodes are etched by dryetching so that side surfaces thereof are inclined (tapered). Then, aninclination of the upper gate electrode is processed to be almostperpendicular by anisotropic etching. Thus, the gate electrode in whichthe lower gate electrode is longer that the upper gate electrode isformed. Thereafter, impurity elements are doped twice, so that thesemiconductor film 8513 used as a channel region, the semiconductorfilms 8514 used as LDD regions, and the semiconductor films 8515 used asa source terminal and a drain terminal are formed.

Note that part of the LDD region, which overlaps with the gate electrode8517, is referred to as an Lov region, and part of the LDD region, whichdoes not overlap with the gate electrode 8517, is referred to as an Loffregion. The Loff region is highly effective in suppressing anoff-current value, whereas it is not very effective in preventingdeterioration in an on-current value due to hot carriers by relieving anelectric field in the vicinity of the drain. On the other hand, the Lovregion is highly effective in preventing deterioration in the on-currentvalue by relieving the electric field in the vicinity of the drain,whereas it is not very effective in suppressing the off-current value.Thus, it is preferable to form a TFT having a structure corresponding toTFT characteristics required for each of the various circuits. Forexample, when the semiconductor device of the invention is used for adisplay device, a TFT having an Loff region is preferably used as apixel TFT in order to suppress the off-current value. On the other hand,as a TFT in a peripheral circuit, a TFT having an Lov region ispreferably used in order to prevent deterioration in the on-currentvalue by relieving the electric field in the vicinity of the drain.

Reference numeral 8504 denotes a TFT including a sidewall 8521 incontact with a side surface of the gate electrode 8517. When the TFTincludes the sidewall 8521, a region overlapping with the sidewall 8521can be made to be an LDD region.

Reference numeral 8505 denotes a TFT in which an LDD (Loft) region isformed by doping in the semiconductor film with use of a mask. Thus, theLDD region can surely be formed, and an off-current value of the TFT canbe reduced.

Reference numeral 8506 denotes a TFT in which an LDD (Lov) region isformed by doping in the semiconductor film with use of a mask. Thus, theLDD region can surely be formed, and deterioration in an on-currentvalue can be prevented by relieving the electric field in the vicinityof the drain of the TFT.

Next, an example of a manufacturing process of a TFT included in thesemiconductor device to which the invention can be applied is describedwith reference to FIGS. 85B to 85G. Note that a structure and amanufacturing process of a TFT included in the semiconductor device towhich the invention can be applied are not limited to those in FIGS. 85Ato 85G, and various structures and manufacturing processes can be used.

In the invention, a surface of the substrate 8511, the insulating film8512, the semiconductor film 8513, the semiconductor film 8514, thesemiconductor film 8515, the insulating film 8516, the insulating film8518, or the insulating film 8519 is oxidized or nitrided by plasmatreatment, so that the semiconductor film or the insulating film can beoxidized or nitrided. By oxidizing or nitriding the semiconductor filmor the insulating film by plasma treatment in such a manner, a surfaceof the semiconductor film or the insulating film is modified, and theinsulating film can be formed to be denser than an insulating filmformed by a CVD method or a sputtering method; thus, a defect such as apinhole can be suppressed, and characteristics and the like of thesemiconductor device can be improved.

First, the surface of the substrate 8511 is washed using hydrofluoricacid (HF), alkaline, or pure water. The substrate 8511 can be a glasssubstrate using barium borosilicate glass, alumino borosilicate glass,or the like, a quartz substrate, a ceramic substrate, a metal substratecontaining stainless steel, or the like. In addition, a substrate formedof plastics typified by polyethylene terephthalate (PET), polyethylenenaphthalate (PEN), or polyethersulfone (PES), or a substrate formed of aflexible synthetic resin such as acrylic can also be used. Here, thecase where a glass substrate is used as the substrate 8511 is shown.

Here, an oxide film or a nitride film may be formed on the surface ofthe substrate 8511 by oxidizing or nitriding the surface of thesubstrate 8511 by plasma treatment (FIG. 85B). Hereinafter, aninsulating film such as an oxide film or a nitride film formed byperforming plasma treatment on the surface is also referred to as aplasma-treated insulating film. In FIG. 85B, an insulating film 8531 isa plasma-treated insulating film. In general, when a semiconductorelement such as a thin film transistor is provided over a substrateformed of glass, plastic, or the like, an impurity element such asalkali metal (e.g., Na) or alkaline earth metal included in glass,plastic, or the like might be mixed into the semiconductor element sothat the semiconductor element is contaminated; thus, characteristics ofthe semiconductor element might be adversely affected. However,nitridation of a surface of the substrate formed of glass, plastic, orthe like can prevent an impurity element such as alkali metal (e.g., Na)or alkaline earth metal included in the substrate form being mixed intothe semiconductor element.

Note that when the surface is oxidized by plasma treatment, the plasmatreatment is performed in an oxygen atmosphere (e.g., in an atmosphereof oxygen (O₂) and a rare gas (containing at least one of He, Ne, Ar,Kr, and Xe), in an atmosphere of oxygen, hydrogen (H₂), and a rare gas,or in an atmosphere of dinitrogen monoxide and a rare gas). On the otherhand, when the surface is nitrided by plasma treatment, the plasmatreatment is performed in a nitrogen atmosphere (e.g., in an atmosphereof nitrogen (N₂) and a rare gas (containing at least one of He, Ne, Ar,Kr, and Xe), in an atmosphere of nitrogen, hydrogen, and a rare gas, orin an atmosphere of NH₃ and a rare gas). As a rare gas, Ar may be used,for example. Further, a gas in which Ar and Kr are mixed may be used aswell. Therefore, the plasma-treated insulating film contains a rare gas(containing at least one of He, Ne, Ar, Kr, and Xe) used for plasmatreatment. For example, the plasma-treated insulating film contains Arwhen Ar is used.

It is preferable that plasma treatment be performed in the atmospherecontaining the aforementioned gas, with conditions of an electrondensity ranging from 1×10¹¹ to 1×10¹³ cm⁻³ and a plasma electrontemperature ranging from 0.5 to 1.5 eV. Since the plasma electrondensity is high and the electron temperature in the vicinity of anobject to be treated is low, damage by plasma to the object to betreated can be prevented. Further, since the plasma electron density isas high as 1×10¹¹ cm⁻³ or more, an oxide film or a nitride film formedby oxidizing or nitriding the object to be treated by plasma treatmentis superior in its uniformity of thickness and the like as well as beingdense, as compared with a film formed by a CVD method, a sputteringmethod, or the like. Further, since the plasma electron temperature isas low as 1 eV or less, oxidation or nitridation can be performed at alower temperature as compared with a conventional plasma treatment orthermal oxidation. For example, oxidation or nitridation can beperformed sufficiently even when plasma treatment is performed at atemperature lower than a strain point of a glass substrate by 100degrees or more. Note that as frequency for generating plasma, highfrequency waves such as microwaves (2.45 GHz) can be used. Note thathereinafter, the plasma treatment is performed using the aforementionedconditions unless otherwise specified.

Note that FIG. 85B shows the case where the plasma-treated insulatingfilm is formed by plasma treatment to the surface of the substrate 8511;however, the invention includes the case where a plasma-treatedinsulating film is not formed on the surface of the substrate 8511.

Note that a plasma-treated insulating film formed by plasma treatment tothe surface of the object to be treated is not shown in FIGS. 85C to85G; however, the invention includes the case where a plasma-treatedinsulating film formed by plasma treatment exists on the surface of thesubstrate 8511, the insulating film 8512, the semiconductor film 8513,the semiconductor film 8514, the semiconductor film 8515, the insulatingfilm 8516, the insulating film 8518, or the insulating film 8519.

Next, the insulating film 8512 is formed over the substrate 8511 by aknown method (such as a sputtering method, an LPCVD method, or a plasmaCVD method) (FIG. 85C). As the insulating film 8512, a silicon oxidefilm or a silicon oxynitride film can be used.

Here, a plasma-treated insulating film may be formed on the surface ofthe insulating film 8512 by oxidizing or nitriding the surface of theinsulating film 8512 by plasma treatment. By oxidizing the surface ofthe insulating film 8512, the surface of the insulating film 8512 ismodified, and the dense film with fewer defects such as a pinhole can beobtained. Further, by oxidizing the surface of the insulating film 8512,the plasma-treated insulating film containing a little amount of N atomscan be formed; thus, interface characteristics between theplasma-treated insulating film and a semiconductor film is improved whenthe semiconductor film is provided over the plasma-treated insulatingfilm. The plasma-treated insulating film contains a rare gas (containingat least one of He, Ne, Ar, Kr, and Xe) used for plasma treatment. Notethat the plasma treatment can be similarly performed under theaforementioned conditions.

Next, the island-shaped semiconductor films 8513 and 8514 are formedover the insulating film 8512 (FIG. 85D). The island-shapedsemiconductor films 8513 and 8514 can be formed in such a manner that anamorphous semiconductor film is formed over the insulating film 8512 byusing a material containing silicon (Si) as its main component (e.g.,Si_(x)Ge_(1-x)) or the like by a known method (such as a sputteringmethod, an LPCVD method, or a plasma CVD method), the amorphoussemiconductor film is crystallized, and the semiconductor film isselectively etched. Note that crystallization of the amorphoussemiconductor film can be performed by a known crystallization methodsuch as a laser crystallization method, a thermal crystallization methodusing RTA or an annealing furnace, a thermal crystallization methodusing a metal element which promotes crystallization, or a method inwhich these methods are combined. Here, end portions of theisland-shaped semiconductor films are provided to have an angle of about90 degrees (θ=85 to 100 degrees). Alternatively, the semiconductor film8514 to be a low concentration drain region may be formed by dopingimpurities with use of a mask.

Here, a plasma-treated insulating film may be formed on the surfaces ofthe semiconductor films 8513 and 8514 by oxidizing or nitriding thesurfaces of the semiconductor films 8513 and 8514 by plasma treatment.For example, when Si is used as the semiconductor films 8513 and 8514,silicon oxide or silicon nitride is formed as the plasma-treatedinsulating film. Further, after the semiconductor films 8513 and 8514are oxidized by plasma treatment, the semiconductor films 8513 and 8514may be nitrided by performing plasma treatment again. In this case,silicon oxide is formed in contact with the semiconductor films 8513 and8514, and silicon nitride oxide is formed on the surface of the siliconoxide. When the semiconductor film is oxidized by plasma treatment, theplasma treatment is performed in an oxygen atmosphere (e.g., in anatmosphere of oxygen (O₂) and a rare gas (containing at least one of He,Ne, Ar, Kr, and Xe), in an atmosphere of oxygen, hydrogen (H₂), and arare gas, or in an atmosphere of dinitrogen monoxide and a rare gas). Onthe other hand, when the semiconductor film is nitrided by plasmatreatment, the plasma treatment is performed in a nitrogen atmosphere(e.g., in an atmosphere of nitrogen (N₂) and a rare gas (containing atleast one of He, Ne, Ar, Kr, and Xe), in an atmosphere of nitrogen,hydrogen, and a rare gas, or in an atmosphere of NH₃ and a rare gas). Asa rare gas, Ar may be used, for example. Further, a gas in which Ar andKr are mixed may be used as well. Therefore, the plasma-treatedinsulating film contains a rare gas (containing at least one of He, Ne,Ar, Kr, and Xe) used for plasma treatment. For example, theplasma-treated insulating film contains Ar when Ar is used.

Next, the insulating film 8516 is formed (FIG. 85E). The insulating film8516 can have a single-layer structure or a stacked-layer structure ofan insulating film containing oxygen or nitrogen, such as silicon oxide,silicon nitride, silicon oxynitride, or silicon nitride oxide, by aknown method (such as a sputtering method, an LPCVD method, or a plasmaCVD method). Note that when the plasma-treated insulating film is formedon the surfaces of the semiconductor films 8513 and 8514 by plasmatreatment to the surfaces of the semiconductor films 8513 and 8514, theplasma-treated insulating film can be used as the insulating film 8516.

Here, the surface of the insulating film 8516 may be oxidized ornitrided by plasma treatment, so that a plasma-treated insulating filmis formed on the surface of the insulating film 8516. Note that theplasma-treated insulating film contains a rare gas (containing at leastone of He, Ne, Ar, Kr, and Xe) used for plasma treatment. Note that theplasma treatment can be similarly performed under the aforementionedconditions.

Alternatively, after the insulating film 8516 is oxidized by plasmatreatment once in an oxygen atmosphere, the insulating film 8516 maynitrided by performing plasma treatment again in a nitrogen atmosphere.By oxidizing or nitriding the surface of the insulating film 8516 byplasma treatment in such a manner, the surface of the insulating film8516 is modified, and the dense film can be formed. The insulating filmobtained by plasma treatment is denser and has fewer defects such as apinhole, as compared with an insulating film formed by a CVD method, asputtering method, or the like; thus, characteristics of the thin filmtransistor can be improved.

Next, the gate electrode 8517 is formed (FIG. 85F). The gate electrode8517 can be formed by a known method (such as a sputtering method, anLPCVD method, or a plasma CVD method).

In the TFT 8501, the semiconductor films 8515 used as the source regionand the drain region can be formed by doping impurities after the gateelectrode 8517 is formed.

In the TFT 8502, the semiconductor films 8514 used as the LDD regionsand the semiconductor films 8515 used as the source region and the drainregion can be formed by doping impurities after the gate electrode 8517is formed.

In the TFT 8503, the semiconductor films 8514 used as the LDD regionsand the semiconductor films 8515 used as the source region and the drainregion can be formed by doping impurities after the gate electrode 8517is formed.

In the TFT 8504, the semiconductor films 8514 used as the LDD regionsand the semiconductor films 8515 used as the source region and the drainregion can be formed by doping impurities after the sidewall 8521 isformed on the side surface of the gate electrode 8517. Note that siliconoxide or silicon nitride can be used for the sidewall 8521. As a methodof forming the sidewall 8521 on the side surface of the gate electrode8517, a method where a silicon oxide film or a silicon nitride film isformed by a known method after the gate electrode 8517 is formed, andthen, the silicon oxide film or the silicon nitride film is etched byanisotropic etching can be used, for example. Thus, the silicon oxidefilm or the silicon nitride film remains only on the side surface of thegate electrode 8517, so that the sidewall 8521 can be formed on the sidesurface of the gate electrode 8517.

In the TFT 8505, the semiconductor films 8514 used as the LDD (Loff)regions and the semiconductor films 8515 used as the source region andthe drain region can be formed by doping impurities after a mask 8522 isformed to cover the gate electrode 8517.

In the TFT 8506, the semiconductor films 8514 used as the LDD (Lov)regions and the semiconductor films 8515 used as the source region andthe drain region can be formed by doping impurities after the gateelectrode 8517 is formed.

Next, the insulating film 8518 is formed (FIG. 85G). The insulating film8518 can have a single-layer structure or a stacked-layer structure ofan insulating film containing oxygen or nitrogen, such as silicon oxide,silicon nitride, silicon oxynitride, or silicon nitride oxide; or a filmcontaining carbon, such as a DLC (Diamond-Like Carbon), by a knownmethod (such as a sputtering method or a plasma CVD method).

Here, the surface of the insulating film 8518 may be oxidized ornitrided by plasma treatment, so that a plasma-treated insulating filmis formed on the surface of the insulating film 8518. Note that theplasma-treated insulating film contains a rare gas (containing at leastone of He, Ne, Ar, Kr, and Xe) used for plasma treatment. Note that theplasma treatment can be similarly performed under the aforementionedconditions.

Next, the insulating film 8519 is formed. The insulating film 8519 canhave a single-layer structure or a stacked-layer structure of an organicmaterial such as epoxy, polyimide, polyamide, polyvinyl phenol,benzocyclobutene, or acrylic; or a siloxane resin, in addition to aninsulating film containing oxygen or nitrogen, such as silicon oxide,silicon nitride, silicon oxynitride, or silicon nitride oxide; or a filmcontaining carbon, such as a DLC (Diamond-Like Carbon), by known method(such as a sputtering method or a plasma CVD method). Note that asiloxane resin corresponds to a resin having Si—O—Si bonds. Siloxaneincludes a skeleton structure of a bond of silicon (Si) and oxygen (O).As a substituent, an organic group containing at least hydrogen (such asan alkyl group or aromatic hydrocarbon) is used. Alternatively, a fluorogroup, or a fluoro group and an organic group containing at leasthydrogen can be used as a substituent. Further, the plasma-treatedinsulating film contains a rare gas (containing at least one of He, Ne,Ar, Kr, and Xe) used for plasma treatment. For example, theplasma-treated insulating film contains Ar when Ar is used.

When an organic material such as polyimide, polyamide, polyvinyl phenol,benzocyclobutene, or acrylic, or a siloxane resin is used for theinsulating film 8519, the surface of the insulating film 8519 can bemodified by oxidizing or nitriding the surface by plasma treatment.Modification of the surface improves intensity of the insulating film8519, and physical damage such as a crack generated when an opening isformed, for example, or film reduction in etching can be reduced.Further, when the conductive film 8523 is formed over the insulatingfilm 8519, modification of the surface of the insulating film 8519improves adhesion to the conductive film. For example, when a siloxaneresin is used for the insulating film 8519 and nitrided by plasmatreatment, a plasma-treated insulating film containing nitrogen or arare gas is formed by nitriding a surface of the siloxane resin, andphysical intensity is improved.

Next, a contact hole is formed in the insulating films 8519, 8518, and8516 in order to form the conductive film 8523 electrically connected tothe semiconductor film 8515. Note that the contact hole may have atapered shape. Thus, coverage with the conductive film 8523 can beimproved.

Note that the method of forming the semiconductor device shown in thisembodiment mode can be applied to the method of forming the displaydevice shown in other embodiment modes in this specification. Further,the method of forming the semiconductor device shown in this embodimentmode can be implemented in free combination with each other.

Embodiment Mode 16

In this embodiment mode, a halftone method is described as a process offorming a semiconductor device such as a transistor.

FIG. 104 is a cross-sectional view showing a semiconductor deviceincluding a transistor, a capacitor, and a resistor. FIG. 104 showsN-channel transistors 10401 and 10402, a capacitor 10404, a resistor10405, and a P-channel transistor 10403. Each transistor includes asemiconductor layer 10505, an insulating film 10508, and a gateelectrode 10509. The gate electrode 10509 has a stacked-layer structureof a first conductive layer 10503 and a second conductive layer 10502.FIGS. 105A to 105E are top plan views corresponding to the transistor,the capacitor, and the resistor in FIG. 104, which can be used asreference.

In FIG. 104, in the channel length direction (a direction in whichcarriers flow) of the N-channel transistor 10401, impurity regions 10507(also called lightly doped drain (LDD)) are formed on opposite sides ofthe gate electrode and in the semiconductor layer 10505, which are dopedwith impurities at a lower concentration than impurity regions 10506which form a source region and a drain region electrically connected towirings 10504. When the N-channel transistor 10401 is formed, phosphorusor the like is added to the impurity regions 10506 and 10507 asimpurities which impart n-type conductivity. The LDD is formed in orderto suppress hot-electron degradation and a short-channel effect.

As shown in FIG. 105A, in the gate electrode 10509 of the N-channeltransistor 10401, the first conductive layer 10503 is formed to extendbeyond each side of the second conductive layer 10502. In this case, thefirst conductive layer 10503 is formed to be thinner than the secondconductive layer 10502. The first conductive layer 10503 is formed tohave a thickness enough for ion species which are accelerated with anelectric field of 10 to 100 kV to pass through. The impurity regions10507 are formed to overlap with the first conductive layer 10503 of thegate electrode 10509. That is, LDD regions which overlap with the gateelectrode 10509 are formed. In this structure, in the gate electrode10509, the impurity regions 10507 are formed in a self-aligned manner byadding impurities having one conductivity type (to the semiconductorlayer 10505) through the first conductive layer 10503, using the secondconductive layer 10502 as a mask. That is, the LDDs which overlap withthe gate electrode are formed in a self-aligned manner.

In FIG. 104, in the N-channel transistor 10402, the impurity region10507, which is doped with impurities at a lower concentration than theimpurity regions 10506, is formed on one side of the gate electrode andin the semiconductor layer 10505. As shown in FIG. 105B, in the gateelectrode 10509 of the N-channel transistor 10402, the first conductivelayer 10503 is formed to extend beyond one side of the second conductivelayer 10502. In this case also, an LDD can be formed in a self-alignedmanner by adding impurities having one conductivity type (to thesemiconductor layer 10505) through the first conductive layer 10503,using the second conductive layer 10502 as a mask.

A transistor having an LDD on one side may be used as a transistor inwhich only a positive voltage or a negative voltage is applied between asource terminal and a drain terminal. Specifically, such a transistormay be used as a transistor forming a logic gate, for example, aninverter circuit, a NAND circuit, a NOR circuit, or a latch circuit; ora transistor forming an analog circuit, for example, a sense amplifier,a constant voltage generation circuit, or a VCO.

In FIG. 104, the capacitor 10404 is formed, in which the insulatinglayer 10508 is interposed between the first conductive layer 10503 andthe semiconductor layer 10505. The semiconductor layer 10505 for formingthe capacitor 10404 includes impurity regions 10510 and 10511. Theimpurity region 10511 is formed in a position of the semiconductor layer10505, which overlaps with the first conductive layer 10503. Theimpurity region 10510 is electrically connected to the wiring 10504.Since impurities having one conductivity type can be added to theimpurity region 10511 through the first conductive layer 10503, theconcentration of impurities contained in the impurity regions 10510 and10511 can be controlled to be either the same or different. In eithercase, since the semiconductor layer 10505 in the capacitor 10404functions as an electrode, the resistance of the semiconductor layer10505 is preferably lowered by adding impurities having one conductivitytype thereto. Further, the first conductive layer 10503 can fullyfunction as an electrode by utilizing the second conductive layer 10502as an auxiliary electrode as shown in FIG. 105C. In this manner, byforming a composite electrode structure where the first conductive layer10503 and the second conductive layer 10502 are combined, the capacitor10404 can be formed in a self-aligned manner.

In FIG. 104, the resistor 10405 is formed of the first conductive layer10503. The first conductive layer 10503 is formed having a thickness of30 to 150 nm; therefore, the resistor can be formed by setting the widthor the length of the first conductive layer 10503 as appropriate.

The resistor may include a semiconductor layer containing impurityelements at a high concentration or a thin metal layer. A metal layer ispreferable since the resistance value thereof is determined by thethickness and quality of the film, and thus has small variations,whereas the resistance value of a semiconductor layer is determined bythe thickness and quality of the film, the concentration and activationrate of impurities, and the like. FIG. 105D is a top plan view of theresistor 10405.

In FIG. 104, the semiconductor layer 10505 in the P-channel transistor10403 is provided with impurity regions 10512. This impurity regions10512 form a source region and a drain region forming a contact with thewiring 10504. The gate electrode 10509 has a structure where the firstconductive layer 10503 and the second conductive layer 10502 overlapwith each other. The P-channel transistor 10403 is a transistor having asingle-drain structure where no LDD is provided. When the P-channeltransistor 10403 is formed, boron or the like as impurities which impartp-type conductivity is added to the impurity regions 10512. On the otherhand, an N-channel transistor having a single-drain structure can alsobe formed if phosphorus is added to the impurity regions 10512. FIG.105E is a top plan view of the P-channel transistor 10403.

One or both of the semiconductor layer 10505 and the insulating layer10508 may be oxidized or nitrided by high-density plasma treatment inwhich plasma is excited by microwaves, with an electron temperature of 2eV or less, an ion energy of 5 eV or less, and an electron density inthe range of approximately 10¹¹ to 10¹³/cm³. At this time, by treatingthe layer in an oxygen atmosphere (e.g., O₂ or N₂O) or a nitrogenatmosphere (e.g., N₂ or NH₃) with the substrate temperature being set at300 to 450° C., a defect level of an interface between the semiconductorlayer 10505 and the insulating layer 10508 can be lowered. Theinsulating layer 10508 can be densified by this treatment. That is,generation of charge defects can be suppressed, and fluctuation of athreshold voltage of the transistor can be suppressed. In addition, inthe case of driving the transistor with a voltage of 3 V or less, alayer oxidized or nitrided by the plasma treatment can be used as theinsulating layer 10508. In the case of driving the transistor with avoltage of 3 V or more, the insulating layer 10508 can be formed bycombining an insulating layer formed on the surface of the semiconductorlayer 10505 by the plasma treatment with an insulating layer depositedby a CVD method (a plasma CVD method or a thermal CVD method).Similarly, such an insulating layer can also be utilized as a dielectriclayer of the capacitor 10404. In this case, the insulating layer formedby the plasma treatment is a dense film with a thickness of 1 to 10 nm;thus, a capacitor with high charge capacity can be formed.

As described with reference to FIGS. 104 and 105A to 105E, elementshaving various structures can be formed of a combination of conductivelayers with different thicknesses. A region where only the firstconductive layer is formed and a region where both the first conductivelayer and the second conductive layer are formed can be formed using aphotomask or a reticle having a diffraction grating pattern or anauxiliary pattern which is formed of a semi-transmissive film and has afunction to reduce the light intensity. That is, in a photolithographystep, the thickness of a resist mask to be developed is varied bycontrolling the amount of light transmitting through the photomask whena photoresist is exposed to light. In this case, a resist with theaforementioned complex shape may be formed by providing the photomask orthe reticle with slits having a resolution limit or less. Further, themask pattern formed of a photoresist material may be transformed bybaking at approximately 200° C. after development.

By using a photomask or a reticle having a diffraction grating patternor an auxiliary pattern which is formed of a semi-transmissive film andhas a function to reduce the light intensity, the region where only thefirst conductive layer is formed and the region where the firstconductive layer and the second conductive layer are stacked can becontinuously formed. As shown in FIG. 105A, the region where only thefirst conductive layer is formed can be selectively formed over thesemiconductor layer. Such a region is effective over the semiconductorlayer, whereas it is not needed in other regions (wiring regionsconnected to a gate electrode). With such a photomask or reticle, theregion where only the first conductive layer is formed is notnecessarily formed in a wiring portion; therefore, the density of thewiring can be substantially increased.

In FIGS. 104 and 105A to 105E, the first conductive layer is formedhaving a thickness of 30 to 50 nm, using a refractory metal such astungsten (W), chromium (Cr), tantalum (Ta), tantalum nitride, ormolybdenum (Mo), or an alloy or a compound containing such a metal asits main component. The second conductive layer is formed having athickness of 300 to 600 nm, using a refractory metal such as tungsten(W), chromium (Cr), tantalum (Ta), tantalum nitride, or molybdenum (Mo),or an alloy or a compound containing such a metal as its main component.For example, the first conductive layer and the second conductive layerare formed using different conductive materials, so that the etchingrate of each conductive layer can be varied in an etching step to beperformed later. For example, a tantalum nitride film can be used forthe first conductive layer and a tungsten film can be used for thesecond conductive layer.

This embodiment mode shows that a transistor, a capacitor, and aresistor each having a different electrode structure can be separatelyformed through the same patterning step, using a photomask or a reticlehaving a diffraction grating pattern or an auxiliary pattern which isformed of a semi-transmissive film and has a function to reduce thelight intensity. Thus, elements with different modes can be formed andintegrated in accordance with characteristics of a circuit, withoutincreasing the number of manufacturing steps.

Note that the method of forming the semiconductor device shown in thisembodiment mode can be applied to the method of forming the displaydevice shown in other embodiment modes in this specification. Further,the method of forming the semiconductor device shown in this embodimentmode can be implemented in free combination with each other.

Embodiment Mode 17

In this embodiment mode, another structure which can be applied to thecase where the display device of the invention is provided with alight-emitting element is described with reference to FIGS. 86A to 86Cand 102A to 102C.

Light-emitting elements utilizing electroluminescence are classifiedaccording to whether a light-emitting material is an organic compound oran inorganic compound. In general, the former is referred to as anorganic EL element, and the latter is referred to as an inorganic ELelement.

An inorganic EL element is classified as either a dispersion typeinorganic EL element or a thin-film type inorganic EL element, dependingon its element structure. These elements differ in that the formerincludes an electroluminescent layer in which particles of alight-emitting material are dispersed in a binder, whereas the latterincludes an electroluminescent layer formed of a thin film of alight-emitting material. However, the former and the latter have incommon in that they need electrons accelerated by a high electric field.Mechanisms of obtained light emission are donor-acceptor recombinationlight emission which utilizes a donor level and an acceptor level; andlocalized light emission which utilizes inner-shell electron transitionof a metal ion. In general, donor-acceptor recombination light emissionis employed in dispersion type inorganic EL elements and localized lightemission is employed in thin-film type inorganic EL elements in manycases.

A light-emitting material which can be used in the invention includes abase material and an impurity element to be a luminescence center. Lightemission of various colors can be obtained by changing the impurityelement to be included. The light-emitting material can be formed usingvarious methods, such as a solid phase method or a liquid phase method(coprecipitation method). Further, a liquid phase method such as a spraypyrolysis method, a double decomposition method, a method which employsa pyrolytic reaction of a precursor, a reverse micelle method, a methodin which one or more of these methods are combined with high-temperaturebaking, or a freeze-drying method, or the like can be used.

A solid phase method is a method in which a base material and animpurity element or a compound containing an impurity element areweighed, mixed in a mortar, and heated and baked in an electric furnaceso as to be reacted; thus, the impurity element is included in the basematerial. The baking temperature is preferably 700 to 1500° C. This isbecause a solid-phase reaction does not proceed when the temperature istoo low, and the base material decomposes when the temperature is toohigh. Note that the materials may be baked in powder form; however, theyare preferably baked in pellet form. A solid phase method needs acomparatively high temperature compared with other methods such as aliquid phase method, but is a simple method, and thus has highproductivity and is suitable for mass production.

A liquid phase method (coprecipitation method) is a method in which abase material or a compound containing a base material, and an impurityelement or a compound containing an impurity element are reacted in asolution, dried, and then baked. The particles of the light-emittingmaterial are uniformly distributed, and the reaction can progress evenwhen the particles are small and the baking temperature is lower thanthat of a solid phase method.

As the base material to be used for the light-emitting material,sulfide, oxide, or nitride can be used. As sulfide, zinc sulfide,cadmium sulfide, calcium sulfide, yttrium sulfide, gallium sulfide,strontium sulfide, barium sulfide, or the like can be used, for example.As oxide, zinc oxide, yttrium oxide, or the like can be used, forexample. As nitride, aluminum nitride, gallium nitride, indium nitride,or the like can be used, for example. Alternatively, zinc selenide, zinctelluride, or the like; or a ternary mixed crystal such as calciumgallium sulfide, strontium gallium sulfide, or barium gallium sulfidemay be used.

As a luminescence center for localized light emission, manganese (Mn),copper (Cu), samarium (Sm), terbium (Tb), erbium (Er), thulium (Tm),europium (Eu), cerium (Ce), praseodymium (Pr), or the like can be used.Further, a halogen element such as fluorine (F) or chlorine (Cl) may beadded for charge compensation.

On the other hand, as a luminescence center for donor-acceptorrecombination light emission, a light-emitting material containing afirst impurity element forming a donor level and a second impurityelement forming an acceptor level can be used. As the first impurityelement, fluorine (F), chlorine (Cl), aluminum (Al), or the like can beused, for example. As the second impurity element, copper (Cu), silver(Ag), or the like can be used, for example.

When the light-emitting material for donor-acceptor recombination lightemission is synthesized using a solid phase method, a base material, thefirst impurity element or a compound containing the first impurityelement, and the second impurity element or a compound containing thesecond impurity element are weighed, mixed in a mortar, and heated andbaked in an electric furnace. As the base material, the aforementionedbase materials can be used. As the first impurity element or thecompound containing the first impurity element, fluorine (F), chlorine(Cl), aluminum sulfide, or the like can be used, for example. As thesecond impurity element or the compound containing the second impurityelement, copper (Cu), silver (Ag), copper sulfide, silver sulfide, orthe like can be used, for example. The baking temperature is preferably700 to 1500° C. This is because a solid-phase reaction does not proceedwhen the temperature is too low, and the base material decomposes whenthe temperature is too high. Note that the materials may be baked inpowder form; however, they are preferably baked in pellet form.

Alternatively, as the impurity element in the case where the solid phasereaction is used, a compound formed of the first impurity element andthe second impurity element may be used in combination. In this case,the impurity elements are easily diffused and the solid phase reactionproceeds readily; therefore, a uniform light-emitting material can beobtained. Further, since an unnecessary impurity element is notincluded, a high purity light-emitting material can be obtained. As thecompound formed of the first impurity element and the second impurityelement, copper chloride, silver chloride, or the like can be used, forexample.

Note that the concentration of these impurity elements may be in therange of 0.01 to 10 atomic %, and is preferably in the range of 0.05 to5 atomic % with respect to the base material.

In the case of a thin-film type inorganic EL element, anelectroluminescent layer includes the aforementioned light-emittingmaterial, and can be formed using a vacuum evaporation method such as aresistance heating evaporation method or an electron beam evaporation(EB evaporation) method, a physical vapor deposition (PVD) method suchas a sputtering method, a chemical vapor deposition (CVD) method such asa metal organic CVD method or a low-pressure hydride transport CVDmethod, an atomic layer epitaxy (ALE) method, or the like can be used.

FIGS. 86A to 86C each show an example of a thin-film type inorganic ELelement which can be used as the light-emitting element. In FIGS. 86A to86C, the light-emitting element includes a first electrode layer 8600,an electroluminescent layer 8602, and a second electrode layer 8603.

The light-emitting elements in FIGS. 86B and 86C each have a structurewhere an insulating layer is provided between the electrode layer andthe electroluminescent layer in the light-emitting element in FIG. 86A.The light-emitting element in FIG. 86B includes an insulating layer 8604between the first electrode layer 8600 and the electroluminescent layer8602. The light-emitting element in FIG. 86C includes an insulatinglayer 8604 a between the first electrode layer 8600 and theelectroluminescent layer 8602, and an insulating layer 8604 b betweenthe second electrode layer 8603 and the electroluminescent layer 8602.Thus, the insulating layer may be provided between theelectroluminescent layer and one of the electrode layers interposing theelectroluminescent layer, or may be provided between theelectroluminescent layer and each of the electrode layers interposingthe electroluminescent layer. Further, the insulating layer may be asingle layer or stacked layers including a plurality of layers.

Note that the insulating layer 8604 is provided in contact with thefirst electrode layer 8600 in FIG. 86B; however, the insulating layer8604 may be provided in contact with the second electrode layer 8603 byreversing the positions of the insulating layer and theelectroluminescent layer.

such as aromatic polyamide or polybenzimidazole, or a siloxane resin maybe used. Note that a siloxane resin corresponds to a resin havingSi—O—Si bonds. Siloxane includes a skeleton structure of a bond ofsilicon (Si) and oxygen (O). As a substituent, an organic groupcontaining at least hydrogen (such as an alkyl group or aromatichydrocarbon) is used. Alternatively, a fluoro group, or a fluoro groupand an organic group containing at least hydrogen may be used as asubstituent. Further, a resin material, for example, a vinyl resin suchas polyvinyl alcohol or polyvinylbutyral, a phenol resin, a novolacresin, an acrylic resin, a melamine resin, an urethane resin, an oxazoleresin (e.g., polybenzoxazole), or the like may be used. In addition,fine particles having a high dielectric constant, such as particles ofbarium titanate or strontium titanate, can be adequately mixed withthese resins to adjust the dielectric constant.

The inorganic material included in the binder can be formed usingsilicon oxide, silicon nitride, silicon containing oxygen and nitrogen,aluminum nitride, aluminum containing oxygen and nitrogen, aluminumoxide, titanium oxide, barium titanate, strontium titanate, leadtitanate, potassium niobate, lead niobate, tantalum oxide, bariumtantalate, lithium tantalate, yttrium oxide, zirconium oxide, zincsulfide, or a substance containing an inorganic insulating material.When an inorganic material having a high dielectric constant is includedin the organic material (by addition or the like), the dielectricconstant of the electroluminescent layer formed of the light-emittingmaterial and the binder can be more effectively controlled and can befurther improved.

In a manufacturing process, the light-emitting materials are dispersedin a solution containing the binder. As a solvent for a solutioncontaining the binder which can be used in this embodiment mode, asolvent in which a binder material can be dissolved and which can form asolution having a viscosity suitable for a method (various wetprocesses) of forming the electroluminescent layer with a desiredthickness may be selected as appropriate. An organic solvent or the likecan be used. For example, when a siloxane resin is used as the binder,propylene glycol monomethyl ether, propylene glycol monomethyl etheracetate (also referred to as PGMEA), 3-methoxy-3-methyl-1-butanol (alsoreferred to as MMB), or the like can be used.

The light-emitting elements in FIGS. 102B and 102C each have a structurewhere an insulating layer is provided between the electrode layer andthe electroluminescent layer in the light-emitting element in FIG. 102A.The light-emitting element in FIG. 102B includes an insulating layer10204 between the first electrode layer 10200 and the electroluminescentlayer 10202. The light-emitting element in FIG. 102C includes aninsulating layer 10204 a between the first electrode layer 10200 and theelectroluminescent layer 10202, and an insulating layer 10204 b betweenthe second electrode layer 10203 and the electroluminescent layer 10202.Thus, the insulating layer may be provided between theelectroluminescent layer and one of the electrode layers interposing theelectroluminescent layer, or may be provided between theelectroluminescent layer and each of the electrode layers interposingthe electroluminescent layer. Further, the insulating layer may be asingle layer or stacked layers including a plurality of layers.

Note that the insulating layer 10204 is provided in contact with thefirst electrode layer 10200 in FIG. 102B; however, the insulating layer10204 may be provided in contact with the second electrode layer 10203by reversing the positions of the insulating layer and theelectroluminescent layer.

The insulating layers such as the insulating layer 8604 in FIGS. 86A and86B and the insulating layer 10204 in FIGS. 102A and 102B are notparticularly limited, but preferably have high withstand voltage and aredense films. Further, the insulating layer preferably has highdielectric constant. For example, silicon oxide, yttrium oxide, titaniumoxide, aluminum oxide, hafnium oxide, tantalum oxide, barium titanate,strontium titanate, lead titanate, silicon nitride, zirconium oxide; ora mixed film of those materials or a stacked-layer film including two ormore of those materials can be used. The insulating film can be formedby sputtering, evaporation, CVD, or the like. Alternatively, theinsulating layer may be formed by dispersing particles of theseinsulating materials in a binder. A binder material may be formed usinga material similar to that of a binder contained in anelectroluminescent layer, by using a method similar thereto. Thethickness of the insulating layer is not particularly limited, butpreferably in the range of 10 to 1000 nm.

The light-emitting element in this embodiment mode can emit light when avoltage is applied between the pair of electrode layers interposing theelectroluminescent layer. The light-emitting element can operate with DCdrive or AC drive.

Note that each display device shown in this embodiment mode can beimplemented in free combination with the structure of each displaydevice shown in other embodiment modes in this specification. Further,the structures of the display device shown in this embodiment mode canbe implemented in free combination with each other.

Embodiment Mode 18

FIG. 87 shows a display module combining a display panel 8701 and acircuit board 8702. The circuit board 8702 is provided with a controlcircuit 8703, a signal dividing circuit 8704, and the like, for example.The display panel 8701 and the circuit board 8702 are connected to eachother by a connection wiring 8708.

The display panel 8701 includes a pixel portion 8705 in which each pixelis provided with a display element, a scan line driver circuit 8706, anda signal line driver circuit 8707 which supplies a video signal to aselected pixel. The pixel is similar to that in Embodiment Modes 9 and10. The scan line driver circuit 8706 is similar to that in EmbodimentModes 1 to 8. The signal line driver circuit 8707 is similar to that inEmbodiment Mode 11.

As has been described above, the signal line driver circuit 8707 is notalways needed, and a video signal may be supplied from the circuit board8702 to the selected pixel through the connection wiring 8708. Further,the scan line driver circuit 8706 may be provided on opposite sides ofthe pixel portion 8705.

A liquid crystal television receiver or an EL television receiver can becompleted with this display module. FIG. 88 is a block diagram showing amain structure of a television receiver. A tuner 8801 receives a videosignal and an audio signal. The video signals are processed by a videosignal amplifier circuit 8802; a video signal processing circuit 8803which converts a signal output from the video signal amplifier circuit8802 into a color signal corresponding to each color of red, green andblue; and a control circuit 8804 which converts the video signal intothe input specification of a driver IC. The control circuit 8804 outputsa signal to each of a scan line and a signal line. When performingdigital drive, a structure may be employed in which a signal dividingcircuit 8805 is provided on the signal line side so that an inputdigital signal is divided into m signals to be supplied.

Among the signals received by the tuner 8801, an audio signal istransmitted to an audio signal amplifier circuit 8806, and an outputthereof is supplied to a speaker 8808 through an audio signal processingcircuit 8807. A control circuit 8809 receives control information onreceiving station (receiving frequency) and volume from an input portion8810 and transmits signals to the tuner 8801 and the audio signalprocessing circuit 8807.

As shown in FIG. 89, the display module is incorporated in a housing8901, so that a television receiver can be completed. A display panel8902 is formed using the display module. The television receiver isprovided with a speaker 8903, an operation switch 8904, and the like asappropriate.

Since this television receiver is formed including the display panel8902, the number of components can be reduced. Therefore, the televisionreceiver can be manufactured at low cost.

It is needless to say that the invention is not limited to thetelevision receiver and can be applied to various uses, especially as alarge display medium such as a monitor of a personal computer, aninformation display board at the train station, the airport, or thelike, or an advertisement display board on the street.

Note that the structures of the display panel and the display moduleshown in this embodiment mode can be implemented in free combinationwith the structure of each display device shown in other embodimentmodes in this specification. Further, the structures of the displaypanel and the display module shown in this embodiment mode can beimplemented in free combination with each other.

Embodiment Mode 19

FIG. 90A shows a module combining a display panel 9001 and a printedwiring board 9002. The display panel 9001 includes a pixel portion 9003provided with a plurality of pixels, a first scan line driver circuit9004, a second scan line driver circuit 9005, and a signal line drivercircuit 9006. It is needless to say that a structure of the displaypanel 9001 may be similar to the structure shown in FIGS. 9, 11, 12, and44.

The printed wiring board 9002 is provided with a controller 9007, acentral processing unit (CPU) 9008, a memory 9009, a power supplycircuit 90010, an audio processing circuit 90011, atransmitting/receiving circuit 90012, and the like. The printed wiringboard 9002 and the display panel 9001 are connected through a FPC(Flexible Printed Circuit) 90013. The FPC 90013 may have a structurewhere a capacitor, a buffer circuit, or the like is provided to preventnoise on a power supply voltage or a signal, or dull signal rising.Further, the controller 9007, the audio processing circuit 90011, thememory 9009, the CPU 9008, the power supply circuit 90010, and the likecan be mounted to the display panel 9001 by using a COG (Chip On Glass)method. By using a COG method, the size of the printed wiring board 9002can be reduced.

Various control signals are input and output through an interface (I/F)portion 90014 included in the printed wiring board 9002. An antenna port90015 for transmitting and receiving a signal to/from an antenna isincluded in the printed wiring board 9002.

FIG. 90B is a block diagram of the module shown in FIG. 90A. The moduleincludes a VRAM 90016, a DRAM 90017, a flash memory 90018, and the likeas the memory 9009. The VRAM 90016 stores data on an image displayed ona panel, the DRAM 90017 stores video data or audio data, and the flashmemory 90018 stores various programs.

The power supply circuit 90010 supplies electric power for operating thedisplay panel 9001, the controller 9007, the CPU 9008, the audioprocessing circuit 90011, the memory 9009, and thetransmitting/receiving circuit 90012. Depending on a panelspecification, the power supply circuit 90010 is provided with a currentsource in some cases.

The CPU 9008 includes a control signal generation circuit 90020, adecoder 90021, a register 90022, an arithmetic circuit 90023, a RAM90024, an interface 90019 for the CPU 9008, and the like. Varioussignals input to the CPU 9008 via the interface 90019 are once stored inthe register 90022, and subsequently input to the arithmetic circuit90023, the decoder 90021, or the like. The arithmetic circuit 90023performs operation based on the signal input thereto so as to designatea location to which various instructions are sent. On the other hand,the signal input to the decoder 90021 is decoded and input to thecontrol signal generation circuit 90020. The control signal generationcircuit 90020 generates a signal including various instructions based onthe signal input thereto, and transmits the signal to the designatedlocation by the arithmetic circuit 90023, specifically the location suchas the memory 9009, the transmitting/receiving circuit 90012, the audioprocessing circuit 90011, and the controller 9007.

The memory 9009, the transmitting/receiving circuit 90012, the audioprocessing circuit 90011, and the controller 9007 are operated inaccordance with the instructions received thereby. Hereinafter, theoperation is briefly described.

A signal input from an input means 90025 is sent to the CPU 9008 mountedto the printed wiring board 9002 via the interface portion 90014. Thecontrol signal generation circuit 90020 converts video data stored inthe VRAM 90016 into a predetermined format depending on the signal sentfrom the input means 90025 such as a pointing device or a keyboard, andtransmits the converted data to the controller 9007.

The controller 9007 performs data processing of the signal including thevideo data sent from the CPU 9008 in accordance with the panelspecification and supplies the signal to the display panel 9001.Further, the controller 9007 generates an Hsync signal, a Vsync signal,a clock signal CLK, an alternating voltage (AC Cont), and a switchingsignal L/R based on a power supply voltage from the power supply circuit90010 and various signals input from the CPU 9008 and supplies thesignals to the display panel 9001.

The transmitting/receiving circuit 90012 processes a signal which is tobe received and sent by an antenna 90028 as an electric wave.Specifically, the transmitting/receiving circuit 90012 includes ahigh-frequency circuit such as isolator, a band pass filter, a VCO(Voltage Controlled Oscillator), an LPF (Low Pass Filter), a coupler, ora balun. A signal including audio information among signals transmittedand received in the transmitting/receiving circuit 90012 is sent to theaudio processing circuit 90011 in accordance with an instruction fromthe CPU 9008.

The signal including audio information which is sent in accordance withthe instruction from the CPU 9008 is demodulated into an audio signal bythe audio processing circuit 90011 and sent to a speaker 90027. Further,an audio signal sent from a microphone 90026 is modulated by the audioprocessing circuit 90011 and sent to the transmitting/receiving circuit90012 in accordance with an instruction from the CPU 9008.

The controller 9007, the CPU 9008, the power supply circuit 90010, theaudio processing circuit 90011, and the memory 9009 can be mounted as apackage of this embodiment mode. This embodiment mode can be applied toany circuit other than a high-frequency circuit such as isolator, a bandpass filter, a VCO (Voltage Controlled Oscillator), an LPF (Low PassFilter), a coupler, or a balun.

Note that the structures of the display panel and the display moduleshown in this embodiment mode can be implemented in free combinationwith the structure of each display device shown in other embodimentmodes in this specification. Further, the structures of the displaypanel and the display module shown in this embodiment mode can beimplemented in free combination with each other.

Embodiment Mode 20

FIG. 91 shows one mode of a mobile phone including the module inEmbodiment Mode 19. A display panel 9101 is detachably incorporated in ahousing 91030. The shape and the size of the housing 91030 can bechanged as appropriate in accordance with the size of the display panel9101. The housing 91030 which fixes the display panel 9101 is fitted ina printed circuit board 91031 to be assembled as a module.

The display panel 9101 is connected to the printed circuit board 91031through an FPC 91013. A speaker 91032, a microphone 91033, atransmitting/receiving circuit 91034, and a signal processing circuit91035 including a CPU, a controller, and the like are formed over theprinted circuit board 91031. Such a module, an input means 91036, and abattery 91037 are combined and stored in a housing 91039. A pixelportion of the display panel 9101 is provided to be seen from an openingwindow formed in the housing 91039.

The display panel 9101 includes a pixel portion including a plurality ofpixels and a scan line driver circuit. The mobile phone in FIG. 91 canbe manufactured at low cost by forming the scan line driver circuit overthe same substrate as the pixel portion. Further, the number ofcomponents in the display module can be reduced, so that advantages suchas increase in yield and reduction in weight and size can be obtained.

The mobile phone according to this embodiment mode can be changed invarious modes depending on the function or application thereof. Forexample, when the mobile phone is provided with a plurality of displaypanels or when the housing is divided into a plurality of parts asappropriate and can be opened and closed with a hinge, theaforementioned effect can be obtained.

Note that the structures of the display panel and the display moduleshown in this embodiment mode can be implemented in free combinationwith the structure of each display device shown in other embodimentmodes in this specification. Further, the structures of the displaypanel and the display module shown in this embodiment mode can beimplemented in free combination with each other.

Embodiment Mode 21

This embodiment shows an example where a mobile phone 10300 includingthe display module in Embodiment Mode 19 is completed.

In the mobile phone shown in FIG. 103, a main body (A) 10301 providedwith operation switches 10304, a microphone 10305, and the like isconnected to a main body (B) 10302 provided with a display panel (A)10308, a display panel (B) 10309, a speaker 10306, and the like by usinga hinge 10310 so that the mobile phone can be opened and closed. Thedisplay panel (A) 10308 and the display panel (B) 10309 are placed in ahousing 10303 of the main body (B) 10302 together with a circuit board10307. Pixel portions of the display panel (A) 10308 and the displaypanel (B) 10309 are arranged to be seen from an opening window formed inthe housing 10303.

Specifications of the display panel (A) 10308 and the display panel (B)10309, such as the number of pixels, can be set as appropriate inaccordance with functions of the mobile phone 10300. For example, thedisplay panel (A) 10308 used as a main screen and the display panel (B)10309 used as a sub-screen can be combined.

The display panel (A) 10308 and the display panel (B) 10309 each includea pixel portion including a plurality of pixels and a scan line drivercircuit. The mobile phone in FIG. 103 can be manufactured at low cost byforming the scan line driver circuit over the same substrate as thepixel portion. Further, the number of components in the display modulecan be reduced, so that advantages such as increase in yield andreduction in weight and size can be obtained.

By using such a display panel, the display panel (A) 10308 can functionas a color display screen with high definition, which displayscharacters or images, and the display panel (B) 10309 can function as aninformation display screen of a single color, which displays textinformation. In particular, when the display panel (B) 10309 is anactive matrix type panel so that higher definition is achieved, variouspieces of text information can be displayed; thus, the density ofinformation display per screen can be increased. For example, when thedisplay panel (A) 10308 is a panel with a size of 2 to 2.5 inches, 64gray scales, and QVGA (320 dots by 240 dots) with two-hundred and sixtythousand colors, and the display panel (B) 10309 is a high-definitionpanel with a single color, 2 to 8 gray scales, and 180 to 220 ppi,Chinese characters, Arabic letters, and the like can be displayed aswell as Roman letters, hiragana, and katakana.

The mobile phone according to this embodiment mode can be changed invarious modes depending on functions or applications thereof. Forexample, it may be a camera-equipped mobile phone by incorporating animaging element in the hinge 10310. When the operation switches 10304,the display panel (A) 10308, and the display panel (B) 10309 are placedin one housing, the aforementioned effects can be obtained. Further, asimilar effect can be obtained when the structure of this embodimentmode is applied to an information display terminal equipped with aplurality of display portions.

Note that the structures of the display panel and the display moduleshown in this embodiment mode can be implemented in free combinationwith the structure of each display device shown in other embodimentmodes in this specification. Further, the structures of the displaypanel and the display module shown in this embodiment mode can beimplemented in free combination with each other.

Embodiment Mode 22

The invention can be applied to various electronic devices, specificallyto display portions of electronic devices. Such electronic devicesinclude cameras such as a video camera and a digital camera, agoggle-type display, a navigation system, an audio reproducing device(such as a car audio system and audio components), a computer, a gamemachine, a portable information terminal (such as a mobile computer, amobile phone, a mobile game machine, and an electronic book), an imagereproducing device provided with a recording medium (specifically, adevice for reproducing content of a recording medium such as a digitalversatile disc (DVD) and having a light-emitting device for displayingthe reproduced image), and the like.

FIG. 93A shows a light-emitting device, which includes a housing 93001,a support base 93002, a display portion 93003, speaker portions 93004, avideo input terminal 93005, and the like. The display device of theinvention can be used as the display portion 93003. Note that thelight-emitting device includes various light-emitting devices fordisplaying information, for example, for a personal computer, atelevision broadcast reception, and advertisement. The light-emittingdevice using the display device of the invention as the display portion93003 can reduce slight light emission generated by off current andperform a clear display.

FIG. 93B shows a camera, which includes a main body 93101, a displayportion 93102, an image receiving portion 93103, operation keys 93104,an external connection port 93105, a shutter button 93106, and the like.

The digital camera using the invention as the display portion 93102 canreduce slight light emission generated by off current and perform aclear display.

FIG. 93C shows a computer, which includes a main body 93201, a housing93202, a display portion 93203, a keyboard 93204, an external connectionport 93205, a pointing device 93206, and the like. The computer usingthe invention as the display portion 93203 can reduce slight lightemission generated by off current and perform a clear display.

FIG. 93D shows a mobile computer, which includes a main body 93301, adisplay portion 93302, a switch 93303, operation keys 93304, an infraredport 93305, and the like. The mobile computer using the invention as thedisplay portion 93302 can reduce slight light emission generated by offcurrent and perform a clear display.

FIG. 93E shows a portable image reproducing device having a recordingmedium (specifically, a DVD player), which includes a main body 93401, ahousing 93402, a display portion A 93403, a display portion B 93404, arecording medium (e.g. DVD) reading portion 93405, operation keys 93406,a speaker portion 93407, and the like. The display portion A 93403 canmainly display image information and the display portion B 93404 canmainly display text information. The image reproducing device using theinvention as the display portion A 93403 and the display portion B 93404can reduce slight light emission generated by off current and perform aclear display.

FIG. 93F shows a goggle-type display, which includes a main body 93501,a display portion 93502, and an arm portion 93503. The goggle-typedisplay using the invention as the display portion 93502 can reduceslight light emission generated by off current and perform a cleardisplay.

FIG. 93G shows a video camera, which includes a main body 93601, adisplay portion 93602, a housing 93603, an external connection port93604, a remote controller receiving portion 93605, an image receivingportion 93606, a battery 93607, an audio input portion 93608, operatingkeys 93609, and the like. The video camera using the invention as thedisplay portion 93602 can reduce slight light emission generated by offcurrent and perform a clear display.

FIG. 93H shows a mobile phone, which includes a main body 93701, ahousing 93702, a display portion 93703, an audio input portion 93704, anaudio output portion 93705, operating keys 93706, an external connectionportion 93707, an antenna 93708, and the like. The mobile phone usingthe invention as the display portion 93703 can reduce slight lightemission generated by off current and perform a clear display.

As described above, the invention can be applied to various electronicdevices.

Note that each structure of the electronic device shown in thisembodiment mode can be implemented in free combination with thestructure of each display device shown in other embodiment modes in thisspecification.

Embodiment Mode 23

In this embodiment mode, an application example using a display panel inwhich a pixel structure of the display device of the invention is usedin a display portion is described with reference to drawings ofapplication modes. The display panel in which the pixel structure of thedisplay device of the invention is used in the display portion can alsobe incorporated with a moving object, a constructed object, and thelike.

FIGS. 94A and 94B show a moving object incorporated with a displaydevice as a an example of a display panel which includes the pixelstructure of the display device of the invention in a display portion.As an example of a moving object incorporated with a display device,FIG. 94A shows a display panel 9402 used for a glass portion of a doorin a train car 9401. In the display panel 9402 in FIG. 94A, in which thepixel structure of the display device of the invention is used in adisplay portion, images displayed on the display portion can be easilyswitched by a signal from the outside. Therefore, images on the displaypanel are switched in every time period when types of passengers on thetrain are changed, and more effective advertisement can be realized.

Note that the display panel which includes the pixel structure of thedisplay device of the invention in the display portion is not limited tobe applied to a glass portion of a door in a train car in FIG. 94A, andcan be applied to any place by being changed into various shapes. Anexample thereof is described with reference to FIG. 94B.

FIG. 94B shows the inside of the train car. In FIG. 94B, a display panel9403 provided in a glass window and a display panel 9404 suspended froma ceiling are shown in addition to the display panel 9402 in the glassportion of the door shown in FIG. 94A. The display panel 9403 having thepixel structure of the display device in the invention includes aself-luminous display element; therefore, when an advertisement image isdisplayed during rush hours and not displayed during non-rush hours, aview from a train window can also be seen. Further, in the display panel9404 having the pixel structure of the display device in the invention,when a switching element such as an organic transistor is provided overa film-shaped substrate and the self-luminous display element is driven,the display panel can also perform a display in a bent state.

FIG. 95 shows another application mode as an example of a moving objectincorporated with a display device using a display panel which includesthe pixel structure of the display device of the invention in a displayportion.

FIG. 95 shows a moving object incorporated with a display device as anexample of a display panel which includes the pixel structure of thedisplay device of the invention in a display portion. As an example of amoving object incorporated with a display device, FIG. 95 shows adisplay panel 9502 incorporated into a body 9501 of a car. The displaypanel 9502 in FIG. 95, which includes the pixel structure of the displaydevice of the invention in a display portion, is incorporated into thebody of the car, and has a function of on-demand display of an operationof the car body and data input from inside or outside the car body and afunction to navigate the car to its destination.

Note that a display panel which includes the pixel structure of thedisplay device of the invention in a display portion is not limited tobe applied to a front part of the car body in FIG. 95, and can beapplied to any place such as a glass window or a door by being changedinto various shapes.

FIGS. 96A and 96B show another application mode as an example of amoving object incorporated with a display device using a display panelwhich includes the pixel structure of the display device of theinvention in a display portion.

FIGS. 96A and 96B show a moving object incorporated with a displaydevice as an example of a display panel which includes the pixelstructure of the display device of the invention in a display portion.As an example of a moving object incorporated with a display device,FIG. 96A shows a display panel 9602 attached to a ceiling above apassenger seat of a body 9601 of an airplane. The display panel 9602shown in FIG. 96A, which includes the pixel structure of the displaydevice of the invention in a display portion, is incorporated with thebody 9601 of the airplane using a hinge portion 9603, and the passengerscan view the display panel 9602 by stretching of the hinge portion 9603.The display panel 9602 has functions to display data and to be used asadvertisement or an entertainment means by an operation by thepassengers. In addition, when the hinge portion is bent and put in thebody 9601 of the airplane as shown in FIG. 96B, safety in taking-off andlanding can be assured. Further, when a display element in the displaypanel is lighted in an emergency, the display panel can also be used asan evacuation light in the body 9601 of the airplane.

Note that a display panel which includes the pixel structure of thedisplay device of the invention in a display portion is not limited tobe applied to the ceiling of the body 9601 of the airplane in FIGS. 96Aand 96B, and can be applied to any place such as a seat or a door bybeing changed into various shapes. For example, a display panel isprovided on a back side of a seat and is operated and viewed.

Note that in this embodiment mode, bodies of a train car, a car, and anairplane are shown as a moving object; however, the moving object is notlimited thereto and includes various objects such as a motorcycle, anfour-wheel drive car (including a car, a bus, and the like), a train(including a monorail, a railroad car, and the like), and a vessel. Byemploying the pixel structure of the display device in the invention,reduction in size and power consumption of the display panel can beachieved and a moving object including a display medium which operatesfavorably can be provided. In particular, since display on the displaypanel in a moving object can be easily switched at once by a signal fromthe outside, the display panel is highly useful for an advertisementdisplay board for an unspecified number of customers or an informationdisplay board in an emergency or disaster.

FIG. 97 shows an application mode of a constructed object as an exampleusing a display panel which includes the pixel structure of the displaydevice of the invention in a display portion.

FIG. 97 shows an application example of a display panel in which aswitching element such as an organic transistor is provided over afilm-shaped substrate, and the self-luminous display element is driven,so that the display panel can perform a display in a bent state, as anexample of the display panel which includes the pixel structure of thedisplay device of the invention in a display portion. In FIG. 97, adisplay panel is provided on a curved surface of a column-shaped objectprovided outside, such as a power pole, as a constructed object. Here,as a column-shaped object, a power pole 9701 provided with a displaypanel 9702 is described.

The display panel 9702 shown in FIG. 97 is positioned around the middleof the height of the power pole and is provided at a position higherthan a human viewpoint. Thus, from a moving object 9703, an image on thedisplay panel 9702 can be viewed. When the same images are displayed onthe display panels 9702 provided in outside power poles which standtogether in large numbers, viewers can view information display andadvertisement display. Since it is easy to display the same images fromthe outside on the display panels 9702 provided in the power poles 9701in FIG. 97, highly effective information display and advertisementeffect can be realized. In addition, when self-luminous display elementsare provided as the display elements in the display panel of the displaydevice of the invention, the display panel can be effectively used as ahighly visible display medium even at night.

FIG. 98 shows another application mode of a constructed object, which isdifferent from FIG. 97, as an example using a display panel in which thedisplay device having the pixel structure of the display device of theinvention is used in a display portion.

FIG. 98 shows an application example of a display panel in whichincludes the pixel structure of the display device of the invention in adisplay portion. FIG. 98 shows a display panel 9802 incorporated into aside wall of a prefabricated bath 9801 as an example of a constructedobject incorporated with a display device. The display panel 9802 inFIG. 98, which includes a display portion having the pixel structure ofthe display device of the invention, is incorporated with theprefabricated bath 9801, and a person who takes a bath can view thedisplay panel 9802. The display panel 9802 has functions to display dataand to be used as advertisement or an entertainment means by anoperation by a person who takes a bath.

Note that the display panel which includes the pixel structure of thedisplay device of the invention in a display portion is not limited tobe applied to the side wall of the prefabricated bath 9801 in FIG. 98,and can be applied to any place such as part of a mirror or a bathtub bybeing changed into various shapes.

FIG. 99 shows an example in which a television device having a largedisplay portion is provided inside a constructed object. The televisiondevice in FIG. 99 includes a housing 9910, a display portion 9911, aremote control device 9912 which is an operation portion, a speakerportion 9913, and the like. The display panel which includes the pixelstructure of the display device of the invention in a display portion isapplied to form the display portion 9911. The television device in FIG.99 is incorporated with the constructed object as a wall-hanging typeand can be provided without requiring a large space.

In this embodiment mode, a power pole as a column-shaped body, aprefabricated bath, and the like are shown as examples of as aconstructed object; however, this embodiment mode is not limitedthereto, and any constructed object which can be provided with a displaypanel may be employed. When the pixel structure of the display device ofthe invention is applied, reduction in size and power consumption of thedisplay device can be achieved and a moving object including a displaymedium which operates favorably can be provided.

Note that each structure of the display panel shown in this embodimentmode can be implemented in free combination with the structure of eachdisplay device shown in other embodiment modes in this specification.

This application is based on Japanese Patent Application serial No.2006-236392 filed in Japan Patent Office on Aug. 31, 2006, the entirecontents of which are hereby incorporated by reference.

1. (canceled)
 2. A semiconductor device comprising: first to fifthtransistors; and first to seventh wirings, wherein one of a source and adrain of the first transistor is electrically connected to the firstwiring, wherein the other of the source and the drain of the firsttransistor is electrically connected to the second wiring, wherein oneof a source and a drain of the second transistor is electricallyconnected to the third wiring, wherein the other of the source and thedrain of the second transistor is electrically connected to the secondwiring, wherein a gate of the second transistor is electricallyconnected to the fourth wiring, wherein one of a source and a drain ofthe third transistor is electrically connected to the fifth wiring,wherein the other of the source and the drain of the third transistor iselectrically connected to a gate of the first transistor, wherein a gateof the third transistor is electrically connected to the sixth wiring,wherein one of a source and a drain of the fourth transistor iselectrically connected to the third wiring, wherein the other of thesource and the drain of the fourth transistor is electrically connectedto a gate of the first transistor, wherein a gate of the fourthtransistor is electrically connected to the fourth wiring, wherein oneof a source and a drain of the fifth transistor is electricallyconnected to the third wiring, wherein the other of the source and thedrain of the fifth transistor is electrically connected to the secondwiring, and wherein a gate of the fifth transistor is electricallyconnected to the seventh wiring.
 3. The semiconductor device accordingto claim 2, further comprising a capacitor, wherein one electrode of thecapacitor is electrically connected to the gate of the first transistor,and wherein the other electrode of the capacitor is electricallyconnected to the other of the source and the drain of the firsttransistor.
 4. The semiconductor device according to claim 2, wherein achannel formation region of each of the first to fifth transistorscomprises an oxide semiconductor.
 5. The semiconductor device accordingto claim 4, wherein the oxide semiconductor comprises indium and zinc.6. A display module comprising the semiconductor device according toclaim
 2. 7. An electronic appliance comprising the display moduleaccording to claim
 6. 8. A semiconductor device comprising: first tofifth transistors; and first to seventh wirings, wherein one of a sourceand a drain of the first transistor is electrically connected to thefirst wiring, wherein the other of the source and the drain of the firsttransistor is electrically connected to the second wiring, wherein oneof a source and a drain of the second transistor is electricallyconnected to the third wiring, wherein the other of the source and thedrain of the second transistor is electrically connected to the secondwiring, wherein a gate of the second transistor is electricallyconnected to the fourth wiring, wherein one of a source and a drain ofthe third transistor is electrically connected to the fifth wiring,wherein the other of the source and the drain of the third transistor iselectrically connected to a gate of the first transistor, wherein a gateof the third transistor is electrically connected to the sixth wiring,wherein one of a source and a drain of the fourth transistor iselectrically connected to the third wiring, wherein the other of thesource and the drain of the fourth transistor is electrically connectedto a gate of the first transistor, wherein a gate of the fourthtransistor is electrically connected to the fourth wiring, wherein oneof a source and a drain of the fifth transistor is electricallyconnected to the third wiring, wherein the other of the source and thedrain of the fifth transistor is electrically connected to the secondwiring, wherein a gate of the fifth transistor is electrically connectedto the seventh wiring, and wherein a channel width of each of the secondtransistor, the third transistor, and the fourth transistor is smallerthan a channel width of the first transistor.
 9. The semiconductordevice according to claim 8, further comprising a capacitor, wherein oneelectrode of the capacitor is electrically connected to the gate of thefirst transistor, and wherein the other electrode of the capacitor iselectrically connected to the other of the source and the drain of thefirst transistor.
 10. The semiconductor device according to claim 8,wherein a channel formation region of each of the first to fifthtransistors comprises an oxide semiconductor.
 11. The semiconductordevice according to claim 10, wherein the oxide semiconductor comprisesindium and zinc.
 12. A display module comprising the semiconductordevice according to claim
 8. 13. An electronic appliance comprising thedisplay module according to claim
 12. 14. A semiconductor devicecomprising: first to fourth transistors; and first to fifth wirings,wherein one of a source and a drain of the first transistor iselectrically connected to the first wiring, wherein the other of thesource and the drain of the first transistor is electrically connectedto the second wiring, wherein one of a source and a drain of the secondtransistor is electrically connected to the third wiring, wherein theother of the source and the drain of the second transistor iselectrically connected to the second wiring, wherein a gate of thesecond transistor is electrically connected to the fourth wiring,wherein one of a source and a drain of the third transistor iselectrically connected to the fifth wiring, wherein the other of thesource and the drain of the third transistor is electrically connectedto a gate of the first transistor, wherein a gate of the thirdtransistor is electrically connected to the fifth wiring, wherein one ofa source and a drain of the fourth transistor is electrically connectedto the third wiring, wherein the other of the source and the drain ofthe fourth transistor is electrically connected to the gate of the firsttransistor, wherein a gate of the fourth transistor is electricallyconnected to the fourth wiring, and wherein a channel width of each ofthe second transistor, the third transistor, and the fourth transistoris smaller than a channel width of the first transistor.
 15. Thesemiconductor device according to claim 14, further comprising acapacitor, wherein one electrode of the capacitor is electricallyconnected to the gate of the first transistor, and wherein the otherelectrode of the capacitor is electrically connected to the other of thesource and the drain of the first transistor.
 16. The semiconductordevice according to claim 14, wherein a channel formation region of eachof the first to fourth transistors comprises an oxide semiconductor. 17.The semiconductor device according to claim 16, wherein the oxidesemiconductor comprises indium and zinc.
 18. A display module comprisingthe semiconductor device according to claim
 14. 19. An electronicappliance comprising the display module according to claim 18.